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Bipolar Junction Transistors
Bipolar Junction Transistors
Lesson 2
Introduction
A transistor is a semiconductor device that controls current between
two terminals based on the current or voltage at a third terminal.
It is used for amplification or switching of electrical signals.
The basic structure of the bipolar junction transistor, BJT, determines
its operating characteristics.
DC bias is important to the operation of transistors in terms of setting
up proper currents and voltages in a transistor circuit.
Two important parameters are DC and DC
Lesson 2
Bipolar junction transistors (BJTs)
B (Base)
C (Collector)
n
p
n
Base-Collector
junction
B
Base-Emitter
junction
E (Emitter)
Electronics Fundamentals 8th edition
Floyd/Buchla
p
n
p
E
2010 Pearson Education, Upper Saddle
River, NJ 07458. All Rights Reserved.
Lesson 2
Bipolar junction transistors (BJTs)
Lesson 2
BJT biasing
For normal operation, the base-emitter junction is forwardbiased and the base collector junction is reverse-biased.
BC reversebiased
+
pnp
npn
+
+
BE forwardbiased
Lesson 2
BJT currents
IE IC IB
Lesson 2
BJT currents
I C DC I B
IB
IE
I
Lesson 2
Voltage-divider bias
Because the base current is small, the approximation
R2
is useful for calculating the base voltage.
VB
VCC
R1 R2
R1
RC
VB
R2
VC
VE
RE
Lesson 2
Voltage-divider bias
VB
V
CC
15 V = 3.02 V
27 k + 6.8 k
R1 R2
VE = VB 0.7 V = 2.32 V
V
2.32 V
IE E
2.32 mA
RE 1.0 k
I C I E 2.32 mA
+15 V
R1
RC
27 k
2.2 k
2N3904
R2
RE
6.8 k
1.0 k
Lesson 2
Voltage-divider bias
Determine VB, VE, VC, VCE, IB, IE, and IC in the given
Figure, The 2N3904 is a general-purpose transistor with a
typical DC = 200.
Lesson 2
Collector characteristic curves
The collector characteristic curves are a family of
curves that show how collector current varies with
the collector-emitter
IC
voltage for a given IB.
IB6
The curves are divided into
three regions:
The breakdown
active
region
region
is after
saturation
region
the
is
after
saturation
the active
region.
region
occurs
when
the
baseThis
and
isisisthe
characterized
region
for by
emitter
and
the baseoperation
rapid
increase
of class-A
in collector
collector
junctions
are
operation.
current.
Operation
in this
both forward
biased.
region may destroy the
transistor.
IB5
IB4
IB3
IB2
IB1
IB = 0
0
VCE
Lesson 2
Collector characteristic curves
Lesson 2
Collector characteristic curves
Draw the family of collector characteristics curves for the
circuit in the given figure for IB = 5 A to 25 A in 5 A
increments. Assume DC = 100
Lesson 2
Collector characteristic curves
Draw the family of collector characteristics curves for the
circuit in the given figure for IB = 5 A to 25 A in 5 A
increments. Assume DC = 100
IB
IC
5 A
0.5 mA
10 A
1.0 mA
15 A
1.5 mA
20 A
2.0 mA
25 A
2.5 mA
I C DC I B
I C 100 5A 0.5mA
Lesson 2
Load lines
A load line is an IV curve that represents the response of
a circuit that is external to a specified load.
For example, the load line for the
Thevenin circuit can be found by
calculating the two end points: the
current with a shorted load, and the
output voltage with no load.
2.0 k
+12 V
INL
= 6.0
0 mA
mA
SL =
VNL
= 012VV
SL =
I (mA)
Load line
4
2
0
12
V (V)
Lesson 2
Load lines
The IV response for any load will intersect the load line
and enables you to read the load current and load
voltage directly from the graph.
I (mA)
IV curve for
3.0 k resistor
6
4
RL =
Q-point
3.0 k
0
VL = 7.2 V
Electronics Fundamentals 8th edition
Floyd/Buchla
12
V (V)
IL = 2.4 mA
Lesson 2
Load lines
The load line concept can be extended to a transistor
circuit. For example, if the transistor is connected as a
load, the transistor characteristic
I (mA)
curve and the base current
establish the Q-point.
6
2.0 k
4
+12 V
2
0
12
V (V)
Lesson 2
Load lines
Load lines can illustrate the operating conditions for a
transistor circuit. Assume the IV curves are as shown:
If you add a transistor load to the last
circuit, the base current will establish
the Q-point. Assume the base current
is represented by the blue line.
2.0 k
+12 V
I (mA)
6
4
2
0
12
V (V)
Lesson 2
Load lines
For the transistor, assume the base current is
established at 10 A by the bias circuit. Show the Qpoint and read the value of VCE and IC. The Q-point is the
intersection of the
load line with the
10 A base current.
IB = 25 A
IC (mA)
2.0 k
6
+12 V
IB = 20 A
IB = 15 A
IB = 10 A
Bias circuit
IB = 5.0 A
0
12
VCE (V)
Lesson 2
Signal (ac) operation
When a signal is applied to a transistor circuit, the output can have a
larger amplitude because the small base current controls a larger collector
current.
This increase is called amplification
The ratio of the ac collector current (Ic) to the ac base current (Ib) is
designated by ac (the ac beta) of hfe
Ic
ac
Ib
FIGURE 1713 An amplifier with voltage-divider bias with capacitively
coupled input signal. Vin and Vout are with respect to ground.
Electronics Fundamentals 8th edition
Floyd/Buchla
Lesson 2
Signal (ac) operation
When a signal is applied to a transistor circuit, the
output can have a larger amplitude because the small
base current controls a larger collector current.
For the load line and
characteristic curves from the last
example (Q-point shown) assume IB
varies between 5.0 A and 15 A
due to the input signal. What is the
change in the collector current?
IC (mA)
6
4
2
IB = 25 A
IB = 20 A
IB = 15 A
IB = 10 A
IB = 5.0 A
Lesson 2
CE amplifier
In a common-emitter amplifier, the input signal is applied
to the base and the output is taken from the collector. The
signal is larger but inverted at the output.
VC
C
R1
RC
Output coupling
capacitor
C2
C1
Input coupling
capacitor
R2
RE
C3 Bypass
capacitor
Lesson 2
Summary
CE amplifier
The bypass capacitor increases voltage gain. It shorts the signal around
the emitter resistor, RE, in order to increase the voltage gain. To
understand why let us consider the amplifier without the bypass
capacitor as explained the preceding equations.
VC
C
R1
RC
Output coupling
capacitor
C2
C1
Input coupling
capacitor
R2
RE
C3 Bypass
capacitor
Lesson 2
Formulas
Lowercase italic subscript indicate signal (ac) voltages and signal
(alternating currents)
Lesson 2
Formulas without the bypass capacitor
Av = RC / (re + RE)
If RE is much greater than re, then
Av RC / RE
Lesson 2
Formulas with the bypass capacitor
If the bypass capacitor is connected across RE, it effectively shorts the
signal to ground leaving only re in the emitter. Thus the voltage gain of
the CE amplifier with the bypass capacitor shorting RE is:
Av = RC / re
The transistor parameter re is important because it determines the
voltage gain of a CE amplifier in conjunction with RC. A formula for
estimating re is given without derivation in the following equation:
re 25mV / IE
Electronics Fundamentals 8th edition
Floyd/Buchla
Lesson 2
Summary
VCC = +15 V
25 mV
25 mV
10.8
IE
2.32 mA
V
R
Av out C
Vin
re
2.2 k
204
10.8
RC
R1
C1
27 k
2.2 k
2N3904
2.2 F
R2
6.8 k
C2
1.0 F
RE
1.0 k
C3
100 F
Lesson 2
Phase Inversion
The output voltage at the collector is 180 degrees out of phase with
the input voltage at the base. Therefore, the CE amplifier is
characterized by a phase inversion between the input and output. The
inversion is sometimes indicated by a negative voltage gain.
AC Input Resistance
Rin ac Ib re / Ib
The Ib terms cancel, leaving
Rin = Vb / Ib
Rin ac re
Vb = Iere
Ie ac Ib
Electronics Fundamentals 8th edition
Floyd/Buchla
Rin(tot) = R1R2Rin
Rin(tot) = R1R2ac re
RC has no effect because of the reverse-biased,
base-collector junction.
2010 Pearson Education, Upper Saddle
River, NJ 07458. All Rights Reserved.
Lesson 2
Current Gain:
The signal current gain of a CE amplifier is
Ai= Ic / Is
Where Is is the source current and is calculated by Vin /
Rin(tot)
Power Gain:
The power gain of a CE amplifier is the product of the voltage gain
and the current gain.
Ap Av Ai
Lesson 2
Decibel (dB) Measurement
The decibel (dB) is a logarithmic measurement of the ratio of one
voltage to another or one power to another, which can be used to
express the input-to-output relationship .
Lesson 2
Input resistance of a CE amplifier
VCC = +15 V
RC
R1
C1
27 k
2.2 k
2N3904
2.2 F
R2
6.8 k
C2
1.0 F
RE
1.0 k
C3
100 F
Lesson 2
Input resistance of a CE amplifier
Lesson 2
Input resistance of a CE amplifier
Calculate the input resistance of the CE amplifier. The
transistor is a 2N3904 with an average ac of 200. The value of re
was found previously to be 10.8 . Thus, acre = 2.16 k.
VCC = +15 V
Rin(tot) = R1||R2||acre
= 27 k||6.8 k||2.16 k
= 1.55 k
RC
R1
C1
27 k
2.2 k
2N3904
2.2 F
R2
6.8 k
C2
1.0 F
RE
1.0 k
C3
100 F
Lesson 2
CE amplifier
Determine the voltage gain, current gain, and power
gain for the CE amplifier given. DC ac = 100. Also, express the
voltage and power gains in decibels.
Lesson 2
CC amplifier (emitter-follower)
In a common-collector amplifier, the input signal is
applied to the base and the output is taken from the
emitter. There is no voltage gain, but there is power gain.
The output voltage is nearly
the same as the input; there is
no phase reversal as in the
CE amplifier.
The input resistance is larger
than in the equivalent CE
amplifier because the emitter
resistor is not bypassed.
Electronics Fundamentals 8th edition
Floyd/Buchla
VC
C
R1
C1
R2
RE
Lesson 2
Av (Voltage Gain)
Av = Vout / Vin
Vout = IeRE
Av = RE / (re + RE)
It is important to notice here that the
gain is always less than 1. Because re is
normally much less than the RE, then a
good approximation is Av = 1
2010 Pearson Education, Upper Saddle
River, NJ 07458. All Rights Reserved.
Lesson 2
AC Input Resistance
The emitter-follower is characterized by a high input resistance, which
makes it a very useful circuit. Because of the very high input
resistance , the emitter follower can be used as a buffer to minimize
loading effects when one circuit is driving another.
Rin = Vb / Ib
Vb = Ie (re + RE)
Ie ac Ib
Rin ac Ib (re + RE) / Ib
Rin ac RE
Total Input Resistance of a CC amplifier:
Rin(tot) = R1R2Rin
Electronics Fundamentals 8th edition
Floyd/Buchla
Lesson 2
Current Gain:
The signal current gain for the emitter-follower is
Ai= Ie / Is
Where Is is the signal current and is calculated by Vin / Rin(tot)
Since Ie = Vout / RE and Is = Vin / Rin(tot) then Ai can also be expressed as
assuming Vout / Vin = 1:
Ap Ai
Electronics Fundamentals 8th edition
Floyd/Buchla
Lesson 2
CC amplifier
Calculate re and Rin(tot) for the CC amplifier. Use = 200.
R2
27 k
VB
V
CC
15 V = 8.26 V
R
R
22
k
+
27
k
1
2
VE VB 0.7 V = 7.76 V
V = +15 V
CC
VE 7.76 V
7.76 mA
RE 1.0 k
25 mV
25 mV
re
3.2
IE
7.76 mA
IE
R1
C1
22 k
2N3904
10 F
R2
27 k
RE
1.0 k
Lesson 2
CC amplifier
Determine the input resistance of the emitter-follower in the given
figure. Also find the voltage gain, current gain and power gain.
Lesson 2
The BJT as a switch
BJTs are used in switching applications when it is
necessary to provide current drive to a load.
VCC
VCC
RC
RC
VOUT
0 CC
V
=V
Lesson 2
The BJT as a switch
Lesson 2
The BJT as a switch
Conditions in Cutoff A transistor is in cutoff when the base-emitter junction is not forward biased.
I B (min)
I C ( sat)
DC
VBE ) 0.7V
I C ( sat)
RB (max)
VCC
RC
VRB
I B (min)
Lesson 2
The BJT as a switch
(a) For the transistor switching circuit in the given figure, what is
VCE when VIN = 0 V?
(b) What minimum value of IB will saturate this transistor if the
DC is 200?
(c) Calculate the maximum value of RB when VIN = 5 V.
Lesson 2
The FET
The field-effect transistor (FET) is a voltage controlled
device where gate voltage controls drain current. There
are two types of FETs the JFET and the MOSFET.
JFETs have a conductive channel
with a source and drain connection
on the ends. Channel current is
controlled by the gate voltage.
G (Gate)
n
p
D (Drain)
n n
p-channel JFET
Lesson 2
The FET
Lesson 2
The FET
Lesson 2
The FET: MOSFET
The MOSFET (Metal Oxide Semiconductor FET)
differs from the JFET in that it has an insulated gate
instead of a pn junction between the gate and channel.
Like JFETs, MOSFETs have a conductive channel with the
source and drain connections on it.
D (Drain)
Channel current is
controlled by the gate
voltage. The required gate
voltage depends on the type
of MOSFET.
n
G (Gate)
Channel
Substrate
S (Source)
n-channel
p-channel
MOSFET
MOSFET
Lesson 2
The FET: MOSFET
Lesson 2
The FET: MOSFET
In addition to the channel designation, MOSFETs are subdivided
into two types depletion mode (D-mode) or enhancement mode
(E-mode).
The D-MOSFET has a
physical channel which
can be enhanced or
depleted with bias. For this
reason, the D-MOSFET
can be operated with either
negative bias (D-mode) or
positive bias (E-mode).
FIGURE 1736 Operation of n-channel D-MOSFET.
Lesson 2
The FET: MOSFET
Lesson 2
The FET: MOSFET
The E-mode MOSFET has no physical channel. It can only be operated
with positive bias (E-mode). Positive bias induces a channel and enables
conduction as shown here with a p-channel device.
induced channel
E-MOSFET
E-MOSFET with bias
FIGURE 1738 E-MOSFET construction and
operation.
Electronics Fundamentals 8th edition
Floyd/Buchla
Lesson 2
The FET: MOSFET
Lesson 2
JFET biasing
JFETs are depletion mode devices they must be
operated such that the gate-source junction is reverse
biased.
+VDD
VDD
The simplest way to bias a JFET is
to use a small resistor is in series
with the source and a high value
resistor from the gate to ground. VG = 0 V
The voltage drop across the source
resistor essentially reverse biases
RG
the gate-source junction.
Because of the reverse-biased
junction, there is almost no
current in RG. Thus, VG = 0 V.
Electronics Fundamentals 8th edition
Floyd/Buchla
RD
RD
VG = 0 V
V S
+VS
RS
n-channel
RG
RS
p-channel
Lesson 2
JFET biasing
For the n-channel JFET, the gate-tosource voltage is VGS VG VS 0V I D RS
VGS I D RS
DD
DD
Lesson 2
JFET biasing
Find VDS and VGS in the JFET circuit below, given that ID =
5mA
Lesson 2
D-MOSFET biasing
D-MOSFETs can be operated in either depletion mode
or in enhancement-mode. For this reason, they can be
+VDD
biased with various bias circuits.
The simplest bias method for a DMOSFET is called zero bias. In this
method, the source is connected directly
to ground and the gate is connected to
ground through a high value resistor.
RD
VG = 0 V
RG
n-channel D-MOSFET
with zero bias
Lesson 2
D-MOSFET biasing
DD
DSS
Lesson 2
D-MOSFET biasing
Determine the drain-to-source voltage in the circuit of the
given figure. The MOSFET data sheet give VGS(off) = -8 V and
IDSS = 12 mA
Lesson 2
E-MOSFET biasing
E-MOSFETs can use bias circuits similar to BJTs but
larger value resistors are normally selected because of
the very high input resistance.
+VDD
+V
DD
RD
R1
RG
RD
R2
Drain-feedback bias
Electronics Fundamentals 8th edition
Floyd/Buchla
Voltage-divider bias
Lesson 2
E-MOSFET biasing
FIGURE 1744 E-MOSFET biasing arrangements.
R
2
1
Electronics Fundamentals 8th edition
Floyd/Buchla
VDS VDD I D RD
Lesson 2
E-MOSFET biasing
Determine the amount of drain current in the given figure. The
MOSFET has a VGS(th) of 3 V.
Lesson 2
Lesson 2
Lesson 2
Junction field- A type of FET that operates with a reverseeffect transistor biased junction to control current in a channel.
(JFET)
MOSFET Metal-oxide semiconductor field-effect
transistor.
Lesson 2
Quiz
5.0 k
+10 V
c. 2 mA.
d. the origin.
Lesson 2
Quiz
5.0 k
+10 V
c. 2 mA.
d. the origin.
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
VC
C
c. common-drain.
d. none of the above.
C1
R1
R2
RE
Lesson 2
Quiz
VC
C
c. common-drain.
d. none of the above.
C1
R1
R2
RE
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
Lesson 2
Quiz
R1
RD
R2
Lesson 2
Quiz
+VDD
c. D-MOSFETwith self-bias.
d. E-MOSFET with self bias.
R1
RD
R2
Lesson 2
Quiz
+VDD
R1
RD
d. equal to +VDD
R2
Lesson 2
Quiz
+VDD
R1
RD
d. equal to +VDD
R2