Mach han mic kiéu néi tigp Kieu han mize Diot Iy tong (Up, = 0) Diot thuc (Loai Si Up = 0,7¥) Bang 2. 1/ Han ché mite dui ~ Han ché mie duéi dvong = Han ché mite dus am 2/ Han ché me tren Han ch mae ten dung D «4 R vu Ay va | o - | o re t = Han ch€ mie trén aim D —“4<+___—_- uy, ne — | UU ‘Bang 2-3b: Mach han mic kiéu song song Kigu han mic Diot iy tong (Up, = 0) Diot thuc (Loai Si Up, = 0,7¥) 661/ Han ché mite duéi ~ Han ch€ mie duéi dvong 2/ Han ché méc tren ~ Haan ché mae trén dmg, R Un Un 07V ‘ os oy iy E ¥ o t t ~ Han ché mite tren am 3/ Han ché tren - dus = Han ché tren - duéi ding iot thyme R u, D D, or= Han ché ten ~ du6i dang Biot Zener Unt} 44 t Un 2.14.3 Mach dich mic (Clamper) Mach dich mite 18 mach ¢6 dita thém thinh phn mét chiéu (DC) vio tin higu xoay chiéu (A) ‘Mach dich mie cdn 6 tén goi la mach khoi phuc thanh phn mot chiéu. Nguyén tic hoat dong cia mach dya trén si nap dign cia ty, va hinh thinh mot dién dp mot chiéu trén tu C, C6 hai loai mach dich mite: Dich mie duong (hinh 2-84) va dich mii am (hinh 2-85), vu aw o i \ vu, Pe i t 1 Un 2 -0,7V c a0. | re wtf kp de wae foo - 0. o- ~ ‘ x i 8) Mach dich mite duung ) Dang dign sp ra 8-5 Dang din ip ra (Diot ly tuéng) (Diot thuc loai Si) Minh 2-84: Mach dich me dang w ° ‘ 4 =U L Pb ogy ° ° fi t * t wu w, “Uns fee ’ ube ofp ¥p Oe a) Mach dich mde am b) Dang dign ép ra ©) Dang dign 4p ra 68TADLE €.1 Relative Levels for the Important Parameters of the CE, CB, and CC Transistor Amplifiers figuration Z Z Ay A Fined bias: oy Medium (10) | Medium (2x8) | High (=200) igh 100) Ruler. Rare edb] | _ rs re | | 7] eto BD 2 Z (n= OR, (STOR Ry = 108%) Votagevider Medium (1k) | Medium @ KA) High (60 a Re ag =| rill. Rare BRR. re Tet Rents + Re wg (= 10K) -| A las BZ aCe Rik + Bre TR Unbypesed 9c igh (10042) | Medium 24) Law 8) High (50 center bis: he Ry Rilzs Re Re Bis 2, B07 Re Gayle ze Mte ofr) =| eae _ [ke he ar) Be a> titer . pm ec igh (100 Low (20.9) Low (= 0) is Riles Rik. Re K 2 |e i “| fi Re or) Ow Common. Low 20.0) | Med @ 0) tow“) aa -[fe jm =[- Rs Re ve es Yee elk T = Ccollsor y, Medio (140) aun High (5 Cote Yee Metism (142) | Medium (2&8) ih 50) Re By = [rare _ [te | te Re ae =l Te ik PE = 108 BOR 20RD Be Ro) Be Re 8.12 Troubleshooting 3838m TABLE 9.1 Z, Zo, and A, for various FET configurations Configuration * FET or D-MOSFET) 7 » fedium (— 10) sig 0 ty - me Feel % = fee = [paeho|, = 10, _ ‘e = [Rp ‘= (r= 10.8) Low 2) Tr askst YR ako fo 6, nigh aon) | = [rex E-B] eke rE = _ Ro | ot Roorrs maf. amas FET of D-MOSFET 4 Medium @ 49) Mediun (=10) a a re Re = [Fentrdor i} % = [file z “ =([R = [ret z nT een love 089 9.13 Summary Table 437Sm TABLE 9.1 (Continued) Configure z A=¥ See we URET or D-MOSFET] Low (1002) igh (10 MN) = | rARslien =| Tecra Re = Lilt Joy = 10m =| ees Tats Comicon ge URET er DMOSPET) Medi (242) Medium (+10) Low a0) . es oe ¢ a G =| afte Ro - * = Ro lege wR Te Bes =z =| Rte Me T° vente = | eek or, = 0K) Doe iar EMosre Metin (1 MA) po ‘Medium (2k) ‘Medium (—10) be G - Rall = Fence nt > Re Ro - ~enko Voge ar Moser . Metin 249) Medi (10) e G Medium (1 M&t) "of Vo = | Roles —EmlralRo) ¢ = = [ite 5 . =[% Jewry = [- ea 438 Chapter 9 FET Small-Signal Analysis