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Basikes Eksisoseis Hlektronikhs 3-2013
Basikes Eksisoseis Hlektronikhs 3-2013
Basikes Eksisoseis Hlektronikhs 3-2013
N-MOS
(BJT) ( rx rbb,
M 2013
r rbe
re rd )
():
:
MOS
BJT
:
:
:
, :
n :
nL =
n :
nH = o 21 n 1 . n fj, j = 1,., n: f nH
1n
. n fLj , j = 1,., n :
1 .1
1
1
1
1
+ 2 + ..... + 2
2
fH1 fH 2
f Hn
( ):
( ):
MOS :
Av = g m1 (rds 2 rds 4 )
W
W I
g m1 = 2 pCox I D1 = 2 pCox bias
L 1
L 1 2
CC t < Z , P2
SR
dVout
dt
max
I SS
CL
g
1
= m1
GB = Av (0) p1 = ( g m1 g m 2 RI RII )
g m 2 RI RII Cc Cc
45 z 10 GB:
p2 1.22GB
60 z 10 GB:
p2 2.22GB
1
Cc (1 / g m 2 R )
MOS n-MOS
SR =
I5
Cc
Av1 =
GB =
g m1
Cc
p2 =
p-MOS:
I5
g m1
2 g m1
=
g ds 2 + g ds 4 I 5 (2 + 4 )
g m6
CL
Cc > 0.22C L
g m3
> 10GB
2C gs 3
Av =
I5
g m6
g m6
=
g ds 6 + g ds 7 I 6 (6 + 7 )
g m6
Cc
I5
I5
2 I DS
+ V 03(max) V 01 (min)
I5
S5 =
2I 5
2
K [VDS 5 sat ]
'
5
g m2 6
I6 =
2 K 6' S6
2 g m2 g m6
I 5 (2 + 4 )I 6 (6 + 7 )
VDS ( sat ) =
'
3
V 01 (max ) 100mV
g
S6 = S 4 m6
gm4
g m2 2
g m1 = GB Cc S1 = S 2 = '
K2I5
g m6 = 2.2 g m 2 (C L / Cc )
g m6
I5
I 5 = SR Cc
S6 =
Av 2 =
S7 = (I 6 / I 5 )S5
I m2
4 I m2
PDC = I R =
2
DC
PDC = I R =
2
DC
2
2
PAC = I
2
rms
I m2
R = R
4
2
PAC = I rms
R =
I m2
R
2
n=
PDC
100% = 40.6%
PAC
r=
2
2
I rms
I DC
100% = 121%
I DC
n=
PDC
100% = 81.2% r =
PAC
2
2
I rms
I DC
100% = 48%
I DC
r=
VAC ( rms )
Vr
1
=
VDC
2 3VDC 2 3 fCR
r=
VAC ( rms )
Vr
1
=
VDC
2 3VDC 4 3 fCR
Widlar:
Id =
(V
2 R
sm
< a <
sin s t VB )d ( s t )
Vdaf =
V =
f
da
PF =
Vdaf =
Vsm sin( s t ) d ( s t ) =
+a
Vsm sin( s t )d ( s t ) =
Vsm
(1 + cos a )
2Vsm
I s1
2 2
cos 1 =
cos a
Is
+a
Vsm sin( s t )d ( s t ) =
cos 1 = cos a
Ps = Vs I s1 cos 1 = Vdaf I d =
2Vsm
2Vsm
I d cos a
V
0 < a < cos 1 B
2Vsm
Id =
Vdaf VB
R
PB = VB I d
Id =
Vdaf VB
R