FAIRCHILD SEMICONDUCTOR ay peBsvese74 ooe7soy s 3469674 FAIRCHILD SEMICONDUCTOR 84D 27504 Om 2N718A eed 2N1613 NPN Small Signal General Purpose inna hanamamoes TOM et aro he ct eit ae ee, Nee EEE EEEEEEEEEE 2-296FAIRCHILD SENTCONDUCTOR au DE suee74 ooa7siz 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27517 Dw 2N/PN/FTSO2218 2N/PN/FTSO2221 Ty 23 ELECTRICAL CHARACTERISTICS (25°C Amblent Temperature unless otherwise noted) (Nove 6) ‘SYMBOL | CHARACTERISTIC MIN] MAX | ONITS: TEST CONDITIONS Tre [OC Current Gain (Nate 8) 40 | 120 2 3 | a | 20 20 Von To Emitter Sustaining 30 Vv 10 mA (pulsed), le (Note 5) Vere to Emitter Saturation 04 | V_ |le= 180A, = 50ma Voltage (Note 5) se |v 500 mA, Veena | Base 10 Emitter Saturation 13 |v 150°mA, Voltage (Note 5) 26 |v 500 mA, Ge__| Output Capacitance 30 | oF Ths | High Frequency Current Gain 25. aha) | Real Part of Common Emitter oo | a igh Frequency Input Impedance e237[FAIRCHILD SEMICONDUCTOR BY DEB svbI74 goe7sLE S { 3480674 FAIRCHILD SEMICONDUCTOR ean 27518 De Ss siieireeeel 2N/PN/FTSO2218A T3523 oa 2N/PN/FTSO2221A Seemurteae Comper ‘9 Company NPN Small Signal General Purpose Amplifiers & Switches : Veco 1 AO V (Min) @ 10mA PACKAGE 1D fre = 40-120 @ 150.mA 2N2218A 0-80 2 TEL ase (tlax) @ 150 mA, ton... 2888 (Max) @ 150A 2N22214 0-18 Complemonts ..» 2W/PN/FTSO2006A Series PN221eA. —-TO-82 PN2221A 0-82 [ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO22184 —-TO-286AA/AB FT8O22218 —-TO-236AA/AB ‘Temperatures 2N _ PNIFTSO Storage Temperature 65°C 10 200°C -S5°C0 150°C Operating Junction Temperature wee 180°C. Power Dissipation (Notes 2 & 9) “otal Dissipation at zatea 22218 25°C Ambient Temperature (Note 7) ow 06 26°C Case Temperature gow 18W “otal Dislpation at PN FTSO. 25°C Ambie o625w 0350" 25°C Case Tem 10 Voltages & Currents Vero Collector to Emitter Voliage wv {ote 4) Vexo. Collector to Base Voltage ry Vazo_ Emiter to Base Voltage ov 1” Collestor Current 200 mA ELECTRICAL CHARACTERISTICS (26°C Amblent Temperature unless otherwise noted) (Not® 6) ‘SYMBOL | CHARACTERISTIC IMiny_[MAX | UNITS "TEST CONDITIONS BVoro | Collector to Emitter Breakdown Voltage | 40 Vv [ie tOmA, a=0 . (ote 5), Bviso_ | Emittr to Base Breakdown Votage [60 Vea 0, = 10 HA, BVoxo | Collector to Base Breakdown Voltage _| 75 V_ [l= 109A le= 0) {onl beaten 17 oe Diseth tontcate Pera {Soto mney rr att a cots ene ue OM rng er of 339 ma) Tab min oe 47 nti ch to cero haere Wom at of SNe vias icon ener ar oo lessen PNT Fr TOazanand FTSOEEIANSTom-antn Mars ‘ower So Gane RIC, eS— FAIRCHILD SEMICONDUCTOR Bu DEB sues74 ooe7s29 7 A 3469674 FAIRCHILD SEMICONDUCTOR 84D 27519 Dw 2N/PN/FTSO2218A, 2N/PN/FTSO22210 T45. 74 | ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL CHARACTERISTIC MIN [wax [ UNITS TEST CONDITIONS: lees | Collector Reverse Curent 10_[ nA_[Ver=60V, Ven =3.0V ' Teeo | Collector Reverse Current 70 | 9A |v 30_| GA _| Ven = 60V, le=0, Ta= 150°C Emir fo Base Cutol Current 30” [na 30V, lo 0 aso Current 20_| nA [vex =30¥V, Vow DC Current Gain 20 te = 100 uA, Vo 28 LO mA, Vor = 10 (Note 5) 35 10mA, Ver {Note §) 20 | 120 (Note 8) 25 (Note 5) 16 (ote 5) 2 Verner | Collector to Emitter Saturation Volage os |v (Note 5) wo |v Veroar | Base to Emitter Seuration Vokage | 06/12] V (ote 5) zo | _v Gon | Output Capacitance ao | oF = 100 KHz Go| input Capacitance 25_| pF | Vee = OSV, l= 0, = 100 Ki Th | High Frequency Current Gain 25 1g =20 mA, Ves= 50V.1= 100MHE Tie | Small Signal Current Gain 30 | 150 Te= 1.0mA, Veo= 10V, f= 1.0KHE 50_| 300 le YOmA, Vea 10V. t= 4.0 kHz he input Resistance 10 [85 | KA |lo=1.0mA, Vey One a2 | 10 l= 1A, Vox Okie ‘Output Condustance 30 | 15 ‘OK 40 | 100 Okie Tie | Voltage Feedback Ratio 500 10V, f= 10K [| 250 10V,1= 4.0 Ke Fe (ha) | Real Part of Common Emit | [lem 20mA, Vor = 20V High Frequency Input Impedance fe 300 MH ny Turn On Delay Time (wstciroutno.237)| 70_| ne [a= 160m, Ver 1 lee Time (test ciroull no, 291) 25 | ns | leg 150A, Voo= 80¥, w ‘Storage Time (test circuit no, 233) 25 | ne v Fall Tim (test ercut no. 282) | ne ‘Active Ragion Time Constant 25 | 16 Collector to Base Time Constant 150 | 6 9.209FAIRCHILD ENTCONDUCTOR BY DEB R4e9e74 ooe7se0 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27520 D 2N2219/PN2219/FTSO2219 2N2222/PN2222/FTSO2222 NPN Small Signal General Purpose Amplifiers & Switches — FAIRCHILD — ‘Reeniumborger Company T-39-23 1 = Vezo --. 30 ¥ (Min) PACKAGE ! fre --- 100-200 @ 150 mA, 80 (tin) @ 600 mA 2Nozie 10-39 i 2nazze To-18 ! ABSOLUTE MAXIMUM RATINGS (Note 1) PNzare To.92 i pNzzee 0-8 | ‘Temperatures 2N__PNIFTSO FTSO219 © TO-236AV/AB | Storage Temperature 68°C to 200° C-55°C to 180° FTS02222 © -TO-236AA/AB | Operating Junction Temperature eC 180° Power Dissipation (Notes 2&3) Total Dissipation at 2nzzia 2N2a22 25° Ambient Temporature osmw — o5W 25°C Cese Temperature 30w 18 W ‘otal Dissipation at PNz219 TSO 25°C Amblant Temperature 0625 0350" 25°C Case Temperature 10 Voltages & Currents Vexo "Collector to Emitter Voltage sov (Note 4) Vewo. Collector to Base Voltage eov Vewo Emitter to Base Volta Sov fe" Collector Current 800. mA, ELECTRICAL CHARACTERISTICS (25°C Ambiont Temporature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC. MN | MAX] UNITS TEST CONDITIONS: ‘B¥eo | Collector to Baso Breakdown Vollage | 60 V_ [ea T0HA =o. veo | Emiltr to Base Breakdown Vollage | 6.0 V_ [= 104A bao. ‘eco | Emitter Gutott Current 70 _| 7A ° ‘ceo | Collector Cutott C 10 | nA OV. en 0 10 | nA OTa= 1576 sy ate Tr cy whos ones on sppston ing poles oom een sma. “iva mami union tears oC Tnceonto-ar url eitnce oO CA ray al of 2 mW) 28 dln ta setae eG sng nto 3 a or NEE or N22 yee hale ot {Els ov frengfactort 1 mc: ncn ono ural sano 5" CA rt et of 383m Ch Tae wr a ‘ean nan umpeie t80 ontent coe tural ralane 12" ret et of BOM” Centre era stort of ent mtr som erenoas ees 70-35 con tance hearers SFC ng gah it Fer cde! ly rca cs, lero Cue ot T45, NS 3-240FAIRCHILD SEMICONDUCTOR : By DE B4ba624 ao2?sel 5 tT, 4450674 FAIRCHILD SEMICONDUCTOR e4ap 27521 De 2N2219/PN2219/FTSO2219 2N2222/PN2222/FTSO2222 T- 38-a> ELECTRICAL CHARACTERISTICS 26°C Anben! Terporeture ules otherwise noted) Note O) 1 SYMBOL] CHARACTERISTIC Twin [Max] UNITS TEST CONDITIONS | RS ee ear cea wa ES ee 2 2 Gap seee Tansee 1 [_y [esmeat team = — lou Cans esos Be one a oe Es [a [oven vsFAIRCHILD SEMICONDUCTOR — 64 DEB SNLAL7H DORTSee ? T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27522 FAIRCHILD 2N/PN/FTSO/2219A 2N/PN/FTSO2222A NPN Small Signal General Purpose Amplifiers & Switches eehlumbsrger COmpeny 7-35.83 | Yeo «40 (in) @ 10mA PACKAGE 2 NE t00.200 (aw eN/eTs022198, NPW/ETSO2222A) ANZA Tos9 @18.ma BN2OA Tose #eses Son (Bn) @ 150A, tr 286 (Max) @ 150A PNzzIOA Tow 2 Gonptoments > SWPN/FTSO2000A Seren Praaz2n Toe Frsozigh — TORaSANAB ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO22208 —TO.296ANAB Temperatures 2N__ pwieTso Storage Trmperature 65°C 10 20080-85°C10 180°C ‘peratingsuncton Temperature jc sre Power Dissipation (Notes 2 & 3) ‘ota Daapation at anzason2nz222A 25r¢ Ambient Temperature (Note 7) BW OS W 25°0 Cave Temperature gow ew PN FT80. 25°C Amblont Temperature osesw 03s0W" 25°C cave Temperature OW Votlages & Currents ee Colector to Emir Votage wv (Note 4) Veao Collector fo Bate Voge 75v Veo. Emitter to Base Votage cov 1S allestor Curent 00 ma ELECTRICAL CHARACTERISTICS (25°C Ambient Temporaturo unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC, [Min [ WAX] UNITS: TEST CONDITIONS: ‘BVexo. | Collector to Emitter Breakdown Voltage | 40 Vv (ote 5) Beso | Emitter to Base Breakdown Volage [60] v Boao | Collector to 8ase Breakdown Vollage | 75_| v ‘esx | Collector Reverse Current [10 [aa sov Thos re enya Te tory ah on apicaone lng paseo lw uy ee oso 4 Thum tone gt a mannun hin fmpantas a 1760 fnconfocace tural matnce 99 (etn et of 2 mC) and roxio ent ‘inca 120 rion ast SOc fr PsA PNGEON Fv be FISOAMTA zak eee meng ahem nl ‘tion nara asso 36 Vtg toro 28 mW gti ea nr ac ct voFAIRCHILD SEMICONDUCTOR BU DEB 3469674 goe7s23 9 3469674 FAIRCHILD SEMICONDUCTOR 84D 27523 Dw 2N/PN/FTSO22198, 2N/PN/FTSO2222A 45.95 ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC MIN [WAX | UNITS! ‘TEST CONDITIONS: Tero | Collector Reverse Currant 10 | nA i so | aA Teso | Eitor to Base Gutotl Current 70] na x _| Base Current 20_| nA Te [DC Current Gain 3 50 (Note 5) 5 Note 5) 00 | 300 (Note 5) 0 Note 5) 5 {ote 8) 50 Verse: | Collector 19 Emitter Saturation Vorage os |v (Note 5) yo | v Vousus | Base to Emitter Saturation Vonage | 08 | 12] v (Note 5) 20 | _v Gs | Output Capacitance 60] Ga | Input Capacitance 25 | oF Tie | High Frequency Current Gain 30 Te _| Small Signal Current Galn 0 | 300 75_| 375 Je 10mA, Von = 10'V, t= 1.0 kHe Te | input Rasiatance 20 | a0 | Ka ‘OMA, Vex = 10V, 025 | 125 | ko 10 mA, Vex = 10, Ree | Output Conductance 50 | 95 | amno 25_| 200 | jmho Te | Voliage Feedback Ratio ‘300 | x10 400_| 106 Re (he | Real Part of Common Emitor Co a Frequency input Impedance ny “Turn On Delay Time (test ciroultne 28 70 [ ne t Flse Time (eet circult no. 239) 25 | ns a ‘Storage Time (test clout no. 233) 25 | ns v Fall Time (leat croult no 233) [ne Ts. ‘alive Region Tine Constant 25 [ee TG. Collector to Base Time Constant 150_| ps | le=20 mA, Vex = 20, 1= 31 MHz NF | Nolse Figure 40" | dB | le= 100 uA, Vor=10V,Ra= 1.00, BW = 1.0 Hz, f= 1.0 Rie 9-248