Cu 1

Cu hi: V s mch dng Diode TUNNEL khuch i dng in v

khuch i in p. Hy tnh h s KI, KU bit in tr ca Diode trn on
c tuyn cng tc l rD = -100, in tr ti trong c hai trng hp l R t =

3.0

75.
Cu 2
Cu hi: Cho mch in nh hnh v: hy cho bit cch to im cng tc l
loi no?
Chng minh rng, nu h s truyn t dng in cc gc ca BJT tha mn
>>1, th dng Ic c xc nh gn ng I c

EC I c 0 .RB
.
RB .RT

RB
RT

EC

Cu 3

3.0

Cu hi: Cho mch in nh hnh v, hy lp cng thc gn ng xc nh

tr khng u vo Zvo v h s khuch i dng in K I (dng in u ra
ly trn in tr RE).
+ EC

3.0
T1,1
Zvo

Cu 4

T2,2

T3,3

RE

Cu hi: Cho mch in nh hnh v, cho c tuyn ca transistor. Hy xc nh

im cng tc trn h c tuyn.
RC=3,2k

RB1=88k

EC=20v

RB2=17,2 k

RE=780

IC
ma
6
125a
100a

75a

50a

2
IB

10

15

25a

20 Uce(V)

3.0

Cu 5
Cu hi: Cho s mch in nh hnh v sau:
Rb1

Ec
Rc

Rb2

Uce
T,

3.0

Bit Transistor c = 0,98, Ico = 10A, Ec = +24V, Rb1 = 1M, Rb2 =

500K, Rc = 5K.
Hy tnh gi tr in p Uce v dng in cc gp Ic trong hai trng
hp ng vi kho K ng vo hai v tr khc nhau.
Cu 6
Cu hi: Cho mch in trong transistor mc theo s cc pht chung
+EC=20v

cc tham s ti im cng tc : H11E=2,1 (k), H21E=75, H22E=10-6 (-1), RB

R

C
=250 k , RT = Rc = 5k. Hy
tnh: ZVO, ZR, , KI , KU , KP=?

RB

-EC

3.0

Cu 7
Cu hi: Cho s mch in v c tuyn l tng ho ca cc diode nh
hnh v sau:
Ith (mA)
R
+
E
-

D1

rth = 1/tg = Ri

D2

3.0

Uth (V)

Eth

Bit hai diode c cc tham s:

D1: Eth1 = 0,2V; rth1 = 20 ;
D2: Eth2 = 0,6V; rth2 = 16.
Hy tnh dng in chy qua tng diode khi R = 1K v 10K. Bit E =
200V.
Trng hp R = 1K ta c: ID1 = 53,8mA, ID2 = 45mA
Trng hp R = 10K ta c: ID1 = 10mA, ID2 = 0.
Cu 8

1,5
1,5

Cu hi: Cho mch in nh hnh v : Bit rng : R HC=10k, EXC= 5v, E= =

3.0

20v; I0 = 10A; tnh nhit trong phng, cho hng s Bolzmahn K =

1,38.10-23 (J/oK).
Hy
RHC xc nh in p u ra U RA1 v URA2 bit rng 3 Diode c
tham s ging ht nhau.

EXC
URA1
E=

URA2

Cu 9
Cu hi: Cho mch in nh hnh v: Hy xc nh dng in chy qua tng
Diode. Bit rng: Khi dng kiu mu mt chiu tuyn tnh ha c tuyn
ca cc Diode th ta c:
D1 c cc tham s :Rth1= 10, Eth1=0,2v
D2 c cc tham s : Rth2=15, Eth2=0,3v
D3 c cc tham s : Rth3=20 , Eth3= 0,5v
E0=70v, RHC= 5k
3.0
RHC

E0

D1

D2

D3

Rc

Cu 10

Rc

+Ec u ra , bit cc gi
Cu hi: Cho mch in nh hnh v, cho h c tuyn
tr sau: EC=30V, RC=600, RB=30k, dng in xoay chiu u vo:
IB= 200 sin t ( A ), hy xc nh cng sut u ra ca mch.
Ib
IC ma

IB=900
IB=800

50

IB=70
0
IB=60
0
IB=500

40

3.0

30
IB=300

20
10

IB=100a
0

10

15

20

25

30

UC V

Cu 11
Cu hi: Cho mch in nh hnh v. Hy xc nh in p U CE, URE khi
ng v m kha K. Bit rng EC=20V, RC=2k, RE=500
EB=2V, RB= 10k ; = 0,92; IC0 = 10A.

+ EC
RC

3.0
UCE
RB

kha K

EB
RE

URE
- EC

Cu 12
Cu hi: a) Cho h thng tham s h mch ca mt BJT no , hy tm h
thng tham s ngn mch v tham s hn hp ca BJT .
b) Cho s mc hn hp cc BJT nh hnh v sau:
T1,1

T2,2

3.0

Bit hai BJT c h s truyn t dng tnh cc pht l 1 v 2. Hy chng t

rng s trn tng ng vi mt BJT c h s truyn t dng tnh cc
pht l *(1+2 1.2).
Cu 13
Cu hi: Cho mch in nh hnh v: hy tnh cc gi tr ca cc in tr
sau: RE1, RE2, RB1, RB2. Nu cho : EC= 30v, Ic=3ma, RC=5k; UCE=5v ,=40,
h s khuch i KU=8, dng qua RB2= 9 Ib.

RC

RB1

+ EC
3.0

RE1

RB2

RE2

- EC

Cu 14
Cu hi: Cho mch in nh hnh v. Hy xc nh cch to im cng tc
khi kha K ln lt cc v tr 1, 2, 3. Tnh cc gi tr dng in v in p
ng vi 3 trng hp khi bit: =60; E C = 25v; EB = 2v; RC = 1k; RE =
200; RB1 = 100k; RB2 = 10k; RB3=100k; RB4 =50 k.

RB3

RC

RB1
1

3.0

Kha K

EC

RB4

RB2

RE

EB

Cu 15:
Cho s n p sau:
Rhc

Rt

Bit Rhc = 0,6K; in tr ti Rt = 1,2K. in p n nh l Un = 15V. Hy xc

nh khong bin thin ca in p ngun E bit rng dng in n nh cc i Inmax
= 40mA v dng in n nh cc tiu Inmin = 5mA.