Photolithography

Chng 1: GII THIU CHUNG

I.

POLYMER CM QUANG

1. Gii thiu
Polymer cm quang l nhng loi polymer nhy cm vi cc ngun nh sng.
Ngun quang hc ng rn bc x c th l tia cc tm (UV), nh sng, laser
c quan tm nghin cu trong nhng nm 1990. Nhng k thut ny da trn
nhng phn ng ha hc i hi s kch hot ca cc vng nh sng UV, kh kin, IR,
hay proton. Qu trnh ng rn cng xy ra bng cc chui ht electron, tia X, tia ,
plasma, sng siu m.
Photoresist:

L mt dng c bit ca polymer cm quang, chng c ngdng rng

ri trong lnh vc quang khc, c kh nng to hnh nh ni (relief) trn sn
phm v gip chng li qu trnh khc n mn trn b mt sn phm.
Polymer cm quang ni chung v photoresist ni ring gm c 2 loi: loi
to nh DNG v loi to nh M.
Loi to nh DNG l h gm cc polymer c trng lng phn t ln,
di tc dng ca cc bc x s chuyn sang cc polymer hoc cc
monomer c trng lng phn t thp hn, c kh nng ho tan tt hn trong
dung mi thch hp. Hay polymer ban u (c cha cc nhm chc nhy
quang) l loi kh ho tan, di tc dng ca bc x s hiu chnh nhm chc
tan d hn.
Loi to nh M l cc h m ban u gm l h d ho tan, sau chuyn
sang dng kh ho tan do thc hin cc phn ng quang polyme ho to mng
ngang hay c hiu chnh nhm chc.
2. ng dng
Polymer cm quang c s dng ch yu trong lnh vc sn, mng ph,
vecni trn cc nn g, kim loi, nha,.. Ngoi ra cn c s dng rt nhiu
trong ngnh cng nghip hnh nh, cng ngh in n, in t.

Photolithography

II.

QUANG KHC:
1. Khi nim: Quang khc hay photolithography l k thut s dng
trong cng ngh bn dn v cng ngh vt liu nhm to ra cc chi tit ca vt
liu v linh kin vi hnh dng v kch thc xc nh bng cch s dng bc
x nh sng lm bin i cc cht cm quang ph trn b mt to ra hnh
nh cn to. Phng php ny c s dng ph bin trong cng nghip bn
dn v vi in t, nhng khng cho php to cc chi tit nh do hn ch ca
nhiu x nh sng, nn c gi l quang khc micro (micro lithography).
2. Nguyn l h quang khc
Mt h quang khc bao gm mt ngun pht tia t ngoi, chm tia t
ngoi ny c khuch i ri sau chiu qua mt mt n (photomask). Mt
n l mt tm chn sng c in trn cc chi tit cn to (che sng)
che khng cho nh sng chiu vo vng cm quang, to ra hnh nh ca chi
tit cn to trn cm quang bin i. Sau khi chiu qua mt n, bng ca
chm sng s c hnh dng ca chi tit cn to, sau n c hi t trn b
mt phin ph cm quang nh mt h thu knh hi t.
Mt n
L mt tm thy tinh c hnh nh. Hnh nh c to bng cch n mn
c chn lc lp crom mng ph (khong 70 nm) trn tm thy tinh to vng
ti v vng sng. Khi chiu nh sng qua ch no khng c crom th cho nh
sng i qua, ch no c crom s cn nh sng.

Cr

Photolithography

Cc giai on c bn to quang khc:

- Chun b b mt
- Sy s b
- Ph photoresist ln
- Chuyn hnh nh t mt n ln photoresist
- Ra, to hnh nh ln photoresist
- n mn lp oxit bn di photoresist v tch lp photoresist

3. ng dng ca quang khc

Quang khc c s dng rng ri nht trong cng nghip bn dn ch
to cc vi mch in t. Ngoi ra, quang khc c s dng trong ngnh khoa
hc v cng ngh vt liu ch to cc chi tit vt liu nh, ch to cc linh
kin vi c in t (MEMS). Hn ch ca quang khc l do nh sng b nhiu x
nn khng th hi t chm sng xung kch c qu nh, v th nn khng th
ch to cc chi tit c kch thc nano ( phn gii ca thit b quang khc tt
nht l 50 nm), do khi ch to cc chi tit nh cp nanomet, ngi ta phi
thay bng cng ngh quang khc chm in t (electron beam lithography).

Photolithography

III.

QUI TRNH
1. Chun b b mt:
Tch tp cht trn b mt wafer:
Phng php:
- Thi kh nit c p sut cao
- V sinh bng ha cht
- Dng nc c p sut cao
- Dng c ra
Sy tch m
Trn b mt cc wafer thng c m do cn phi loi b bng cch gia
nhit khong 150~200oC
Ph lp primer:
Mc ch: lm tng kh nng kt dnh gia wafer v photoresist.
Primer thng s dng l HMDS (hexamethyldislazane)
2. Ph photoresist - Coating (Spin Casting)
giai on ny nn c quay trn spinner trong mi trng chn khng.
Cc thng s kim sot trong giai on ny:
- Tc 3000-6000 vng/pht
- Thi gian quay: 15-30 giy
-

dy lp ph: 0.5-15m
Cng thc thc nghim tnh dy lp ph photoresist
t

kp 2
w

vi k: hng s ca thit b quay spinner (80-100)

p: hm lng cht rn trong resist (%)
w: tc quay ca spinner (vng/1000)

Photolithography
Ph lp photoresit

Cc s c thng gp trong qu trnh ph lp photoresist:

S c
dy khng u

Xut hin cc ng sc

Nguyn nhn
Hng khc phc
b mt kh khng u
C th t 1 vng trn
cc ng bin dy hn (c ng bin.
th dy hn 20-30 ln)
Dng dung mi phun ln
lp bin hon tan
Do trong resist c cc ht
rn c ng knh ln hn
dy lp ph.

Dy ng bin

ng sc trn b mt

3. Sy s b Pre-Baking (Soft-Baking)
Mc ch: lm bay hi dung mi c trong photoresist. Trong qu trnh sy
dy lp ph s gim khong 25%.
Phng php thc hin:
a. Dng l i lu nhit
iu kin:
- nhit : 90-100oC
- thi gian: 20 pht
b. Dng tm gia nhit
- nhit : 75-85oC
- thi gian: 45 giy
c. Dng sng viba v n hng ngoi.
4. Chiu (exposure)
Trong giai on ny, h s c chiu nh sng chuyn hnh nh ln nn,
mt n c t gia h thu knh v nn.
C 3 phng php chiu da vo v tr t mt n:
- mt n tip xc
- mt n t cch photoresist khong cch nh

Photolithography

mt n t cch xa photoresist, nh sng c chiu qua h thu knh.

Hnh nh thu nh 1:4 n 1:10.

So snh 3 phng php:

Phng php
Mt n tip xc

u im
Gi c hp l
phn gii cao: 0.5 m

Mt n t cch Gi c hp l
photoresist khong phn gii thp: 1-2 m
cch nh
Mt n t cch xa phn gii rt cao: < 0.07 m)
photoresist
Khng gy h hng mt n

So snh cc h quang khc:

Khuyt im
Lm h mt n do lp oxit trn
mt n b xt.
Cc vt bn trn mt n s in
ln phototresit
Do nh hng ca nhiu x nn
hn ch chnh xc ca hnh
nh.
lp li ca hnh nh km
Gi thnh cao
B nh hng ca nhiu x

Photolithography

5. Trng ra (development)
Dng ha cht tch cc photoresist cha ng rn.
i vi photoresist m:
- cht ra: xylen
- cht sc li: n-butylacetate
i vi photoresist dng:
- cht ra: (NaOH, KOH), nonionic soln (TMAH)
- cht sc li: nc
- T l ha tan ca vng chiu v vng khng c chiu l 4:1. Do
photoresist dng nhy hn photoresist m.
Thng s kim sot trong qu trnh ra: nhit ra, thi gian ra, phng
php ra, cht ra.

Photolithography

Underexposur
e
Overexposur
e
Phng php ra:
- phng php nhng: a trc tip dung dch ra
- phng php phun

6. Sy kh Post-Baking (Hard-Baking)
Mc ch: lm cho photoresist cng hon ton, ng thi tch ton b dung
mi ra khi resist.
iu kin sy:
- nhit : 49-54oC
- thi gian: 30 pht
7. n mn Etching
C hai loi n mn:
-

n mn t : s dng i vi chi tit c phn gii > 3m

n mn kh : s dng i vi chi tit c phn gii < 3m

n mn t
L phng php n gin nht v kinh t nht ha tan cc resist cha
ng rn. Phng php ny c s dng nhiu nht trong vic sn xut mn
hnh TFT LCD, v cng sut to ra ln hn phng php n mn kh.
Dng c bao gm:
- 1 thng cha ha cht ha tan resist cha ng rn
- 1 mt n. Mt n ny c tc dng gi hnh nh ng theo yu cu. Mt
khng tan trong dung mi hoc tan chm hn rt nhiu so vi phn resist
cha ng rn
Nhc im ca phng php:
- n mn u khng c nh hng nn d n mn vo lp oxit bn di
lp photoresist. Do to hnh nh khng ng vi yu cu

Photolithography

Ha cht s dng ch yu l cc acid nn phi quan tm n tc ng

n mi trng.

n mn kh
u im:
- n mn c nh hng
C th chia thnh cc loi sau:
-

Dng ion hot ha (RIE): c 1 dng kh c a vo bung t pha trn

v c ht ra di y bng bm. Kh s dng ty thuc vo tnh cht
ca photoresist. Nhng kh ny c s dng to ra plasma bng
ngun in c tn s radio 13.56 MHz v vi trm wat. Plasma c to
thnh khi kh b ion ha. Khi , vng kp wafer bt u tch in m, trong
khi kh tch in dng. S khc bit v in th lm cho ion kh di chuyn
n vng kp v nguyn liu v xy ra phn ng ha hc. Cc ion dng
cng gy n mn. Phn n mn ha hc to ra s n mn ng hng
cn n mn t nhin s c tc dng n mn c nh hng. Cc thng s
cn kim sot trong phng php ny l: p sut sut, lu lng kh v
cng sut RF.

Hnh 4: Cu to bun RIE

Dng hi n mn. Tuy nhin phng php ny ch dng n mn

silic. Phng php ny tng t nh phng php dng ion, khc bit
duy nht l cc ion khng phn ng vi nguyn liu c n mn.

Photolithography

8. Tch lp photoresist Stripping

Mn hnh LCD c ra v sy kh. Dng dung dch kim hoc kh ha tan
photoresist v dng mt lp khc chuyn hnh nh ln mn hnh.
a. Dng ha cht tch photoresist:
- S dng ha cht nng ha tan photoresist
- Cc ha cht thng s dng: acid sulfuric, acid phosphoric v hydrogen
peroxide
u im: tch photoresist nhanh
Nhc im: gi thnh ha cht cao, tc ng n mi trng
b. Phng php kh (dng kh)
Phng php ny khng c hi do s dng kh oxy plasma oxy ha hon
ton photoresist nn cn c gi l tro ha photoresist. Lng kh to thnh
s c tch bng bm chn khng.
CxHy (resist) + O2 CO + CO2 + H2O
Phng php tt nht l s dng hi isopropyl alcohol c tinh khit
>70% c gia nhit t 80-100 oC. Khi tch photoresit c tch ra v to b
mt sch.

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Photolithography

CHNG 2: MEMS (Micro-Electro Mechanical System)

I.

GII THIU:
MEMS l s tch hp ca cc yu t c (mechanical elements), cm bin
(sensors), b kch hot (actuators) v cc yu t in chung (electronics) trn
mt nn Silicon (Substrate) bng cng ngh vi ch to (micro-fabrication tech).
Trong khi nhng thnh phn c thuc tnh in t (electronics) c ch
to dng cng ngh mch tch hp (IC) nh: CMOS, bipolar, BICMOS, th nhng
thnh phn vi c (micro-mechanical components) c ch to dng qu trnh vi
c (micro-machining) ph hp l ct i c chn la nhng phn wafer Si
hoc thm vo nhng lp c cu trc mi to nn cc thit b c v c in.
Vi c in t: l mt cng ngh pht sinh t cng ngh bn dn vi mch.
M, Cng ngh vi c in t vit tt l MEMS vit tt t danh t Micro
Electron Mechanical Systems, u chu v Nht Bn gi l MST (Micro
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Photolithography

System Technology). Vi c in t (MEMS) da trn phng php gia

cng c hc ca vt liu bn dn (micro-machining) . Vi c in t gia
cng linh kin c ln t mm n micromet, cng ngh k tip pht trin
t cng ngh vi c in t l cng ngh siu vi c in t gi l NEMS.
Da trn cc quy trnh v vt liu IC truyn thng:
- Bn in quang, oxit ho nhit, khuch tn cht pha, cy ion, LPCVD (Low
Pressure Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical
Vapor Deposition), s lm bay hi, khc, khc t, khc plasma, khc ion phn
ng.
- Si, SiO2, SiN, Al
II.
CNG NGH CH TO VI C
Ngoi ra, cc quy trnh v vt liu b sung c s dng trong MEMS:
- Khc t khng ng hng ca Si n tinh th, khc ion phn ng su
(DRIE Deep Reactive Ion Etching), in quang dng tia X, m in, mng mng
LPCVD lc nh, mt n phim dy, khun xoay, khun c cng ngh micro, ni
kt micro khi.
- Phim hng s p in (v d PZT), phim t (v d Ni, Fe, Co), vt liu nhit
cao (v d SiC v s), nhm, thp khng g, platinum, vng, ming thy tinh,
plastic (v d PVC v PDMS).
Vi nhng vt liu v quy trnh ny, k thut in quang l quy trnh n
quan trng nht cho php to ra ICs v MEMS c kch thc vi m ng
tin cy vi th tch b.
Cc cng on chnh ca cng ngh MEMS
1. Khc: cng ngh MEMS thng c thc hin trn bn dn
gi l wafer bn dn.
2. Lm kh wafer.
3. In Vi mch: to mch trn hai mt wafer.
4. Khc theo mt hng.
5. Dn cc wafer li.
Cc phng php gia cng da trn vt liu bn dn v cht n mn, vt
liu bn dn thng dng nht l Silic. Yu cu l silic phi tinh khit.
Phn ng n mn ca ho cht trn Si thay i theo tng mt, v khc
nhau mi loi vt liu.
n mn n hng (anisotropic)
n mn nhiu hng (isotropic).
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Photolithography

gia tng hng n mn trong n mn n hng, ta dng phng

php n mn bng ion hot tnh (Reactive Ion Etching). thnh n mn
thng ng c th dng hai loi ion, mt loi n mn b y v mt loi
bo v cho thnh, cch n mn ny c thc hin trong mi trng kh
nn gi l Khc kh (dry etch).
Trong khi , KOH hay TMAS cng c th n mn Si theo nhiu hng
khc nhau to ra thnh nghing, thc hin cch n mn ny trong dung
mi t nn gi l Khc t.
thc hin khc ti v tr mong mun, wafer cn c che bng cc
mt n khc nhau, gi l vt liu che.
Cht cm quang c hai nhim v l to khng gian b khc v gi li
khng gian khng b khc. Cht cm quang ny khng b tc dng bi vt
liu n mn. Vt liu cm quang gi l photoresist.
Phng php khc dng vt liu cm quang vi nh sng gi l quang
khc (photolithgraphy).
Trong qu trnh quang khc, Si c trng bng my trng quay
(spinner), sau c sy lm mt dung mi, qua cng on chiu
nh sng, in vi mch ln bn dn. V vt liu cm quang ch cm c
di sng t ngoi nn my in vi mch s dng nh sng tm, trong n
chiu nh sng tm c cc loi khc nhau.
Phng php khc kh s dng ion hot tnh c khn nng cho ra nhng
mu rt cao, rt nh gi l high aspect ratio (l t l gia ng knh vi
chiu su)

Cng ngh quang khc trong in t

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Photolithography

Cc ng dng
Cng ngh sn xut compact disc
Cng ngh cp quang
Cng ngh LCDs
Cng ngh chip in t
Cng ngh sn xut compact disc

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Photolithography

Mt s ch thch cho cng ngh compact disc

Cht cm quang l nha c ngun gc phenolic
(novolac/diazanaphthoquinone)
H positive photoresist, khi c qu trnh quang, sinh ra indene carboxylic
acids, thc y qu trnh ha tan phenolic resin trong dung mi kim.

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