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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
Invited Paper
I. INTRODUCTION
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wavelength-division multiplexers (WDMs), etc., are now available for splicing easily into all fiber configurations. In addition,
fiber-pigtailed bulk-optic couplers are also now commercially
available with full high-power reliability qualification mainly
based on epoxy-free technologies. A spliced-together fiber
amplifier configuration is much more resistant to environmental
disturbances than its bulk-optical counterpart. Thus, an up
to 100-fold increase in pump power combined with up to a
ten-fold increase in Raman gain coefficient leads to a renewed
interest in Raman amplification in an all-fiber configuration.
A. Sources of Noise in Raman Amplifiers
(a)
(b)
Fig. 1. (a) Raman gain curve in fused silica fiber for copolarized pump and
signal beams. Inset shows an energy level diagram representative of the Raman
process, which takes a higher energy pump photon and splits it into a lower
energy signal photon and a phonon. (b) Normalized Raman gain coefficient for
copolarized and orthogonally polarized pump and signal beams.
There are four primary sources of noise in Raman amplifiers. The first is double Rayleigh scattering (DRS), which corresponds to two scattering events (one backward and the other
forward) due to the microscopic glass composition nonuniformity. Amplified spontaneous emission (ASE) traveling in the
backward direction will be reflected in the forward direction by
DRS and experience gain due to stimulated Raman scattering.
This in addition to ASE experiencing multiple reflections, will
degrade the signal-to-noise ratio (SNR). Furthermore, multipath
interference of the signal from DRS will also lower the SNR.
DRS is proportional to the length of the fiber and the gain in the
fiber, so it is particularly important in Raman amplifiers due to
the long length of fiber, where lengths of several kilometers are
typically required. From a practical viewpoint, DRS limits the
gain per stage to approximately 10 to 15 dB. Higher gain amplifiers can be obtained through the use of isolators between the
multiple stages of amplification. For example, a 30-dB discrete
Raman amplifier has been demonstrated with two stages of amplification and a noise figure less than 5.5 dB [4].
The second source of noise arises from the short upper-state
lifetime of Raman amplification, as short as 3 to 6 fs. This virtually instantaneous gain can lead to a coupling of pump fluctuations to the signal. The usual way of avoiding this deleterious
coupling is to make the pump and signal counterpropagating,
which has the effect of introducing an effective upper-state lifetime equal to the transit time through the fiber. If copropagating
pumps and signals are to be used, then the pump lasers must be
very quiet. That is, they must have a very low so-called relative intensity noise (RIN). For example, copropagating pumps
use FabryProt laser diodes instead of grating-stabilized laser
diodes [5].
A third primary source of noise in Raman amplifiers is the
usual ASE. As is typical for reasonable signal power levels,
signalASE beating noise dominates over ASEASE beating
noise. Fortunately, Raman amplifiers have inherently low noise
from signalASE beating because a Raman system always acts
as a fully inverted system. For example, the ASE power spectral
density can be written as
where
is the upper state population and
is the lower state
term is
population. For Raman amplifiers, the
always equal to one, whereas in EDFAs it is usually greater than
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
one [6]. In an EDFA, this term is only equal to one for an amplifier fully inverted through the entire length of gain fiber. On the
other hand, since Raman amplifiers use long fiber lengths, the
small fraction of passive loss of the gain fiber needs to be added
to the noise figure. Nonetheless, discrete Raman amplifiers with
noise figures as low as 4.2 dB have been reported [7].
Finally, a fourth source of noise arises from the phonon-stimulated optical noise created when wavelength signals being amplified reside spectrally close to pump the wavelengths used for
amplification. In other words, at room or elevated temperatures
there is a population of thermally induced phonons in the glass
fiber that can spontaneously experience gain from the pumps,
thereby creating additional noise for signals close to the pump
wavelengths. It has been shown that this effect can lead to an
increase in noise figure of up to 3 dB for signals near the pump
wavelength [8], [20].
B. Raman for DWDM Long-Haul Systems
Raman amplifiers provide a simple, single platform for
long-haul and ultralong-haul amplifier needs. Raman amplifiers are broad-band and wavelength agnostic. For example,
gain bandwidths of up 100 nm have been demonstrated [9],
[10], [21][25], and the 100 nm can fall anywhere in the
transparency window between roughly 1300 and 1650 nm
typically used in fiber-optic communications. Moreover,
recently a broad-band Raman amplifier with a bandwidth
of 136 nm has been demonstrated using a pump-and-signal
wavelength-interleaved scheme, where stop bands surround the
pump wavelengths that are within the signal band [26]. Raman
amplifiers can be distributed, lumped or discrete, or hybrid [25],
[27][32], [37]. Thus, either Raman amplifiers can serve only
as low-noise preamplifiers for rare-earth-doped fiber amplifiers, or they can meet the full amplifier needs in all-Raman
systems. Also, in Raman amplifiers, the amplification and
dispersion compensation can be combined in the same fiber
length [20], [33][35], [38]. The dispersion compensating fiber
ends up having net gain rather than loss, which leads to a wider
system margin and the ability to insert other elements such as
optical ADDDROP multiplexers into the system.
In the dense WDM long-haul and ultralong-haul fiber-optic
system markets, Raman amplifiers should win out as the dominant form of amplifier because of their simplicity and flexibility. As an example, suppose that a 100 nm wideband system,
which overlaps the -, -, and -bands, is to be developed.
If the system were to mimic todays systems, then band combiners and band splitters would be used around three discrete
amplifiers [Fig. 2(a)]. Also, an additional triband DRA would
be used for low-noise preamplification. Each of these amplifiers
would require their own pump lasers, control circuitry, monitoring system, and gain equalization. In addition, a separate dispersion compensation fiber would be typically used in each discrete amplifier. Moreover, because wideband filters cannot have
abrupt spectral profiles, several nanometers of guard band wavelengths need to be reserved around each band [Fig. 2(c)]. Also,
a system margin of typically 3 dB or more has to be reserved for
the additional insertion loss from the band couplers.
In comparison, consider an all-Raman solution for the
100-nm wideband system. The amplifier configuration would
simplify to something like Fig. 2(b), where a broad-band DRA
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(a)
(b)
(c)
Fig. 2. (a) A typical 3-band amplifier configuration using multiple discrete amplifiers along with a triband DRA. (b) An all-Raman amplifier using a wideband
DRA followed by a single, wideband lumped, or discrete Raman amplifier. (c) The systems are not equivalent as an all-Raman system offers more bandwidth
through a single band without penalties from the obligatory guard bands.
0.472 dB/km, the length of the gain fiber is 5.64 km, and the
Raman gain coefficient is 13.5 dB/(W km). For the EDFA
curves, it is assumed that the amplifier is forward pumped by
either a 980- or 1480-nm pump. The passive loss in the EDFA
is assumed to be 0.15 dB/m, and the length of the coil (20 m) is
optimized to give maximum signal output power when pumped
with 750 mW of 1480-nm pump for 20 mW of input power.
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
(a)
(b)
Fig. 3. Raman amplifiers surpass the power conversion efficiency of EDFAs at the higher power levels brought about by future high capacity long reach systems.
A Raman amplifier is compared with a 1480-nm pumped EDFA and a 980-nm pumped EDFA. The signal input power is assumed to be 20 mW. (a) Signal output
power versus launched pump power. (b) Power conversion efficiency versus launched pump power.
Fig. 4. DRAs utilize the transmission fiber in the network as the Raman gain
medium to obtain amplification. Typically, high power, counterpropagating
Raman pumps are deployed in conjunction with inline discrete amplifiers such
as EDFAs.
the SNR improvement can be thought of in terms of an equivalent amplifier spacing. Assuming that the original amplifier sites
are spaced by 80 km, using an optimally pumped DRA gives
the performance as if the discrete amplifiers were spaced between 35 to 38 km. Thus, DRAs give an equivalent performance
of much closer spaced amplifiers, giving a very attractive economic incentive for their use.
There are many examples from the literature that show the advantages of using DRAs in transmission systems. DRAs can be
used to achieve longer amplifier spans or higher bit rates. These
take advantage of the improvement in SNR. Alternately, DRAs
can be used to achieve closer channel spacing or operation near
the zero dispersion wavelength. These improvements take advantage of the reduction in nonlinear penalty by using DRAs.
Several experiments have shown that longer amplifiers spans
can be used with the DRA. Terahara and coworkers employed
a dual-band DRA technique to the -band and -bands for
the first time to long-haul WDM transmission systems [12]. In
particular, they transmit 1.28-Tb/s WDM signals over a 840-km
standard SMF with a 140-km repeater spacing. In comparison,
the typical amplifier spacing in a link is about 80 km. The
dual-band DRA effectively improves the OSNR by 3.7 dB in
the -band and by 4.3 dB in the -bands. Garrett, et al., also
did a field demonstration of DRA with 3.8 dB -improvement
for 5 120-km transmission compared with just using discrete
10-Gb/s
EDFAs [13]. They demonstrate a DRA in an 8
WDM experiment with five 120-km spans incorporating 40 km
of installed, older vintage fibers. At the optimum pump power
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
(a)
(b)
Fig. 6. (a) Effective Rayleigh reflection coefficient versus distributed Raman
fiber length as calculated for a dispersion-shifted fiber. A discrete Raman
amplifier is typically under 15 km, while a DRA is at least 40 km long. Curves
are shown for no pump power (lowest curve), 400, 600, and 800 mW (highest
curve) of pump power. (b) Effective Rayleigh reflection coefficient versus
pump-on/pump-off gain for a DRA implemented in standard single-mode fiber
(SMF-28) and a discrete amplifier implemented in dispersion compensating
fiber (DK fiber). The length of the DK-40 is 6.5 km, while the length of the
DK-80 is 13 km.
Fig. 7. Lumped or discrete Raman amplifiers have the pump power confined to
the gain fiber in the amplifier box. Counterpropagating pump power is confined
within the unit via isolators.
coefficient in the DCF, the DRS penalty is higher for a given gain
level even though the fiber length is shorter. The simulations
assume a pump at 1451 nm, where the loss is 0.29 dB/km for
the standard SMF and 0.63 dB/km for the DCF. The signal is
assumed to be at 1550 nm, where the fiber loss is 0.25 dB/km in
the standard fiber and 0.49 dB/km in the DCF. The Raman gain
coefficient between the simulated wavelengths is 1.62 dB/(W
km) for the standard fiber and 13.5 dB/(W km) in the DCF.
The Rayleigh scattering coefficient at 1550 nm is 42.3 dB/km
for the standard fiber and 33.8 dB/km for the DCF.
In summary, the power and double Rayleigh scattering limits
may set some fundamental limits on system applications of
DRAs. There are indeed many practical issues related to having
an amplifier stretched across the country. Despite all of these
challenges, DRAs are being used in almost every long-haul and
ultralong-haul transmission systems because of the SNR and
nonlinear benefits.
IV. DISCRETE RAMAN AMPLIFIERS
Discrete Raman amplifiers refer to a lumped element that
is inserted into the transmission line to provide gain. Unlike a
DRA, all of the pump power is confined to the lumped element.
For example, Fig. 7 shows the typical setup for a lumped
Raman amplifier. In this particular case, counterpropagating
pump power is confined within the unit by the use of isolators
surrounding the amplifier. Compared with Fig. 4, no pump
power enters the transmission line.
The primary use for discrete Raman amplifiers is to open new
wavelength bands in fused silica fibers. For example, different
wavelength bands are illustrated in Fig. 8. EDFAs operate in
the -band, which stretches from 1530 to 1565 nm, and the
-band, which stretches from about 1565 to 1625 nm. There
is also the -band, which stretches from roughly 1480 to 1530
nm, which has at least as low loss as the EDFA bands. In adband extends from approximately 1430 to 1480
dition, the
nm. Earlier transmission systems were deployed in the 1310-nm
band, which can stretch between from 1280 and 1340 nm. There
is also a 1400-nm band, which is only useful in new fibers that
use special drying techniques to reduce the water peak absorption around 1390 nm. Thus, Raman amplifiers can be used to
open up wavelengths between about 1280 and 1530 nm, a wavelength range that is inaccessible by EDFAs.
Fig. 8. Several windows exist within the low-loss valley of typical fused
silica fibers. The solid curve corresponds to standard SMF, while the dotted
curve corresponds to fiber where additional drying steps are used to reduce the
water absorption peak near 1390 nm. EDFAs provide gain in the C -band, and
extended-band EDFAs can provide gain in the L-band. Raman amplifiers are
the only fused-silica-based technology for opening up the S and S -bands.
Fig. 9. Ring cavity analog Raman amplifier for gain in the 1310-nm band. The
counterpropagating amplifier corresponds to the lower part of the ring, while the
upper part of the ring corresponds to a Raman oscillator and wavelength shifter.
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
=
=
(a)
Fig. 12. Gain (upper curves) and noise figure (lower curve) versus wavelength
for (a) 14-dBm total input power and (b) 8-dBm total input power. The pump
power is varied between 18 and 27 dBm, and the gain ripple remains 1 dB
over the entire dynamic range. Also, the noise figure is 5.5 dB over the entire
-band.
(b)
Fig. 11. Block diagram of a two-stage S -band Raman amplifier. (a) Two
stages of gain fiber with counterpropagating pumping and midstage access. (b)
Polarization diversity pumping scheme using two lasers at each wavelength
that are polarization combined. The two pump wavelengths are then combined
using a wavelength-division multiplexer (WDM).
can be achieved with a very small gain ripple ( 1 dB), in addition to noise figure values on the order of 5.5 dB across the
-band (14931523 nm). The SLRA gain fiber has a high negative dispersion in the -band, as well as negative dispersion
slope, providing coarse dispersion and dispersion slope compensation throughout the band. Each SLRA compensates for
about 75 km of SSMF.
The setup block diagram is shown in Fig. 13. Eleven dispersion-compensating SLRAs were used to transmit 20 channels
in the -band (between 1493.36 and 1521.77 nm) nominally
spaced by 200 GHz and modulated at 10.67 Gb/s over ten spans
of SSMF, for a total length of 867 km. Each span contained on
<
557
Fig. 13. Block diagram of the experimental setup. Eleven dispersion-compensating SLRAs were used to transmit 20 channels in the S -band (between 1493.36
and 1521.77 nm) nominally spaced by 200 GHz and modulated at 10.67 Gb/s over ten spans of SSMF, for a total length of 867 km.
Fig. 14. Sketch of the dispersion map. The crosses and the legend show the
measured residual dispersion at the center and the two extreme wavelengths.
Fig. 16. Bit error rate (BER) performance versus OSNR, which is measured by
raising the noise floor of the spectrum while maintaining the peak signal power
constant. The inset shows the eye diagram for the most dispersive channel (#20).
Fig. 15. Received spectrum after the last amplifier stage. The average OSNR
(0.1-nm bandwidth) is 20.7 dB.
Similarly the channels did not suffer from FWM effect. Even
when five channels were spaced by 50 GHz, no FWM intermodulation product was observed down to 28 dB below the channel
level (Fig. 17). At the nominal launched channel power level
( 1 dBm), the self-phase modulation (SPM) appeared to be the
largest impairment aside from amplified spontaneous emission.
The estimated SPM penalty was less than 1 dB for any of the
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 3, MAY/JUNE 2002
Fig. 17. Output spectrum for five 10.67-Gb/s channels that are spaced by 50 GHz. The left curve is with all five channels on, and the right curve is with the center
channel off. No FWM intermodulation product is observed down to 28 dB below the channel level.
V. SUMMARY
There has been a revived interest in Raman amplification due
to the availability of high pump powers and improvements in
small core size fibers. Two general categories of Raman amplifiers are DRAs and lumped or discrete Raman amplifiers. DRAs
improve the noise figure and reduce the nonlinear penalty of the
amplifier, allowing for longer amplifiers spans, higher bit rates,
closer channel spacings, and operation near the zero-dispersion
wavelength. DRAs are already becoming commonplace in most
long-haul networks.
Discrete Raman amplifiers are primarily used to increase the
capacity of fiber-optic networks. Amplifiers have been demonstrated in the 1310-nm band, but this wavelength range suffers
from higher loss and more nonlinear penalty in standard SMFs.
For fibers with less water absorption, Raman amplifiers can also
be used in the 1400-nm band. The capacity of most fibers can
almost be doubled by opening up the -band, which is inaccessible by EDFAs. As an example, we described a novel -band,
long-haul WDM transmission, which uses a cascade of dispersion compensating -band lumped Raman amplifiers. Transmission is shown for 20 OC-192 NRZ channels over 867 km
of standard fiber.
Raman amplifiers provide a simple single platform for
long-haul and ultralong-haul amplifier needs. Raman amplifiers are broad-band and wavelength agnostic. Raman
amplifiers can be distributed, lumped or discrete, or hybrid.
Also, in Raman amplifiers the amplification and dispersion
compensation can be combined in the same fiber length. For
high channel count systems, as will be deployed in the next
few years, Raman amplifiers efficiency actually exceeds
even 1480-nm pumped -band EDFAs. Consequently, Raman
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