Engg. Series Exam, 2011 DO NOT OPEN THIS TEST BOOKLET UNTH. YOU ARE ASKED TO DO SO \B.C. : P-RSR-L-RGA Test Booklet Series Serial : TEST BOOKLET ELECTRONICS & ‘TELECOMMUNICATION ENGINEERIN Paper I Time Allowed : Two Hours Maximum Marks : 200 INSTRUCTIONS 1 5. 6. a 9. 10. IMMEDIATELY AFTER THE COMMENCEMENT OF THE EXAMINATION, YOU SHOULD CHECK THAT THIS TEST BOOKLET DOES NOT HAVE ANY UNPRINTED OR TORN OR MISSING PAGES OR ITEMS BTC. IF SO, GET IT REPLACED BY A COMPLETE ‘TEST BOOKLET. ENCODE CLEARLY THE TEST BOOKLET SERIES A, B, C, OR D AS THE CASE MAY BE IN THE APPROPRIATE PLACE IN THE ANSWER SHEET. You have to enter your Roll Number on the Test Booklet in the Box provided alongside. DO NOT write anything else on the Test Booklet. ‘This, Test Booklet contains 120 items (questions). Each item comprises four responses (answers). You will select the response which you want to mark on the Answer Sheet. In case you feel that there is more than one correct response, mark the response which you consider the best. In any case, choose ONLY ONE response for each item, You have to mark all your responses ONLY on the separate Answer Sheet: provided. See directions in the Answer Sheet. All items carry equal marks, Before you proceed to mark in the Answer Sheet the response to various items in the Test Booklet, you have to fill in some particulars in the Answer Sheet as per instructions sent to you with your Admission Certificate. After you have completed filling in all your responses on the Answer Sheet and the examination has concluded, you should hand over to the Invigilator only the Answer Sheet. ‘You are permitted to take away with you the Test Booklet. Sheets for rough work are appended in the Test Booklet at the end. Penalty for wrong answers : THERE WILL BE PENALTY FOR WRONG ANSWERS MARKED BY A CANDIDATE IN THE OBJECTIVE TYPE QUESTION PAPERS. (‘There are four alternatives for the answer to every question. For each question for which a wrong answer has been given by the candidate, one-third (0-83) of the marks assigned to that question will be deducted as penalty. (i) Ifa candidate gives more than one answer, it will be treated as a wrong answer even if one of the given answers happens to be correct and there will be same penalty as above to that question, Gi) If a question is left blank, i.e., no answer is given by the candidate, there will be no penalty for that question. DO NOT OPEN THIS TEST BOOKLET UNTIL YOU ARE ASKED TO DO SOFor sinooth and rehuble operation of an !4. amplifier using HUT, it is oecessary that the circuit must be properly designed trom she point of view of biss stabilization, b Riusing i» ased in transition amplifiers to 1. Stabilize the operating temperature variations, point wrainst 2, Place the operating point in the ‘inear region of the characterstics. 1, Reverse sturation current | increases with rh in temperature lew! 2 Vy, decreases with rise in temperature, | Make a, 6 and [,, of the trunsistor Bony, or B changes with chante of independent of temperature variations. temperatare and replacement of the| 4. Reduce distortion und increase dynamic transistor | rane. 4 ob, or B changes with change in ta) \2 Sand 4 collector supply voltage. (b} 1, 2und 4 only 8) 1, Zand 3 only ce) 1, 2 and 3 only ‘b) 1, 2 and 4 only (da) 2, 3 and 4 only se 2, Sund 4 only a) 22, 34nd 4 |s The resistivity of a metal is a function of temperature becouse 2 Lotense magnetic field may be produced ie a fa: The electron density varies with: coil by usirye a temperature a) Nornid metal with a larre number of (b) The electron sax density varer with turns and sending large curtis temperature bi Type | superconductor wit 4 late fe) The lattices vibration increases with umbor of turns and sending a lange temperature ourrent (@) Collision of electrons temperature in ic) Typet! supercunductor with @ large IDEPes Be oumber uf tarns and vending a large ; current t Typecth superconductor with « turge|® AA intrinsic semiconductor has the following mamber of turns but Smiting the current Properties density below a critical value ! 1. Its electron concentration equals its hole concentration 3. The int ovll of w certain type of crystal as | Its carrier density inereases with defined by three vectors a,b and & temperature the vevtors are mutually perpendieulae, but 3. Its conductivity decreases with a6 b+ e The crystal structare ia temperature a Trem wi, 2 and 3 bi Tetrayuns (b} Zand 3 only €: Orthorhombie fe) 1 and 3 only <@> Monoclinic (4) Vand 2 only PASRLAGA (2 AtA ‘hole’ in a semiconductor has 1. Positive charge equal to the electron charge. 2. Positive mass equal to the mass of the electron. 3. An ‘effective mass’ greater than the effective mass of electron. 4. Negative mass and positive charge equal to the charge in nucleus. (a) 1,2,3and4 (b) Land 3 only (©) 2and 4 only (@) Band 4 only 8. A CE amplifier has an unbypassed emitter resistance of 0-5 kQ and a collector load of| 5 kQ. The B of the transistor is 100 and it is operating at 1 mA. The voltage gain of the stage at mid band will be of the order of (a) 200 (b) 100 © (a) 50 9, A common emitter transistor amplifier has a collector load of 10 k®. If its hy, = 100 kQ and hi = 2 KO (h,, ~ hy, ~ 0), the voltage amplification of the amplifier is nearly equal to (a) 500 (b) 200 (100 (@) 60 P-RSR-L-RGA 10. 11. 12. (3-A) ‘The ‘free electrons in a metal follow the kinetic theory of gases and the following statements are made about their properties : 1. The velocity of all the electrons is equal. 2 The — electrons distribution infinity. have a ranging from velocity zero to 3. ‘The average velocity of electron gas is proportional to VT (T = temperature). 4. The maximum velocity of electrons is proportional to Which of these statements are correct ? (a) 1,2, Band 4 (b) Land 3 only (©) 2and 3 only (@) 8 and 4 only Using transistors, 1. Class-A power amplifier has a minimum efficiency of 50%, 2, Class-B push-pull power amplifier gives ise to crossover distortion. 3. Class-AB push-pull power amplifier has higher efficiency than Class-B push-pull amplifier, 4. Class-C power amplifier is generally used with tuned load for RF amplification. (a) 1,2,3and4 (b) 2and 4 only (©) Band 4only (d) 1 and 2 only, A material shows spontancous magnetization, This is due to 1, Weiss molecular field. 2. Cooperative effect among dipoles. 8, Cooperative effect among domains. 4, Absence of applied magnetic field. (a) 1,2,8and4 (b) 2,3 and 4 only (©) 1, 2 and 3 only (@) 1, 2 and 4 only13, Materials in which the pormanent dipoles interact with each other so heavily that they tend to align parallel to each other are called (a) Ferromagnetic (b) Ferrimaynetic te) Paramaynene {d)_ Anti-ferromagnetic 14, A type f superconduetor is 1. A cunductor of infinite conductivity at all temperatures. 2 A conductor with very large conductivity below « critical temperature. 3. A material showing susceptibility «1 below critical temperature. 4 A perfect conductor having conductivity drastically reduced by a critical current a’ 1, Zand 3 only (bi 2, 3 and 4 only © 1, 2and 4 only id) 1.2, Sand4 15, In an RC coupled trunsistor amplifier 1. Low-frequency response is determined by coupling capucitors. 2. High-frequency response ia determined by junction capacitances Mid-frequency response is determined by both coupling and junction capacitances (w Land 2 only (b) Land 3 only (©) 2and 3 only (@) 1, 2and 3 P-RSRL RGA 16. 17. 18, (4 ay Ti fe diffused intu a welt defined region of LINDO, crystal, The following effects are expected : 1. An optical wavesuide is formed im the region containing Ty ‘Ti containing region hes a larger rutractive Index tha im undoped ree Ti containing region has a ‘ower refractive index than in undoped region. (a) 1,2and3 (b) Land 3 only ic) 1 and 2 only (d@) 2 and 3 only Ry by 8D if { t oir i + ; i - 2 it! ‘The inductance Ly and resistance Ry in the above cireuit is used for (a) ow frequency compensation ely (b) High frequency compensation only (c) Both low frequency und high frequency compenvation (d) Increasing mid frequency gain without affecting the cut off frequencies o — LL In the above circuit the optimum low frequency compensation is obtained when (a) CR, = RC, (o) CR, ~ CR, © C, ReIRY (dd Cy (Ry |] Rp19. +Voo Ro Ry {Vout ‘The amplifier circuit shown in the figure is ah example of (a) Voltage series feedback (b) Voltage shunt feedback (© Current series feedback (@) Current shunt feedback 20. The peak output of a tuned amplifier is at 6 MHz and has quality factor of 60. The bandwidth and 3 dB frequencies shall be (a) 100 MHz, 6:05 MHz and 5-95 MHz (b) 6 MHz, 9 MHz and 3 MHz (©) 600 kHz, 66 MHz and 5:4 MH (@) 100 kHz, 605 MHz and 5-95 MHz P-RSR-L-AGA a1. 22, (5-A) On applying an clectric field of intensity 10 V/em across a semiconductor at a certain temperature the average drift velocity of free electrons is measured to be 70 m/s. Then the electron mobility is @) 7x 10% em/Vs 700 em?/vs © Tm Vs @ 700 em/Vs Consider the following statements with regard to semiconductors : 1, In n-type material free electron concentration is nearly equal to density of donor atoms. 2, 1 part in 10% donor type impurity added to Ge improves its conductivity at 30°C by a factor 12 3. Phosphorus is an impurity. 4, Conductivity of Si is more sensitive to temperature than Ge. example of n type Which of these statements are correct ? (a) 1,2 and 3 only (>) 1,3 and 4 only (©) 2and 4 only (d) 1,2,3and4 The diffusion constant for holes in silicon is 13 cm/s, What is the diffusion current if the gradient of the hole concentration oP =~ 2x 10" holes per em? per cm ? (a) -0-416 mA (b) -32% 105A () 832A (a) 0-416 mA24. Givea that at room temperature, the volt /27, A 700 mW maximum power dissipation diode equivuleat of temperature Vip ~ 26 mV, hole { at 25°C has § mW/"C de-rating factor. If the mobiity 14, ~ 500 em?/Vs and the life time of; forward voltage drop remains constant ut holes is 130 ns, in a sample of n-type silicon 0-7 V, the maximum forward current at 65°C: bar that is exposed to radiation at one cad at ia low-injection level, what is the diffusion fa) 700 mA tength of boles ? (b) 714 mA 1A (a) 1300 microns (1 mA (b) 100 Armstrongs os ay {e169 microns (d) 100 microns 10 kQ ' . yd 25, The function (A & B) ws to be reulized using only 2input NAND gates. The minimum number of Z input NAND gutes required for such & realization is 3V fat 3 For the circuit shown ubove, using ideat diode, the vulues of voltage und current are tbh 4 fa) - 3 Vand 06 mA to S (b) 3 Vand 0-0 mA {c) 3 Vand 0-6 mA we 6 id). 3 Vund 00 mA 29. Consider the following statements 1. The radiation falling on a photodiode is primarily a minority carner injector. 2. The short-circuit current of a reverse biased photodiode under illumination varies exponentially with light intensity. 3. ‘The photovoltaic emf of an open-cireuited photodiode varies logarithmically with the light-generated short-circuit current. Consider « sermennductor carrying eurrent and pliced in y transverse magnetic field B, a shown above, The measured potential ‘across 1 and 2 surfaces ie positive at 2 4. The spectral response of « photodiode What ix the type of material ? does not depend upon the frequency of the incident light. Which of these statements are correct ? (bia ype semiconductor material (a) 1,2, 3 and 4 (6) Band 4 only (Land 2 only {d) No such conclusion can be drawn (@ 1and 3 only (a) Intninsie Si material ce) ptype semiconductor material PRSR.L RGA 16 A)Match List I with List TI and select the correct. answer using the code given below the lists : List ist A. At peak 1. Low tunneling point current, B. At valley 2. Zero tunneling point, current C. Reverse bias 3. High diffusion region current, D. Beyond valley 4. High tunneling point current, Code": A BC D @ 3 2 4 21 ) 1 2 4 3 @ 8 4 2 1 @ 1 4 2 38 31. A half-wave rectifier has an input voltage of 240 V rms. If the step-down transformer has a turns ratio of 6 : 1, what is the peak load voltage ? Ignore diode drop. (a) 275V (b) 865V (© °300V (@ 425V 32, Consider the following statements : 1. The efficiency of a light emitting diode (LED) decreases with the injected + current. ‘The efficiency of a LED increases with a decrease in temperature. 3, The light emitted is concentrated near the junction because most of the carriers are within a diffusion length of the junction, 4, Light is emitted in a LED when electrons move from the valence band to the conduction band. Which of these statements are correct ? (a) 1,2, 34nd 4 (b) 1 and 2 only (e) 3 dnd 4 only (@) 2and 3 only P-RSR-LRGA 33, (7-A) The collector and emitter current levels for a transistor with common base de current gain of 0:99 and base current of 20 WA are respectively (a) 2mA and 1:98 mA (b) 1-98 pA and 2 mA (o) 1-98 mA and 2 mA. (d) 2mA and 1:98 yA ‘The difference between PLA and ROM is (a) (by (e) PLA economizes on the number of min-terms to implement Boolean functions PLA has fixed AND array, ROM has fixed OR array PLA is sequential, ROM is combinational PLA is combinational, ROM is sequential (@ Consider the following statements : 1. Ina silicon controlled rectifier (SCR), if the cathode gate is reverse-biased, then the SCR cannot fire at all. 2. ‘The turn-on time of an SCR increases with temperature. 3. After an SCR is turned on, it can. be made to turn off again by reverse + biasing the gate. 4. Gate recovery time is the minimum time that the anode voltage must be maintained below holding voltage V,, to turn off the SCR Which of these statements are correct ? fa) 1,2,3and 4 (b) Land 2 only (o) 2and 4 only (d) 8 and 4 only :36. Which one of the following statements is correct avout SCR ? (@) SCR is constructed using an npn und pnp transistor by connecting base of one transistor to collector of the other transistor. (>) To switch off an SCR, gate current must be reduced below certain threshold value, (©) Higher levels of gate currents in SCR! cause it to conduct at lower! anode-to-cathude voltages. (a) The higher the gute current in SCR, the higher the hotding current to switch off. 37. ‘The p-type epitaxial layer grown over an n-type substrate for fabricating = bipoiar transistor witl funetion as (ai The collector of a p-n-p transistor (b) The base of an n-p-n transistor te) The emitter of « p-n-p transistor (@) The collector contact for a p-m-p transistor 38. The bias:ng of an IC BJT is done by the following biasing scheme : (a) Potential-divider biasing scheme (b} Fixed biusing scheme {© Current mirror biasing scheme {d) Collector to base feedback biasing xcheme P-RSRL-RGA (8 39. AY Consider the following statements about cmos 1 CMOS logic inverter has maximum signal swing of 0 V to Vpp. 2. ‘The output signal swing is independent of exact value of aspect ratio and other device parameters. 3. It is a fast switching device with wide noise margins. 4, It has zero input resistance and infinite output resistance. Which of these statements are correct ? fa) 1,2, 3and4 {b) 1,2 and 4 only (©) 2,8.and 4 only (@) 1,2 and 3 only Match List 1 with List Il and select the correct answer using the code given below ist 1. Bleetrical isolator LeD 2. Forward biased C. Opto couplers 3. Light reflectors / transmitters D. Photodiode 4, Reverse biased Code : A B c D (a) 4 1 3 2 ) 2 1 3 4 @4 3 1 2 @ 2 3 1 441, P-RSR-L-RGA, Given a unity feedback system with Gs) = , the value of K for damping 56+ ratio of 0-75 is @ 1 (bo) 4 © 16 @) 64 System is said to be marginally stable, (2) Gain crossover frequency > Phase crossover frequency (b) Gain crossover frequency = Phase crossover frequency (©) Gain crossover frequency < Phase crossover frequency (@) Gain crossover frequency # Phase crossover frequency System transformation function H(2) for a discrete time LTI system expressed in state variable form with zero initial conditions is (@) e@l-ay*bed (b) e¢at—ay? (ce) (2l- Ayo (@ (a-Ayt 44, 45. (9-A) Unit step response of the system described by difference equation y(n) + yn ~ 1) = x(n) is (a). a (b) Dard © es Which one of the following relations is not correct ? (a) f(t) &(t) = 110) Bt) of momar @ Jf smamer @) ft - 7) = LHe - A family of constant N circles has the centre as (@) X=landy=2N () X=-Fandy=4Nn 1 1 X=-+ and Y= © gmdY= oy @ x=-4 andyB Consider the circuit shown above. The portion of the circuit left to the terminals AB can be replaced by 59 AA L Z B AA 2. z B AA 3 A 1A 4 5a(t 52 Z B (a) Land 2 only (b) . 2 and 3 only (© 1,2 and 3 only @ = 1,2,3 and 4 49. P-RSR-L-RGA (10-A) Laplace transform of the function f{t) shown in the figure is fa) (b) © 2 os @ See z Time constants of R-L and R-C circuits are respectively R-10; L=1H and C=1F (a) 1 sec and 1 see (b) 1 sec and 2 see (©) 2 sec and-3 sec (@) 2 see and 4 see50, Which one of the following gives the V-I characteristic of an ideal voltage source ? (a) (b) | at! LO} ——+ (d) P-RSR-L-RGA 51. 52. (=a) wv The circuit shown in the figure is in steady state before the switch is closed at t = 0. The current ig(0") through the switch is @ 178A » 2/3. @ 1A @ oA Consider the following statements : 1. Voltage across a capacitor cannot change abruptly. 2 Voltage across an , inductor cannot change abruptly. 8. Current through a capacitor cannot change abruptly. 4, Current through an inductor ‘cannot change abruptly. Which of these statements are correct ? (a) 1and:2 only (b) 2 and 3 only © 8 and 4 only (@) Land 4 only53. Match List I with List Il and select the correct anxwer using the code given below tthe lists : List A. Superposition 1. Impedance matching theorem in audio circuits B. Thevenin’s 2. Linear bilateral theorem networks ©. Kirchhof's 3. Large network in voltage and which currents in current laws few elements to be determined D. Maximum 4, Currents and power transfer voltages in all theorem branches ofa network Code : A BC D @ 1 4 8 2 2 4 a ft @ 1 8 4 2 @ 2 8 4 9 54. _. 20 B | roa Ct 423 wv boob Ld ‘The current through the branch AB in the figure shows is fa) 10 A, from A to B tb) 10 A, from B to A 0 (d) 20 A, from B to A PRSR-L-AGA 12 55. 56. A) ava In the circuit shown, the switch is opened at t= 0. The circuit is (a) Critically damped (b) Under-damped {©} Over-damped (@) Undamped 252 250 y Seal 262 1 S10H Voit) qov [p= la ‘ In the circuit shown, the initial current Ip through the inductor is given in the figure The initial value of the voltage ucruss the inductor V,(0*) is (@) 25V (by 50V ( 100V @ oov57. P-RSR-L-RGA wo yA 49 qe Oe, My 5a Por the network shown in the figure, Yj, and Yyp are, respectively fa) (b) © @ wf N A two-port network satisfies the following relations : 41, +81,=2V, 81, +161, =V, 1. The network is reciprocal 2 4, 8 By 4. y= Band Z,,=4 11 = 4 and 24, = 8 = Band Z,, = 16 Which of these relations are correct ? (@) 1,2,3and4 (b) 2 and 3 only (©) Band 4 only (@) Land 2 only 59. (13 -A) 60. qh kv, N 10kQ In the circuit shown, 2-port network N has Zy, = 10° O, Zp = 10.9, Zp, = - 10° 0 and 2g = 10° Q. The current gain B is a (a) -50 (b) +50 © +20 fd) 20 19 I, Vie SW 2 ov, 12 3a In the 2-port network shown in the figure, the value of Yyo is (@ ~ b mho () + mho (© 3mbo (d) +3 mho81. For » network transfer funetion H(e) — (/ 163. where P(s) and Q(s) are polynomials in S, 1 The degree of P(s) and Q(s) sre same. The degree of P(s) is always greater than the degree of Q(s). 3. The degree of P(s) is independent of the degree of Qts’. ' i The maximum degree of P{a) and Qs) differ at most by one, Which of those statements are correct 7 fa) 1,2, 3and4 (b) 1,2 and 3 only fe) 1, 2and 4 only (d) 2, 3 and 4 only t ' 62. 2 g Viist ‘The driving point impedance of the network | shown in figure is a) 10428 BD W42- 2. 10 a ! ' PRSRL-AGA Ps (aay + jo Lo a ee f +6 tio i 2, St tne te ' 450 Boe Re ft 4 re The valid pole-zero putterns for un RL driving point impedance function, are (a) Land 2 only (b) Zand 3 only (©) Band 4 only id) 1, 4,3 and 4P-RSR-L-RGA 64, The Foster I realization of the driving point impedance function Z(s) = So? +006" + 49) 36°49) is shown below. cq. it ‘The values of Ly and Cy are, respectively, (a) 3Hand & p 3 3 b) SHand 2 FP o) nd 1 3 @ pum Zr L 49 (a) 2 H and 3 F Consider the following statements : 1. Poles and interlace. zeros are simple and 2. Residues at the poles on the imaginary axis are real. 3. Bug 0) > Zee 4, The slopes of the reactance curves are positive. Which of these properties are correct’ for an RC driving point impedance Zao (6) ? (a) Land 3 only (b) 2 and 4 only © @ B and 4 only 1,2, 8 and 4 66. 67. (15 -A) Two coils N, and «Ny turns are wound concentrically on a straight cylindrical core of radius r and permeability y, The windings have length l, and J, respectively as shown in figure. The mutual indyetance will be 1, Proportional to N,N,. 2. Proportional to p. 3. Inversely proportional to Z,. 4, Inversely proportional tor”. Which of these statements are correct ? (a) 1, 2,3 and 4 (b) 2,8 and 4 only (©) 1,2 and 8 only (a) 1,3 and 4 only A varying magnetic flux linking a coil is given by @= 3 At. If at time t = 38, the emf induced is 9 V, then the value of 2 is (a) Zero (b) 1 Wh/s® (©) -1 Wh/s? @ 9 wos?68, Ir the potential, V - 4x + 2 wilts, the eleutrie field is tai 6 V/eo bi 2 Vio 4 Vim 4a, Vi 69. If the current element represented vy 450 * ay Ampa ix placed in a magnetic field of H- “0x A/m, the force on the eurreot element is ta) 20 a, mN 204, aN i 20a, N 20 a, N 70. Math List | with List fl and select the correct answer using the code given below the “ists bet bet A MMF 1. Conductivity Magnetic tux 2. blectrie current (. Refuetance 3. EME D. Permeability 4, Resistance Code : A BC D ea 4 2 1 he o1 2 4 8 ob 2 41 dot 4 203 P-RSRL RGA 71. TR. 116. AD Given that the electric Mux density D = zp (eox* ©! a, Chm’. ‘he charge density ut point <2, 2/4, 3) ww 8 ib) 1 ©) 05 id) 06 a, oa ‘Two dielectric media with permittivities 3 and v3 boundary as shown in figure. ‘The electric field intensity in medium ? at point Py has magnitude B, and makes an angle a, + 60° are seprrated by a charge-free with the normal. The direction of the electric field intensity at point P,, a fa) sin * (V8 Ey (b) 45" (a) 30°73, For no reflection condition, a vertically polarized wave should be incident at the interface between two dielectrics having £1 = 4 and €, = 9, with an incident angle of = (9 tan? (2 (@) tan (3) a (8 tan? (2 @) tan’ (5) 1 (2 (© tant (3) © tant (2 a1 (4 a) tan (= @ (3) 74. Assuming that each loop is stationary and time varying magnetic field B, induces current I, which of the configurations in the figure are correct ? Increasing Decreasing B B . 2. * CD 1 Decreasing Increasing B B , ‘ QD T (a). 1,2,3and4 () Lend 8 only (©) 2and 4 only (a) Band 4 only P-RSR-L-RGA 75. 76. 77. (17-a) ‘The electric field component of a wave in free space is given by E = 10 cos (107 t + kZ) ay V/m. Following is a list of possible inferences : 1. Wave propagates along ay 2. Wavelength d= 188-5 m 3. Wave amplitude is 10 V/m 4, Wave number = 0-33 rad/m 5. Wave attenuates as it travels Which of these inferences can be drawn from E? fa) 1,2, 3,4 and 5 (b) 2 and 3 only (©) Band 4 only (@) 4 and 6 only An electromagnetic wave of frequency 3 MHz passes from vacuum into a dielectric medium with permittivity € = 4-0. Then (a) Wavelength is doubled and the frequency remains unchanged (b) Wavelength is doubled and the frequency becomes half (©) Wavelength is halved and the frequency remains unchanged Both the wavelength and frequency remain unchanged (a) A plane wave is generated under water (@ = 81 6, and » = 4,). The wave is parallel polarized.’ At the interface between water and air, the angle a for which there is no * reflection is (a) 83-88° (b) 83-66" (©) 84-86" (@) 84-08"Loading of a cable ix done to 78. The characteristic impedance of TV receiving ‘B81. antenna cable is 300 ©. If the conductors are made of copper separated by air and are Lamm thick, what is the phase velocity and phase constant when receiving VHF channel | (3. (63 MHz) and VHF 69 (803 MHz) ? f i fa) 182 rad/in and 17-82 rad/m ib) 0-52 rad/m and 16:82 rad/m (ce) 1-62 rad/m and 17°82 rad/m ‘d) 1:32 rad/m and 16-82 rad/m 79, If maximum ard minimum voltages on a transmission line are 4 V and 2 V a2, respectively, VSWR is j fa) 05 | - | oF dy 8 \ 80. An ideal losslex« transmission ‘ine of { Zy ~ 60 42 is connected to unknown Z, If SWR = 4. find Z, fa) (by eh id P-RSR-L-RGA 240.0 480 2 120.2 100 cis. AY fa) by ( a) Increase its inductance Increase its leakage resistance Decrease its capacitance Achieve dixtortionless condition 1,2, 3 and 4 Land 2 only Zand 3 only und 4 only Consider the following statements about the Smith chart : L A complete revolution / 360") around the Smith chart represents a distance of hatf wavelength on the tine, Clockwise movement on the chart is regarded as moviny toward — the generator. Although three scultx around the periphery of Smith chart are used, but only one scale can be suffictent Smith chart admittance chart cannot be used as Which of these statements ary correct ? ta (bo Cc) (a 2,3 und 4 1, 2 and 4 only 2,3 and 4 only 1, 2 and 3 onlya3. P-RSR-L-RGA Consider the following statements : 1. The antennas radiate energy. 2. An antenna is a transition device, or transducer between a guided wave and a free space wave or vice versa. 3. The resonators and transmission lines store energy. 4, An antenna converts electromagnetic signal to currents or vice versa. Which of these statements are correct ? (a) ‘1,2 and 4 only (b) 1,2 and 3 only (©) 2, 3.and 4 only @ 1,2, 3and4 An antenna can be modeled as an electric dipole of length 5 m at 3 MHz. Find the the assuming uniform current over the length. reduction resistance of antenna @ 29 (b) 19 ) 49 (@ 050 86. (19-A) Match List I with List I and select the correct answer using the code given below the lists = List I A. Two isotropes half wavelength apart fed in phase B, Two isotropes quarter wavelength apart 90° phase shift C. Two isotropes quarter wavelength apart fed in phase Code : A B Cc (a) 1 3 2 (b) 2 3 1 () 1 2 3 (d) 2 1 3 ‘An antenna located on the surface of a flat earth transmits an average power of 200 kW. Assuming that all the power is radiated uniformly over the surface of a hemisphere with the antenna at the center, the time average Poynting vector at 50 km is (@) Zero @) 2a, wnt ©. 2 a whe? @87, Which one of the following meters has maximum loading effect on the circuit under measurement 7 fa) 10002 / volt (b) 100 2/ volt (c) 1 MQ / volt (2) 10 MQ / volt A second order pressure transducer has a frequency of 30 rad/sec, 10 nV/Pa, When a step pressure input of 8 x 10% N/m* is applied, natural static sensitivity K = damped frequency of 29°85 rad/sec is observed. ‘The damping ratio of the transducer is (#) Zera wb) 0-707 89. A voltmeter with an internal resistance of 200 £2 when connected across an unknown resistance reads 250 V. The milliammeter internal resistance = 0 connected in series with the above combination reads 10 mA. The actual value of the unknown resistance is fa) 25 ke tb) 200 ka fe) 28-56 KO (a) 20KQ PRSR-L-AGA 90. 91. (20 -A) t | i AC Voltage ‘The figure shows the circuit of a rectifier type voltmeter. The diode Dy Dees not allow any current to flow through the meter during negative half cycle. 2. Does not allow reverse leakage current, to flow through the meter during negative half cycle. 3. Short circuits the meter during negative half cycle. Which of these statements are correct ? (a) Land 2 only (b) 2 and 3 only (© 1 and 3 only (@) 1,2and3 A good S/IT circuit should have 1. High input impedance 2. High output impedance s Low input impedance 4. Low output impedance (a) land 2 only (b) 2 and 3 only (©) 8 and 4 only (d) Land 4 only92, When a sinusoidal signal of 220 V, 50-Hz produces on CRO a vertical deflection of 2 em at a particular setting of the vertical gain control, what would be the value of the voltage to be applied to produce a deflection of 3 cm for the same vertical gain ? (a) 330 V ov (c) 220V (d) 55V 93. A 1000 Hz sinusoidal vollage is connected to both X and Y inputs of a CRO. Which of the following waveforms is seen on CRO ? (a) "Sine wave “ @) Circle (c) Ellipse (@ Straight line 94. A dual slope Analog to Digital converter 1. © Responds very fast. 2. Has better accuracy. 3, Requires an accurate and stable de source 4, Requires-a buffer at the input side. (a) Lis not correct (b) 2 and 3 are correct (© Band 4 are correct, (a) 1, 2,3 and 4 are correct 95. A digital voltmeter has ab digit display. ‘The 1 V range can read up to (a) 10000 V ) Lunvy (© 09999 V (a) 19999 V P-RSR-L-RGA 96. 97. (21-A) Consider the following statements for an N-bit DACs 1, R-2R ladder type is based on dual slope integration, 2. R-2R requires resistors of large spread in values. 3, R-BR requires roughly 2N resistors. 4. RR requires roughly N number of resistors. Which of these statements are correct ? (a) 3 only (b) Lonly (©) 1and3 (@) Qand4 A 10 bit A/D converter is used in a DMM. The maximum peak to ripple voltage allowed in the de supply voltage for a measurement range of 0 to 6 V is (a) 100 mv (b) 25 mV (© 5mv @ 50 mv Match List I with List II and select the correct answer using the code given below the List A. Hot wire 1. Gas flow B. LVDT 2, Displacement C. Piezoelectric 3. Current: D. Hall effect 4, Acceleration Code : A B Cc D (a) 21 4 2 3 (b) 3 4 2 1 (ce) 1 2 4 3 qd) 3 2 4 1100. PRSRLRGA Match List J with List II and select the correct answer using the code given below the hs List H A. Chromet 1. Longe tife and tow Abumel! thermal conductivity B Tron 2, Inexpensive und Constantan mechanically strong | C. Plataum 3. Low sensitivity and Rhodium high stability D. Couper 4 Suitable for Constantan, measurement betow OC and anh reiixbility Code : A Bc D wt 2 38 4 4 2 38 1 el 8 4 4 8 21 A platinum resistance thermometer has a rentatence of 140-5 @ at 100°C and 100-0 a at 0-C, When it is in contact with » hot gus, its aa The ix (Assuming platinum — is becomes the gay coefficient of temperitare of temperature O-004/°C close to fay 300°C iby 400° ser 800°C 600" (22 101. 102. 103. A) Optical Pyrometer is generally used to (a Low pressure tb) Low temperstare () High temperature (d) High pressure Match List 1 with List U and select the correct answer using the code given below the lists List L A Ferrite 1 B. Superconductor, Faraday effect C. Quarts 3. Hysteresis D. tron 2. Prezovtectricity Code: A BC D @ 3 1 4 2 by 2 1 4 8 @ 8 4 5 2 @2 4 tos woke vj4omv ara ft ° Wee get | Vp=20mV 4.7 x0 oe ) #12V @ -24V @ +24V104, 105. Doping intrinsic Silicon with Arsenic as an impurity (a) Only increases the conductivity of Silicon by increasing the number of free electrons available (b) Produces a semi-conductor in which the charge carriers are _ predominantly electrons but holes are also present (© Produces a semi-conductor in which the charge carriers are predominantly holes but free electrons also present (@) Produces a semi-conductor in which the charge carriers contain nearly equal number of electrons and holes A dipole with a length of 1:5 m operates at 100 MHz while the other has a length of 15 m and operates at 10 MHz. The dipoles are fed with same current, The power radiated by the two antennas will be (a) The longer antenna will radiate 10 times more power than the shorter one (b) Both antennas radiate same power (© Shorter antenna will radiate 10 times more power than the longer antenna (@) Longer antenna will radiate V10 times more power than the shorter antenna Directions : Each of the next fifteen (15) items consists of two statements, one labelled as the ‘Assertion (A)’ and the other as ‘Reason (Ry’ You are to examine these two statements carefully and select the answers to these items using the codes given below : Codes : . (a) Both A and R are individually true and R is the correct explanation of A (b) Both’A and R are individually true but R is not the correct explanation of A (©) Ais true but Ris false (@) Ais false but R is true P-RSR-L-RGA (23 106. 107. 108. 109. -A) Assertion (A) : Reason (R) + Assertion (A) > Reason (R) : Assertion (A) : Reason (R) : Assertion (A) : Reason (R) ‘The bias stability of a self bias amplifier circuit can be improved by increasing the values of both the base resistor (Ry) and the emitter resistor (Rp). ‘The base resistor (Rp) provides the required voltage to the base terminal and the emitter resistor (Rg) provides negative feedback to the amplifier. ‘Thermal runaway occurs in FET circuits but it does not oceur in BST circuit. FET is a majority carrier device whereas BJT works based on the movement of both the majority and the minority carriers, Good conductors do not show superconductivity. Electron-phonon interaction that leads to formation of Cooper pairs is weak in good conductors. The typical common base output characteristics of. a bipolar junction transistor remains almost parallel to the voltage axis, but shows very little increase in current. with increase in the output voltage. ‘The short circuit common base current gain (a) of a bipolar transistor increases with increase in the temperature.110. Assertion (A) : Reason (R) > 111, Assertion (A): Reason (R) 112. Assertion (A) : Reason (R) 118, Assertion (A) : Reason (R) : 114. Assertion (A): Reason (R) > P-RSR-L-AGA The reverse —_ saturation current approximately doubles for every 10°C temperature rise for both Si and Ge materials. At room temperature, the p-n junction voltage decreases by about 2:5 mV per °C with rise in temperature. ‘The resistance of a FET in non-conducting region is very high. ‘The FET is a-semiconductor device. It is desired that the high frequency transistors should work at low callector currents for better high frequency performance. The diffusion capacitance is Girectly proportional to the emitter current. In a transistor, it is desirable that the carriers contributing to emitter current in the active mode reach the collector terminal. ‘The conductivity of the base in.a transistor is made much smaller than the conductivity of the emitter. Concentration of acceptor atoms in the region between isolation islands will be much higher p* than in the p type substrate in an integrated circuit, This is to prevent the depletion “region © of the reverse-biased isolation to substrate junction from extending into p* type material. (24 115, 116, 7. 118; 119. 120, =A) Assertion (A) : Reason (R) : Assertion (A) : Reason (R) : Assertion (A) : Reason (R) : Assertion (A) : Reason (R) : Assertion (A) : Reason (R) Assertion (A) : Reason (R) The power factor of an inductor is zero. The voltage cross and current through the inductor are in quadrature. When a series RLC circuit is in resonance the current flowing in the circuit i maximum. . The inductive reactance and the capacitive reactance are equal in magnitude at Tesonance. Under static conditions, the surface of conductor is an equipotential surface. ‘The tangential component of electric “field on conductor surface is zero. For time varying field the relation E = - VV is inadequate. Faraday’s law states that for time varying field ¥ x B = 0. ‘The ratio of the tangential components of current density at two sides of an interface are equal = to. —sthe conductivities. ‘The- normal component of current density is continuous. Effect of frequency on calibration is also due to spurious capacitive currents Spurious capacitive current does not oceur— in thermocouple instruments,SPACE FOR ROUGH WORK P-RSR-L-AGA (25-A)SPACE FOR ROUGH WORK P-RSR-L-RGA (26 A)SPACE FOR ROUGH WORK P-RSR-LAGA (27-A)SPACE FOR ROUGH WORK P-RSR-L-RGA (28 A)