Nhm 19:

H Vnh Ph

41102570

Trn Vn Hin 41101149

BI TP 2.10
Mt bin p xung c cc thng s sau: L=7,5mH, =60H, C=75pF,
R1=250, R2=1K, n=3. V p ng ng ra vi tn hiu vo l mt
xung vung
R2
1000
=
=0.8
R 1+ R 2 1000+ 250

a=

T=2(Ca)1/2=2(60x10-6x50x10-12x0.8)1/2=0.376s
K=

( R1 + R 12 C ) 4T =( 60 x250106 + 1000 x 751x 1012 ) 3.76 4x 107

Do K<1nn p ng m di hn
Phng trnh thi gian ln c tnh nh sau:
1

y=

K
t
t
sn2 (1K 2)1/ 2 +cos 2 (1K 2 )1/ 2 e2 Kt /T
2
T
T
( 1K ) 1/2

y=1-(0,614sin14,23t+cos14,23t)
T (2.23) ta tm cc cc tr:
tm

mT
2 1/ 2

2 ( 1K )

=0.22m

m=1,2,3.
ym=1-(-1)m

e1.925m

m=1: t=0.22, y=1.14

m=2: t=0.44, y=0.97

8.75 t

(t;s)

=0.5236

m=3:t=0.66, y=1.00

y=

e0.0267t =

1-0.0267t

(t:s)

st nh
P=

Rtp
x 100 =2.67 x 3=8
L

p ng sau thi gian tp theo (2.30)

0.08 0.0267t
=0.083 e0.0267 t
y= ( 1e ) e

y(tp+)=y(3s+)=-0.0766

(t:s)

Nhm 19

Gii:
u tin, ta gi s c hai diode u dn. Ta c s tng ng nh
sau:

Dng th nt:
Ta c biu thc sau:

( R1 + 201 + 151 ) = 100R + 0.220 + 0.515

Cu a: Vi R= 10k
=0.456
i1=

0.4560.2
=
20

0.0128

i2=

0.4560.5
=
15

-2.93x10-3 => gi thuyt sai => D2 tt

Ta gii li vi s sau:

i1=

ViVD 1
R+ Rf 1

1000.2
101000+20

= 9.96 (mA) .

Cu b: Vi R=1K
=1.218
i1=
i2=

1.2180.2
=0.0509
20
1.2180.5
=
15

0.0478

chp nhn gi thuyt hai diode u dn

a)

Ta c :

Iz = I IL , Iz = (0 40 )mA .

Khi ILmin = 0 :
Iz = I =

ViVz
R

20050
R

40 *

R 3.75 K .
Izmin = I ILmax
ILmax =

ViVz
Rmin

5*

103

- 5*

10

103

20050
3
3.7510

ILmax =

103

- 5*

ILmax = 35 mA .

b) Ta c :
5*

10

Iz = I IL 40*

5*

103

30*

10

ViVz
R
Vi50
R

10

25*

103

65*

R 3.75 K , chn R = 4K
30*4 + 50 vi 65*4 + 50
170 V vi 310 V .

10

40*

103