I HC BCH KHOA THNH PH H CH MINH

KHOA IN - IN T

B MN K THUT VIN THNG

TIU LUN MN HC

MCH TCH HP SIU CAO TN

TI: THIT K MCH KHUCH TI TN S 0.9 GHz VI
LI 10dB V CC TIU H S NHIU

Gio vin hng dn:

TS. HUNH PH MINH CNG

Hc vin:

L HNG ANH

NGUYN H B HI

Nhm : 08

H CH MINH, 05/2014

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

MC LC

LI CM N................................................................................................................................
3

THIT K MCH KHUCH TI TN S 0.9 GHz VI LI 10dB V CC TIU H

S NHIU .....................................................................................................................................
4
1.
GII THIU CHUNG V THIT K MT MCH KHUCH I NHIU THP ......
4
2.
TIN TRNH THIT K .....................................................................................................
6

2.1
CHN TRANSISTOR ....................................................................................................
6

2.2
N NH ..................................................................................................................
9

2.3

TNH TON CC THNG S NHIU .......................................................................

9

2.4
TNH TON LI CA MCH KHUCH I ..................................................
10

2.5
PHI HP TR KHNG CHO MCH KHUCH I ...........................................
13

2.6
THIT K PHN CC CHO MCH KHUCH I ..............................................
18
3.
KT QU M PHNG .....................................................................................................
19
4.
THC HIN LAYOUT CHO MCH KHUCH I .....................................................
21
5.
KT LUN ..........................................................................................................................
21
TI LIU THAM KHO ...........................................................................................................
22

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

LI CM N

Nhm thc hin xin gi li cm n chn thnh v su sc n Thy TS.

Hunh Ph Minh Cng v nhng bi hc y tnh thc tin v cng ngh
mch tch hp siu cao tn, v nhng hiu bit su rng i vi chuyn
ngnh in T Vin Thng v v xu hng pht trin ca ngnh hc.

Trong thi gian hu hn vic thc hin ti ca nhm khng th trnh nhng thiu
st trong tiu lun. Knh mong Thy v cc bn thng cm v ch dy thm.

Thn chc Thy v cc bn li chc sc khe, nim vui v hnh phc trong
cng vic v cuc sng!

Thnh ph H Ch Minh, ngy 01 thng 06 nm 2014

Nhm thc hin 08

L Hng Anh- Nguyn H B Hi

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

THIT K MCH KHUCH TI TN S 0.9 GHz VI

LI 10dB V CC TIU H S NHIU

GII THIU CHUNG V THIT K MT MCH KHUCH I NHIU THP

Bn cnh s n nh v li, mt phn thit k quan trng khc c xem xt cho mt

b khuch i siu cao tn l h s nhiu (Noise Figure). Trong cc ng dng ca b
thu thng yu cu phai c b tin khuch i vi mt h s nhiu thp nht c th, bi v
tng u tin ca mt b thu c nh hng ln n s thi hnh nhiu ca c h thng.
Thng thng khng th t c c hai s cc tiu h s nhiu v cc i li cho
mt b khuch i, tuy nhin mt vi s tng nhng c th c thc hin. iu ny
c th c thc bi vic s dng vng trn ng li v vng trn ng h s nhiu
la chn mt s nh i kh dng gia h s nhiu v li. Trong bi tiu lun ny
chng ta s a ra cc cng thc cho vng trn ng h s nhiu v biu din chng
c s dng nh th no trong thit k mt b khuch i transistor. H s nhiu ca
mt b khuch i hai ca c th c biu din nh sau

F F

RN

Y Y
2

(1.1)

min

GS

Sopt

Trong ,

YS = GS + jBS: l dn np ngun c a n transistor.

Yopt: dn np ngun ti u cc tiu h s nhiu.

Fmin: h s nhiu cc tiu ca transistor, t c khi YS = Yopt.

RN: in tr nhiu tng ng ca transistor.

GS: phn thc ca dn np ngun.

Thay v s dng dn np YS v Yopt, chng ta c th s dng h s phn x S v opt, trong

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

1
S

ZO
1

(1.2)

opt

opt

ZO 1

opt

S l h s phn x ngun. Fmin, opt, v RN c c trng bi transistor c s

dng, c gi l cc thng s nhiu ca thit b; chng c th c a ra bi
nh sn xut hoc o c.

Y Y
S

opt
opt

4
.

Zo 2

opt

Th
m
vo
,

G
Re
Y

1
1

11

2Zo

S
S

Zo
1

S
dn
g
cn
g
th
c
(1.1
)
a
ra
h
s
nhi
u
nh
sau

FF
min

4RN

opt

Zo

1
opt

(1.3)

(1.4)

(1.5)

i vi mt h s nhiu c nh F cng thc (1.5) c th biu din thnh mt vng

trn trong mt phng S. u tin ta biu din thng s h s nhiu N nh sau,

opt

F Fmin

(1.6)

opt

4RN / Zo

N l mt hng s cho mt h s nhiu c a ra v tp hp cc thng s nhiu.

Do c th vit li nh sau

Sopt

opt

N1

opt

N
N

S S

S opt

opt opt

opt

opt

S opt

S S

N 1

N 1

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Thm

opt

NN 1

opt

(1.7)

opt

/N 1

Gio vin hng dn: TS. Hunh Ph Minh Cng

vo c hai v ta c

N 1

N 1

Kt qu ny nh ngha cc vng trn ng h s nhiu vi tm l

opt

(1.8)

N 1

V bn knh l

RF

NN 1

opt

(1.9)

N 1

TIN TRNH THIT K

CHN TRANSISTOR

Bc quan trng u tin trong qu trnh thit k mch khuch i l la chn

Transistor ph hp vi cc yu cu c trng ca mch khuch i. Trong ti ny, mc

ch ca vic thit k l thc hin mch hot ng ti tn s 0.9 GHz v c li ti ng ra l
10dB. Trong trng hp ny Transistor NEC's NE85619 Low Noise Bipolar Transistor

c chn cho mch khuch i. Cc thng s c trng ca Transistor l c kh nng hot

ng n tn s 5 GHz v Vce = 3V Ic = 5mA. Ta thc hin tm cc thng s nhiu ca

Transistor ti tn s 0.9 GHz. Bi v, nh sn xut khng cung cp cc thng s NFmin, opt,

v RN ti tn s 0.9 GHz trong c datasheet v m hnh thng s S ca transistor, nn ta phi
thc hin m phng trn ADS tm cc thng s trn m hnh tn hiu ln.

u tin, ta phi phn cc cho transistor vi Vce = 3V v Ic = 5mA. Ta thit lp mt mch

phn cc nh trong hnh (2.1). M hnh tn hiu ln ca transistor NE85619 c ly t
th vin Low Noise Bipolar Transistor ca cng ty thit k chip RENESAS. Thc hin
mt m phng DC, thy c kt qu ta chn Simulate Menu > Annotate DC

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

solution. M hnh tn hiu ln i khi s cho cc thng s S khng chnh xc; do

, ta phi kim tra i chiu vi m hnh thng s S ca transistor.

Hnh 2.1 Mch phn cc ca Transistor.

So snh kt qu m phng vi m hnh thng s S ca transistor nh sau

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

Hnh 2.2 Cc thng s S ca Transistor ti 0.9 GHz.

Nhm 08: L Hng Anh Nguyn H B Hi

8

Mch Tch Hp Siu Cao Tn

S11

0.515 171.76 , S12

Gio vin hng dn: TS. Hunh Ph Minh Cng

0.104 47 , S21

3.202 76.1 , S22

0.276 54.8 .

T kt qu ta thy c s sai lch gia m hnh tn hiu ln v m hnh thng s S.

Tuy nhin, ti tn s 0.9 GHz s sai lch gia cc thng s khng ng k.

2.2 N NH

Ta tin hnh xem xt cc iu kin mch n nh khng iu kin s dng phng

php K

S S
11

22

test

S S
12

21

(0.515 171.76 )(0.276 54.8 ) (0.104 47 )(3.202 76.1 ) 0.195

S
11

22

1 (0.515)2 (0.276)2 (0.195)2

1.046

S S
12

21

2(0.104)(3.202)

Ta thy

1 v K > 1 nn Transistor n nh khng iu kin ti tn s 0.9 GHz.

2.3 TNH TON CC THNG S NHIU

S dng ADS tnh ton cc thng s nhiu t m hnh transistor tn hiu ln.

tnh ton cc thng s nhiu ti tn s 0.9 GHz ta s dng ty chn Single Point Sweep v

thit lp nhit 16.85 C (tng ng vi nhit chun cho nhiu l 290K). Trong b

iu khin S Parameter ta chn noise calculation.

Nhm 08: L Hng Anh Nguyn H B Hi

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

Hnh 2.3 M hnh tnh ton thng s nhiu ca Transistor ti 0.9 GHz.

S dng m hnh trn ta thu c kt qu nh sau

Hnh 2.4 Kt qu m phng cc thng s nhiu ca Transistor ti 0.9 GHz.

2.4 TNH TON LI CA MCH KHUCH I

li ca tng cng ca mch khuch i l

GT

GS GOGL

10 dB

Nhm 08: L Hng Anh Nguyn H B Hi

10

Mch Tch Hp Siu Cao Tn

Trong ,
G

S
21

3.2022

10 dB

Gio vin hng dn: TS. Hunh Ph Minh Cng

Vy
GS
GL
0 dB

Thc hin tnh ton vng trn ng li cho GS

0 dB 1

G
S max

1.36 1.34 dB

gS
GS

0.735

S max

11

C
S

g S
S

11

0.407 171.76O

1 1 gS
S
2

11

11

RS

1 gS

0.407

1 1 gS

11

Thc hin tnh ton vng trn ng li cho GL

0 dB 1

G
Lmax

1.082 0.34 dB

gL
GL

0.924

22

Lmax

C
L

g S
L

22

0.257 54.8O

1 1 gL

S
2

22

22

RL

1 gL

0.256

1 1 gL

22

Thc hin v cc vng trn ng li GS 0 dB , GL 0 dB v tm cc gi tr S, L

cc tiu h s nhiu ca mch khuch i.

Nhm 08: L Hng Anh Nguyn H B Hi

11

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

opt

GS = 0 dB

GL = 0 dB

Hnh 2.5 Tm S v L t cc vng trn ng li.

T cc vng trn ng li GS

0 dB , GL

0 dB biu din trn th Smith ta chn cc

gi tr S, L nh sau

0.29 101o

0.2 122o

Nhm 08: L Hng Anh Nguyn H B Hi

12

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

S dng cc kt qu ny cho ta h s nhiu nh sau

F Fmin

4RN

opt

1.53 1.85 dB

Z0

opt

2.5 PHI HP TR KHNG CHO MCH KHUCH I

Chng ta thit k cc mch phi hp t c cng sut ng ra mong mun v cc

mc cng sut b phn x v ng vo.

50

Input

Output

Transistor

50

Matching

[S]

Matching

Network

Network

IN

OUT

(ZS)
(Zin)

(Z )
out

(ZL

Hnh 2.3 Cu trc ca mt mch khuch i hai ca.

Mch phi hp tr khng ng vo v ng ra c thit k kt hp in tr 50

ca ngun v ti vi tr khng ng vo v ng ra ca tng khuch i nhm truyn
ti cng sut ti a n tng khuch i vi h s nhiu c gim thiu.

Thc hin thit k mch phi hp tr khng ng ra v ng vo mch khuch i

s dng th Smith vi cc gi tr S, L c chn. Kt qu tnh ton trn th
Smith nh sau

Nhm 08: L Hng Anh Nguyn H B Hi

13

Mch Tch Hp Siu Cao Tn

0.148

0.086

jbS

Gio vin hng dn: TS. Hunh Ph Minh Cng

yS

0.360

Hnh 2.6 Thc hin phi hp tr khng cho ng vo mch khuch i.

Nhm 08: L Hng Anh Nguyn H B Hi

14

Mch Tch Hp Siu Cao Tn

0.141

0.062

jbL

yL

Gio vin hng dn: TS. Hunh Ph Minh Cng

0.331

Hnh 2.7 Thc hin phi hp tr khng cho ng ra mch khuch i.

Nhm 08: L Hng Anh Nguyn H B Hi

15

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

T kt qu phi hp tr khng ta c c mch nh sau

0.190

0.212

0.062

0.086

Hnh 2.8 Mch khuch i thc hin phi hp tr khng.

Thit k on truyn sng Z0 = 50 dng Microstrip Line, Substrate FR4 r = 4,6.

Gi s dy ca on truyn sng l h1, v rng l W1. Ta thc hin tm t s
W1/h1, d on W1/h1 < 2

8eA

e2 A 2

Trong ,

R
C1

0.11

0.23

1.5577

60

Vy

8eA

1.849 2

e2 A 2

Ta chn h1 = 1 mm v W1 = 1.849 mm.

Kim tra li tnh ton vi phn mm APPCAD ta c kt qu nh sau

Nhm 08: L Hng Anh Nguyn H B Hi

16

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

Hnh 2.9 Thit k ng truyn sng 50 trn APPCAD.

T kt qu tnh ton trn APPCAD ta c cc thng s ca ng truyn sng nh sau

H = 1mm, W = 1.835mm, T = 0.01mm, Z0 = 50.01, = 179.386mm. T kt qu trn ta

c c mch phi hp tr khng nh sau

34.08mm

38.03mm

11.12mm

15.43mm

Hnh 2.10 Mch khuch i thc hin phi hp tr khng.

Nhm 08: L Hng Anh Nguyn H B Hi

17

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

2.6 THIT K PHN CC CHO MCH KHUCH I

Thit k ca mt mch phn cc DC cch ly tn hiu RF vi DC trong bng

thng mong mun c a ra. N bao gm mt cun dy v mt t in mc vo
mch dng hnh T (DC feeding v blocking).

Ngun: MICROWAVE TRANSISTOR AMPLIFIER Analysis and Design Guillermo

Gonzalez.

i vi mch khuch i cao tn, chng ta s dng on Microstrip Line di /4 thay

cho cun L. Vi /4 44.847 mm ta c mch phn cc nh sau

Hnh 2.11 M hnh mch khuch i cng sut vi phn cc DC trn ADS.

Nhm 08: L Hng Anh Nguyn H B Hi

18

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

3. KT QU M PHNG

Sau khi thc hin phn cc cho mch khuch i ta thc hin li cc m phng
kim tra cc thng s ca mch.

Hnh 3.1 M hnh m phng mch khuch i trn ADS.

Ta thc hin m phng cc thng s ca mch bng cch gn mt ngun AC tn

s 0.9 GHz vi cng sut thay i t -20dBm n 10dBm. Thc hin cng sut
ng ra v tnh ton li ca mch tng ng vi mi cng sut ng vo. Ngoi
ra, ta cng tin hnh xc nh ma trn thng s S v cc thng s nhiu ca mch.
Kt qu m phng thu c nh sau

Nhm 08: L Hng Anh Nguyn H B Hi

19

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

Hnh 3.2 Kt qu m phng mch khuch i trn ADS.

Nhm 08: L Hng Anh Nguyn H B Hi

20

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

T kt qu m phng ta thy li ca mch t gn ng 10dB v h s nhiu ca

mch l NF = 1.704 = 2.31dB c s sai lch khng ng k so vi gi tr tnh ton

(NF=1.85dB).

4. THC HIN LAYOUT CHO MCH KHUCH I

Hnh 4.1 Kt qu thc hin mch layout trn ADS.

KT LUN

Bi tiu lun thc hin thit k mch khuch i vi li 10dB hot ng ti

tn s 0.9GHz.

H s nhiu ca mch c cc tiu, tuy nhin vn cn sai s ng k gia kt

qu thit k v m phng.

Phn thc hin layout cho mch vn cha hon chnh v thiu cc th vin phn
mm.

Nhm 08: L Hng Anh Nguyn H B Hi

21

Mch Tch Hp Siu Cao Tn

Gio vin hng dn: TS. Hunh Ph Minh Cng

TI LIU THAM KHO

TS. Hunh Ph Minh Cng, MICROWAVE INTERGRATED CIRCUITS, Chapter 4,

Microwave Amplifier, Ho Chi Minh city University of Technology, 2014.

Ahmed Sedek Mahmoud Sayed, ULTRA WIDEBAND 5W HYBRID POWER

AMPLIFIER DESIGN USING SILICON CARBIDE FESFETS, Master of Engineering,
Elektrotechnik und Informatik der Technischen Universitt Berlin, 2005.

Guillermo Gonzalez, MICROWAVE TRANSISTOR AMPLIFIER Analysis and

Design, Second Edition, Prentice Hall.

Marian K.Kazimierczuk, RF POWER AMPLIFIERS, First Edition, A John Wiley and

Sons, Ltd., Publication, 2008.

RF Devices / RF Transistor ADS Design Kit,

http://sg.renesas.com/products/microwave, Renesas Electronics Corporation, 20102014.

Prof. Steve Long, Harmonic Balance Simulation on ADS, University of California

Santa Barbara, 2011.

Prof. Steve Long, Using ADS to simulate Noise Figure, University of California
Santa Barbara, 2011.

Nhm 08: L Hng Anh Nguyn H B Hi

22