fe Wi EK ECR Journal of South China University of (Natural Science Edition) 3 36 46 9 BH 2008 4 9 J Vol.36 No.9 September 2008 SCHEMAS: 1000-565X (2008 )}09-0128-04 ARLE AR SDRE CMOS SEE HA ADR AS Be Ht CERT AS MT SEB, PB: AT HAACRHRA UB HE ARLCRSEH, LPR RAKE He RR H ik. HRT LH ALAA a MOS 41 HMAENAAS HR AM RRAR SG BRE Repert. FABRA RR ARAM x1OVK HS LERARA AH eR PTAT LOV & UEFA ah A ft eH 2% 609 mV, AR +H 510640) — #4 CMOS #8 1.23 pA;4 1.0 ~5.0V 09 Ob ER LIE Ae BRA AH 130 V/V, 19K a AP 36H 74.008. th FARM T AF A A LERS. Kita: Ae ww; HBP gy YES: TN 432 sates SEEPS 45 Ph AEA LF ik, ANE LE CASH A BALL AG EE LIP ih BRIT te REALS, Af i A EE KE i ea Fi FD FAN Fd hk BE 2. Pall ME SRB A SBE, EME AF, WB AHF AG Es A HO BOR. WS A5Ae e CQE FARE A a PRUAEL EX HY CMOS frye, HER) 9) BT A BR (LAAT Dts HED Rs BEL 5 ABE UES CESARE ACAD He BE ak, Sep aes 7 — Bees Hg LAY CMOS 2H Es FC Be oF bs 5A ETE He (PAT) ft OM Es A A RA IS AR ARAFE BEG Trt He HE AM EC PSR), AT AT ents He MOEA RL RE CMOS 2S ‘ADRS 5 SG ASO Ew MRP BE A IR FA SHRERLALP. 1 RRB 1.1 Cte DA MOS 4 ey V5 38 RE 24 MOS 4-7-4 4 WP (PLD A SEN HL Zo PT eee Apa res Sm FR: A 14 HY 4 CMOS 8h Hy 38 25 SLA RAF A CMOS 4 ° iol | [!-0( a) ]> Ves —Viw V Voit Very SPS MOS 4 (9 AEE HS SO fF AVAL FE 5 Vy = kT7q ARIE k BU WELT AARP TLE ge Ti se A A ‘| W/L Fy MOS 4 (1) 7498 98 KK EG 5 Loo AE } Q) yoo S 5 PAH He ne Vib i SE 3 Pilg, BL Ay A BE FRU SCARL 4 | HUH SY MOS LAE (EE {FLIBLINY, Vg Van BEIRAIE T 9 PSEC = r nT) y Vos(T) = Vau(T) + Vor + Cy % a [Ves To) ~ Vat Po) ~ Vor 1 @)989 ‘Hele Mt ANE CMOS A Mere EMAIL 129 SEE Vor 39 BSIMS V3. SUP A METEOR”. BL BE n( T) BAR APMIS MIE AL, BU nT) =n (TH), Vay 1) = Viy(To) +Kr(T/To ~1) , FIA: Ve(T) =Ves( To) +k. (7-1) (4) BU Ke ~ Ky + Ves(To) ~ Vow (To) — Vores Kr 23 BA {88 FR A id BE IK. BK, — AR AL, A A C4) FURY LA, V gg BEA EH eh ERAS AULA SLE IK. 1,2 SEER A RE SCP AR He HE EFUB) ME ACT iH Spa. We TEL A FT FG MOS “PS 48 He L DEBS, Vs SAT SABE ARIAL Ke / To » TELS Vy FAT TET BE BC hg HE Vy FEEL BM oe IEG Vs UI SB HE Vass = Ves +0Vr (5) SOLHEIM ASH ox AAV APL ANE Vie PEE SE IS “PANT BE 7 8 0. HP EH HE HEF V5 th MOS: EPS OR ee Bi Se , PAs EB 4 FRB A OPN 1 AE SB JS A, FR Vinee’ FA 10 FAD FAO lL, Ya rer |S Pp PE eee FRAT PEE Fig. 1 Principle of voltage reference 2 Bee 2.1 eR PTAT BH Has(S) BY Sa TF DE HB FR WV, YVAN PAT ADH ELE HB BE SCBL. PA 2 Bian Re TE CMOS 3 ME AF if Pl RAD sy flee, PAT sf a D8 G3 HUB SERRE AIA Ry {ELT LAGE MN #1 MN2 1 PECL BME IGEN RE TE: In em ==] (6) SR Syst BT Syne SHIT MNL A MIN2 (SHER He RAE CMOS XK BETZ, HEA (MOS 4 Re A HAZE AR SE TL 22 me MIN. SP PRT 8 BL HEA, IR(6) ATLA AUR AAG IE Ry AY IABE RI, FOI Mp, GIRLIE V, BARTER, MA ERE AM, Wi SEEK, SBR BER Voy ITH MOS MPI MP2 (ASR FE FS EL AA CE PEL ES ARUBA EAD Zp BEL Vin TE STDS AC ARE, ‘PET GRE BAD AYO PW OKT. 2 eB EH, SA ATE Dy FE, WM ES il EJ ECA. 2 fede PTAT pm AP Fig.2. Cireit of conventional PTAT curtent source 2.2 SH PSRR by PTAT BRIE aT ENR AGA PTAT obs SE FC tl EI BRAY SCH tH 2 iran Ha Baes MEAT T aiCiHE , SASAUPA 3 has. Sede MINI Al MN2 FYE Jr 5} LA MNS fl MN4 , 3 MP] MP2 (9 7Riat AB EB Hy MNS MING \MN7 MP3 #11 MP4 fin (H0328 HK BE NARs. A HE FE SINE AB A A Ab: Fak BEEK FE LTR USE AOA TD BE DA TD SAT BEB ‘Whee Hct fil 696) PAT Hee La a FA3) SU PSRR 9 PTAT dave RoE Fig.3. Gireuit of PTAT current source with high PSRR. Fa 4 Seeds TAGS PAT oh HEA Ae fs PTAT es Yt My SLA PG PSRR fy) PTAT Fe SEW: 4) PTA FELD Dog FD ta WEE RA ER. APL 4 TL Pa t fe130 % AEE RCA RE BL CEA RED FFE AE HE FBS Fo Bl Vow FES TAD IRG A Fo UAE 5 HE FA EH A FZ SNE D. 300 250 Ipod BIE Ty dre 5 VaR RHR Fig.4 Relationship curves of fy and Jy versus Vag FA i PSRR fi PTAT ra yeti 5 fee PLAT Hh RAR LG, EEG ETSI PEO ‘fb ERA RED. T BES, SCR FALIAR(9 ] e A Ae NY BE HEHE MNS MING ib BE CH, APEX BAEK RFE LAE | pA. aT PRE HSE PE HA BH RET, INL CE3Z AA a SS FRAME B = 1 ATOR RTE tit rmurs/ CC, +C,) ARIE BR BEALS BER 45°, NaHS C, {ELBE cay AF HR PA OE BEL 2.3 DERE RRB SH a A UE FR DB 9 A HBS Wir. RLS HHT LAG ts RAL PY 3 PAE EAB By PEAT HED FOR A At A LB. seb Pra i era eS Sen ERROR IAST EY Fig.5. Whole stotore of valle reference cuit ‘US a oy PAT EP Op LA VEEN SEI I Fy. ARABS 6) OTE nV Swray | Sus In gen (; *) r ) 36% WUEHL TH Lys RAM WN MNS EHR AS IE HOPS, GRRE AC HE, A GRGTE 1), EKG MINS fa BE UP ALEX. F Uys RASH ASTL RE JE ME BE TT EA, HALES (2) BYARD EE Lo bE TTA BUY Vise HEA TE AE 5 BIE She ALPE I, PEROT, HAE F Too BAG LEIP FTE HY EA 2 BP RE. HLL R, JE MRT MNS fey ap mets HEA Tes JP °AEABTHE ELLE, Vie « PEGDA FE AY ARAB Vawe = V wou tay (9) (10) HEAD EASK(O) HF Pt) Ke Vit) qi) C1) Be SIME T= Ty AME ROSS i TG EAS AA HCH A ce APL AT LARA Sk C10) at 9 FT MOS #5 (#998 15 He 2 BLOT (FFB BOR LAL. HL PLAT Hs SHEAR A OP OE A BD PRU es Ba AB EE, SPREE ME LAE. Jed abe eh MSI MS2 Aust z C, Hy. ba. MS1 FPA ef MINI MN2 df FC, (He CUBE ATE SL APAR AS FS, MS2 FF J REHLAS C, FEE (ME MSL ARR BE HEAL eH AT SAT, SSUES IS Joh UE EA PETA PER HE. 3 GRER SCH PR BEE A Be H OG EIT EE OV ane/ aT RH ALAL 0.18 um BE CMOS TZ. HA 6 HHT TT,SS FF SALES BEACH. Vis 45 UMHE NIA A MWER 4E 233 ~393 K fy ASE OEY , AE 2A BACH Wy 46 x 10°. Ef BE 15 FX MR AEA 7 a, MELA AE Vw DefOR BO. 9 Va HELE PS ARE TE Cs, A A FLAT AIGA CHO FRAY, 245. 9 130 V/V OMe ss — O64 Pree Se nen = zoho owt 038 F~ 06 os a} 33a 1K FO Vgy ASME HR ER Fig. 6 Relationship curves of Vygy versus temperature FA 8 JE AE HEHE AEWA AY PSRR fj POMEL. IAL 8 Hey LAL, CEAK F 2 kHz (588 5H AKA, PSRR OY GS 74. OB; HEHE IK AY PSR, HY VARA9 HL ‘elt _ (GALIE Monee CMOS Atte DEO 11 Sor i ag ho ae we FEC, RSH. BE LH: : bandgap voltage reference [J]. IEEE Journal of Solid- imap 5 ol State Circuits 1979 ,14(3) :655-657. 7 [2] Vittor E A,Neyroud 0. A low-voltage CMOS bandgap re- ference {1}. IEEE Joma of Sold State Circuits, 1979, ool a (oe 0 14(3) 518-57 Fil [3] Banba H, Shiga H, Umezawa A,et al. A CMOS 7 Vas Me RMR tefeence cic wth sb option [J te Cineuits 1999 ,34(5) ,670-674, Giustolisi G, Palumbo GCriscione Met a A low-voltage Fig.7 Relationship curve of Vass versus Vay eae oor Tow-pomer voltage reference based on subibreshold MOS- FETs [J] IEEE Journal of Solid-State Circuits, 2003 ,38 (1) 151-154, [5] | Naro G D, Lombardo © Paolino Cyet al. A low-power fully rmosetvollage reference generator for 90 nin CMOS tech- nology [C] // Proc of International Conf on IC Design & Technology. Padova IEEE 2006;1-4 fit [6] Allen P F,Holberg D R. CMOS analog circuit design [M) PS Ab EIA PSRR OFELAIIR 2nd ed. Oxford: Oxford University Press ,2002;97-99. (71 Cheng ¥, Hu C. MOSFET modeling & BSIMS user's guide [M). New York : Kluwer, 1999. 4 ti [8] Baker R Jacob, 14 Harry W Boyce David B, CMOS cireuit PSRRISE Fig. 8 Simulation result of PSRR for voltage reference design layout, and simulation (M]. New York; Jon Wie SCP BLEE T AIEEE ARH CMOS AE Hs ee eee Pachew M 1 FW. 161.0 Hore RHE, Bt peat abate OT Rnenel 1 Seat On ane a oa IPE wa Wy 609 nV , LIER By 46 x 10-°7K, fT PE i ic 7 west Symposium on Circuits System. Michigan: IEEE, (UI 1.23 WA. 46 1.0 ~5.0°V eye aE FDS A A 2000:328-331 DS, HEE APCIIE 130 V/V, {IRS PSRR 2 74. OdB. [10] Gray P R,Hurst P J, Lewis $ H,et al. Analysis and de- BANA BA Ay S CMOS he Be, ACG BE FTA) A AS A I ‘sign of analog integrated circuits ( M]. New York: John URE SUT BLAH CMOS “TZ Wiley & Sons,2001 652-656 Design of CMOS Voltage Reference for Low Voltage and Low Power Consumption Cai Min Shu Jun (School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong, China) Abstract ; In order to effectively decrease the power consumption of analog integrated circuits and improve the tech- nology compatibility, a design method of low-voltage low-power consumption voltage reference with fully CMOS con- figuration is presented based on the MOS transistors in sub-threshold region. In this method, the negative feedback system constructed by the PTAT current source and the micropower operation amplifier is employed to improve the power: ipply rejection ratio (PSRR). Simulated results demonstrate that, with a power supply voltage of 1.0V,, the circuit exhibits an output voltage of 609mV, a temperature coefficient of 46 x 10~*/K and a total power supply current of |. 234A, that when the supply voltage ranges from 1. OV to 5. OV, the power supply is of a voltage sensi tivity of 130 2V/V and a low-frequency PSRR of 74. 0dB, and that the proposed circuit has good compat CMOS technology due to the adopted full CMOS construction without parasitic bipolar junetion transistors. Key words: voltage reference; power consumption; power-supply rejection ratio; sub-threshold yy for