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Tda 8924
Tda 8924
DATA SHEET
TDA8924
2 120 W class-D power amplifier
Objective specification
2003 Jul 28
Philips Semiconductors
Objective specification
TDA8924
CONTENTS
15
16
APPLICATION INFORMATION
16.1
16.2
16.3
16.4
16.5
16.6
16.7
16.8
16.9
16.10
16.11
16.12
BTL application
Pin MODE
Output power estimation
External clock
Heatsink requirements
Output current limiting
Pumping effects
Reference design
PCB information for HSOP24 encapsulation
Classification
Reference design: bill of materials
Curves measured in the reference design
17
PACKAGE OUTLINE
18
SOLDERING
18.1
FEATURES
APPLICATIONS
GENERAL DESCRIPTION
ORDERING INFORMATION
BLOCK DIAGRAM
PINNING
FUNCTIONAL DESCRIPTION
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
8.3.4
8.4
General
Pulse width modulation frequency
Protections
Over-temperature
Short-circuit across the loudspeaker terminals
and to supply lines
Start-up safety test
Supply voltage alarm
Differential audio inputs
LIMITING VALUES
10
THERMAL CHARACTERISTICS
11
QUALITY SPECIFICATION
12
STATIC CHARACTERISTICS
19
13
SWITCHING CHARACTERISTICS
20
DEFINITIONS
14
21
DISCLAIMERS
2003 Jul 28
18.2
18.3
18.4
18.5
Philips Semiconductors
Objective specification
TDA8924
FEATURES
APPLICATIONS
Television sets
Home-sound sets
Multimedia systems
Low distortion
GENERAL DESCRIPTION
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General; VP = 24 V
VP
supply voltage
12.5
24
30
Iq(tot)
100
mA
efficiency
83
120
output power
Po
output power
Po
VP = 24 V
240
VP = 20 V
175
Notes
1. Quiescent current in application; value strongly depends on circuitry connected to the output pin. This also means
that quiescent dissipation of the chip is lower than the VP Iq.
2. Output power is measured indirectly; based on RDSon measurement.
5
ORDERING INFORMATION
TYPE
NUMBER
TDA8924TH
2003 Jul 28
PACKAGE
NAME
HSOP24
DESCRIPTION
plastic thermal enhanced small outline package; 24 leads; low
stand-off height; heatsink
VERSION
SOT566-3
Philips Semiconductors
Objective specification
TDA8924
BLOCK DIAGRAM
VDDA1
IN1
IN1+
SGND1
OSC
MODE
VDDP2
STABI PROT
10
18
13
23
VDDP1
14
15
INPUT
STAGE
PWM
MODULATOR
SWITCH1
CONTROL
AND
ENABLE1 HANDSHAKE
mute
11
DRIVER
HIGH
16
STABI
VSSP1
7
6
OSCILLATOR
MANAGER
MODE
TEMPERATURE SENSOR
CURRENT PROTECTION
TDA8924
VDDP2
IN2
ENABLE2
CONTROL
SWITCH2
AND
HANDSHAKE
RELEASE2
5
4
INPUT
STAGE
PWM
MODULATOR
12
24
VSSA2 VSSA1
VSSD
19
HW
2003 Jul 28
BOOT2
2
mute
IN2+
OUT1
DRIVER
LOW
22
SGND2
BOOT1
RELEASE1
DRIVER
HIGH
21
OUT2
DRIVER
LOW
17
20
VSSP1
VSSP2
MDB569
Philips Semiconductors
Objective specification
TDA8924
PINNING
SYMBOL
PIN
DESCRIPTION
VSSA2
SGND2
VDDA2
IN2
IN2+
MODE
OSC
handbook, halfpage
VSSD 24
VSSA2
VDDP2 23
SGND2
BOOT2 22
VDDA2
IN1+
IN1
OUT2 21
IN2
VDDA1
10
VSSP2 20
IN2+
SGND1
11
MODE
VSSA1
12
STABI 18
OSC
VSSP1 17
IN1+
OUT1 16
IN1
PROT
13
VDDP1
14
BOOT1
15
OUT1
16
VSSP1
17
STABI
18
HW
19
VSSP2
20
OUT2
21
BOOT2
22
VDDP2
23
VSSD
24
2003 Jul 28
HW 19
TDA8924TH
BOOT1 15
10 VDDA1
VDDP1 14
11 SGND1
PROT 13
12 VSSA1
MDB568
Philips Semiconductors
Objective specification
TDA8924
The amplifier system can be switched in three operating
modes with pin MODE:
FUNCTIONAL DESCRIPTION
General
handbook, halfpage
mute/on
MODE pin
R
SGND
MBL463
2003 Jul 28
+5 V
standby/
mute
Philips Semiconductors
Objective specification
TDA8924
audio
switching
Vmode
When switching from standby
to mute, there is a delay of
100 ms before the output
starts switching. The audio
signal is available after Vmode
has been set to operating, but
not earlier than 150 ms after
switching to mute.
operating
4V
mute
2V
0 V (SGND)
standby
100 ms
time
>50 ms
audio
switching
Vmode
When switching from standby
to operating, there is a first
delay of 100 ms before the
outputs starts switching. The
audio signal is available after
a second delay of 50 ms.
operating
4V
0 V (SGND)
standby
100 ms
50 ms
time
MBL465
8.2
9 10
following equation: f osc = ------------------- Hz
R OSC
2003 Jul 28
Philips Semiconductors
Objective specification
TDA8924
Remark: This test is only operational prior to or during the
start-up sequence, and not during normal operation.
In an application circuit:
Internal oscillator: ROSC connected from pin OSC to VSS
External oscillator: connect oscillator signal between pin
OSC and SGND; delete ROSC and COSC.
8.3
Protections
8.3.4
OVER-TEMPERATURE
Philips Semiconductors
Objective specification
TDA8924
OUT1
IN1+
IN1
Vin
SGND
IN2+
IN2
OUT2
power stage
MBL466
2003 Jul 28
Philips Semiconductors
Objective specification
TDA8924
9 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
30
5.5
30
11.3
VP
supply voltage
VMODE
Vsc
IORM
Tstg
storage temperature
55
+150
Tamb
ambient temperature
40
+85
Tvj
150
Note
1. See also Section 16.6.
10 THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
35
K/W
Rth(j-c)
note 1
1.3
K/W
Note
1. See also Section 16.5.
11 QUALITY SPECIFICATION
In accordance with SNW-FQ611-part D if this type is used as an audio amplifier.
2003 Jul 28
10
Philips Semiconductors
Objective specification
TDA8924
12 STATIC CHARACTERISTICS
VP = 24 V; Tamb = 25 C; measured in Fig.9; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
note 1
12.5
24
30
Iq(tot)
no load connected
100
mA
Istb
100
500
input voltage
note 2
5.5
IMODE
input current
VMODE = 5.5 V
1000
Vstb
notes 2 and 3
0.8
Vmute
notes 2 and 3
2.2
3.0
Von
notes 2 and 3
4.2
5.5
note 2
DC input voltage
150
mV
VOO(SE)
operating mute
80
mV
VOO(BTL)
215
mV
VOO(BTL)
operating mute
115
mV
11
13
15
Temperature protection
Tprot
150
Thys
hysteresis on temperature
protection
20
Notes
1. The circuit is DC adjusted at VP = 12.5 V to 30 V.
2. With respect to SGND (0 V).
3. The transition regions between standby, mute and operating mode contain hysteresis (see Fig.6).
4. With respect to VSSP1.
2003 Jul 28
11
Philips Semiconductors
Objective specification
TDA8924
MBL467
STBY
MUTE
0.8
2.2
ON
3.0
4.2
5.5
VMODE (V)
13 SWITCHING CHARACTERISTICS
VDD = 24 V; Tamb = 25 C; measured in Fig.9; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
fosc
oscillator frequency
ROSC = 30.0 k
290
317
344
kHz
210
600
kHz
VOSC(trip)
SGND + 2.5
ftrack
210
600
kHz
VP(OSC)(ext)
minimum symmetrical
supply voltage for external
oscillator application
15
Note
1. Frequency set with ROSC, according to the formula in Section 8.2.
2003 Jul 28
12
SGND + 6
Philips Semiconductors
Objective specification
TDA8924
THD
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
70
RL = 4 ; VP = 27 V; THD = 10 %; note 2
90
93
RL = 3 ; VP = 27 V; THD = 10 %; note 2
115
95
RL = 2 ; VP = 24 V; THD = 10 %; note 2
120
fi = 1 kHz
0.05
fi = 10 kHz
0.07
Po = 1 W; note 3
Gv(cl)
28
dB
efficiency
Po = 125 W; note 4
83
SVRR
55
dB
40
50
dB
Zi
input impedance
Vn(o)
cs
channel separation
Gv
channel unbalance
Vo(mute)
CMRR
55
dB
80
dB
45
68
operating; Rs = 0 ; note 7
200
400
operating; Rs = 10 k; note 8
230
mute; note 9
220
70
dB
dB
note 11
400
Vi(CM) = 1 V (RMS)
75
dB
note 10
Notes
1. RsL = series resistance of inductor of low-pass LC filter in the application.
2. Output power is measured indirectly; based on RDSon measurement.
3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a lower
order low-pass filter a significantly higher value is found, due to the switching frequency outside the audio band.
Maximum limit is guaranteed but may not be 100 % tested.
4. Output power measured across the loudspeaker load.
5. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 .
6. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 .
7. B = 22 Hz to 22 kHz; Rs = 0 ; maximum limit is guaranteed but may not be 100 % tested.
8. B = 22 Hz to 22 kHz; Rs = 10 k.
9. B = 22 Hz to 22 kHz; independent of Rs.
10. Po = 1 W; Rs = 0 ; fi = 1 kHz.
11. Vi = Vi(max) = 1 V (RMS); maximum limit is guaranteed but may not be 100 % tested.
2003 Jul 28
13
Philips Semiconductors
Objective specification
TDA8924
THD
PARAMETER
output power
CONDITIONS
efficiency
SVRR
Zi
input impedance
Vn(o)
TYP.
MAX.
UNIT
160
RL = 3 ; VP = 20 V; THD = 10 %; note 2
205
135
RL = 4 ; VP = 20 V; THD = 10 %; note 2
175
200
RL = 4 ; VP = 24 V; THD = 10 %; note 2
240
fi = 100 Hz
0.015
fi = 1 kHz
0.015
0.05
Po = 1 W; note 3
0.015
34
dB
Po = 240 W; note 4
83
49
dB
fi = 10 kHz
Gv(cl)
MIN.
36
44
dB
49
dB
80
dB
22
34
operating; Rs = 0 ; note 7
280
560
operating; Rs = 10 k; note 8
300
mute; note 9
280
Vo(mute)
note 10
500
CMRR
Vi(CM) = 1 V (RMS)
75
dB
Notes
1. RsL = series resistance of inductor of low-pass LC filter in the application.
2. Output power is measured indirectly; based on RDSon measurement.
3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a low
order low-pass filter a significant higher value will be found, due to the switching frequency outside the audio band.
Maximum limit is guaranteed but may not be 100 % tested.
4. Output power measured across the loudspeaker load.
5. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 .
6. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 .
7. B = 22 Hz to 22 kHz; Rs = 0 ; maximum limit is guaranteed but may not be 100 % tested.
8. B = 22 Hz to 22 kHz; Rs = 10 k.
9. B = 22 Hz to 22 kHz; independent of Rs.
10. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz; maximum limit is guaranteed but may not be 100 % tested.
2003 Jul 28
14
Philips Semiconductors
Objective specification
TDA8924
16 APPLICATION INFORMATION
16.1
BTL application
BTL: P o(1%)
2
RL
--------------------- 2V P ( 1 t min f osc )
R L + 1.2
= --------------------------------------------------------------------------------------------2 RL
Maximum current:
2V P ( 1 t min f osc )
I o(peak) = -------------------------------------------------------- should not exceed 12 A.
R L + 1.2
Legend:
16.2
Pin MODE
RL = load impedance
SE: P o(1%)
16.4
External clock
2
RL
--------------------- V P ( 1 t min f osc )
R L + 0.6
= ----------------------------------------------------------------------------------------2 RL
Maximum current:
V P ( 1 t min f osc )
I o(peak) = ---------------------------------------------------- should not exceed 12 A.
R L + 0.6
VDDA
2 k
0
0+
11
10
CTC
ASTAB
4
TRIGGER
ASTAB+
5
14
120 pF
RTC
HEF4047BT
9.1 k
7
RCTC
VDD
VSS
HOP
220
nF
5.6 V
4.3 V
13
8
+TRIGGER
12
MR
RETRIGGER
GND
CLOCK
MBL468
2003 Jul 28
15
Philips Semiconductors
Objective specification
TDA8924
Heatsink requirements
MBL469
30
handbook, halfpage
Pdiss
(W)
(1)
20
R th(j-a)
T j(max) T A
= ---------------------------P diss
(2)
10
(3)
(4)
(5)
(1)
(2)
(3)
(4)
(5)
Example:
Po = 2 100 W into 2
Tamb = 60 C
40
60
100
80
Tamb (C)
Rth(j-a) = 5 K/W.
Rth(j-a) = 10 K/W.
Rth(j-a) = 15 K/W.
Rth(j-a) = 20 K/W.
Rth(j-a) = 35 K/W.
Fig.8
Tj(max) = 150 C
20
16.6
2003 Jul 28
16
Philips Semiconductors
Objective specification
TDA8924
16.7
Pumping effects
V P ( 1 t min f osc )
Z L --------------------------------------- 0.6 for SE application.
I ORM I ripple
2V P ( 1 t min f osc )
Z L ------------------------------------------- 1.2 for BTL application.
I ORM I ripple
Legend:
ZL = load impedance
16.8
2003 Jul 28
Reference design
17
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+25 V
VDD
L1
BEAD
100 nF
VDDP
C1
470 F
R1(3)
10 k
GND
C3
47 F
GND
R2(3)
9.1 k
25 V
VSS
C7
BTL: remove IN2, R8, R9, C18, C19, C21 and close J3 and J4.
BTL: connect loudspeaker between OUT1+ and OUT2.
BTL: R1 and R2 are only required when an asymmetrical supply is used (VSS = 0 V).
In case of hum close J1 and J2.
L2
BEAD
C2
470 F
R3
39 k
VSSP
L3
BEAD
100 nF
VDDA
R4 39 k
GND
VDDA
C4
47 F
mute
C8
220 nF
GND
L4
BEAD
on
S1
C5
47 F
Z1
5.6 V
off
VSSA
VSSA
VDDA
C10
100 nF
GND
VSSA
C11
220 nF
C12
100 nF
VDDA1
VSSA1
GND
C9
220 nF
VDDP
R5
30 k
C13
100 nF
GND
VSSP
C14
220 nF
C15
100 nF
VDDP1
VSSP1
GND
GND
GND
18
R6
C16
5.6 k 470 nF
IN1+
in 1
C20
330 pF
(4)
R7
C17
5.6 k 470 nF
IN1
SGND
J3(1)
14
GND
C24
560 pF
17
BOOT1
C22
15 nF
9
16
R10
4.7
C26
1 F
C28
220 nF
SGND
OUT1
R12
22
OUT1
C30
15 nF
L5
10 H
11
J4(1)
(4)
R8
C18
5.6 k 470 nF
C21
330 pF
in 2
L6
10 H
OUT2
C23
15 nF
5
22
R11
4.7
BOOT2
IN2
4
R9
C19
5.6 k 470 nF
3
VSSA2
24
VDDA2
VSSD
GND
C34
100 nF
C35
220 nF
STABI
C33
47 pF
23
VSSP
20
VDDP2
PROT HW
C29
220 nF
SE 2
OUT2+
SGND
VSSP2
GND
GND
GND
MDB570
GND
C37
100 nF
C36
100 nF
VDDA
19
C27
1 F
R13
22
C38
220 nF
VDDP
C39
100 nF
VSSP
TDA8924
VSSA
C32
220 nF
13
C25
560 pF
OUT2
C31
15 nF
Objective specification
GND
18
BTL 4
(2)
2
21
IN2+
SE 2
OUT1+
TDA8924
SGND2
J2
12
MODE
15
SGND1
J1
GND
10
8
OSC
Philips Semiconductors
GND
C6
(1)
(2)
(3)
(4)
2003 Jul 28
Every decoupling to ground (plane) must be made as close as possible to the pin.
To handle 20 Hz under all conditions in stereo SE mode, the external power supply
needs to have a capacitance of at least 4700 F per supply line; VP = 27 V (max).
Philips Semiconductors
Objective specification
TDA8924
16.10 Classification
2003 Jul 28
19
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C35
C21
U1
C8
C20
C14
L5
C27
C11
C33
J4
J3
Z1
C26
On
Out2 +
Out1+
S1
VDD GND VSS
TDA8920/21/22/23/24TH
state of D art
In1
In2
Off
Top copper
Philips Semiconductors
1-2002
C38
L6
2003 Jul 28
PCB version 4
20
C25
C34
C1
R11
C23
C37
C9 C36 C39
C32
C10 C15
R5
C13
C12
C5
L4
R3
C19
C16
R8
R9
J2
R7
R6
J1
L2 L1
C7
L3
C30
C6
R2
R1
PHILIPS SEMICONDUCTORS
C28
C31
R13
C29
Bottom copper
MDB567
Fig.10 Printed-circuit board layout for the TDA8924TH (some of the components showed on the top silk side have to be mounted on the bottom
side for a proper heatsink fitting).
TDA8924
R12
Objective specification
R4
C2
C24 R10
C17 C4
C18
C3
C22
Philips Semiconductors
Objective specification
TDA8924
Single-chip class-D audio amplifier printed-circuit board (version 4; 01-2002) for TDA8924TH
(see Figs 9 and 10)
BOM
ITEM
QUANTITY
U1
TDA8924TH
cinch inputs
Farnell 152-396
output connector
Augat 5KEV-02
supply connector
Augat 5KEV-03
L5 and L6
10 H
BEAD
Murata BL01RN1-A62
S1
PCB switch
Z1
5V6
C1 and C2
470 F; 35 V
Panasonic M series
ECA1VM471
10
C3, C4 and C5
47 F; 63 V
11
470 nF; 63 V
12
220 nF; 63 V
SMD 1206
13
10
100 nF; 50 V
SMD 0805
14
330 pF; 50 V
SMD 0805
15
15 nF; 50 V
SMD 0805
16
C24, C25
SMD 0805
17
C33
47 pF; 25V
SMD 0805
18
R3 and R4
39 k; 0.1 W
SMD 0805
19
R5
30 k; 0.1 W
SMD 1206
20
R1
10 k; 0.1 W; optional
SMD 0805
21
R2
SMD 0805
22
5.6 k; 0.1 W
SMD 0805
23
22 ; 1 W
SMD 2512
24
4.7 ; 0.25 W
SMD 1206
25
1 F; 63V
MKT
26
heatsink
27
printed-circuit board
material
REFERENCE
PART
DESCRIPTION
Note
1. EP13 or 16RHBP inductors have been used in the first demo boards. In these boards, they functioned properly.
However current rating basically is too low. A better choice is the new TOKO DASM 998AM-105 inductor.
2003 Jul 28
21
Philips Semiconductors
Objective specification
TDA8924
MDB541
102
handbook, halfpage
MDB542
102
handbook, halfpage
THD + N
(%)
THD + N
(%)
10
10
101
101
(1)
(1)
(2)
(2)
102
103
102
102
(3)
101
10
102
Po (W)
103
103
10
103
104
105
fi (Hz)
2 2 SE; VP = 24 V.
(1) fi = 10 kHz.
(2) fi = 1 kHz.
2 2 SE; VP = 24 V.
(1) Po = 10 W.
(2) Po = 1 W.
2003 Jul 28
102
22
Philips Semiconductors
Objective specification
TDA8924
MDB543
102
handbook, halfpage
MDB544
102
handbook, halfpage
THD + N
(%)
THD + N
(%)
10
10
101
101
(1)
(1)
(2)
(2)
102
102
(3)
103
102
101
10
102
Po (W)
103
103
10
102
103
104
105
fi (Hz)
1 4 BTL; VP = 24 V.
(1) fi = 10 kHz.
1 4 BTL; VP = 24 V.
(1) Po = 10 W.
(2) Po = 1 W.
(2) fi = 1 kHz.
(3) fi = 100 Hz.
MDB546
50
MDB548
60
handbook, halfpage
handbook, halfpage
Pdiss
(1)
(W)
40
Pdiss
(2)
(W)
(1)
(2)
(3)
40
30
(4)
(3)
20
20
10
0
102
101
10
0
102
102
103
Po (W)
VP = 25 V.
VP = 24 V.
(3)
(4)
VP = 22 V.
VP = 20 V.
2003 Jul 28
10
102
103
Po (W)
1 4 BTL.
(1) VP = 25 V.
(2) VP = 24 V.
(3) VP = 20 V.
101
23
Philips Semiconductors
Objective specification
TDA8924
MDB547
100
handbook, halfpage
(%)
80
(1)
(2)
(3)
(%)
80
60
60
40
40
20
20
0
0
50
100
Po (W)
150
VP = 20 V.
VP = 22 V.
(3)
(4)
100
200
Po (W)
300
1 4 BTL; 2 10 H; 2 1 F.
(1) VP = 20 V.
2 2 SE; 10 H; 1 F.
(1)
(2)
MDB549
100
handbook, halfpage
(1)
(2)
(3)
(4)
VP = 24 V.
VP = 25 V.
(2)
(3)
VP = 24 V.
VP = 25 V.
MDB553
300
handbook, halfpage
MDB552
250
Po
handbook, halfpage
(W)
Po
(W)
200
(1)
250
(1)
200
150
150
(2)
(2)
100
100
50
50
0
0
10
20
30
VDD (V)
10
20
VDD (V)
30
THD + N = 10 %; fi = 1 kHz.
(1) 1 4 BTL.
(2) 2 2 SE.
2003 Jul 28
24
Philips Semiconductors
Objective specification
TDA8924
MDB545
MDB556
45
handbook, halfpage
handbook, halfpage
(dB)
Gv
(dB)
40
cs
20
40
35
(1)
(1)
(2)
60
30
80
(2)
(3)
25
100
20
10
102
103
104
105
10
102
103
104
105
fi (Hz)
fi (Hz)
2 2 SE; VP = 24 V.
(1) Po = 10 W.
(2) Po = 1 W.
MDB549
100
MDB557
45
handbook, halfpage
handbook, halfpage
Gv
(dB)
40
(1)
(2)
(3)
(%)
80
(1)
60
35
40
30
(2)
(3)
20
25
0
0
100
200
Po (W)
20
300
10
103
104
105
fi (Hz)
1 4 BTL; 2 10 H; 2 1 F.
(1) VP = 20 V.
(2) VP = 24 V.
(3) VP = 25 V.
Vi = 100 mV; Rs = 0.
(1) 1 8 BTL; Vp = 15 V.
(2) 2 8 SE; Vp = 20 V.
(3) 2 4 SE; Vp = 15 V.
2003 Jul 28
102
25
Philips Semiconductors
Objective specification
TDA8924
MDB554
120
Iq
MDB555
330
handbook, halfpage
handbook, halfpage
(mA)
100
fclk
(kHz)
320
80
60
310
40
300
20
0
0
10
20
30
VDD (V)
290
40
10
15
20
25
30
35
VDD (V)
RL is open-circuit.
RL is open-circuit.
MDB562
MDB563
handbook, halfpage
handbook, halfpage
SVRR
(dB)
SVRR
(dB)
20
20
40
40
(1)
60
(2)
(1)
60
(2)
(3)
(3)
80
80
100
10
102
103
104
100
105
fi (Hz)
4
5
Vripple(p-p)
2003 Jul 28
26
Philips Semiconductors
Objective specification
TDA8924
MDB550
10
MDB551
10
handbook, halfpage
handbook, halfpage
Vripple(p-p)
(V)
8
Vripple(p-p)
(V)
8
0
102
101
102
10
102
10
103
Po (W)
fi (Hz)
104
MDB559
10
MDB558
10
handbook, halfpage
handbook, halfpage
THD + N
(%)
THD + N
(%)
(1)
101
(1)
101
(2)
(3)
(2)
102
103
100
200
300
400
103
100
500
600
fclk (kHz)
VP = 24 V; Po = 10 W into 2 .
(1) fi = 10 kHz.
(2) fi = 100 Hz.
(3) fi = 1 kHz.
200
300
400
500
600
fclk (kHz)
VP = 24 V; Po = 1 W into 2 .
(1) fi = 10 kHz.
(2) fi = 1 KHz.
(3) fi = 100 Hz.
2003 Jul 28
(3)
102
27
Philips Semiconductors
Objective specification
TDA8924
MDB561
250
Iq
MDB564
1500
handbook, halfpage
handbook, halfpage
(mA)
Vres
(mV)
200
1000
150
100
500
50
0
100
200
300
400
0
100
500
600
fclk (kHz)
200
300
400
500
600
fclk (kHz)
VP = 24 V; RL = open-circuit.
VP = 24 V; RL = 2 .
MDB560
150
MDB565
10
handbook, halfpage
handbook, halfpage
Vo
(V) 1
Po
(W)
101
100
102
103
50
104
105
0
100
106
200
300
400
500
600
fclk (kHz)
6
Vmode (V)
VP = 24 V; RL = 2 ; fi = 1 kHz; THD + N = 10 %.
2003 Jul 28
28
Philips Semiconductors
Objective specification
TDA8924
MDB566
120
S/N
(dB)
100
handbook, halfpage
(1)
80
(2)
60
40
20
0
102
101
10
102
Po (W)
103
2003 Jul 28
29
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+25 V
STABI PROT
VDDA2 VDDA1
10
18
13
VDDP2
VDDP1
23
14
15 BOOT1
RFB
IN1 9
Vin1
RELEASE1
INPUT
STAGE
IN1+ 8
SGND1 11
SGND
PWM
MODULATOR
SWITCH1
CONTROL
AND
ENABLE1 HANDSHAKE
mute
COSC
DRIVER
HIGH
16
OUT1
DRIVER
LOW
STABI
VSSP1
Philips Semiconductors
VDDA
2003 Jul 28
VDDP
VDDA
OSC 7
30
VSSA
ROSC
Vmode
OSCILLATOR
MODE 6
SGND2 2
SGND
MANAGER
IN2 4
TDA8924
VDDP2
MODE
22 BOOT2
ENABLE2
mute
IN2+ 5
Vin2
TEMPERATURE SENSOR
CURRENT PROTECTION
INPUT
STAGE
1
12
VSSA2 VSSA1
PWM
MODULATOR
RFB
CONTROL
SWITCH2
AND
HANDSHAKE
RELEASE2
24
VSSD
SGND
0V
DRIVER
HIGH
21
OUT2
DRIVER
LOW
19
HW
17
VSSP1
20
VSSP2
25 V
VSSA
MDB571
TDA8924
VSSP
Objective specification
VSSA
VSSA
Philips Semiconductors
Objective specification
TDA8924
17 PACKAGE OUTLINE
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
E
D
c
E2
HE
v M A
D1
D2
12
1
pin 1 index
Q
A
A2
E1
(A3)
A4
Lp
detail X
24
13
w M
bp
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A2
max.
3.5
3.5
3.2
A3
0.35
A4(1)
D1
D2
E(2)
E1
E2
HE
Lp
1.1
0.9
11.1
10.9
6.2
5.8
2.9
2.5
14.5
13.9
1.1
0.8
1.7
1.5
bp
D(2)
2.7
2.2
8
0
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
03-02-18
03-07-23
SOT566-3
2003 Jul 28
EUROPEAN
PROJECTION
31
Philips Semiconductors
Objective specification
TDA8924
To overcome these problems the double-wave soldering
method was specifically developed.
18 SOLDERING
18.1
Reflow soldering
18.4
Wave soldering
2003 Jul 28
Manual soldering
32
Philips Semiconductors
Objective specification
TDA8924
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
BGA, LBGA, LFBGA, SQFP, SSOP-T(3), TFBGA, VFBGA
not suitable
suitable(4)
not
suitable
REFLOW(2)
suitable
suitable
suitable
not
recommended(5)(6)
suitable
not
recommended(7)
suitable
Notes
1. For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods.
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
5. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 Jul 28
33
Philips Semiconductors
Objective specification
TDA8924
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
Objective data
II
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
20 DEFINITIONS
21 DISCLAIMERS
2003 Jul 28
34
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
753503/01/pp35
Jul 28