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K K
K K
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F K(Data
sheet)
TransistorThyristorDiode
K
K
K
K
K
--
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K
K (device technology)
K
K
Thermal performance maximum ratings
WK
Wmaximum power dissipation(PD) J
KK(Co)
K
W Thermal resistance Rthjc, Rthja J
K
(heat
sinking)
--
EF
W J
voltage
(VRRM)
Diode maximum peak repetitive reverse
(VRWM)
KK
(VR)
K
(Io)
K(IFRM)
K (IFSM)
K
--
EF
K
K
K
W
KK
WDiode instantaneous forward voltage
(VF)
KK
K (IR)
Co,Co
K
W J
I-V
K K (case)
K
--
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J
K
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K
K J
KEF J
EF J
EF J
EF J
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K J
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EF
V-I characteristic of the diode
K
K
KEF
KV, A J
KK, J
KmA A J
K V J
K V J
K J
KEF J
KEJ F J
J
K
KEJ F J
EJ F EJ F J
K
KEF J
V/div J
Kmsec/divmV/div(inv)
--
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EF
K J
Peak Inverse)
K
K(Voltage
KKX-Y J
K J
--
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EJ F
Vf(V)
If(mA)
EJ F
Vr(V)
Ir(A)
--
EF
EF
V-I characteristic of the thyristor(SCR)
EF J
K
EFKEF
K
KV, A J
. K variable, K, J
KmA A J
K V J
K V J
K J
EF J
K
V/div J
KX-YKmV/div(inv)
K J
KEF J
J
K
K J
--
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K J
(Peak Inverse Voltage)
K
J
K J
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K{F, F, F WK J
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V/div J
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Kmsec/div
K J
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K J
Vp J
KVav
K J
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K b a J
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K (Pulse)
KK(Gate)
K(Isolation stage)K
W
K J
K(Forward bias)
K J
WK
(Pulse generation) J
(Pulse amplification) J
(Pulse isolation) J
(UJT)
EFK
E F Vs K UJT
VEK=RC R C
Vp
=RB C RB
(Vv) VEK
--
EF
K
KKEF
EF K
(Pulse transformer)
EF
EF
EF
EF
--
EF
K KUJTJ
K{F
KJ
KJ
KEF J
V/div J
K msec/divK
RB J
K
K J
K
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K J
K J
--
EF
EF
KK
KEF
KV, A
.mHK variable
J
J
KmA A J
KEF V J
K J
K J
KEF J
V/div J
K msec/divK
KB,C J
K J
K
J
J
K J
K J
K
--
EF
KEinvFAKB,C
K J
K J
K J
K J
K J
K J
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--
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FK
K(Freewheeling diode)KE
KV, A J
KV, A J
.mHK variable J
KmA A J
KEF V J
K J
K J
EF EF J
K
V/div J
K
msec/div mV/div
V/div
KEinvFK
KB,C J
K J
K
J
K J
--
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J
KK
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KB,C
K J
K J
K J
K J
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FEF J
E
J
K
K J
J
K J
--
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--
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K
K
KV, A J
KK , J
mA AmA A J
K
KEHF V J
K J
KEF
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-
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V/div
K
Kb a
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KVav
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--
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J
K K
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--
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KKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKW
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KKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKKK
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