Chng V

NGUYN T KHNG CHUYN TIP

I.

I CNG V CC NGUYN T
KHNG CHUYN TIP

II.

CC NGUYN T CHU K I V II

III. CC NGUYN T CHU K

III V CC CHU K TIP THEO

I. I CNG V CC NGUYN
T KHNG CHUYN TIP
1. Cu to nguyn t v c im lin kt
2. Quy lut bin i tnh cht
a. Trong mt phn nhm
b. Trong mt chu k

1. Cu to nguyn t v c im lk
Ngt khng CT: ngt h s v p. To 8 PNC.
AO HT v e HT: lp v ngoi cng. Cc ngt
cng PN c e HT = nhau v = STT nhm.
KN to lk cht ca ngt khng CT ph thuc
vo s orbital ha tr / s e ha tr ca ngt.
lk p-p: ngt chu k II
lk p-d: ngt cc ck di (km c trg dn).
S oxi ho ca cc ngt khng chuyn tip.

Kh nng to lin kt cng ha tr

S e HT= s AO HT: lk c to thnh t cc
, V d C.
S e HT < s AO HT: lk c to thnh t
cc v cc AO trng. V d: Li, Be, B:
nguyn t sm.
S e HT > s AO HT: lk c to thnh t
cc v cc . V d: N, O, F: ngt mun.
cc chu k di, AO nd c th tr thnh
AO HT cc ngt cui chu k vn mang
c tnh lk ca cc ngt sm cc ngt chu
k II khc nhiu so vi cc ngt chu k di.

a. Quy lut bin i t/c trong mt PN

Tnh kim loi tng dn.
Cc h.cht bc 2: tnh axit HX .
Khuynh hng to phc oxo (O2-) , phc
hydroxo (OH-) , ph hp vi s bn
ca lk p-p v p-d v SPT ca ngt t.tm.
V d: Chu k III
Chu k V

H3PO4

H2SO4

HClO4

Sb(OH)5 Te(OH)6 H5IO6

bn ca s OXH (+) max dn (tun

hon th cp). Quy lut ny th hin cc
ngt mun r rng hn cc ngt sm.

b. Quy lut bin i t/c trong 1 c.k

Tnh kim loi gim dn, tnh phi kim tng dn
bn ca cc s OXH cao nht gim dn
(do Ens np kh nng tham gia lin kt
ca cc electron ns).

II. CC NGUYN T CHU K I V II

1. Hydro
2. Cc nguyn t chu k II

1. Hydro
Ch c 1e khng b chn lc ht hn e
ln, mc d Z = 1
H c xp vo c nhm IA v VIIA
H+ proton r rt nh tc dng phn cc
rt ln lk gia H+ v cc ngt khc ch c
th l cht phn cc mnh, khng l ion.
Vi cc ngt c m in mnh (F, O, N) H
c kh nng to lin kt Hydro.
H c kch thc nh v xu hng nhng e
ging KL nn d xm nhp vo mng tinh th
ca KL to thnh nhng hp cht c lk KL.

Xp vo phn nhm IA v VIIA

Xp vo IA v:
C 1e lp ngoi cng
C s oxi ha +1
C th th cc KL ha tr I trong cc mui.

Xp vo VIIA v:
Thiu 1e lp ngoi cng
Th hin s oxi ha -1.
Qu trnh: H + 1e H-, H = -17kcal/mol
L cht kh iu kin thng
Phn t c 2 nguyn t ging halogen.

2. Cc nguyn t chu k II
cc ngt CK II khc rt nhiu so vi cc CK cn li v:

r min, max ht e nhiu nht.

Cc ngt chu k II c tnh tun hon cho

V d:

6Li+ + N2 2Li3N
4Mg2+ + 3N2 2Mg3N2

tan ca mui Li ging ca mui Mg hn so vi KLK

Al v Be c th oxi ha gn bng nhau:

Be2+/Be 0 = 1,85V
Al3+/Al

0 = 1,66V

V nguyn tc c hai KL ny u c th tc dng vi cc

axit khng c tnh oxi ha. Thc t phn ng kh chm v
trn b mt c to mt lp oxit tng i bn.

Modern Periodic Table

III. CC NGUYN T CHU K III

V CC CHU K TIP THEO
1. Kh nng to lin kt

2. S to thnh lin kt

3. Tnh tun hon th cp

1. Kh nng to lk v ca orb d
S phi tr c th l 4, 5, 6, 7, 8, 9
Orbital d cn c th to lk :
LK trong P = O rt bn:E = 500 600 kJ/mol
LK trong N = O

E = 200 300 kJ/mol

V mc nng lng ca orbital d tng i

cao nn kh tham gia vo lin kt. Lin kt
ca orbital d ch c trng vi P, cn li
khng c trng.

2. S to thnh lk ca cc orbital p
Lk p-p ch bn khi hnh thnh gia cc ngt chu k II:
C = C, O = O, N N, C = O, N = O.
i vi cc ngt chu k III: C = Si, Si = Si, lk p-p
km bn v:
Bn knh ngt ln khong cch gia hai ht nhn xa
hn kh nng xen ph p p km hn.
S hnh thnh cc lk khc do s tham gia ca orbital d
thun li hn

V d:
CO2 : monomer: O = C = O, lin kt i
SiO2 :polimer: gm cc t din dng chung tt c cc
nh, lin kt n
Vi P c lin kt HC P (iu ch c nm 1961) l
cht kh, chy nhit thng.
HCN l cht kh, bn.

3. Tnh tun hon th cp

BironE.V. 1915 : cc tnh cht thay i mt
cch khng n iu m thng c s thay
i dc, thm ch c s thay i ngc
vi quy lut bin thin thng thng mt
s nguyn t.
S bt thng xy ra chu k IV, sau l
chu k VI
Tnh cht tun hon th cp cng th hin
r cc phn nhm c nhiu electron.
phn nhm chnh r hn phn nhm ph.

V d: tnh tun hon th cp

V d: Nng lng ion ha I = I1 + I2 + I3 + I4
(eV), bn knh r () v m in Pauling
(eV) ca cc nguyn t nhm IVA:
C
Si
Ge Sn Pb
I (eV) 148 103
105 92 95
(eV) 2,55 1,90 2,01 1,96 2,33
R () 0,77 1,17 1,22 1,40 1,75
Nng lng t gy lin kt (kJ/mol):
F
Cl
Br
I
Si
580 380 310 230
Ge 452 354 275 218

Nguyn nhn ca tnh tun hon th cp

S sp xp e vo cc phn lp (n - 1)d v (n - 2)f
lc ht ca ht nhn i vi e ha tr
hiu ng chn in tch ht nhn hiu dng Z.

Tnh i xng ca cc AO d, f ns nn khi sp xp

e vo (n - 1)d v (n - 2)f hiu ng xm nhp v Z
cc e ns li b ht nhn ht mnh hn.
Hiu ng xm nhp ca cc e ns > np > nd.
Ht nhn ht e 4s2 > 5s2 v cc AO 3d c tnh i
xng khc hn vi cc AO c trc tc
dng chn ca 3d i vi 4s khng cao.
c bit, khi e c in vo 4f v 5d Z
cc e 6s2 b hn ht rt cht, to thnh cp e tr
bn ca s OXH (+) max dn t trn xung v
c bit km bn cc nguyn t p chu k IV v VI.

Electronegativity

Trong mt phn nhm chnh

s lp e hiu ng chn r