APM3054N: Pin Description Features

APM3054N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/15A, RDS(ON)=48m(typ.) @ VGS=10V

RDS(ON)=75m(typ.) @ VGS=4.5V
Super High Dense Cell Design

High Power and Current Handling Capability
TO-252 and SOT-223 Package
Top View of TO-252
Top View of SOT-223
Applications
Switching Regulators
Switching Converters
Top View of SOT-89
Ordering and Marking Information

A P M 3 054 N
Package C ode
D : S O T -8 9
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
TR : Tape & R eel
H a n d lin g C o d e
Tem p. R ange
Package C ode
AP M 3054N U :
A P M 3 0 5 4 N D /V :
XXXXX
AP M 3054N
XXXXX
AP M 3054N
XXXXX
- D a te C o d e
X X X X X - D a te C o d e
Absolute Maximum Ratings

Symbol
V : S O T -2 2 3
(TA = 25C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
20
ID
Maximum Drain Current Continuous
15
IDM
Maximum Drain Current Pulsed
30
IS
Diode Continuous Forward Current
Unit
V
A
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
www.anpec.com.tw
APM3054N
Absolute Maximum Ratings (Cont.)
Symbol
ISM
Parameter
Diode Maximum Pulse Current
T A =25C
PD
Maximum Power Dissipation

T A =100C
TJ
T STG
Symbol
32
62.5
SOT-223
TO-252
25
SOT-223
1.2
Storage Temperature Range
Parameter
Unit
TO-252
Maximum Junction Temperature
Electrical Characteristics
Rating
150
-55 to 150
Test Condition
Min.
APM3054N
Typ.
Max.
Unit
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
VSD
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
VGS=0V, IDS=250A
30
VDS=24V, VGS =0V

VDS=VGS, IDS=250A
100
nA
Gate Leakage Current
VGS=20V, V DS=0V
Drain-Source On-state
VGS=10V, IDS=12A
48
54
Resistance
VGS=4.5V, IDS=6A
75
90
Diode Forward Voltage
ISD=8A, VGS=0V
0.6
1.3
m
V
Dynamic
Qg
Total Gate Charge
9
VDS=15V, VGS =5V,
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
2.4
td(ON)
Turn-on Delay Time
11
tr
Turn-on Rise Time
VDD=15V,ID=2A,
17
td(OFF)
Turn-off Delay Time
VGS=10V, RG=6
37
IDS=10A
5.4
ns
20
tf
Turn-off Fall Time
Ciss
Input Capacitance
VGS=0V
400
Coss
Output Capacitance
VDS=25V
75
C rss
Reverse Transfer
Frequency=1.0MHz
45

Rev. A.2 - Aug., 2002
nC
pF
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APM3054N
Typical Characteristics
Output Characteristics
Transfer Characteristics
25
20
TJ=-55C
ID-Drain Current (A)
ID-Drain Current (A)
VGS=6,7,8,9,10V
15
V GS =5V
10
V GS =4V
20
TJ=25C
TJ=125C
15
10
5
V GS=3V
0
0
0
0
VDS - Drain-to-Source Voltage (V)
10
On-Resistance vs. Drain Current
1.2
0.12
RDS(on)-On-Resistance ()
IDS=250uA
VGS(th)-Threshold Voltage (V)

(Normalzed)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Temperature
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
25
50
75
VGS=4.5V
0.08
0.06
VGS=10V
0.04
0.02
0.00
100 125 150
Tj - Junction Temperature (C)

Rev. A.2 - Aug., 2002
0.10
10
ID - Drain Current (A)
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APM3054N
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature

0.10
0.35
VGS=10V
(Normalized)
ID=6A
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
-50
10
-25
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
On-Resistance vs. Junction Temperature
Gate Charge
125
150
10
0.10
V GS=10V
0.09 IDS=12A
VGS-Gate-Source Voltage (V)
0.09 ID=12A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V DS =15V
IDS=10A
0.01
0.00
-50
-25
25
50
75
100
125
150
5.0
7.5
10.0
12.5
15.0
QG - Gate Charge (nC)
TJ - Junction Temperature (C)

Rev. A.2 - Aug., 2002
2.5
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APM3054N
Capacitance
Source-Drain Diode Forward Voltage
750
30
IS-Source Current (A)
Capacitance (pF)
625
500
Ciss
375
250
125
0
10
10
15
20
TJ=25C
TJ=150C
Coss
Crss
25
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
30
VDS - Drain-to-Source Voltage (V)
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
Single Pulse Power

TO-252
SOT-223
250
140
120
200
Power (W)
Power (W)
100
150
100
80
60
40
50
20
0
1E-3
0.01
0.1
10
100
0
0.01
1000
10
100
1000
Time (sec)
Time (sec)

Rev. A.2 - Aug., 2002
0.1
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APM3054N
Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient
Thermal Impedance
TO-252
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
0.01
1E-4
1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50C/W
3.TJM-TA=PDMZthJA
1E-3
0.01
0.1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Effective Transient

Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
SOT-223
1
Duty Cycle = 0.5
D= 0.2
0.1
D= 0.1
D= 0.05
D= 0.02
0.01
D= 0.01
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=42C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE
1E-3
1E-4
1E-3
0.01
0.1
10
100
1000
Square Wave Pulse Duration (sec)

Rev. A.2 - Aug., 2002
www.anpec.com.tw
APM3054N
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D1
a
E
H
L
C
B1
B
e
e1
A
a
D im
A
B
B1
C
D
D1
e
e1
E
H
L
M illim eters
M in.
1.40
0.40
0.35
0.35
4.40
1.35
Inches
M ax.
1.60
0.56
0.48
0.44
4.60
1.83
M in.
0.055
0.016
0.014
0.014
0.173
0.053
1.50 B SC
3.00 B SC
2.29
3.75
0.80

Rev. A.2 - Aug., 2002
M ax.
0.063
0.022
0.019
0.017
0.181
0.072
0.059 BSC
0.118 B SC
2.60
4.25
1.20
10
0.090
0.148
0.031
0.102
0.167
0.047
10
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APM3054N
Package Information
TO-252( Reference JEDEC Registration TO-252)
E
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
5. 3 34
6. 2 2
0. 2 10
0. 2 45
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
9. 3 98
10 . 41
0. 3 70
0. 4 10
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80

Rev. A.2 - Aug., 2002
0. 0 20
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APM3054N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
B1
a
c
E
L
K
e
A1
e1
b
Dim
A
A1
B
B1
c
D
E
e
e1
H
L
K
Millimeters
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Inches
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
2.3 BSC
4.6 BSC
6.70
0.91
1.50
0

Rev. A.2 - Aug., 2002
0.09 BSC
0.18 BSC
7.30
1.10
2.00
10
0.26
0.04
0.06
0
13
0.29
0.04
0.08
10
13
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APM3054N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183C
Pre-heat temperature
Time
Classification Reflow Profiles

Convection or IR/
Convection
Average ramp-up rate(183C to Peak)
3C/second max.
120 seconds max
Preheat temperature 125 25C)
60 150 seconds
Temperature maintained above 183C
Time within 5C of actual peak temperature 10 20 seconds
Peak temperature range
220 +5/-0C or 235 +5/-0C
Ramp-down rate
6 C /second max.
6 minutes max.
Time 25C to peak temperature
VPR
10 C /second max.
60 seconds
215-219C or 235 +5/-0C
10 C /second max.
Package Reflow Conditions

pkg. thickness 2.5mm
and all bgas
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C
pkg. thickness < 2.5mm and

pkg. volume 350 mm

Rev. A.2 - Aug., 2002
10
pkg. thickness < 2.5mm and pkg.

volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
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APM3054N
R e lia b ilit y te s t p r o g r a m
Te s t ite m
S O L D E R A B IL IT Y
H O LT
PCT
TST
ESD
L a tc h -U p
M e th o d
M IL -S T D -8 8 3 D -2 0 0 3
M IL -S T D -8 8 3 D -1 0 0 5 .7
J E S D -2 2 - B , A 1 0 2
M IL -S T D -8 8 3 D -1 0 11 .9
M IL -S T D -8 8 3 D -3 0 1 5 .7
JESD 78
D e s c rip tio n
2 45 C , 5 S E C
1 0 0 0 H rs B ia s @ 1 2 5 C
1 6 8 H rs , 1 0 0 % R H , 1 2 1 C
-6 5 C ~ 1 5 0 C , 2 0 0 C y c le s
V H B M > 2 K V, V M M > 2 0 0 V
1 0 m s , I tr > 1 0 0 m A
Carrier Tape
t
D
Po
E
P1
Bo
F
W
Ko
Ao
D1
T2
J
C
A
T1

Rev. A.2 - Aug., 2002
11
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APM3054N
Application
SOT-89
Application
TO-252
Application
SOT-223
178 1
70 2
D1
5.5 0.05
1.5 0.1
T1
T2
1.3 0.3
W
12 + 0.3
12 - 0.1
14 2
8 0.1
1.75 0.1
Po
P1
Ao
Bo
Ko
1.5 0.1
4.0 0.1
2.0 0.1
4.8 0.1
4.5 0.1
T2
13 0. 5
2 0.5
2.5 0.5
W
16+ 0.3
- 0.1
100 2
T1
16.4 + 0.3
-0.2
330 3
8 0.1
1.75 0.1
D1
Po
P1
Ao
Bo
Ko
7.5 0.1
1.5 +0.1
1.5 0.25
4.0 0.1
2.0 0.1
6.8 0.1
10.4 0.1
2.5 0.1
0.30.05
T1
T2
3301
621.5
C
12.75
0.15
2 0.6
12.4 +0.2
2 0.2
12 0.3
8 0.1
1.75 0.1
D1
Po
P1
Ao
Bo
Ko
5.5 0.05
1.5+ 0.1
1.5+ 0.1
7.5 0.1
2.1 0.1
0.30.05
13.5 0.15 3 0.15
4.0 0.1 2.0 0.05 6.9 0.1
1.80 0.1 0.30.013
Cover Tape Dimensions

Application
SOT- 89
SOT- 223
TO- 252
Carrier Width
12
12
16
Cover Tape Width

9.3
9.3
13.3
Devices Per Reel

1000
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Rev. A.2 - Aug., 2002
12
www.anpec.com.tw
This datasheet has been downloaded from:

www.DatasheetCatalog.com
Datasheets for electronic components.

APM3054N: Pin Description Features

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APM3054N: Pin Description Features

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APM3054N

N-Channel Enhancement Mode MOSFET

30V/15A, RDS(ON)=48m(typ.) @ VGS=10V

Super High Dense Cell Design

Top View of TO-252

Top View of SOT-223

Top View of SOT-89

Ordering and Marking Information

Absolute Maximum Ratings

(TA = 25C unless otherwise noted)

Maximum Drain Current Continuous

Maximum Drain Current Pulsed

Diode Continuous Forward Current

(TA = 25C unless otherwise noted)

Maximum Power Dissipation

Storage Temperature Range

Maximum Junction Temperature

(TA = 25C unless otherwise noted)

VDS=24V, VGS =0V

Gate Leakage Current

Diode Forward Voltage

Total Gate Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Copyright ANPEC Electronics Corp.

ID-Drain Current (A)

ID-Drain Current (A)

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

VGS(th)-Threshold Voltage (V)

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Temperature

100 125 150

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp.

ID - Drain Current (A)

On-Resistance vs. Gate-to-Source Voltage

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature

VGS-Gate-Source Voltage (V)

QG - Gate Charge (nC)

TJ - Junction Temperature (C)

Copyright ANPEC Electronics Corp.

Source-Drain Diode Forward Voltage

IS-Source Current (A)

VDS - Drain-to-Source Voltage (V)

VSD -Source-to-Drain Voltage (V)

Single Pulse Power

Single Pulse Power

Copyright ANPEC Electronics Corp.

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t2

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Normalized Thermal Transient Impedence, Junction to Ambient

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

Copyright ANPEC Electronics Corp.

Copyright ANPEC Electronics Corp.