Chng 1: M u

Chng 1

M U
in t cng sut l lnh vc p dng kh rng trong sn xut, trong cng
nghip, m n da trn nn tng ca cc mn hc mch in t, k thut xung
s Trong i tng c iu khin truyn nng lng in c kim
sot t ngun n ti. Cng sut ny c tr s t vi chc watt n vi gigawatt.
Yu cu quan trng trong in t cng sut l hiu sut v gi tr kinh t do
phi s dng k thut giao hon nhm gim thiu tn tht trong qu trnh chuyn
i v iu khin. Lnh vc p dng in t cng sut c m t nh hnh 1.1

Hnh 1.1
Hnh 1.1 bao gm 4 k thut bin i ct li nht ca in t cng sut l

AC bin i thnh DC: chnh lu

DC bin i thnh DC: bin i in mt chiu

DC bin i thnh AC: nghch lu

AC bin i thnh AC: bin i in AC

Trong cng nghip, ngoi ti ring ra, phn ln mch in t cng sut l
iu khin ng c thc hin cc yu cu ca ti
Trong chng ny chng ta kho st cc ni dung sau

Cc i lng c trng v in: tr trung bnh, tr hiu dng, cng sut

Cc linh kin cng sut giao hon c nhng c tnh sau

Tc giao hon nhanh
Gim thiu cng sut tiu tn
Cho php iu khin cc ti nng (dng ti ln hay in tr ti nh)

Chng 1: M u

C gn cc b vi x l, vi iu khin hoc PLC

Cc linh kin cng sut giao hon thng dng l: Diode,Transistor, Mosfet,
SCR, TRIAC, GTO, SCS, IGBT, MCT

1.1 Cc i lng c trng

1.1.1 Gi tr trung bnh
Gi i(t) l hm bin thin tun hon theo thi gian vi chu k Tp. Gi tr
trung bnh ca i lng i(t), vit tt l IAV (AV: averagegi tr trung bnh)
c xc nh bi h thc

AV

1
=
Tp

t0 + T

i ( t ) dt

(1.1)

t0

Vi t0 l thi im u ca chu k c ly tch phn.

Cc i lng thng dng c tnh trung bnh bao gm
Tnh tr trung bnh ca dng in IAV
Tnh tr trung bnh ca in p UAV
Tnh tr trung bnh ca cng sut PAV
Nu dng qua ti c gi tr khng i trong c chu k. Cng sut trung bnh
c th tnh bi h thc:
Pd = Ud Id

(1.2)

Cc trng hp c bit:
a.

Ti R
Quan h gia in p v dng in tc thi qua in tr R l:
uR = RiR

(1.3)

Ly tr trung bnh hai v ta c:

URAV = RIRAV
b.

(1.4)

Ti L
Quan h gia in p v dng in tc thi qua cm L l:

uL = L

dit
dt

(1.5)

ch xc lp iL(t0) = iL(t0 + Tp). Tr trung bnh ca in p trn L c

tnh bng cch ly tch phn hai v ca phng trnh trn trong thi gian (t0, t0 +
Tp), kt qu thu c

Chng 1: M u

ULAV = 0
c.

(1.6)

Ti R-L
di Z
dt

(1.7)

Tr p trung bnh:UZAV = RIZAV + ULAV = RIZAV

(1.8)

Tng t: U Z = R.i Z + L

IZAV = UZAV/R

T :

Tr trung bnh dng khng ph thuc vo gi tr L m ch ph thuc vo R

v in p UZ
d.

Ti R-L-E
U Z = R. i Z + L

di Z
+E
dt

(1.8)

Vi E l sut in ng khng i E= const.

UZAV = RIZAV + E

(1.9)

1.1.2 Gi tr hiu dng

Gi thit i lng i(t) bin thin theo thi gian, theo mt hm tun hon
vi chu k Tp hoc vi chu k theo gc Xp = Tp . Gi tr trung bnh ca i
lng i(t) c tnh theo cng thc
I RMS =

1
Tp

t0 + T p

i dt =
2

t0

1
Xp

x0 + X

2
i dx

(1.10)

x0

Ch s RMS: Root Mean Square gi tr hiu dng

1.1.3 Cng sut
Cng sut tc thi ca mt ti tiu th c xc nh bng tch in p v
dng in tc thi dn qua n.
p(t) = u(t).i(t)

(1.11)

Cng sut trung bnh

PAV

1
=
Tp

t0 + T p

t0

1
p(t )dt =
Tp

t0 + T p

u (t ) i(t )dt

(1.12)

t0

Nu dng qua ti khng i th

PAV = UAV.I = UAV.IAV

(1.13)

Nu in p t trn ti khng i th
PAV = U.IAV = UAV.IAV

(1.14)

Chng 1: M u

Cc trng hp c bit
a.

Ti R

1
1
PAV =
u (t ) i (t )dt =
R i 2 (t ) dt

Tp 0
Tp 0

(1.15)

PAV = 0

(1.16)

PAV = 0

(1.17)

Tp

b.
c.

Tp

Ti L
Ti C

1.1.4 H s cng sut

H s cng sut pF nh ngha cho mt ti tiu th, nh l t s gia cng
sut tiu th thc t trn ti P v cng sut biu kin S ca ngun cung cp cho
ti .

pF =

P
S

(1.18)

Trong trng hp c bit ca ngun p dng sin v ti tuyn tnh cha cc

phn t nh R,L,C khng i v sut in ng dng sin cng tn s ca ngun
p vi gc lch pha c ln bng . Ta c cng thc tnh h s cng sut nh
sau
P = mUI cos
S = mUI
pF =

P
= cos
S

(1.19)

Trong U, I l cc gi tr hiu dng ca in p v dng in qua ti, m l

tng s pha.
Cc b bin i cng sut l nhng thit b c tnh phi tuyn. Gi s ngun
cung cp dng sin v dng in qua n c dng tun hon khng sin. Da vo
phn tch Fourier p dng cho dng in i, ta c th tch dng in thnh cc
sng hi c bn i1 cng tn s vi ngun p v cc sng hi bt cao i2, i3,... d
dng thy rng sng in p ngun v sng hi c bn ca dng in to nn
cng sut tiu th ca ti
P = P1 = mUI1cos1

(1.20)

Trong 1 l gc lch pha gia in p v dng in hi c bn. Cc sng

hi bc cao to nn cng sut o

Chng 1: M u

Tac
S2 = (mUI)2 = m2U2(I12 + I22 + I32 + ...)

S 2 = m2U 2 I 2 + m2U 2 I 2j
j =2

= m2U 2 I 2 cos2 1 + m2U 2 I 2 sin2 1 + m2U 2 I 2j

j =2

S2 = P2 + Q2 + D2

(1.21)

Vi
P = m.U.I1 cos1 : l cng sut tiu th trn ti
Q = m.U.I1sin1 : l cng sut phn khng (cng sut o do sng hi c bn
ca dng in to nn)

D = m 2U 2 I 2j

(1.22)

j =2

D: l cng sut bin dng (cng sut o do cc sng hi bc cao ca dng

in to nn)
Khi nim bin dng (Deformative) xut hin t ngha ca cc sng dng
in ny i vo li in to nn st p trn cc ni tr ca ngun, t sng p
thc t cp cho ti b mo dng.
T ta rt ra biu thc tnh h s cng sut theo cc thnh phn cng sut
nh sau:
=

P
P
=
S
P2 + Q2 + D2

(1.23)

Cc cch tng h s cng sut

Gim Q: Cng sut o ca sng hi c bn, c ngha l thc hin b cng

sut phn khng. Cc bin php thc hin nh b bng t in, b bng
my in ng b kch t d hoc dng thit b hin i b bn dn.

Gim D: Cng sut o ca sng hi bc cao. Tu theo phm vi hot ng

ca dy tn s ca sng hi bc cao c b ta c th phn bit cc bin
php sau y

Lc sng hi: p dng cho cc sng hi bc cao, ln hn cc sng hi c

bn n gi tr khong hng KHz. C th s dng cc mch lc cng hng
LC. V d dng mch lc LC cng hng vi sng hi bc 5,7,11..mc
song song vi ngun cn lc

Chng 1: M u

Kh nhiu: p dng cho cc sng hi bc cao c tn s khong KHz n

hng MHz. Cc sng tn s cao ny pht sinh t cc mch iu khin pht
sng vi tn s cao hoc do qu trnh ng ngt cc linh kin cng sut.
Cc sng hot ng trong cc mch in c kh nng pht sng in trng
lan truyn vo mi trng v to nn tc dng gy nhiu cho cc thit b
xung quanh, thm ch gy nhiu cho chnh bn thn mch iu khin cc
thit b cng sut. Cc thit b bin i cng sut thng phi trang b kh
nhiu nghim ngt. Mt trong cc bin php s dng l dng t, dng bin
php bc kim dy dn hoc dng li chng nhiu cho thit b

Ngoi ra, c th dn gii h thc h s cng sut theo h thc sau

pF =

I1
cos 1
I

(1.24)

mo dng THD: (Total Harmonic Distortion)

L i lng nh gi tc dng sng hi bc cao (bc 2, 3) xut
hin trong ngun in cho bi h thc sau
m

THD =

I
j =2

I1

2
j

.100[%]

(1.25)

Trong Ij l tr hiu dng ca sng hi bc j, j 2 v I1 l tr hiu

dng dng in ngun
1.2 Linh kin in t cng sut
1.2.1 c tnh giao hon ca cng tc bn dn
Do tnh cht ca cht bn dn nn khi chu tc ng ca xung kch, dng
sng ng ra c dng nh hnh 1.2
c tuyn giao hon c biu din t trng thi tt (off) sang trng thi
dn (on) v t trng thi dn (on) sang trng thi ngng (off)

Chng 1: M u

Hnh 1.2
a.

Trng hp cng tc l tng (Vf =0)

v,i

Cng sut p

Dng in I
Chn t=0
toff

tswon

Hiu in th V
ton

t
tswoff

toff

tswon

Hnh 1.3
Chn t = 0 lc bt u khi dn, ta c phng trnh dng in v in
th: do khi dn in th 2 u cng tc l Vf = 0V nn

i=I

t swon

v = V 1
t
swon

(1.25)

Cng sut tc thi

t t
t
t2

= VI
2
p = vi = VI 1
t swon t swon
t swon t swon

(1.26)

Nng lng tht thot trong thi gian khi dn bng

Wswon =

t swon

pdt =

1
VItswon
6

(1.27)

Chng 1: M u

Phn gii tng t ta c kt qu nng lng tht thot trong thi gian
khi ngng turn off bng
Wswoff =

t swoff

pdt =

1
VItswoff
6

(1.28)

Nng lng tht thot tng cng trong chu k giao hon bng
Wsw = Wswon + Wswoff =

1
VI( tswon + tswoff )
6

(1.29)

Cng sut tiu tn trong chu k giao hon

Psw =
b.

Wsw
1
=Wswf = VI( tswon + tswoff )f
T
6

(1.30)

Trng hp in th cng tc bn dn khc khng (Vf 0)

v,i

Cng sut p
Dng in I

Chn t=0
toff

Hiu in th V
tswon

Vf
tswoff

ton

toff

tswon

Hnh 1.4
Do khi dn in th 2 u cng tc l Vf 0V nn
i=I

t
t swon

; v = - (V - Vf)

+ V = V 1

t swon

1
1
+ V f
t swon
t swon

(1.31)

Cng sut tc thi trong thi gian khi dn

p = vi = VI

t
t swon

(V V f )I

t2
2
t swon

(1.32)

Nng lng tiu tn trong thi gian khi dn

Wswon =

t swon

1
1
11

pdt = VIt swon + V f It swon = VI + V f I t swon

6
3
3 2

(1.33)

Tng t, nng lng tiu tn trong thi gian khi ngng:

Wswoff =

t swoff

1
1
11

pdt = VIt swoff + V f It swoff = VI + V f I t swoff

6
3
3 2

Nng lng trong sut thi gian giao hon

(1.34)

Chng 1: M u

Wsw = Wswon + Wswoff =

1
3

VI + V f I ( tswon + tswoff )
2

(1.35)

Vy cng sut giao hon tiu tn trung bnh ti tn s giao hon bng
Psw = Wswf =
c.

1 1

VI + V f I ( tswon + tswoff )f
3 2

(1.36)

Cng sut tht thot tnh

Gi thi gian cng tc giao hon dn tnh l Ts , v thi gian dn thc t

ca cng tc l Ton , ta c
Ton = Ts +

1
(t swon + t swoff ) Ts = D 1 (t swon + t swoff
f 2
2

(1.37)

Vi D l chu trnh nh dng

D=

TON
TON + TOFF

(1.38)

V Vf l in th 2 u cng tc khi dn, ta c cng sut tnh tiu tn trung

bnh ti tn s f bng
D
f

Ps = VfI

1
(t swon + t swoff ) f
2

(1.39)

1.2.2 Diode cng sut

Diod cng sut hot ng nh diod cng sut nh (ni p-n) nhng vi dng
in ln t vi chc n vi trm Ampe.

Hnh dng cu to v k hiu nh hnh 1.5

A

J
p

K
n
Et

Engoi

Etx

Etx

Engoi

Hnh 1.5

Chng 1: M u

Thi gian hi phc

Khi diod ang dn thnh lnh chuyn sang trng thi ngng, diod
khng th ngng ngay m c thi gian chuyn tip do s hi phc ca cc
ht ti trong ni p-n lm dng v th c dng nh hnh 1.6
Q rr
d i

/ d t

I F

/ d t

rr

rr

0 .2 5

/ 2

r r

V o n

FP

rr

rr

t
t
t

t
S =

rr

5
4

Hnh 1.6
o trr (thi gian hi phc nghch): l thi gian khi dng in gim t tr s 0
n tr s IRM ri li tr v tr s 0. Thi gian trr c gi tr t vi ns s ,
trr = ts + tt.
o ts thi gian tch tr, khi in th gim nhanh t thun n nghch nhng s
ht ti in vn cn di chuyn trong vng him lm dng in thay i t
tr s 0 n tr s IR.
o tt thi gian chuyn tip, l thi gian dng in chuyn i t tr s IRM v
tr s hay mt tr s ti thiu I0 no tu theo loi diod.
o i vi cc diod c thi gian hi phc nhanh, ta c th xem ng cong
hi phc nh mt tam gic v tnh c

in tch tch tr
Qrr =
Vi:

1
IRM t rr
2

(1.40)
i D
t

IRM =

t s

Suy ra thi gian hi phc nghch

10

Chng 1: M u

trr =

2Qrr
i D

t s
t

(1.41)

Cc trng hp gii hn
Trng hp tt = 0 hay ts = trr (giao hon nhanh)
trr =

2Qrr
;
i D
t

IRM = 2Qrr D
t

(1.42)

Trng hp ts = tt = trr/2
trr =

4Qrr
;
i D
t

IRM = Qrr D
t

(1.43)

Khi in th bin thin tn s cao f = 100kHZ, th diod bnh thng

khng cn hot ng ch giao hon na (do c s chuyn i trng
thi nhanh).

Cng sut tht thot ca diod cng sut

Tng t nh tnh trn ta c cng sut tiu tn tng cng bng
PT = PON + POFF + Psw

(1.44)

Vi
PON = VFIF t ON
T

POFF =VRIR t OFF

T

Psw = Pswon + Pswoff =

1
VF(max)IF(max) (t swon + t swoff ) f
6

1.2.3 Transistor cng sut

a.

BJT (Bipolar Junction Transistor)

chu c dng in rt ln, transistor phi c in tch trong vng pht

tht ln, do cc transistor cng sut ny c thit k vi rng vng pht
hp ( gim thiu in tr nn k sinh) v c cu trc xen k (interdigitated
structure) ca nhiu cc nn v cc pht. in tr cc pht rt nh.

11

Chng 1: M u
B

p-

n-

n
C

collector

base

collector

NPN
BJT

PNP
BJT

base

emitter

emitter

Hnh 1.7
Darlington

C
I

C
B

D
1

= D M+ D+ M

Hnh 1.8

c tnh ca transistor cng sut

Transistor cng sut c c tnh sau
li dng nh (20 100) v tu thuc vo dng thu IC v nhit .

Dng thu cng ln li dng cng nh.

Ngoi hin tng hu thc do phn cc nghch ra cn c hin tng

hu thc th cp do transistor hot ng in th v dng in ln.

c tuyn cho bi hnh 1.9

12

Chng 1: M u

Hnh 1.9
Qu trnh qu ca transistor nh hnh 1.10

Hnh 1.10
Ta thy ch trong ch xung, in tch hot ng trong vng an ton
(SOA) c m rng hn

Cng sut tht thot

Cch tnh ton nh trn vi cc lu sau
Khi transistor dn bo ho, ta c:

PON = (VCEbhICM + VBEbhIB)

t ON
t
VCEbhICM ON
T
T

(1.45)

Khi transistor ngng dn v dng r Ir rt b, ta c:

POFF = VCCI

t OFF
T

(1.46)

Khi giao hon, ta c:

Wsw = Wswon + Wswoff =

1
VCEMICM (t swon + t swoff
6

Vy cng sut tiu tn tng cng ca transistor bng

13

(1.47)

Chng 1: M u

PTtb = ( PONtON + POFFtOFF + Wswon + Wswoff )f

(1.48)

Mch bo v Transistor
trnh ni C-E chu in th qu ln khi transistor chuyn trng thi
t dn n ngng ta mc thm mch h tr theo nh hnh 1.11
VCC

Cs

Hnh 1.11
Khi transistor dn, in th VCEbh rt b, t Cs x (v trc np
y), transistor hot ng bnh thng.
Khi transistor thnh lnh chuyn sang ngng, in th cc thu tng
nhng khng tng nhanh t ngt m tng t t do t Cs np in, v gi
VCE gn nh khng i sau khi t np y. Nh Transistor khng b ph
hu v in th cao v dng ln hnh 1.12
ic
Ic

is

tf

Is
vCE

tf

Hnh 1.12
b.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Cu to- k hiu
Mosfet cng sut c cu trc ch V (cn gi l VMOSFET) cp
dng ln hnh 1.13. Cc nghin cu c thc hin nhm tng kh nng
cng sut ca cc linh kin rn. Mt lnh vc cho thy nhiu ha hn cc
kh nng ca mosfet, trong cc knh dn c iu chnh c cu trc

14

Chng 1: M u

khc vi knh dn thng nh loi c in tc t mng n ngun. M n

c thc hin knh dn theo hnh V nh hnh , mt lp bn dn c thm
vo. Thnh phn ca VMOS c a ra l do hin tng dng mng
ngun chy thng ng do cu trc ca n gy ra. Cc mng by gi c
t trn mt mnh vt liu bn dn c gn thm vo. iu ny cho php
cc mng ca mosfet c t vi cc cnh ta nhit c th phn tn
nhit ta ra t linh kin. Cng c dng hnh V iu khin hai mosfet, mi
transistor nm hai bn khe lm. Bng cch lm song song hai chn cc S,
kh nng dng tng gp i. VMOS khng i xng v th D v S khng
th thay th cho nhau nh mosfet cng sut thp. Cc loi fet c in gii
hn dng khong vi mA, nhng VMOS c kh nng cp dng n 100A.
Nh vy n c kh nng chu c cng sut ln hn nhiu so vi fet c
in.
Cc linh kin VMOS c th p dng tt cc ng dng tn s cao,
cng sut ln. ng thi c u im l c h s nhit m nn trnh c
hin tng tri nhit, dng r rt nh v chng cn c kh nng thc hin
chuyn mch tc cao. VMOS c th c cc khong cch gia cc
ng c tuyn bng nhau theo cc gi tr bng nhau ca p cng, v th
n c th s dng ging nh BJT cho cc mch khuch i tuyn tnh cng
sut cao
Mosfet c nhng c tnh sau

Hnh 1.13

c tuyn

15

Chng 1: M u

Hnh 1.14

Nguyn tc hot ng

Hnh 1.15
c tuyn c tr gii hn ti a, khng c hin tng hu thc th
cp nh transistor cng sut
Dng thot IDS t vi chc n vi trm Ampe, in th nh thng
cc i BVDS t 500V 800V
in tr ng khi dn nh rdson vi chc m
Tng tr vo rt ln.
VGSmax ln khong 20 V
Thi gian giao hon nhanh khong f > 100kHZ
Thi gian p ng trn khong nhit rng
Thit k mch iu khin n gin
Khc vi Mosfet cng sut nh, dng thot IDs ca Mosfet cng
sut cho bi
iD = k( VGS - VTH )

(1.49)

Cng sut tht thot ca VMOSFET

Cch tnh tng t nh trn, ta c
Cng sut tn hao khi dn

16

Chng 1: M u

PON = I D2 RDS (on )

t ON
T

(1.50)

Cng sut tn hao khi ngng dn

POFF = VDSmaxIDSS t OFF

(1.51)

Nng lng tn hao khi khi dn

Wswon =

1
VDSmaxIDtswon
6

(1.52)

Nng lng tn hao khi khi ngng

Wswoff =

1
VDSmaxIDtswoff
6

(1.53)

Cng sut tn hao trong thi gian giao hon bng

Psw = ( Wswon + Wswoff )f

(1.54)

Cng sut tn hao tng cng ca Vmosfet

PT = PON + POFF + Psw

(1.55)

Bo v cho Mosfet cng sut

Cu to khc bit ca MOSFET so vi BJT lm cho linh kin hot
ng tt m khng cn bo v nhiu nh BJT. Tuy nhin, ta c th s dng
mch RC nh mc song song vi ng ra ca linh kin hn ch tc dng
cc dy in p v cc xung nhiu dao ng xut hin khi linh kin ng

Hnh 1.16
c.

IGBT (Insulated Gate Bipolar Transistor)

Cu to, k hiu v mch tng ng nh hnh 1.17

L linh kin kt hp gia c tnh tc ng nhanh v cng sut ln
ca Transistor vi in th iu khin ln cc cng ca MOSFET. Mch
cu to c dng sau

17

Chng 1: M u
G

E
n

E
n

Cch in
E

np

n-

pn

p+

C
C

Hnh 1.17

Hnh 1.18

IGBT cn c cc tn gi theo cc hng khc sau:

COMET (hng RCA)
GEMET (Gain Enhanced Mosfet, hng Motorola)
MOSIGT (IXYS Co)
MEGAMOS (IXYS Co )

V d thng s k thut ca
IGBT D4FQ4,R4 c
Ic = 18A
VCE = 400V, 500V
Cng sut cp cho ti vi kW

18

Chng 1: M u

tswoff rt b, 0,15 s
VCEbh = 2V
Tn s lm vic cao vi kHz

IGBT c c tuyn sau

Hnh 1.19

Cng sut trn ti

Cng sut trung bnh cp cho ti
PL =

VL2
RL

(1.56)

Vi thi gian dn tON, ta c

VL =

Vcc t ON
T

(1.57)

Thay vo, ta c
Vs2
RL

PL =

t ON

(1.58)

Cc cng sut tiu tn trong thi gian khi dn Pswon v khi tt Pswoff
tng t nh transistor cng sut trn, v cng sut tiu tn tng cng
giao hon:
Psw = Pswon + Pswoff = 1/6( VCEmax.Icmax )( tswon + tswoff )fsw

(1.59)

1.2.4 Thyristor

Gm cc linh kin cng sut c cu trc gn vi Thyristor (SCR gi theo

phng th nghim Bell t nm 1956) v cc linh kin kch cho cc linh kin cng
sut theo bng tm tt sau
Thyristor c ng dng trong cc ng dng sau: relay, b ngun cp in
n nh, mch tr, cng tc tnh (cng tc giao hon), iu khin ng c, mch
chopper, mch Inverter, bin tn (cycloconverter), mch np accu, iu khin

19

Chng 1: M u

nhit , l nung, mch iu khin phaNn SCR thng c s dng trong

cng nghip, cc x nghip sn xut, iu khin cng sut ln
a.

SCR ( Silicon Controlled Rectifier)

Cn c gi l linh kin chnh lu c iu khin lm bng cht bn dn

silic

Cu to hnh dng v k hiu

Gm 4 lp pnpn ghp xen k
A

J2

J1
p1

p2

n1

n1

J3
n2

p n
1

iAG

J3 iAK

J2
p

p1

p2
G

J1

A+ p

T2

T1

A
J1

n2

J2 J3 iA
p n2
n
G
+

K
iGK

Hnh 1.20

Cch hot ng
C th xem SCR nh gm 2 transistor npn v pnp ghp kho cht
nh hnh 1.21
n1
T1

p1

n2

T2
p2
G

Hnh 1.21
Khi phn cc nghch ( VA < VK v VAK < 0), cc ni u phn cc
nghch nn ngng dn, SCR ngng dn, c dng r rt b qua SCR.

20

Chng 1: M u

Khi phn cc thun ( VA > VK v VAK > 0) cc ni J1, J3 phn cc thun

nn dn, nhng lc VAK cn nh th ni J2 phn cc nghch nn ngng v
do SCR vn cn ngng dn, cho n khi no VAA tng ln ln lm
xy ra hin tng hu thc ca ni gia J2, to dng in o t chy qua
SCR lm SCR dn. Kt qu khi SCR dn dng IA rt ln v VAK gim n
tr s nh ( do cc ht ti trn ngp cc ni).
Khi SCR dn, nu ta tng in th phn cc VAA ln th dng IA cng
tng nhng VAK gn nh khng i ( xem c tuyn hnh 1.22).
Khi c thm dng kch IG > 0 th hin tng hu thc s xy ra sm hn
vi in th VAA thp hn khi cha c IG ( IG = 0). IG cng ln th SCR cng
dn in th hu thc nh hn.

Cng thc dng IA

Ta c th chng minh iu kin SCR dn in bng cch xem SCR
nh do s ghp cht ca 2 transistor npn v pnp hnh 1.21
Ta c cc cng thc sau theo nh lut Kirchhoff v do cch gi cc
dng IA v IK:
IK = IA + IG;

IA = IE1;

IK = IE2

Ngoi ra cc cng thc ca transistor cho:

IC1 = 1 IE1 + ICBO1;

IC2 = 2 IE 2 + ICBO2

V do: IB1 = IC2

ln lt thay cc cng thc trn vo nhau ta c
IA = IE1 = IC1 + IB1 = IC1 + IC2= ( 1 IE1 + ICBO1) +( 2 IE2 + ICBO2)
= 1 IA+ 2 IK +(ICBO1 + ICBO2) = 1 IA+ 2 (IA + IG) + (ICBO1 + ICBO2)
IA =

2 I G + (I CBO1 + I CBO 2 )
1 ( 1 + 2 )

(1.60)

T cng thc 1.60 ta rt ra c cc trng hp sau

Khi ( 1 + 2 ) 0 , dng IA rt b, SCR ngng (OFF)

Khi ( 1 + 2 ) 1, dng IA (v cng ln) , SCR dn (ON)

Khi IG cng ln, SCR cng dn sm hn (v in th hu thc nh

hn)

C 5 cch lm tng dng anod IA lm SCR t trng thi ngng sang

trng thi dn

21

Chng 1: M u

Tng in th anod- catod, lm tng dng r ICBO, lm xy ra hin

tng hu thc ( 1 + 2 ) 1

Tng dng ca IG cc transistor nhanh chng i vo dn bo ho

Tng nhit mi ni lm tng dng trong transistor

Tng tc tng th dV/dt to dng np cho in dung ni pn, lm

cho ( 1 + 2 ) 1 ( Tj=1000C c dV/dt =200 V/sec)

S dng nng lng quang hc nh nh sng lm dn cc SCR

quang ( LASCR Light actived SCR)

c tuyn ca SCR
Mch in v c tuyn SCR nh hnh 1.22, v c tuyn hnh:

Hnh 1.22
Theo c tuyn ta thy

Khi SCR dn th n s tip tc dn ngay c khi ta ct dng kch IG

Khi SCR dn, mun lm SCR ngng ta phi s dng 1 trong 3

cch sau:
o

Ct b ngun cp in VAK.

Thng ng lc: dng mt b phn c in tr tht nh mc song

song vi SCR to ra dng IA < IH

To VAK < 0 (dng xoay chiu, xung giao hon)

Cc thng s k thut

in th hu thc thun VFBO: in th hu thc thun IG=0

Dng thun ti a IFmax (IDRM): Dng in anod IA ti a m SCR c

th chu c lin tc khi c gii nhit y . IFmax c tr t vi
Ampere n vi trm Ampere.

22

Chng 1: M u

in th thun VFmax (Volt Forward): in th cc i gia anod v

catod khi SCR dn. V F max c tr t 0,7 3,0V (thng l 1,6V).

in th hu thc ngc ti a BVRmax (Break Volt Reverse): L in

th ngc ti a c th tc ng vo 2 u anod-catod m khng lm
SCR h (SCR dn nhng cha xy ra hin tng hu thc).VBRmax
c tr t 50V - vi ngn Volt (2000 - 5000V).

Dng in duy tr IH (Holding current): L dng in IA ti thiu m

SCR cn dn v khi IA < IH s lm SCR ang dn tr thnh ngng.

Dng cht IL (Latching current ): Dng IA ti thiu gi cho SCR

dn khi IG= 0.Thng IL ln hn IH i cht ( SCR cng sut nh) v
gp nhiu ln ( SCR cng sut ln ).
Ch : Cc thng s VBRO, VF, IH, IL gim theo nhit .

Dng cng ti thiu IGmin: Khi VA bng VBRO th SCR dn vi dng

IG = 0.

Trong thc t SCR hot ng ch AC ta phi to dng IG SCR

dn ngay (m khng i VA ln ) ta gi l IGmin (c tr t vi mA
n vi chc mA ). Vi SCR cng sut ln IG cng ln nhng IG
khng c qu ln v s lm h SCR. IG ln nht c th n vi trm
mA.

Thi gian khi dn ton (turn on time): Thi gian t khi bt u c

xung kch cc G cho n khi SCR gn dn ti a (dn hon ton,
hay bng 0,9 IF nh mc ).

Do thi gian tc dng ca xung kch phi lu t nht bng thi gian
khi dn (ton vo khong 1 5 s ).

Thi gian khi tt toff (turn off time): Thi gian t lc in th anod
gim xung 0V cho n ln cao tr li m SCR vn cn ngng ( cha
dn tr li ). toff c tr vo khong vi chc s (5 19 s ). Trong
trng hp ti l cm khng toff nh hn nhiu.

ci tin ngi ta ch to cc linh kin tc ng nhanh v chu cng

sut ln nh MOSSCR, GTO ( gate turn off SCR, SCR tt bng cng
G).

V tc th SCR cn km xa Transistor k c Transistor cng sut.

Tc tng th thun dv/dt: L tc tng th ln nht ca anod m

SCR cha dn v nu vt qua tr s SCR s dn ( mc d VA
khng cn ln ).Tuy nhin y khng phi l cch hay nht kch
SCR m tri li phi trnh ( bng cch rp trn mch bo v RC nh
23

Chng 1: M u

bit Transistor, thng chn R t vi chc n vi trm v C

vi nF n vi chc nF (47 nF); C = 0,1 F khi dng IA c 10A).

Tc tng dng thun di/dt: L tr s ti a ca tc tng dng cho

php qua SCR, vt trn tr s ny SCR c th b h. L do l khi
SCR ang chuyn t ngng sang dn hiu th gia anod v catod cn
ln trong lc dng IA tng ln khin cng sut tc thi c th qu ln.
Lc SCR bt u dn, cng sut tiu tn khng ta ra khp SCR m
ch tp trung vng nh gn cng G nn nu cng sut ln c th lm
vng ny b hng. Tc tng dng ty thuc vo ngun in DC v
ti.

c tnh ca cc cng G

c tnh ca cng c gii hn PGM, IGM, VGM. SCR dn cc

dng v th phi ln hn mc ti thiu.

Th d vi SCR C38 ca hng GE, ta c:

-650C dng cng cc tiu c th kch SCR l 80mA

+1500C dng cng cc tiu c th kch SCR l 20mA

Tc dng ca nhit trn in th cc tiu Vgmin thng khng c

ch dn trn c tuyn cng v l in th cng 3V hay hn thng
c dng n d dng, nhng theo hnh v, mt in th cc tiu 3V
c biu th cho mi SCR vi dy nhit cn thit.

Thng s cc cng

in th nh ngc VGRM: l in th DC c tr m cc i m khng

lm h cng catod.

Dng kch cc i IGTM: l dng cng DC cc i cho php SCR khi

dn.

in th kch cc i VGRM: L in th DC cn thit to nn IGTM.

Cng sut cng tiu tn cc i PGM: Bng tch s VGTM v IGTM.

in th kch cng ti thiu VGmmin: L in th cng ti thiu m lm

SCR dn.

Dng kch cng ti thiu IGmmin: L dng cng DC ti thiu lm

SCR dn.

b.

TRIAC (Bidirectional Triode Thyristors)

Cu to, hnh dng v k hiu

24

Chng 1: M u

N1

MT2

MT2

MT2
MT2

P1

MT2

P
N

N2
N3

P2 N
4

P
G

MT1

MT1

MT1

P
MT1

T1

U1

MT1

MT1

MT2

T2

MT1

U1

MT2

MT2
G

MT1
G

Hnh 1.23
C th xem Triac nh gm 2 SCR ghp i song nhng ch c 1 cng
kch chung.

Cch hot ng - c tuyn

C 4 kiu hot ng:
Kiu I+

Kiu I-

Kiu II+

Kiu II-

VMT1MT2 > 0

VMT1MT2 > 0

VMT1MT2 < 0

VMT1MT2 < 0

IG > 0

IG < 0

IG > 0

IG < 0

(Dng vo)

(Dng ra)

(Dng vo)

(Dng ra)

Dng t
MT1 MT2

Dng t

Dng t

Dng t

MT1 MT2 MT1 MT2

MT1 MT2

Trong 4 kiu hot ng trn, th kiu I+ l nhy nht (dng kch nh

nht), kiu II- l nhy va , kiu II+ l chm nht.

25

Chng 1: M u

Th d: Vi TRIAC ta thng c: Kiu I+: IG = 30mA; Kiu II-: IG = 40mA; Kiu I-: IG = -70mA; Kiu II+: IG = 90mA. Vi Triac 40668 ta c:
IG = 10mA (I+); -15mA (II-); -20mA (I-); 30mA (II+).

c tuyn Triac

Hnh 1.24
Triac l linh kin c c tnh dn in c 2 chiu trong in AC. Hin
nay Triac ch hot ng vi dng ln nht < 500A, VBR < 1000V v tn s f
< 400Hz. c tnh cng ca Triac tng t nh kho st SCR.

Cc cch kch
V Triac dn trong c 2 chiu nn cch kch bng in DC t thng dng
hn cch kch bng in AC v bng xung.

Kch bng in AC

Kch bng xung

Mch to xung c to nn t UJT, IC 555, mch s, Flip flop,

nhng c bit vn l mch dng DIAC
ci tin, ta dng mch thi hng i cho mch kch v mch h tr
cho Triac
c.

MCT (Mosfet Controlled Thyristor)

khc phc cc nhc im ca SCR (tc giao hon chm) v
cng sut thp ca MOSFET, ngi ta sn xut linh kin kt hp khc phc
c 2 nhc im trn thnh mt linh kin c gi l MCT
MCT c cu to kt hp cng ngh ca thyristor vi u im tn hao

26

Chng 1: M u

dn in thp v kh nng chu p cao v ca MOSFET vi kh nng ng

ngt nhanh.

Cu to

Hnh 1.25
MCT l linh kin kt hp gia c tnh tc ng nhanh v cng sut ln
ca Transistor vi in th iu khin ln cc cng ca MOSFET. C hai
loi MCT: N-MCT v P-MCT, c c l do cch ghp ca 2 MOSFET
lm cng nh hnh 1.26

Hnh 1.26
Hnh 1.27 m t cu trc ct ngang ca mt MCT, trong MOSFET
c tch hp trong cu trc ca SCR thc hin iu khin qu trnh
ng v ngt linh kin ny. MCT c iu khin qua cng MOS. Trong
cng nghip thng xut hin cc MCT loi p. K hiu v c tnh ca
MCT c m t trn hnh 1.26
kch dn MCT, xung in p m c a vo gia cng gateanode. iu ny dn n vic ng On- FET (p-FET), trong khi cng
off-FET (n-FET) vn b kha v kch thch lp cng m -emitter ca
transistor npn Q1. Transistor Q1 v Q2 sau chuyn sang trng thi dn
in
ngt MCT, in p cng gate anode chuyn sang gi tr dng.
iu ny lm Off-FET Q4 dn in v lm ni tt mch emitter lp m
ca transistor Q2. Transistor Q2 v th b tt lm MCT b ngt

27

Chng 1: M u

MCT t st p thp khi dn in nh GTO v thp hn c IGBT.

Phng php iu khin dng xung in p nh MOSFET, IGBT. Mch li
n gin hn so vi GTO v khng i hi xung dng in m kch cng.
Tc ng ngt ca MCT nhanh hn so vi GTO. V th, MCT ang dn
tr thnh linh kin iu khin ngt l tng cho cc ti c yu cu st
p thp, tn hao thp v ng ngt nhanh. Kh nng dng in ca MCT
nh hn so vi GTO

c tuyn ca MCT
MCT c c tuyn nh SCR c in v khng dn in th nghch
hnh 1.27

Hnh 1.27

Kh nng chu ti ca MCT

MCT c p dng cho cc trng hp yu cu in tr v t cm
nh vi kh nng chu c dng in ln v di/dt cao. MCT c kh nng
chu c tng dng in 1.400kA/
v gi tr dng nh 14kA, tnh
2
qui i trn din tch l 40kA/cm i vi xung dng in. Cc MCT c
ch to dng tch hp v d gm 4 n 6 linh kin (ThinPak).
MCT c s dng lm thit b phng np in cho my bay, xe t,
tu thy, ngun cung cp tivi. MCT cng c s dng lm cng tc
chuyn mch mm (Soft switching) trong cc mch dao ng cng hng
(Auxiliary Resonant Commutated Pole). Kh nng chu di/dt cao v dng
ln cn m ra hng pht trin dng MCT ch to cc my ct vi u
im gn nh, gi thnh h v p ng nhanh so vi cc my ct bn dn
hin ti. MCT dng tch hp (ThinPak) cn c s dng trong cc h
truyn ng my ko trong giao thng vn ti.
MCT thng hot ng vi tr s sau

28

Chng 1: M u

Vi P-MCT ca hng Harris c: VBO = 600V, IAmax = 75A, dng nh c

th t 120A, di/dt = 2000A/ s , C kh nng khi dn nhanh nht. Kch
cng: xung m khi dn, xung dng khi ngng
Ngc li, vi N-MCT: in th 2 u MCR khi dn VON rt b vo
khong 1V
Ch : N-MCT lc u t c sn xut hn P-MCT
d.

GTO (Gate turn off Thyristor)

C cu to phc tp hn SCR c in c th tt SCR ang dn
bng cch cho xung m vo cc G (m trc lm SCR dn bng cch
xung dng vo G) hnh 1.28

Hnh 1.28
GTO c cu to gm bn lp pnpn tng t vi thyristor thng
thng (SCR)- hnh 1.28, vi cc tnh nng tng t ca thyristor vi
im khc bit l c th iu khin ngt dng in qua n. Mch tng
ng GTO c v trn hnh 1.28 c cu trc tng t mch m t SCR
nhng c thm cng kch ngt mc song song cng kch ng. K hiu
linh kin GTO v trn hnh 1.28. Cu trc thc t (loi GTO i xng)
hnh 1.28
GTO c kch ng bng xung dng in tng t nh khi kch
ng thyristor thng thng. Dng in kch ng c tng n gi tr IGM
v sau gim xung n gi tr IG. im khc bit so vi yu cu xung
kch ng SCR l dng kch iG phi tip tc duy tr trong sut thi gian
GTO dn in.

29

Chng 1: M u

Hnh 1.29
M GTO nh hnh 1.30

Hnh 1.30
ng GTO hnh 1.31

Hnh 1.31
kch ngt GTO, xung dng in m ln c a vo cng G
cathode vi dc (diGQ/dt) ln hn gi tr qui nh ca linh kin, n y
cc ht mang in khi cathode, tc ra khi emitter ca transistor pnp v
transistor npn s khng th hot ng ch ti sinh. Sau khi transistor
npn tt, transistor pnp cn li s hot ng vi cng kch ng trng thi

30

Chng 1: M u

m v linh kin tr v trng thi khng dn in. Tuy nhin, dng in yu

cu mch cng G tt GTO c gi tr kh ln. Trong khi xung dng in
cn a vo cng kch ng GTO ch cn t gi tr khong 3-5%, tc
khong 30A vi rng xung 10s i vi loi linh kin c dng nh mc
1000A th xung dng in kch cng ngt GTO cn t n khong 3050%, tc khong 300A vi rng xung khong 20-50 s. Mch cng phi
thit k c kh nng to xung dng kch ti thiu t cc gi tr yu cu trn
(IGQM). in p cung cp mch cng to xung dng ln va nu thng
c gi tr thp, khong 10-20V vi rng xung khong 20-50 s, nng
lng tiu tn cho vic thc hin kch ngt GTO khng cao. Qu trnh in
p v dng in mch anode v mch cng khi kch ng GTO v kch ngt
n c m t trn hnh 1.30 v hnh 1.31. Nng lng kch ngt GTO
nhiu gp 10-20 ln nng lng cn cho qu trnh kch ng GTO. im
bt li v mch kch ngt l mt nhc im ca GTO khi so snh n vi
IGBT. H qu l thi gian ngt dng in ko di, kh nng chu di/dt,
dv/dt km, mch bo v khi kch ng v kch ngt lm tng chi ph lp t
cng nh lm cng sut tn hao tng ln. Do kh nng kch ngt chm nn
GTO c s dng trong cc b nghch lu iu ch rng xung (PWM)
vi tn s ng ngt thp. Tuy nhin, iu ny chp nhn c trong cc
ng dng cng sut ln. Mch iu khin kch ngt GTO c gi thnh
tng ng gi thnh linh kin.
st p ca GTO khi dn in cao hn khong 50% so vi thyristor
nhng thp hn 50% so vi IGBT vi cng nh mc. GTO c kh nng
chu ti cng sut ln hn IGBT v c ng dng trong cc thit b iu
khin h thng li in (FACTS Controller) n cng sut vi trm MW.
GTO c chia lm hai loi - loi cho php chu p ngc
(symmetrical), v loi ni tt anode (anode short GTO thyristor) ch c
kh nng kho p thun tr s ln. Loi th nht c cu trc ging nh
SCR, c kh nng chu c p kha v p ngc vi gi tr ln gn nh
nhau. Lai th hai- GTO c anode ni tt, c mt phn lp J1 b ni tt nh
lp n+ hnh 1.28. Do , kh nng kha p ngc ca lai GTO ny km,
bng kh nng chu p ngc ca lp J3 (khong di 15V). Tuy nhin, b
li, cu to ca n cho php t c kh nng chu p kha v dng in
ln cng nh kh nng gim st p khi dn in v n thch hp cho cc
ng dng i hi tn s ng ngt ln nhng khng cn kh nng chu p
ngc cao (chng hn cc b nghch lu p). tng cng hiu qu s
dng, cc GTO cn c ch to vi diode ngc tch hp trong linh kin
(reverse conducting GTO Thyristor hoc asymmetric GTO). Cu to linh
kin gm phn GTO c anode i xng v phn gi l diode phc hi

31

Chng 1: M u

nhanh (fast recovery diode), cho php linh kin dn dng in ngc m
khng cn lp t diode ngc ngoi linh kin, lm gim kch thc v
khi lng mch in s dng GTO
Linh kin GTO cn phi c mch bo v. Qu trnh ngt GTO i hi
s dng xung dng kch rng. iu ny dn n thi gian ngt di, kh
nng di/dt v dv/dt ca GTO thp. V th, cn phi gii hn cc tr s hot
ng khng vt qu gi tr an ton trong qu trnh ngt GTO. Hnh 1.33
v mch bo v GTO trong qu trnh ngt. T in C dng bo v GTO
trong qu trnh kch ngt phi c gi tr in dung ln hn gi tr qui nh
ca nh sn xut, t n ln khong vi F. Ngoi ra, GTO i hi
mch bo v chng hin tng tng nhanh dng in khi ng.

Hnh 1.32
Diode ca mch bo v phi c kh nng chu dng ln bi v trong
qu trnh s xut hin dng c bin ln qua diode v t in. in tr
mch bo v c tr s nh v m bo t x in hon ton trong khong
thi gian ng ngn nht ca GTO khi vn hnh. Khi GTO ng, nng
lng tch tr trn t s phi tiu tn ht trn in tr ny. V th, gi tr
nh mc cng sut ca in tr kh cao.
Mi GTO c mt gi tr dng c iu khin cc i m nu vt qu
th khng th ngt n bng xung dng ngc cng Gate. Nu trong qu
trnh vn hnh b bin i cng sut s dng GTO nh linh kin ng ngt,
s c c th xy ra (v d nh ngn mch) gy nn hin tng qu dng, h
thng bo v phi c thit k nhn bit s c v ngt GTO bo v
linh kin. Nu nh gi tr dng qua GTO khi s c xy ra thp hn tr s
dng cc i th c th ngt GTO bng xung dng cng m iu khin vi
bin thch hp. Nhng nu gi tr dng s c vt qu gi tr bo v
bng xung dng m, cn s dng mch bo v kiu n by (gm kha
cng sut mc song song vi linh kin GTO). Nguyn l hot ng ca
mch bo v l to ngn mch ngun cp in cho GTO bng cch kch
ng mt SCR mc song song vi linh kin GTO. Dng ngn mch lm

32

Chng 1: M u

chy cu ch v ct linh kin GTO khi ngun

Trong nhng nm gn y, GTO tr thnh linh kin ng ngt c s
dng rng ri cho cc mch cng sut ln: mt GTO loi ni tt anode c
gi tr nh mc p khong 4500V v nh mc dng 6000A. Cc gi tr
tng ng ca loi GTO cho php dn dng ngc l 4500V v 3000A
(Mitsubishi 1998). in p t trn GTO khi dn in thng cao hn SCR
(2-3V). Tc ng ngt t vi s n 25s. Tn s ng ngt khong
100Hz n 10kHz
Linh kin cng sut s tr nn cht lng cao nu cho st p thp khi
dn in (nh thyristor), yu cu mch iu khin n gin v kh nng
ngt dng nhanh (nh IGBT). Hin nay, mt s linh kin nh vy xut
hin trn th trng v chng c kh nng thay th dn GTO. Chng c th
xem l nhng dng ci tin ca GTO, ch to theo nguyn l khi tch hp
(Power Electronics Building Block- PEBB) nhm gim bt cc yu cu v
mch kch v lm tng kh nng ngt nhanh. Cc linh kin ny gm MTO
(MOS Turn-Off Thyristor), ETO (Emitter Turn-Off Thyristor) v IGCT
(Integrated Gate-Commutated Thyristor)
e.

IGCT (Integrated Gate-Commutated Thyristor)

Cu to v chc nng
S ci tin cng ngh ch to GTO thyristor dn n pht minh
cng ngh IGCT.
GCT (Gate Commutated Thyristor) l mt dng pht trin ca GTO vi
kh nng ko xung dng in ln bng dng nh mc dn qua cathode v
mch cng trong GCT m bo ngt nhanh dng in. Cu trc ca
GCT v mch tng ng ca n ging nh ca GTO.
IGCT l linh kin gm GCT v c thm mt s phn t h tr, bao gm
c board mch iu khin v c th gm c diode ngc.
kch ng GCT, xung dng in c a vo cng kch lm ng
GCT tng t nh trng hp GTO.
kch ngt GCT, mi ni pn base-emitter c phn cc ngc bng
cch cung cp in p ngun ngc chiu. iu ny lm trit tiu dng
in qua cathode v ton b dng in i qua cathode s c y sang
mch cng vi tc rt nhanh v bin GCT tr thnh mt transistor pnp.
c th to dng in qua mch cng tng nhanh v ln, GCT
(IGCT) c ch to c bit gim cm khng mch cng (mch vng
cng iu khin cathode) n gi tr nh nht.

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Vn mu cht ca GCT l to kh nng tng nhanh dng in qua

cng. iu ny t c bng ng dn in ng trc qua mch cngcathode v cng ngh mch iu khin nhiu lp (multilayer). Chng cho
php dng cng tng vi tc 4kA/V khi in th cng- cathode mc
20V. Trong thi gian 1 s , transistor npn ca GTO b ngt hon ton v
cc cng ca transistor pnp cn li b m lm GCT b ngt. Do vic ngt
thc hin bng xung dng rt ngn nn cng sut tn hao mch cng c
gim n mc ti thiu. Cng sut tiu th ca GCT gim i khong 5 ln
so vi trng hp GTO
Lp p pha anode c lm mng v lm giu ht mang in cht t
cho php kh cc ht mang in pha anode nhanh hn trong thi gian
+ ngt. IGCT c th tch hp diode ngc bng mi ni n n p c v trn
hnh 1.33. Diode ngc cn thit trong cu to ca cc b nghch lu p
A

G
K

Hnh 1.33

Hnh 1.34
Qu trnh ngt dng in ca IGCT bi tc dng xung dng kch cng
c v minh ha trn hnh 1.35. c th so snh vi qu trnh ngt dng
ca GTO, th ca dng cng c v cho hai trng hp

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Chng 1: M u

Hnh 1.35

Kh nng chu ti
u im chnh ca IGCT th hin cc mt sau:-kh nng chu p
kha cao n 6kV ( d kin s tng ln n 10kV) vi tin cy cao; tn
hao thp khi dn in bi c kh nng dn nh thyristor; kh nng gii hn
dng ngn mch s dng mch bo v cha cun khng hn ch di/dt
(turn on snubber) v gi thnh thp do tn dng cng ngh silicon vi mc
tch hp nng lng cao.
Cc thit b s dng IGCT c cng sut thay i trong khong 0,3 n
5MW cho cc ng dng truyn ng in ni chung, n 5MW cho thit
b n nh in p (Dynamic Voltage Restorer), ngun d phng (Dynamic
UPS) v my ct, n 20MW i vi cc truyn ng c bit, 25MW i
vi mch siu dn t SMES (Supermagnetic Energy Storage) v 100MW
cho thit b truyn ti in (interties).

Tng kt
Kh nng hat ng ca cc linh kin bn dn cng sut c so snh theo
hai kha cnh cng sut mang ti v tc ng ngt c minh ha hnh
1.36 da theo s liu tra cu nm 98-99 ca hng EUPEC
Linh kin GTO cng sut ln c sn xut vi kh nng chu c in
p/ dng in t 2,5-6kV/1-6kA. GTO cn c ch to cha diode ngc vi
tn hao thp, kh nng chu in p/ dng in ca n t n 4,5kV/3kA
Linh kin IGCT c ch to gn y c kh nng chu c in p/
dng in 6kV/6kA vi kh nng chuyn mch gn nh ton b dng in sang
mch cng khi kch ngt. Cm khng mch cng gim n 1/100 so vi loi
GTO thng thng, cho php tc tng dng in cng khi kch ngt n
diGQ/dt=6.000A/ . Thi gian lu tr ts gim cn khong 1/10 so vi ca
GTO. Cc tnh cht cho php GCT rt thun tin khi mc song song hoc ni
tip v kh nng iu khin ng ngt cng sut ln ngay c khng s dng
mch bo v.
Cc diode cho nhu cu thng thng c ch to vi kh nng chu

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Chng 1: M u

c in p thay i t 500V n 4kV v dng in t 60A n 3,5kA. i

vi nhu cu ng ngt nhanh kh nng dng t n 800-1.700A v in p
2.800-6.000V
Cc thyristor cho nhu cu thng thng c ch to vi kh nng chu
c in p thay i t 400V n 12kV v dng in t 1000A n 5kA. i
vi nhu cu ng ngt nhanh, kh nng dng t n 800-1.500A v in p
1.200-2.500V
Cc linh kin IGBT dng modul c ch to vi kh nng chu c in
p/ dng in 1,7-3,3kV/400-1.200A. Kh nng chu in p cao ca IGBT
(HVIGB module) gn y t n 6kV. Cc linh kin ch to dng modul to
thun li cho vic lp t, kt ni mch v lm gim kch thc, trng lng ca
h thng cng sut.

Hnh 1.36

36