PD - 91437B

IRF9540N
HEXFET Power MOSFET
l
l
l
l
l
l

Advanced Process Technology

Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

VDSS = -100V
RDS(on) = 0.117

ID = -23A

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

-23
-16
-76
140
0.91
20
430
-11
14
-5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

1.1

62

C/W

5/13/98

IRF9540N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
-100

-2.0
5.3

Typ.

-0.11

15
67
51
51

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

1300
400
240

V(BR)DSS
V(BR)DSS/TJ

IGSS

Max. Units
Conditions

V
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA
0.117

VGS = -10V, ID = -11A

-4.0
V
VDS = V GS, ID = -250A

S
VDS = -50V, ID = -11A
-25
VDS = -100V, VGS = 0V
A
-250
VDS = -80V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
97
ID = -11A
15
nC
VDS = -80V
51
VGS = -10V, See Fig. 6 and 13

VDD = -50V

ID = -11A
ns

RG = 5.1

RD = 4.2, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

pF
VDS = -25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
trr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
-23
showing the
A
G
integral reverse
-76
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -11A, VGS = 0V
150 220
ns
TJ = 25C, IF = -11A
830 1200 nC
di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting TJ = 25C, L = 7.1mH

RG = 25, IAS = -11A. (See Figure 12)

ISD -11A, di/dt -470A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 300s; duty cycle 2%.

IRF9540N
100

100

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP

-ID , Drain-to-Source Current (A )

-ID , D rain-to-S ou rc e C urre nt (A )

TO P

10

-4 .5V

2 0 s P U LS E W ID TH
T Jc = 2 5C
A

1
0.1

10

10

-4 .5V
2 0 s P U LS E W ID TH
T JC = 1 75 C

100

0.1

-VD S , D rain-to-S ourc e V oltage (V )

Fig 2. Typical Output Characteristics

2.5

R D S (on) , Drain-to-S ource O n Resistance

(N orm alized)

-I D , D rain-to -So urc e C urre nt (A )

100

TJ = 25 C
TJ = 1 7 5C
10

V DS = -2 5 V
2 0 s P U L S E W ID TH
4

-VG S , Ga te -to-Source Volta ge (V)

Fig 3. Typical Transfer Characteristics

100

-VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

0.1

10

10

I D = -19 A

2.0

1.5

1.0

0.5

VG S = -1 0V

0.0
-60

-40

-20

20

40

60

80

100 120 140 160 180

T J , Junction T em perature (C )

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9540N
V GS
C is s
C rs s
C o ss

C , Capacitance (pF)

2500

2000

=
=
=
=

20

0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd

-V G S , G ate-to-S ource V oltage (V )

3000

C iss

1500

C oss
1000

C rss
500

0
10

V D S = -80 V
V D S = -50 V
V D S = -20 V

16

12

FO R TE S T CIR C U IT
S E E FIG U R E 1 3

A
1

I D = -1 1A

100

-VD S , D rain-to-S ourc e V oltage (V )

40

60

80

100

Q G , Total G ate C harge (nC )

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

1000

O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)

-I D , D rain C urrent (A )

-I S D , Reverse D rain Current (A )

20

10

T J = 17 5C
T J = 2 5C

V G S = 0V

0.1
0.2

0.4

0.6

0.8

1.0

1.2

1.4

-VS D , S ourc e-to-D rain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

1.6

100

10 0s
10
1m s

T C = 25 C
T J = 17 5C
S ing le P u lse

1
1

10m s

A
10

100

1000

-VD S , D rain-to-S ourc e V oltage (V )

Fig 8. Maximum Safe Operating Area

IRF9540N
RD

VDS
25

VGS

D.U.T.

RG

I D , Drain Current (A)

20

VDD

-10V
Pulse Width 1 s
Duty Factor 0.1 %

15

Fig 10a. Switching Time Test Circuit

10

td(on)

tr

t d(off)

tf

VGS
10%

0
25

50

75

100

125

150

175

TC , Case Temperature ( C)

90%
VDS

Fig 10b. Switching Time Waveforms

Fig 9. Maximum Drain Current Vs.

Case Temperature

Thermal Response (Z thJC )

10

1
D = 0.50
0.20
P DM

0.10
0.1

0.01
0.00001

0.05
0.02
0.01

t1
t2

SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9540N
L

VDS

D .U .T

RG

-2 0 V
tp

VD D
A

IA S

D R IV E R
0 .0 1

15V

Fig 12a. Unclamped Inductive Test Circuit

IAS

E A S , S ingle Pulse Avalanc he E nergy (m J)

1200

TOP
1000

B O T TO M

ID
-4 .7A
-8 .1A
-11 A

800

600

400

200

A
25

50

75

100

125

150

175

S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

-10V
QGS

QGD

D.U.T.

+VDS

VGS

VG

-3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

IRF9540N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

RG
VGS

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

D=

Period

P.W.
Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

[ ISD ]

IRF9540N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

2.87 (.11 3)
2.62 (.10 3)

10 .54 (.4 15)

10 .29 (.4 05)

3 .7 8 (.149 )
3 .5 4 (.139 )
-A -

-B 4.69 ( .18 5 )
4.20 ( .16 5 )

1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.25 5)
6.10 (.24 0)

4
1 5.24 (.60 0)
1 4.84 (.58 4)

1.15 (.04 5)
M IN
1

1 4.09 (.55 5)
1 3.47 (.53 0)

4.06 (.16 0)
3.55 (.14 0)

3X
3X

L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN

1 .4 0 (.0 55 )
1 .1 5 (.0 45 )

0.93 (.03 7)
0.69 (.02 7)

0 .3 6 (.01 4)

3X
M

B A M

0.55 (.02 2)
0.46 (.01 8)

2 .92 (.11 5)
2 .64 (.10 4)

2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H

3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
: IS
TH IS A
ISN AIR
N F IR
E X AEMXPA LMEP :L ETH
1 0F1
1 00 1 0
W ITAHS SAESMS BE LMYB L Y
W ITH
C EO D9EB 1M
9B1M
L O TL OCTO D

INRTE
A TIO
IN TE
N ARTNIO
N A LN A L
R
E
C
TIF
R E C TIFIE R IE R
10 1 0
IR F IR
1 0F10
L O GL O G O
9 2 4962 4 6
9B 9B1 M 1 M
A S SAESMSBE LMYB L Y
C EO D E
L OTL O TC O D

NB
U EMRB E R
P A RPTA RNTU M

D A TE
D A TE
C O DC EO D E
(Y
Y
W
(Y Y W W ) W )
Y Y Y=Y Y=E AYRE A R
W WW =W W= EW
E KE E K

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/