1D Overview MATERIALS SCIENCE OD Vacancies & their Clusters Ao i cemeeeaey ENGINEERING O tnterstitials [FINRODICTORY EOE Oi Defects in Ionic Crytals caer eaad a od OR on > Shottley defect Advanced Reading Point Defects in Materials F Agullo-Lopez, CRA. Catlow, PD. Townsend Academic Press, London (1988) 1 Point defects can be classified as below from two points of view: Oi The behavicur ofa point defect depencs on the slass(as below) to which it belongs Axise inthe crystal for anedtedtontamcey ne, Aesmodyininic ream scare Beek copes elt “Ponwcaz Mt ses) Occupy random positions fave crytal Oceapy e specific sublatceNo sdiitioval foreign, atom involved ‘Vacancies ‘Saf Interatiale ‘Ait defects ‘Atoms of another species ‘awalved aoyskonpornd:a a D a Fronleel defect Other ~ Schotiky defect Innpefoctpoint Be egionain the onl about te in of 1-2 atomic anol Theextent ofthe datorton field nay however entenelto a lager distnce Point defects canbe creed by ‘iemoval’, “elton” er disglecementof ax atone spies (tomy ion) Defect stuctues in ionis cxystls can be mexe compler anu are not ciscusted in de ti inthe elementary intodaction ‘Missingetom fiom an stom: site i called a vaomey ‘Atoms sround the vacancy displaced fom their equlibrium postions. ‘hus gives rise fo estes fell inthe victy of the vacancy. Based on thes origin vacancies can be > RandomSiatistcal (hemal vecancies, which required by hemodynamic equilibrium) or > Strctual (due to off stoizhiome ryina compound). Based on thex postionvacancies canbe acon: or ardered. (dered defects become ‘part of the orytal ciuchie and ae ‘no longer defecs'sn fe uaual ence). ‘Vacancies pley animperfant ole in diffusion of substitutional atoms andin meny other rocesssleffects in materials science including clinb of edge dislecations, sone foms of creep and increased resistiviy Nonequilibrium concentration of vacancies canbe gene > quenching fom higher tempaatue > tombardinent with igh energy particles > plas deformation. > off ebichiomotryinordend compounds Ete