Professional Documents
Culture Documents
Basikes Eksisoseis Hlektronikhs II-2015
Basikes Eksisoseis Hlektronikhs II-2015
N-MOS
V : Early ,
2015
r rbe
re rd )
VT = kT/q :
():
:
AM = g m
RD // RL
1 + g m Rsig
Ao = 1 + ( g m + g mb )r0
RL
AM = Ao
RL + r0 + Ao Rsig
RG
r0 // RL
gm
. : AM =
RG + Rsig
1 + g m ( r0 // RL )
. . :
RL = RL // r0 //(1 / g mb )
AM = g m RL /(1 + g m RL )
. . :
rx r (r+rx).
. : AM
:
= g m1 ( r01 // r02 )
r
RL
(1 + g m r0 )
r + Re
RL + (1 + g m ( Re // r ))r0
: rin = rx + (+1) (re + R //RL )
A (RE // RL) / [ re + (RE // RL) ]
AM =
. . : RE r0 .
MOS
BJT
:
:
:
, :
n :
nL =
n :
nH = o 21 n 1 . n fj, j = 1,., n: f nH
1n
. n fLj , j = 1,., n :
1 .1
:
( ):
1
1
1
1
+ 2 + ..... + 2
2
fH1 fH 2
f Hn
( ):
MOS :
CC t < Z , P2
:
:
:
:
:
:
R2:
(Barkhausen):
Wien:
LC:
Colpitts:
Hartley:
555:
555: