a=

R2
1000
=
=0.8
R1 + R2 250+1000
1

1/ 2

T =2 ( Ca ) 2 =2 ( 60 106 75 1012 0.8 ) =0.377 s

K=

6
R1
1
T
250
1
0.377 10
+
=
+
=0.525
R2 C 4 60 106 1000 75 1012
4

) (

Do K < 1 nn p ng m di hn.

Phng trnh p ng thi gian ln theo (2.22)

1
2 2

y=1

( 1K 2 )

t
t
sin 2 ( 1K ) +cos 2 ( 1K 2 ) 2 e
1
T
T
2

2 Kt
T

y=1( 0.617 .sin 14.2 t+ cos 14.2t )e8.75 t ( t : s)

T (2.23) ta tm c cc cc tr:
mT

t m=

1
2 2

=0.221m

2 ( 1K )
m=1 ; 2; 3

m 2 K xm

y m=1(1 ) e

m (

=1(1 ) e 1.93 m

Phng trnh p ng nh phng theo (2.25)

R 1 R2 t

y=e

( R 1+ R 2 ) L

=e0.0267t 10.0267t (t : s)

st nh

P=

R1 R 2 t p
100 =2.67 3 s=8.01
( R 1 + R2 ) L

p ng sau thi gian tp theo (2.30)

y= 1e
+
3 s

y
th

R1 R2 t p

( R1 + R2 ) L

)e

R1 R2 t

( R1 +R2 ) L

=0.083. e0.0267t

a/ Vi R = 10k

Gi s c 2 diode u dn, ta c:

I 1 R1 +V 1=I 2 R2 +V 2
T (1) v (2)

ch c diode 1 dn ( v nu diode 2 dn th

V A >V 2 >0,5> V 1 th diode 1 cng dn)

Khi :

V i=I 1 R+ I 1 R1 +V 1

I 1=9.96 mA

(2)

I 1 =12.8 mA v I 2 =2.93 mA

Gi s sai

(1) V i=( I 1 + I 2 ) R+I 1 R1 +V 1

V A =0.4 V

Diode 2 tt ng.

Vy vi R = 10k,

I 1 =9.96 mA v I 2=0

b/ Vi R = 1k

Gi s c 2 diode u dn, ta c:

I 1 R1 +V 1=I 2 R2 +V 2
T (1) v (2)

(1) V i=( I 1 + I 2 ) R+I 1 R1 +V 1

I 1 =50.9mA v I 2=47.8 mA

C 2 diode u dn ng
Khi R = 1k,

I 1 =50.9mA v I 2=47.8 mA

(2)

a/ Ta c :
I Z =II L
Khi

I Lmin=0

I Z =I =

V iV Z
I Zmax
R

I Zmin=I I Lmax 5 mA

I Lmax =

R 3.75 k

V iV Z
5
R min

b/ Ta chn R = 4k, khi :

5 mA I Z =I I L <40 mA
5 mA

V iV Z
40 mA
R

170 V V i 310 V

I Lmax =35 mA