Nh th hin trong hnh 1, bi bo nghin cu lin kt khng dy im im vi

chuyn giao thng tin v nng lng ng thi. C my pht v my thu c trang b 1
anten n. Ti pha pht, tn hiu phc hp bng tn gc c th hin nh sau x(t) =
A(t)ej(t), trong A(t) v (t) biu th bin v pha ca x(t). Gi s x(t) l tn hiu bng
hp vi bng thng B(Hz) v E[|x(t)|2] = 1, trong E[.] v |.| thng k cc gi tr k
vng v gi tr tuyt i. Cc tn hiu bng tn RF truyn sau c th hin
s (t ) 2 P A(t ) c os(2 ft + (t )) 2 P{x(t )e j 2 ft }

Trong , P l cng sut pht trung bnh v P = E[s 2(t)], f l tn s sng mang v {.} biu
th phn s thc ca s phc ngi ta cho rng B

f.

Cc tn hiu c truyn i thng qua knh khng dy vi li knh h > 0 v lch

pha [0, 2). Do , tn hiu my thu nhn c
~

sh (t ) 2 P A(t ) c os(2 ft+ (t ) ) 2 P { h x(t )e j 2 ft }

~

Trong ,

h he j

th hin cc knh lin kt tng ng.

Gi s cc anten nhn hot ng bng tn tng t nh tn hiu truyn, nhiu n A(t) ti

anten nhn c th c m hnh ha nh nhiu Gaussian bng tn hp (vi bng thng B
v tn s trung tm f):
~

nA (t ) 2{ n A (t) e j 2 ft }
~

Trong ,

n A (t) nI (t ) jnQ (t)

vi

nI (t )

nQ (t)

th hin s ng pha v vung pha ca

ca cc thnh phn nhiu tng ng. V gi nh,

nI (t )

nQ (t)

l cc bin ngu nhin

Gaussian c lp (RVs) vi gi tr trung bnh bng 0 v phng sai

bi

N (0, / 2)
2
A

trong

N0 B
2
A

N0

A2 / 2

, c th hin

l mt ph nng lng nhiu 1 chiu. V

vy, ta c

n A (t) ~ CN (0, A2 )

bnh bng 0 v phng sai

l lin kt vng i xng Gaussian (CSCG) vi gi tr trung

A2

nh hng bi nhiu ca anten, tn hiu nhn c th hin nh sau

y(t) s h (t ) nA (t)

thun tin hn, ta c th vit li nh sau

y(t) 2{ y(t )}

vi tn hiu lin kt

y (t )

l:

y (t ) hPx(t )e j (2 ft ) n A (t)e j 2 ft

C. Energy Receiver:
Hnh 3 minh ha cc hot ng ca mt my thu nng lng in hnh c th chuyn i
nng lng RF trc tip thng qua cu trc rectenan [5]. Trong rectenna, tn hiu bng
tn RF thu c y(t) c chuyn i thnh dng tn hiu 1 chiu i DC(t) bi b chnh lu.
B chnh lu ny bao gm 1 diode Schottky v 1 b lc thng thp (LPF). Cc tn hiu 1
chiu iDC(t) sau c s dng sc pin lu tr nng lng. Vi in p u vo t l
thun vi y(t), dng ra i(t) ca diode Schottky c cho bi [6]:
i (t ) I S (e y (t ) 1) a1 y (t ) a2 y (t ) a3 y (t ) ...

Trong , IS l dng in bo ha, l nghch o in p nhit ca diode Shottky v cc

h s an c to bi
hm s m.

a n I S n / n !, n 1, 2,...

ty thuc vo khai trin chui Taylor ca

T (1), thun tin, ta vit li y(t) nh sau:

~

y(t) 2{ hPx(t )e j (2 ft ) n A (t)e j 2 ft }= 2 Y (t ) c os(2 ft+Y (t ))

Y (t ) arctan

Trong :

Q (t )
I (t )

Y (t ) I2 (t ) Q2 (t )

Vi

Q (t ) hP A(t ) sin( (t ) ) n Q (t))

I (t ) hP A(t ) c os( (t ) ) n I (t))

Bng cch thay th (7) vo (6) v b qua cc gii hn bc cao (ln hn 2) ca y(t) ta
c:

i(t) 2a1Y (t) c os(2 ft+Y (t )) 2a 2 Y2 (t) c os 2 (2 ft+Y (t ))

2a1Y (t) c os(2 ft+Y (t )) a 2 Y2 (t) a 2 Y2 (t) c os(4 ft+2Y (t ))

Dng in u ra i(t) ca diode c x l bi LPF. Thng qua , cac thnh phn iu

ha ti f v 2f trong i(t) c loi b v tn hiu DC iDC(t) coi nh l u ra ca chnh lu.
Gi s rng, cng nhiu c to ra bi b chnh lu l
li:

2
n rec (t ) ~ N (0, rec
), iDC (t )

c vit

iDC (t ) a 2 Y2 (t) n rec (t )

Vi a2 l 1 hng s c xc nh bi cc diode. thun tin ta gi nh a 2=1 (vi

n rec (t )

chun ha duy tr t l tn hiu trn nhiu (SNR)). Thay th (8), (9) v (10) vo
(12) ta c:
iDC (t ) ( hP A(t ) c os( (t ) ) n I (t))) 2 ( hP A(t ) sin( (t ) ) n Q (t)) 2 n rec (t )

Gi s rng nng lng chuyn i c lu tr trong pin l t l tuyn tnh vi

iDC (t )

[7]

0 1

vi hiu sut chuyn i

. ng thi cng gi s nhiu trong qu trnh thu thp
nng lng (bao gm c nhiu anten v nhiu do chnh lu) l 1 hng s nh nn c th
b qua. Do , cng sut trung bnh c lu tr trong pin (k hiu l Q(J/s)) c tnh
nh sau:
Q E[iDC (t )] hP

Lu rng, cng thc (14) c dng cho bt k tn hiu phn phi u vo. Trong kt
qu, ta gi nh rng

x(t ) ~ CN (0,1)

ging nh trng hp my thu nhn thng tin.