MOSFET Capacitance : All electronic devices have internal capacitances that limit the high frequency performance of the device, In logic applications, these capacitances limit the switching speed of the circuits and in amplifiers, the capacitances limit the frequency at which useful amplification can be obtained, The charge in the MOSFET inversion layer and in the depletion region depends on the voltages applied to the gate, source, drain and substrate. The derivatives of this charge with Tespect to the terminal voltages may be defined as MOSFET capacitances. The MOSFET equivalent circuit is shown in Fig. 1.9.1.Fig. 1.9.1 : MOSFET equivalent circuitThe diodes between drain-substrate and source-substrate represent the leakage curr in the induced channel to substrate junctions. This equivalent circuit is used for the simulation of MOSFET circuits. In the linear region (when V,,, < V,,,,,), the total charge Q,, can be written as 0 0 ‘oF= Le f ¢; V;(x) dx Where Q(x) is the channel charge per unit length. W = Gate width. c, = Gate insulator capacitance per unit area. Vj (x) = Voltage drop across the gate insulator. ‘The gate charge Q,, can be expressed as, De AW a= Nag) = Woe Yop) — es = 3 SV a5= Vind = Vos = Vow) where C, = c, WL