| jitt stamplitied com Jaypee Institute of Information Technology a m Noida I 1 I ' IMPLIFIED —T1 Lxaminaticn-Semester 2 Course Code 10BLLEC211/07B21EC102 Max, Marks : 15 Course Name : Basie Electronics Devices and Cireuits Max, Time: 1 hr All questions are compulsory. Q.1 A sample of Si is doped with phosphorcus to a density of 9.9 x10? /m? as well as with boron to a density of 8 x 10” /m*, Deteriaine the conductivity of Si Sample. Given that = PV @ IRONS mis. ) Q2 Germanium diodes D1 and D2 with knve voltage 0.3V are used in circuit as shown in figure 1. Determine the potential of point X with respect to point Y. (2) Q3 Draw and explain the output waveform for cireuit in figure 2(a) and 2(b). (1.5 Q-4 The input Vi to the circuit in figure 3 is a sinusoidal voltage with peak value 126V. Assuming ideal diodes sketch the output voltage Vout and determine Vdc. @) Q55 Determine the range of input de voltage Vi that will make the diode operate in zener region, in the circuit as shown in figure 4. @) Q.6 (a) State the relative doping level and width of different regions in the transistor. 0) (b) Describe in brief input and output characteristics of Common Base configuration vith 2 ted diagram, LLY JNT Sivecirico re * \av lan ' fa od 37 \oor E Pz, : eLiFe \3v b; ew eal SIMPLIFIED. Y Fig-3 hn IE Mel: sr Re > Vi BOER 22KA ¢ Fig-3 tgimplitied .com