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Chapter 5
Introduction to DC/DC
Converters
Analysis techniques: Average KVL, KCL, P.S.S. Conditions.
KCL
I1
i2
in
ij = 0
34
(5.1)
35
< ij > = 0
(5.2)
KVL
V2
V1
Vn
Vk = 0
(5.3)
< Vk > = 0
(5.4)
36
P.S.S.
To analyze converters in Periodic Steady State (P.S.S.):
X
Average KCL
Average KVL
< ij > = 0
(5.5)
< Vk > = 0
(5.6)
<
diL
>
dt
diL
> = 0
dt
< VL > = 0
<
Capacitor in P.S.S.
(5.7)
dVL
>
dt
dVL
> = 0
dt
< iC > = 0
(5.8)
(5.9)
I1
q(t) = 0
V1
I2
q(t) = 1
C1
Vx
VL
+
C2
V2
dT
T+dT
Vx(t)
t
2T
Duty Ratio d
V1
(V1>0)
<Vx> = dV1
t
dT
T+dT
2T
37
(5.10)
iL (t) IL
(5.11)
(5.12)
Consider currents:
< iC2 > = 0
I1 = I2
(5.13)
(5.14)
Combining:
I1 = dI2
dV1 = V2
dV1 I1 = dI2 V2
V1 I1 = I2 V2
(5.15)
38
+
V1
C1
C2
V2
Type of direct converter because a DC path exists between input and output
in one switch state.
Suppose we change the location of source and load: Rene switching function so
q(t) = 1 when switch is in down position (see Figure 5.5).
Similar analysis:
< VL > = 0
(V1 V2 )(1 d)T + V1 dT = 0
V2 =
1
V1
1d
(5.16)
By conservation of power:
I2 = (1 d)I1
(5.17)
39
q(t)
1
iL
I1
+
+
V2
q(t) = 1
C1
Vx
VL
I2
q(t) = 0
dT
T+dT
2T
dT
T+dT
2T
Vx(t)
V2
C2
+
-
V1
t
VL
V1
dT
V1-V2
+
V2
C1
C2
1. External network
2. Switch implementation
V1
40
3. Control
The boost converter is often drawn with power owing left to right. However,
there is nothing fundamental about this (see Figure 5.7).
+
V1
C2
C1
V2
41
MOSFET can block positive V and can carry positive or negative i (see Figure 5.9).
D
D
Body Diode
G
S
S
i
+
V
Same for
IGBT
42
i
+
We can also construct indirect DC/DC converters. Store energy from input, trans
fer energy to output, never a DC path from input to output (see Figure 5.14).
B
+
V1
V2
43
q(t) = 1
q(t) = 0
+
V1
V2
q(t)
1
t
q(t) = 0
dT
T+dT
2T
q(t) = 1
VL
+
V1
C1
C2
V1
V2
dT
V2
Split Capacitor
d
V1
1d
(5.18)
V2
<0
V1
(5.19)
44
I1
I2
+
V1
V2
V1 > 0
I1 > 0
V2 < 0
I2 > 0
Other indirect converters include CUK and SEPIC variants.
V2
V1
(5.20)
By averaged KCL into dotted box: Maybe counter intuitive: I1 = average tran
sistor current. I1 + I2 = peak transistor current.
45
VC
I1
iq
iq
IL
V2
I1+I2
I1
dT
(5.21)
V1
I2
I1
I2
D
Q
V1
+
I1+I2
V2
Indirect converter:
46
I2
Buck
Q
V1
Boost
Vq
+
D
I1
V2
Vd
+
V1
Vq
V2
(5.22)
IL = iq,max = id,max = I2
(5.23)
VC = Vq,max = Vd,max = V2
(5.24)
IL = iq,max = id,max = I1
(5.25)
Boost:
(5.26)
(5.27)
Device voltage and current stresses are higher for indirect converters than for
direct converters with same power. Inductor current and capacitor voltage are also
higher.
Summary:
For indirect converters (neglecting ripple) (see Figure 5.20):
47
+ VC
I1
I2
iq
+
V1
iL
I1+I2
V2
I1
dT
(5.28)
(5.29)
IL
+
+
V1
Boost
Vq
Vd
IL
+
V2
V1
Vq
V2
(5.30)
(5.31)
48
5.1
Now, selecting lter component sizes does depend on ripple, which we have previously
neglected. Lets see how to approximately calculate ripple components. To eliminate
2nd order eects on capacitor voltage ripple:
1. Assume inductor is (ipp 0).
2. Assume all ripple current goes into capacitor.
Similarly, to eliminate 2nd order eects in inductor current ripple:
1. Assume capacitors are (VC,pp 0).
2. Assume all ripple voltage is across the inductor.
We can verify assumptions afterwards.
Example: Boost Converter Ripple (see Figure 5.22)
I1
id
+
V1
V2
+
id
V2
49
id
Actual Waveform iD Including Ripple
I1
Id=<id>=(1-D)I1
t
DT
~
id
+
~
V
(1D)I1
~
VC
VCpp
2
t
DT
VCpp
2
1
2fsw C
R or V2 is small recpect
to V2 .
Let us calculate the ripple:
dVC
dt
Z DT
1D
=
I1 dt
C
0
(1 D)DT
I1
=
C
i = C
VC,pp
(5.32)
50
(1 D)DT
I1
VC,pp
(5.33)
Vx
Actual Vx Including Ripple
Source Impedance
+
V1
Vx
C1
V2
V2
<Vx>=(1D)V2
t
DT
~
i1
+
~
Vx
(1D)V2
~
i1
ipp
2
t
DT
ipp
2
iL,pp =
(5.34)
51
Therefore, we need:
L
D(1 D)T
V2
ipp
(5.35)
Energy storage is one metric for sizing Ls and Cs. Physical size may actually be
determined by one or more of: energy storage, losses, packing constraints, material
properties. To determine peak energy storage requirements we must consider the
ripple in the waveforms.
Dene ripple ratios (see Figure 5.27):
VC,pp
2VC
iL,pp
=
2I L
RC =
(5.36)
RL
(5.37)
Xpp
2
Xpp
2
(5.38)
iL,pk = IL (1 + RL )
(5.39)
52
(1 D)DT
I1
2RC VC
D(1 D)T
L
V2
2RL I1
C
(5.40)
(5.41)
The ripple ratios also determine passive component energy storage requirements
and semiconductor device stresses.
So lets calculate the required energy storage for the capacitor:
1
CV 2
2 C,pk
1 (1 D)DT
=
I1 VC2 (1 + RC )2
2 2RC VC
DI2 V2 (1 + RC )2
=
RC
4fsw
DPo (1 + RC )2
=
RC
4fsw
EC =
(5.42)
EL =
(1 D)Po (1 + RL )2
RL
4fsw
(5.43)
It can be shown that direct converters always require lower energy storage than
indirect converters.
53
Converter Type
Direct
Indirect
Value
isw,pk , id,pk
Vsw,pk , Vd,pk
isw,pk , id,pk
Vsw,pk , Vd,pk
L, C
max(|I1 |, |I2 |)
max(|V1 |, |V2 |)
|I1 |, |I2 |
|V1 |, |V2 |
Finite L, C
max(|I1 |, |I2 |)(1 + RL )
max(|V1 |, |V2 |)(1 + RC )
(|I1 |, |I2 |)(1 + RL )
(|V1 |, |V2 |)(1 + RC )
.
Switch Stress P arameter(SSP ) = Vsw,pk isw,pk
(5.44)
5.2
(5.45)
54
q(t)
Switching Function for Diode
qD(t)
I1
VL
L
V1
R
q(t)
DT
V1
t
V2
DT
V1V2
iL
I1
t
DT
V1 DT
L
(5.46)
IL = I1
=
RL =
V2
R(1 D)
(5.47)
iL,pp
2
I1
V1 D(1 D)RT
=
2V2 L
D(1 D)2 RT
=
2L
RL as R , L
(5.48)
(5.49)
iL
55
iL
As R Increases
As L Decreases
t
DT
DT
D(1 D)2 RT
2L
RL > 1
R
2L
D(1 D)2 T
(5.50)
At light load (big R and low power) we get DCM. Lighter load can be reached in
CCM for larger L. DCM occurs for:
L
D(1 D)2 T R
2
(5.51)
The minimum inductance for CCM operation is sometimes called the critical
inductance.
LCRIT,BOOST =
D(1 D)2 T R
2
(5.52)
For some cases (e.g. we need to operate down to almost no load), this may be
unreasonably large.
Because of the new switch state, operating conditions are dierent (see Fig
ure 5.30).
56
q(t), qD(t)
DCM
t
VL
DT
(D+D2)T
V1
(D+D2)T
DT
t
T
V1-V2
iL
t
DT
(D+D2)T
(5.53)
57
1D+D
1D
D
= 1+
1D
Since
V2
V1
=1+
D
D2
and D2 < 1 D,
V2
V1
(5.54)
is bigger in DCM.
1 1
2D2 RT
V2
= +
1+
V1
2 2
L
(5.55)
Therefore, conversion ratio depends on R, fsw , L, ... unlike CCM. This makes
control tricky, as all of our characteristics change for part of the load range.
How do we model DCM operation? Consider diode current (see Figure 5.31).
IL
id
+
V1
V2
+
id(t)
V2
id
ipk
I2
t
DT
(D+D2)T
ipk =
V1 DT
L
D2 T = t
58
= L
= L
D2
i
V
V1 DT
L
V2 V1
V1 D
=
V2 V1
(5.56)
(5.57)
V2
V1
Vx
V2
V1
t
DT
D2T
Sometimes people design to always be in DCM. Inductor size becomes very small
and we can get fast
di
dt
CCM
59
DCM
Desired i
V2
1. Very fast
di
dt
capability.
1. Parasitic ringing
2. High peak and RMS currents
3. Need additional lters
DCM is sometimes used when very fast response speed is needed (e.g. for voltage
regulator modules in microprocessors), especially if means are available to cancel
ripple (e.g. interleaving of multiple converters). In many other circumstances DCM
is avoided, though one may have to operate in DCM under light-load conditions to
keep component sizes acceptable.