TOSHIBA MG1200V1US51 TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES © High Input Impedance Enhancement Mode © Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS SYMBOL | RATING —_| UNIT Collector Emitier Voltage VoEs 7700 v Gate-Emitter Volta Vans 20 Vv DC Te 7200 lector Curren A Collector Current = te 00 DC Ip 1200 Forward Current = ine am A Collector Power Dissipation (Te=25°O) PC. 5560 Ww [Junction Temperature Ty =20~ 135 °C. Storage Temperature Range Tog =40~125 °C Tsolation Voltage Visol | 8400(AC imin) [_V [Terminal : Ma7Mé 27 Serew Torawe itvonting - 7 Nm 261001648 @ TOSHIBA is continually working to Improve the quality and the reliability of fs products. Nevertheless, semiconductor devices in general can malfunction or Tail due to thelr inherent electrical sensitivity and vulnerability to physical stress, it's the responsibilty of the buyer, when utlzing TOSMIBA products, to observe standards of safety, and to avoid Situations In which @ malfunction or failure of @ TOSHIBA. product could. cause loss of human life, bodily injury oF damage tO property. In developing your designs, please ensure thet TOSHIBA products are’ used within spectfieg foperating ranges. os set forth in the most recent’ products specifications. Also, please keep in mind ‘the precautions hd conditions set forth in the TOSHiaA Semiconductor Relablity Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA. CORPORATION for ary infringements of intelectual property or ‘other rights of the third Darties Which may result from its use. No license Is granted by Implication of otherwise under any intelectual roperty or other fights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice T998-10-23 1/4TOSHIBA MG1200V1US51 ELECTRICAL CHARACTERISTICS (Te= 125°C : except thermal resistance) CHARACTERISTICS SYMBOL TEST CONDITION min. | Typ. |Max.|UNrT| (Gate Lackage Current Tens __|Vqn=£20V, VoR=0v = [= | 250] aa Collector Cut-Off Current Tees __|Vcg=1700V, Vop=0V = [= | 100} ma Gate-Emitier CutOm Voltage | Vap(om |VcE=5V, Io=1.24 30) Tol V Collecter-Emitter Saturation Voltage Vor (sat) |VGE=15V, I¢=1200A —|—| so} v a ‘ane \VcE=10V, VaE=0V, 2 Input Capacitance Cies Ie eoutie — | 130) — | aF te Vec=900V, 1¢=1200A = [= [07] Gs Switching Time [Turn-On Time | ton Van=+15V, Rg=180 == 10] es (Note 1) [Fall Time te \(nductive load : Ls = [= [eal ps Turn-Of Time [off = sles Forward Voltage VE == [3e2lv Reverse Recovery Time (Note 1) | ter — | — | 08) ps ‘Switching ‘Turn-On Loss_|Eon = [250 | — | mar issipation Turn-OfF Loss| Koff VGE=+15V, Rg=180 = [500 | — [mr (ote 1) Diode Loss |Edsw —‘[Ip=1200A, Vqu=—15V lai/at=4000A/ 8, Voc=900v| — | 80] — | ™ [Transistor (IGBT) Stage = [= |oorsPerw] Thermal Resistance Rin Ipiode Stage >To horwl 7998-10-23 2/4TOSHIBA MG1200V1US51 (Note 1) Test circuit and timing chart of switching time, reverse recovery time and switching dissipation. 7998-10-23 3/4TOSHIBA MG1200V1US51 OUTLINE DRAWING Unit : mm ‘Weight : 900g (Typ.) T998-10-23 4/4