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Tem Kriss
Tem Kriss
Incident Electron
Matter
Transmitted Electron
Eye
young.h.kim@kriss.re.kr
T. 042-868-5449, 010-9389-1606
2/71
I. ?
II. ?
(1) , ,
III. ?
(1)
(2)
IV. ?
(1)
(2)
3/71
I. ?
1. ?
-> (1)
(2)
2. ?
-> (1)
(2)
3. ?
4/71
: ?
5/71
6/71
Satellite camera
http://www.peakoil.net/images/PetitPrince.jpg
My Office
?
http://earty.google.com
7/71
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(1) ?
II. ?
[]
1 . .
2 <> . .
[]
<> .
9.109010-31 kg, 0.511 MeV. .
19 , .
e.
[]
<> . , ,
, () , () , ,
.
[]
1 <> ,
. . .
:
2 <>=.
10/71
(S)TEM
http://nobelprize.org/educational_games/physics/microscopes/1.html
http://nobelprize.org/educational_games/physics/microscopes/tem/tem.html
11/71
TEM
Philips CM30
JEOL 3010
Hitachi H9000
(filament)
: thermionic guns,
: 100 kV, 200 kV (low voltage TEM),
300 kV, 400 kV (medium voltage TEM), field emission guns
> 1 MV (high voltage TEM)
: medical TEM,
bio TEM,
materials TEM
12/71
- ()
-
13/71
http://nobelprize.org/educational_games/physics/microscopes/1.html
,
.
Hardware advances in imaging microscopes
H. Rose. In Advances in Imaging and Electron Physics Vol. 153 (ed. P. Hawkes) (Elsevier, 2009)
14/71
15/71
Geisler
Tompson
Quantum theory by Max plank
Laue P. Ewald -> X-ray diffraction theory
Bragg Diffraction Condition
kinematical diffraction theory (Darwin)
Schrdinger
Davisson and Germer interference
electron diffraction pattern
1928 Bethe Dynamical diffraction theory
1933 Ruska -> first EM
1939 first commercial EM (100 )
1947 RCA, Simens, AEI, Hitachi, JEOL, Phillips
1955-57 Cambridge Univ. Cavendish Lab.
-> Dislocation and defects imaging based on
Diffraction Contrast (Kinematical theory)
1961 100 kV TEM
1962 1,000 kV TEM (1MV) -> France (Dynamical theory )
1966-70 1 MV (Japan), 3MV (France)
1983 300-400 kV -> 1.8
1986 Nobel Prize (Ruska, 1906-1988)
1995 3MV (Japan) -> 0.88
First Electron Microscope with Resolving Power
2009 ~50 pm ()
Higher than that of a Light Microscope
Ernst Ruska, Berlin 1933 Replica by Ernst Ruska,
1980
For the first time the apparatus had a condensor
in front of the specimen and two magnifying
lenses. Magnification around 12,000
16/71
= + + + + + .
C
A
, (threading dislocation),
InSb
Si
,
Nb Mapping
Cu Mapping
17/71
(S)TEM
Image Analysis
Electron Diffraction
Chemical Analysis
a-Si
HfOx
~ 3 nm
SiO2
Si
GaSb
Twin I
Twin II
5.43 = aSi
by Young H KIM
CTEM image
Bright-field image
Dark-field image
HRTEM micrograph
(HA)ADF image
Energy-filtered TEM image
GaSb/Si
B=z=[110]
by Young H KIM
18/71
Size of an atom
: 20 ~ 300 pm
III. ?
http://en.wikipedia.org/wiki/Atomic_size
Relativistic
Wavelength (pm)
0.1
120
1.0
39
100
3.7
200
2.51
300
1.97
400
1.64
1000
0.87
l= 1.226/[E(1+0.978810-6E]1/2 nm
(E: accelerating voltage (V))
(dr)Scherzer Cs1/4l3/4
Cs: Spherical Aberration
l: Wavelength
19/71
(Bragg diffracted electron)
(TEM, STEM)
(TEM, STEM)
(EELS)
SEM (secondary electron)
(backscattered electron)
(cathodoluminescence, CL)
(REM)
.
Edited by young h kim
(, , (2002))
20/71
(S)TEM
Source
Condenser Lens
Specimen
Objective Lens
Objective Aperture
Selected Area Aperture
Intermediate Lens
Projector Lens
Optical Microscope
21/71
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Electron Sources
1. Thermionic source
23/71
Lenses
Roles
-
. ( )
- .
-
.
-
. ( )
24/71
Apertures
-
e
(electron wave)
k'
k
k0
(imginary aperture)
(objective aperture)
(lens)
(back focal plane)
(image plane)
.
.
.
.
.
.
25/71
Spherical aberration
:
q
q
(object)
M dr
(objective lens)
(disc of confusion)
.
(disc of confusion) .
q
dr = C sq 3
Cs (spherical aberration coefficient)
mm
26/71
Chromatic aberration
27/71
T
q
q' = M
dr = T q
M dr
A B C
A'
B'
(specimen)
(objective lens)
(image plane)
C'
OM vs SEM
dr
2
T=
T
tanq
2
dr
Depth of focus
Mdr S
S
= tan q = q
2
2
2
Mdr M 2 dr
S=
=
q
q
Depth of image
Screw length: ~ 0.6 cm
Images: the A to Z of Materials
28/71
29/71
30/71
<BF>
-
k0
k'
e
k
k0
k
q
(objective aperture)
(object)
(lens)
(back focal plane)
(image plane)
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Spectrometry:
Energy Dispersive X-ray Spectroscopy Analysis
(32)
4
2
3/2
2
M
(18)
5/2
3/2
3
1
1/2
0
1/2
1
L
(8)
Lb
Lg
D l =+- 1
Dj=0
K
Kb
Ka
Kb
Kb
1/2
+- 1
(2)
1/2
2 2 - 12
3
3
2
DU = U 1
=
U
=
13
.
6
Z
eV
1
22
4
4
Kb
m2 - n2
Z 2 m2 - n2
DU = U m - U n = U n
= - 13.6 2
eV
m2
n m2
''
3/2
1/2
La
'
Ka
hydrogenic atom
13.6
U n = - 2 Z 2 eV
n
< >
34/71
Spectrometry:
Energy Dispersive X-ray Spectroscopy Analysis
Types of X-rays
- Characteristic x-rays
elemental identification
quantitative analysis
- Continuum x-rays
background radiation
must be subtracted for
quantitative analysis
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Mechanism
Example
Vacancy in K-shell
Vacancy filled from L-shell
Emission of a Ka x-ray
(or a KLL Auger electron)
Important uses
Qualitative use x-ray energy to
identify elements
Quantitative use integrated peak
intensity to determine amounts of
elements
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Spectrometry:
Energy Dispersive X-ray Spectroscopy Analysis
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Spectrometry:
Electron Energy Loss Spectroscopy Analysis
-
r=
(screen) (aperture)
m eu
eH
(uniform field
sector magnet)
100
U0 - DU
U0
(electron loss spectrum)
38/71
From website
39/71
Spectrometry:
Energy filters
40/71
41/71
S
R
< >
y
M
Y
O
O'
A
B
H
X
Q
<>
< ( )>
: +
: +
(lattice)
:
(structure factor)
Edited by young h kim
(, , (2001))
< >
r r r
a, b , c :
r r
r r
b c
b c
r
a* = r r r =
V
a (b c )
r
r
r
r
r*
ca
ca
b = r r r =
V
b (c a )
r r
r r
a b
a b
r*
c =r r r =
V
c (a b )
42/71
< >
r r
r
r
b c
r
a* b = r r r b = 0
a (b c )
r
r
r r r r r r r r r r
a* b = a* c = b * a = b * c = c * a = c * b = 0
If
r r r r r r
a ^ b ^ c, a * // a , b * // b , c * // c
< >
r r
r* r
r
b c
a a = r r r a =1
a (b c )
r* r r* r
b b = c c = 1
r r r r
a * a =| a * || a | cosq
If a^b^c,
r
r
| a * |= 1 / | a |,
r
r
| b * |= 1 / | b |,
r
r
| c * |= 1 / | c |
43/71
< >
(3 Ewald >
r
q
| Dk |= 2k sin
2
r
1
q
| Dk | = 2 sin
l
2
q=2qB
r
1
| Dk | = 2 sin q B
|k'|=1/l
sin q B =
(Ewald sphere)
g*
(reciprocal lattice points)
qB
(hkl)
Dk = g*
qB qB
|k'| =
F G
qB
qB
qB
O
qB qB
|k| =
1
l
1
l
d
B
l = 2d hkl sin q B
Edited by young h kim
(, , (2002))
1
d hkl
l = 2d hkl sin q B
|k|=1/l
=
Dk
r
1
| g *|=
d hkl
|Dk| = |g*| =
44/71
S
R
y
M
Y
O
O'
A
B
H
X
Q
F
(Structure Factor)
r
r
~
F (Dk ) = m(Dk )
(lattice translation) r
r
m( r ) =
r
r
r
r
rn = ua + ub + wc
r
D(r ) =
~ r
D(Dk ) =
r r
f j * d (r - r j )
r
F (Dk ) =
r r
r
r r
f j (Dk ) exp(-2piDk rj )
f j (Dk ) exp(-2piDk r j )
j
r
f j ( Dk )
~
u w
r r
exp( -2piuDk a )
r r
exp(
2
p
i
D
k
rn ) @
r
r
= D ( r ) * m( r )
m
j
r
r
~ (Dk ) =
F (Dk ) = m
r r
exp(-2piDk rn )
, 1, 2, 3, ..., j, ... r
r r
d (r - rn )
f crystal
r r
r r
exp( -2piuDk b )
r r
exp( -2piwDk c )
1
1
r r
r r
r r
1 - exp( -2piDk a ) 1 - exp( -2piDk b ) 1 - exp( -2piDk c )
r
~ r ~ r
y (Dk ) = D(Dk )m(Dk )
r
f j ( Dk )
r
r ~ r
y (Dk ) = F (Dk ) D(Dk )
r
r r ~ r
= f j (Dk ) exp(-2piDk r j ) D(Dk )
j
r r
r k
r h
r l
n exp(-2piDk rn ) = h d Dk - ar k d Dk - br l d Dk - cr
r
r
r
r r
r
= d (Dk - ha * ) d (Dk - kb * ) d (Dk - lc * )
h
k
l
r
r* r*
r*
= d (Dk - ha - kb - lc )
h , k ,l
r r
= d (Dk - g * )
h , k ,l
45/71
TEM
:
46/71
46/80
(assumption) (limit)
1.
* ,
=> . (fg<<f0)
-> , Bragg
.
( )
2.
fg , .
s=0 ,
= p2t2/ (xg)2 .
*
I g ( x , y ) = y gy g
pt sin 2 (pst )
=
x (pst ) 2
g
1
= 2 2 sin 2 (pst )
s xg
t > xg/p , 1 1 ,
.
47/71
47/80
(kinematical theory)
yg =
k0
k0 k
(a)
k0 k'
k0
ip
xg
t
2 exp( 2pisz ) dz
t
2
ip sin(pst )
t
xg
pst
:
(kinematical integral)
I g ( x , y ) = y gy g*
2
k0 k'
pt sin 2 (pst )
=
x (pst ) 2
g
1
= 2 2 sin 2 (pst )
s xg
48/71
48/80
k0
dy 0 ip
r
r r
ip
= y 0 + y g exp{2pi ( g * + s ) rn }
dz
x0
xg
dy g
dz
k0 k
(a)
ip
xg
r r
y 0 exp{2pi( - g * - s ) rn } +
ip
x0
yg
k0 k'
dy 0 ip
ip
= y0 +
y g exp( 2pisz )
dz
x0
xg
k0
k0 k'
dy g
dz
ip
xg
y 0 exp( -2pisz ) +
ip
x0
yg
49/71
49/80
Df 2
I = yy = 1 +
b ( x , y )
4pk
Df 2
@ 1+
b (x , y )
2pk
*
Dfdz r ( x , y )
I @ 12V0
e
r
V (r )
b ( x, y ) = 2pk 0
dz
2V0
V0 , dz, Df ,
2 b ( x, y ) = 2pk 0
r(x, y)
r
r
2V ( r ) = e
r(x, y).
dz
2V0
2 b ( x, y ) = -2pk 0
r
2V (r )
dz r
2V0 e
-> .
, .
=> (high-resolution transmission electron microscopy, HRTEM)
.
: - .
1 nm .
50/71
50/80
I = yy *
@ 1+
Df 2
b (x , y )
2pk
2pk 0 2 t
b ( x, y ) =
V ( x , y , z )dz
0
2V0
2
Df 2
I @ 1+
b (x , y )
2pk
Df 2 t
= 1+
V ( x , y , z )dz
0
2Vo
Si 100
(projected potential)
Si 110
51/71
Preparation Methods
Ion milling, Tripod polishing,
FIB, Ultramicrotomy, replica
...
Materials
Metals
Ceramics
Semiconductors
Powders, Fibers, ...
Nanomaterials
IV. ?
Analysis Methods
Image Analysis
Electron Diffraction
Chemical Analysis
in-situ Analysis
.
Data Analysis
Image Processing
Simulation
.
http://www.google.com/
52/71
53/71
Specimen preparation
54/71
slicing
3
100
EPOXY
Ion milling
dimpling
polishing
50~60
50~60
< 5
100
55/71
Mesh Grid
56/71
57/71
(2) -
i. InSb
Sample A
(a)
Sample B
(b)
RMS: 7.162E+00 nm
RMS: 4.237E+00 nm
58/71
- Plan-view image
Sample B
Sample A
(a)
(b)
Region B
Region A
Region C
500 nm
110
110
001
500 nm
110
001
110
59/71
Microtwin
InSb
AlSb GaSb
Si
004 2-beam bright field image
60/71
InSb
AlSb GaSb
Si
004 2-beam bright field image
61/71
B
Region I
001 plane
15.8
B = z = [110]
62/71
Microtwins
Dislocation
A
C
A
C
A
InSb
Si
63/71
(a)
(b)
(a)
3
2
(b)
1, 2 : Epitaxial
3 : (twin)
4 :
64/71
000
400
222
311
220
200
111
(Rings from double diffraction)
O
(hkl)
qB
qB
hkl
000
Kikuchi pattern
65/71
Spectrometry:
Energy Dispersive X-ray Spectroscopy Analysis
66/71
67/71
Spectrometry:
Electron Energy Loss Spectroscopy Analysis
68/71
www.gatan.com/answers/answer1.php
69/71
1.
2.
3.
4.
69
70/71
1. , ( 115), , , (1998).
2. , , , , (2001).
3. , , , , (1999).
4. , , , , (2002).
5. , , , , , , (1996).
6. D.B. Williams and C.B. Carter, Transmission Electron Microscopy, Vol. I-IV, Plenum
Press, New York and London, (1996).
7. B. Fultz and J.M. Howe, Transmission Electron Microscopy and Diffractometry of
71/71
..
5 nm
100 nm
100 nm
-> ->