FDD6685

30V P-Channel PowerTrench MOSFET

Features

General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild

Semiconductors

advanced

PowerTrench

40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V
RDS(ON) = 30 m @ VGS = 4.5 V

process. It has been optimized for power management

Fast switching speed

applications requiring a wide range of gave drive

High performance trench technology for extremely

low RDS(ON)

voltage ratings (4.5V 25V).

High power and current handling capability

Qualified to AEC Q101

D
G

S
TO-252
D

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Drain-Source Voltage

Ratings
30

Units

VDSS
VGSS

Gate-Source Voltage

25

40
11
100

(Note 1)

52

(Note 1a)

3.8

ID

PD

Parameter

Continuous Drain Current @TC=25C

(Note 3)
@TA=25C
(Note 1a)
Pulsed, PW 100s (Note 1b)
Power Dissipation for Single Operation

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

1.6

55 to +175

Thermal Characteristics
RJC

Thermal Resistance, Junction-to-Case

(Note 1)

2.9

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

2011 Fairchild Semiconductor Corporation

FDD6685 Rev D1

FDD6685

May 2011

FDD6685

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDD6685

FDD6685

13

12mm

2500 units

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min Typ Max

Units

42

mJ

11

Drain-Source Avalanche Ratings (Note 4)

EAS
IAS

Single Pulse Drain-Source

Avalanche Energy
Maximum Drain-Source
Avalanche Current

ID = 11 A

Off Characteristics
BVDSS

DrainSource Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
TJ
IDSS

Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

ID = 250 A, Referenced to 25C

VDS = 24 V,

VGS = 0 V

IGSS

GateBody Leakage

VGS = 25V,

VDS = 0 V

100

nA

On Characteristics

30

V
24

mV/C

(Note 2)

VGS(th)
VGS(th)
TJ

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Gate Threshold Voltage

Temperature Coefficient

ID = 250 A, Referenced to 25C

RDS(on)

Static DrainSource
OnResistance

14
21
20

ID(on)

OnState Drain Current

VGS = 10 V,
ID = 11 A
VGS = 4.5 V,
ID = 9 A
VGS = 10 V,ID = 11 A,TJ=125C
VGS = 10 V,
VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V,

ID = 11 A

26

VDS = 15 V,
f = 1.0 MHz

V GS = 0 V,

1715

pF

440

pF

225

pF

1.8

V
mV/C

20
30

20

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics

VGS = 15 mV,

f = 1.0 MHz

3.6

VDD = 15 V,
VGS = 10 V,

ID = 1 A,
RGEN = 6

17

31

ns

11

21

ns
ns

(Note 2)

td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

43

68

tf

TurnOff Fall Time

21

34

ns

Qg

Total Gate Charge

17

24

nC

Qgs

GateSource Charge

Qgd

GateDrain Charge

VDS = 15V,
VGS = 5 V

ID = 11 A,

nC

nC

DrainSource Diode Characteristics and Maximum Ratings

VSD
Trr

DrainSource Diode Forward

Voltage
Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

VGS = 0 V,

IS = 3.2 A

IF = 11 A,
diF/dt = 100 A/s

(Note 2)

0.8

1.2

26

ns

13

nC

FDD6685 Rev D1

FDD6685

Electrical Characteristics

TA = 25C unless otherwise noted

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) RJA = 40C/W when mounted on a

1in2 pad of 2 oz copper

b) RJA = 96C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. Maximum current is calculated as:

PD
RDS(ON)

where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V.

4. Starting TJ = 25C, L = 0.69mH, IAS = 11A

FDD6685 Rev D1

FDD6685

Typical Characteristics

40

2.4
VGS = -10V

-4.5V

-ID, DRAIN CURRENT (A)

-6.0V

NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-4.0V
-5.0V

30

-3.5V

20

10
-3.0V

1
2
-VDS, DRAIN-SOURCE VOLTAGE (V)

1.8
-4.0V
1.6
-4.5V
-5.0V

1.4

-6.0V

1.2

-8.0V
-10V

Figure 1. On-Region Characteristics.

4
6
-ID, DRAIN CURRENT (A)

10

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.08
ID = -11.0A
VGS = -10V

ID = -5.5A
RDS(ON), ON-RESISTANCE (OHM)

NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

0.8

1.4

1.2

0.8

0.6

0.06

0.04

TA = 125 C

0.02

TA = 25 C

0
-50

-25

0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)

150

175

Figure 3. On-Resistance Variation with

Temperature.

4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

40

100
VGS = 0V

TA = -55oC

-IS, REVERSE DRAIN CURRENT (A)

VDS = -5V
-ID, DRAIN CURRENT (A)

VGS = -3.5V

2.2

125 C

30
o

25 C
20

10

10
o

TA = 125 C
1
25oC
0.1
-55oC
0.01

0.001

0.0001
1

2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)

1.4

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD6685 Rev D1

FDD6685

Typical Characteristics

2400
ID = -11.0 A

f = 1MHz
VGS = 0 V

VDS = 10V

CAPACITANCE (pF)

-VGS, GATE-SOURCE VOLTAGE (V)

10

30V
6
20V
4

1800
Ciss

1200

Coss

600
2
Crss
0

0
0

10
15
20
Qg, GATE CHARGE (nC)

25

30

Figure 7. Gate Charge Characteristics.

10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 8. Capacitance Characteristics.

100
P(pk), PEAK TRANSIENT POWER (W)

1000

100
1ms
10ms
100ms

RDS(ON) LIMIT
10

100s

1
10s
DC

1
VGS = 10V
SINGLE PULSE
RJA = 96oC/W

0.1

TA = 25oC
0.01
0.01

0.10
1.00
10.00
VDS, DRAIN-SOURCE VOLTAGE (V)

100.00

SINGLE PULSE
RJA = 96C/W
TA = 25C

80

60

40

20

0
0.01

Figure 9. Maximum Safe Operating Area.

0.1

1
10
t1, TIME (sec)

100

1000

Figure 10. Single Pulse Maximum

Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

D = 0.5

RqJA(t) = r(t) * RqJA

RqJA = 96 C/W

0.2

0.1

0.1
0.05

P(pk)
0.02

t1

0.01

t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6685 Rev D1

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I54