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Logic
1
EE141
Pass-Transistor Logic
Inputs
B
Switch
Out
A
Out
Network
B
B
N transistors
No static consumption
Primary inputs drive the gate terminals + source-drain terminals. In contrast to static CMOS
primary inputs drive gate terminals.
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EE141
A
B
F = AB
0
NMOS is effective at passing a 0, but poor at pulling a node to Vdd. When the pass transistor a
node high, the output only charges up to Vdd-Vtn. This becomes worse due to the body effect.
The node will be charged up to Vdd Vtn (Vs)
Vs = Vdd (Vtn0 + ( 2 f + Vs 2 f ))
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EE141
NMOS-Only Logic
3.0
In
s
0.5 m/0.25 m
1.5 m/0.25 m
Out
0.5m/0.25 m
Voltage [V]
VDD
In
2.0
Out
s
1.0
0.0 0
0.5
1.5
Time [ns]
Vs is initially 0. Vs will initially charge up quickly, but the tail end of the transient is slow. The
current drive of the transistor (gate-to-source voltage) is reduce significantly as Vs
approaches Vdd-Vtn (the current available to charge up node s is reduced drastically.
For cascading, the output of a pass transistor (#1) should not drive the gate of another MOS
device (#2). This will produce an output = Vdd-Vtn1-Vtn2
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EE141
Energy Consumption
In
VDD
0.5 m/0.25 m
1.5 m/0.25 m
Out
0.5m/0.25 m
Pass transistors require lower switching energy to charge up a node, due to the reduces
voltage swing. The output node charges from 0 -> Vdd-Vtn, and the energy drawn from the
power supply for charging the output of a pass transistor is given by CL.Vdd(Vdd-Vtn )
While lower switching power is consumed, it may consume static power when output is high
the reduced voltage level may be insufficient to turn off the PMOS transistor of the subsequent
CMOS inverter.
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EE141
Pass-Transistor
Network
(a)
A
A
B
B
Inverse
Pass-Transistor
Network
F=AB
F=A+B
F = AB
AND/NAND
F=A
(b)
F =A+B
B
OR/NOR
F = A
EXOR/NEXOR
Since circuit is differential, complimentary inputs and outputs are available. Although generating differential
signals require extra circuitry, complex gates such as XORs, MUXs and adders can be realized efficiently.
CPL is a static gate, because outputs are connected to Vdd or GND through a low-resistance path (high noise
resilience).
Design is modular all gates use same topology; only inputs are permuted. This facilitates the design of a
library of gates.
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EE141
C = 2.5 V
M2
A = 2.5 V
A = 2.5 V
B
CL
B
Mn
M1
Level Restorer
Mr
B
A
Mn
M2
X
Out
M1
Advantage: Full Swing. Eliminates static power in inverter + static power through level restorer and pass
transistor, since restorer is only active when A is high.
Restorer adds capacitance, takes away pull down current at X contention between Mn and Mr (slower
switching). Hence Mr must be sized small. Mn and Mr must be sized such that the voltage at node X drops
below the threshold of the inverter VM, which is a function in the sizes of M1 and M2.
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EE141
DD
0V
2.5V
VDD
0V
VDD
Out
2.5V
C
C
C = 2.5 V
A =2.5 V
VDD
B
CL
M2
C= 0 V
F
S
M1
B
F=(AS+ BS)
EE141
10
M2
F
M1
B
M3/M4
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EE141
Resistance, ohms
Rn
20
Rp
2.5 V
Rn
Vout
Rp
10
0
0.0
0V
R n || Rp
1.0
Vout, V
2.0
Rn {(Vdd-Vout)/In} & Rp {(Vdd-Vout)/Ip} are in parallel. The currents through devices are
dependent on value of Vout and hence the operating mode of the transistors. During the lowto-high transition, the pass transistors traverse through a number of operation modes.
Since Vd and Vg = Vdd, the NMOS is either in saturation or off. The PMOS changes from
saturation to linear during the transient.
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EE141
30
2.5 V
Resistance, oh ms
Rn
20
q
q
2.5 V
Vout
Rp
10
0
0.0
Rp
Rn
0 V
Rn || R p
1.0
Vout , V
2.0
Rn =
Vdd Vout
=
In
Similarly,
EE141
Vdd Vout
(Vdd Vout ) 2
k n (Vdd Vtn )(Vdd Vout )
V V
1
Rp = dd out
Ip
k p (Vdd Vtp )
1
k n (Vdd Vtn )
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2.5
V1
In
Vi
Vi-1
C
2.5
Vi+1
C
2.5
Vn-1
Vn
0
(a)
Req
In
Req
V1
Req
Vi
Vi+1
Vn-1
Req
Vn
C
(b)
n( n + 1)
2
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EE141
Delay Optimization
2.5
2.5
V1
In
2.5
Vi
Vi-1
C
2.5
Vn-1
Vi+1
C
Vn
(a)
Req
Req
V1
In
Req
Vi
Vn-1
Vi+1
Req
Vn
C
(b)
m
Req
Req
Req
Req
Req
Req
In
C
CC
CC
(c)
m( m + 1) n
n
t p = 0.69 CReq
+ 1tbuf
Linear dependence on n instead of n2
2
m
m
t buf
t p
To find mopt, then
= 0 yielding mopt = 1.7
CReq
m
EE141
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