1-3

2-3

3-3

4-3

5-3

6-3

7-3

8-3

 1-3


.
.
.
) (Photovoltaic Cells
.
.
.
30% .
) (1-3
.

.

. ) (2-3
1976 . 1992

.

) /(

) :(1-3 1978 1992

) :(2-3
1976 1992
.

.
4.5 2.5 )
8 10( .

1.5
2.5 3.0 12
6 9
.
2-3

) (P ) . (N
)
( . ) (N
) (Phosphore

 . ) (Electrons
) (N ) . (Negative Charge
) (P
) (Boron .
) (Holes
)(P
). (Positive Charge

) . (P-N Junction

.
. ) (Photons
) (P-N Junction
.

.
.
) (Holes .
) (P-N Junction
) (N ) . (P ) (
)( ) (N .

) (N ) . (P
) (N
) . (P
) ( ). (Depletion Region


) (Conduction Band (Valance

) Band ) (
) (N
). (P
) . (3-3

.
). (P

) :(3a-3

) :(3b-3

) :(3c-3 p n

) :(3d-3
) (n
)(p
) (N .



.


.
(P-N

) . Junction ) (0.5V
2.5 1.25 .
.
3-3
100.0
) (0.5V
2.5-3.0 .
) (Photovltaic
. ) (4-3 100
) (R
) .
1000.0 ( .
) ( ) (I ) (V
(Open Circuit voltage Voc) .

(Short Circuit Current

) . Isc
) (5-3 ) . (I-V Curve
) (Maximum Power
(Maximum

) Power Point . 1000

. Ioc
. (I0cT) T

 )(I

)(V

)(R

1000 W m-2 25oC

) :(4-3

) :(5-3

 ) (5-3 100
) ( 3.0

. 12
26
13 12 .
4-3

1-4-3

) (Single Crystal ) .(Impurities


) (Czochralski Process .
). (6-3

.16%

.

.

. (Thin
) Film (Polycrystalline

) Silicon ) (Gallium arsenide

). (Amorphous Silicon

900 Co

1500 C

p-n

) :(6-3

 2-4-3

.
)(Edge-defined, film-fed growth process
) . (Solar Mobile
) (7-3 .

o
1400 C

) :(7-3
3-4-3
) (Polycrystalline Silicon Cells
.

) (8-3
.

 ) :(8-3
) (Polycrystalline Photovollaic Cells
)(Single Crystal Cells

) (

.

.
10%
.
) (
) (Astro power Inc
20
.15%

) (Amorphous Silicon Cells
) . (Thick Polycrystalline Cells 1994
) (Davis 18
312 .

 4-4-3 )(Gallium Arsenide Cell

) (Gallium Arsenide Cell

.


.
.

.
.
)(Sun Racer

1987
3000 66 .
5-3

)(Thin Film Photovollaic Cells

1-5-3 )(Amorphous Silicon Cells

. ) (A-Si
.

) (Dangling Bands .
)(SiH4

) . (Elastic Stainless Steel

 ) (Dangling Silicon Bands

.
.
) (P-N Junction
) (P-I-N
) (P ) (I
) (N .
) (9-3 .

) (Band Gap .

)(SiO2
)(SnO2
p -

n -

) :(9-3

 .


.
.

.
12%
8% 4%
. )( .

.

. ) (Band Gap

. ) (Germanium
.
) (Wide Band Gap



) . (10-3

.

)(SiO2

p -

n -
p -

n -
p -

n -

) :(10-3


. 1990
30% .

) (Thin Films
) (Semiconductor ) (CuIn Se2 or CIS
) (CdTe
.

 2-5-3 )(Copper Indium diselenide

) . (CIS
. 12%
) (Simens ) (CIS 30
. 10% 1994
.


.
.

.
3-5-3 )(CdTe

.
.
10% .
.
6-3

.

) (

 .
.
7-3

1-7-3

.
) . (11-3

.

:
-1 .
-2
.
- 3 .

) :(11-3




.
2-7-3



.



.


.
) (12a, b-3 .

) :(12a-3

 ) :(12b-3
3-7-3
.
1988
) (RWF
. 340 250000
.
300
) 1991 . (13a, b-3 )(RWF

1 .
500 ) . (14-3
3.8 20
110
5 4574
. 700 .

 ) :(13a-3 340

) :(13b-3 300

 ) :(14-3 500

300
. 600 ) 1991 . (15-3
3.3 .

) :(15-3 600


) (Arco
1 6.5

.
.
1

300 .
200 400
.
100
. 150
5.5 .
8-3
) 1

= 1000 = 109(
30 .
2.45 250/

1 100
.
) . (16-3
1367 1000
.
.
.
5 15

) :(16-3


.
.
.
.

.

.

.

.