Drexel University

ECE-E302, Electronic Devices

Lab VII: Bipolar Junction Transistor

Bipolar Junction Transistor

Objectives
To obtain the volt-ampere characteristic curves of a Bipolar Junction Transistor (BJT) and
to demonstrate that the transistor is capable of producing amplification when biased in the active
region. Typical gain parameters of the given transistor are calculated.

Theory
Bipolar Junction Transistor:
A bipolar junction transistor (BJT) is widely used in discrete circuits as well as in IC
design, both analog and digital. Its main applications are in amplification of small signals, and in
switching digital logic signals. In a BJT, both majority carriers and minority carriers play a role in
the operation of the transistor, hence the term bipolar.
The circuit symbol of the NPN transistor with current and voltage polarities marked is shown in
Figure 1.
IC
Collector
+
+
VBE

Base

VCE

IB
IE

Emitter

Figure 1. Circuit symbol of a NPN BJT

The characteristic curves of BJT are not only helpful in studying the behavior of the
transistor but also in determining the region of operation for the transistor. As was done with a
diode, we can draw a load line on the above curves to determine the operating point of the
transistor. The intersection of the load line with the curves gives the operating point, referred to
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Drexel University
ECE-E302, Electronic Devices
Lab VII: Bipolar Junction Transistor
as the Q-point. The regions of interest in a transistor are the amplifying region, cutoff region and
the saturation region. The last two are extensively used when the transistor is used in digital
circuits. These three regions are defined as follows:
CUTOFF : both the emitter and collector junction are reverse biased
SATURATION : both the emitter and collector junctions are forward biased
ACTIVE : emitter junction is forward biased, collector junction is reverse biased
In the active region, the collector current is independent of the value of the collector
voltage and hence the transistor behaves as an ideal current source where the current is
determined by VBE.
The collector current is dependent on the base current as,
IC IB 1 ICO V
cons tan t
CE

(1)

whereis called the dc common emitter current gain of the transistor, defined as

IC

(2)

IB

Another parameter of interest in the active region is , the current transfer ratio, or common base
current gain, which is defined by

IC ICO
IE

VCB cons tan t

(3)

The current gain parameters and are related by:

(4)

When the transistor is biased in the active region it operates as an amplifier. The biasing
problem is that of establishing a constant DC current in the emitter (or the collector) which is
insensitive to variations in temperature, value of and so on. This is equivalent to designing the
transistor circuit so that the Q-point is in the middle of the DC load line. Changing the biasing
resistors has the effect of shifting the Q-point along the DC load line, moving the transistor into
the regions of cutoff or saturation. The amplification property can be graphically interpreted as
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Drexel University
ECE-E302, Electronic Devices
Lab VII: Bipolar Junction Transistor
seen in Figure 2.
I

Output Signal
Q-point

Ic

time

Vbe
vbe
Input Signal
time

Figure 2. Amplification of a small signal

Load line analysis
Writing the output loop equation from Figure 4, we have
VCC ICR C VCE IERE 0

IC fVCE ,IB

(5)
(6)

For large,
IE IC

(7)

Using equations 5 and 7, we can write:

VCC IC R C R E VCE 0

or
IC

VCC VCE
RC RE

VCC
1
VCE
R C RE
RC RE

(8)

(9)

This is the (straight line) equation of the load line on a plot of I C vs VCE, where VCC is the
power supply voltage. The axis crossings can be found by setting IC=0 or VCE = 0.

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Drexel University
ECE-E302, Electronic Devices
Lab VII: Bipolar Junction Transistor
VCC
RC+ RE

IC

I CQ

VCQ
VCC
Q
Figure 3. BJT IV curves and load line

IB

VCE

The analysis suggests that small sinusoidal signals, vbe, superimposed on the DC voltage
VBE, will give a sinusoidal collector current, iC, superimposed on the DC current I C at the Qpoint. Depending upon the configuration of the resistors in the collector, the emitter, and the load,
there will be an ideal Q-point for a maximum distortion-free output signal amplitude. Determining
these resistor requires constructing an ac loadline. These topics will be covered in Electronics II.

PROCEDURE - Bipolar Transistors

a) Obtain the volt-ampere characteristics of the given BJT using a curve tracer. Be sure to
record the part number of the transistor in your notebook.
b) Construct the circuit of Figure 4
c) Record the ammeter and voltmeter readings.
d) Superimpose the dc load line on the characteristic curves and check whether the
transistor is operating at the Q-point.
e) Modify your circuit as shown in Figure 5, with Rc = 13 k and R2 = 2 k. Apply a
small (~100 mV) sinusoidal input at 5 kHz. Look at the input and output across the
load resistor (RL) on the scope. Obtain a printout of these waveforms.

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Drexel University
ECE-E302, Electronic Devices
Lab VII: Bipolar Junction Transistor
VCC = 20V
IC

Rc = 2k

R1=13k
mA
IB
uA

VCE

IE

R2=2k

Re=400

Figure 4. Bipolar transistor bias circuit

Vcc

Vcc

V1
20V
R 1
13k

R c
2k

0
C 4

Q 1

C 1
100u

VO FF = 0k
VAM PL = 100m v
FR EQ = 5k

V2

100u

Q 2N 2222

R 2
2k

R e
400

Figure 5. Bipolar transistor amplifier

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R L
2k

TO SCOPE

Drexel University
ECE-E302, Electronic Devices
Lab VII: Bipolar Junction Transistor
(f) Increase the amplitude of the sine wave as much as possible before distortion occurs.
Obtain a printout of a distorted output. Record the level of the input signal.
(g) Decrease the bias resistor R2 to 500 . Apply the small signal as in step (e). Has the
output waveform changed? Obtain printout.
(h) Increase the amplitude of the sine wave as much as possible before distortion occurs.
Obtain a printout of a distorted output. Record the level of the input signal.
Answer the following questions in your report:
1. From the recorded measurements in part (c), What are and of your transistor?
2. When the bias resistor was changed in step (g), did the operation point of the transistor
go into (or closer to) saturation or cutoff region? Why?
3. Was the level of the input signal in step (h) higher or smaller than that obtained in step
(f)? Why?

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