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OPAMP Basics
OPAMP Basics
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Zener Diodes
Figure 3.2 Volt-ampere
characteristic for a
typical small-signal
silicon diode at a
temperature of 300 K.
Notice the changes of
scale.
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Ideal diode:
perfect conductor with zero voltage drop when
the diode is forward biased;
open circuit, when the diode is reversed biased.
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Solution
Step 1. We start by assuming that
D1 is off and D2 is on.
Step 2. The equivalent circuit is
shown in Figure 3.9b. iD2=0.5mA
and vD1=7V.
Step 3. We have vD1=+7V, which is
not consistent with our assumption.
Another Assumption
Step 1. We assume that D1 is on and
D2 is off.
Step 2. The equivalent circuit is
shown in Figure 3.5c. iD1=1 mA
and vD2= -3 V.
Step 3. These conditions are
consistent with the assumption.
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Exercise 3.2
Show that the condition D1 off and D2 off is not
valid for the circuit of the Figure 3.9a.
4k + v D1
+
-
10V
6k
vD2 +
3V
Exercise 3.3
Show that the condition D1 on and D2 on is not
valid for the circuit of the Figure 3.9a.
4k
+
iD1
10V
iD2
iD1+iD2
6k
3V
+
-
3V
= 0.5mA
6 k
10V 3V
iD1 =
= 1.75mA
4 k
iD 2 = (iD1 + iD 2 ) iD1 = 0.5 1.75 = 1.25mA
iD1 + iD 2 =
Solution
vD1 = 10V; vD2 = 3V.
The both diodes must be on since the voltages
across them are positive.
Solution
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R
+
vs(t)
Vmsin(t)
i(t)
+
-
Vm sin (t ) > VB
900
= 0.25 = 25% of the time.
360 0
Im =
VB
v, i
Vm VB 20 14
=
= 0.6A
R
10
20V
Solution:
The diode is on when
14V
or 20 sin (t ) > 14
i(t)
vs(t)
t
20 sin (t ) = 14
14
t = arcsin = arcsin 0.7 450 ; 1350
20
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iD D vD
dvD Q
di
rD D
dvD Q
iD
(3.11)
vD
rD
v
iD = D
rD
(3.12)
(3.13)
(3.14)
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vD
iD = I s exp
nVT
(3.15)
kT
q
(3.16)
T absolute temperature in K;
k = 1.3810-23J/K the Boltzmanns constant;
q = 1.6010-19C the charge of the electron;
At T = 300K VT 0.026V = 26mV
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Conduction by Holes
ni = pi
3. Diodes and Diode Circuits
(3.24)
TLT-8016 Basic Analog Circuits
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(3.25)
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(3.28)
(3.26)
pn = ni 2
(3.27)
Since pi = ni
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Drift
(3.29)
(3.30)
Vp = p
(3.31)
Diffusion
If there is a difference in the concentration of
the charges in the crystal, appears a flow of
charges toward the region with small
concentration, determining diffusion current.
3. Diodes and Diode Circuits
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Figure 3.43 Diffusion of majority carriers into the opposite sides causes a depletion region to appear at the junction.
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Q = CV
(3.33)
(3.34)
C=
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Depletion Capacitance
C=
C=
dQ
dvD
(3.36)
C j0
[1 (VDQ / 0 )]
(3.37)
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Diffusion Capacitance
Figure 3.49 Hole concentration versus distance for two values of forward current.
Cdif =
T I DQ
VT
(3.38)
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ts storage interval;
tt transition time;
trr reverse recovery time: total time in
which the diode is open after
switching
t rr = t s + tt
(3.40)
Figure 3.52 Waveforms for the circuit of Figure 3.51.
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Figure 3.53 Another set of waveforms for the circuit of Figure 3.51. Notice the absence of a storage interval.
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