SHE & SNE in SRO/LSMO

H
H

NM/FM
FM
V

V
NM

NM
FM
I

Device Schematic and measurement

geometry

Mask

Fabrication & Characterization

SRO/LSMO (10 nm/10 nm) blanket deposition
with PLD
Alignment marks (litho with DSA, Ti/Au (10 nm/50
nm) in orion and lift off)
Etching of SRO/LSMO (resist giving hardening
problems in Ar ion milling, used SiO2 mask
instead, etch rate of SiO2 in BHF extremely high
as compared to LSMO)
Selective etching of LSMO (using SiO2 mask in Ar
ion milling and wet etching with BHF, etch rate of
LSMO in BHF is much higher than that of SRO)
Contact pads (with DSA and Ti/Au (10nm/150
nm) deposition in orion and lift off)

 at T=300 K, LSMO=5 m cm, SRO=0.1

m cm
t=10 nm, l=400 um, w=40 um
RLSMO= 50 k; RSRO= 1 k; Robtained= 1.9
k

et al. J. Mater. Res., 14, 11, 1999

Optical image of a deviceZakharov
S Jain et al. Physica B, 103-106, 448, 2014

Moment (emu)
0.00007
0.00006

Moment (emu)

0.00005

Tc around 320-325 K

0.00004
0.00003
0.00002
0.00001
0.00000
-0.00001
0

100

200

300

400

Temperature (K)

M-T of a SRO/LSMO
film
5K
300 K

0.00010

300 K
0.000015

0.00008
0.00006

0.000010

Moment (emu)

Moment (emu)

0.00004
0.00002
0.00000
-0.00002
-0.00004

0.000005

0.000000

-0.000005

-0.000010

-0.00006
-0.00008

-0.000015

-0.00010
-3000

-2000

-1000

1000

2000

H (in Oe)

M-H of a SRO/LSMO

3000

-500

-400

-300

-200

-100

100

200

300

400

500

H (in Oe)

M-H of a SRO/LSMO film at 300 K

113.1

113.5

113.0

113.4

112.9

113.3

112.8

113.2

112.7

113.1
113.0
112.9

150 K_1 mA
150 K_2 mA

113.2

113.6

R (in Ohm)

R (in Ohm)

150 K_1 mA
150 K_-1 mA

112.6
112.5
112.4

112.8

112.3

112.7

112.2

112.6

112.1
112.0

112.5
-600

-400

-200

200

400

600

-600

H (in Oe)

-400

-200

200

400

600

H (in Oe)

100 K_1 mA
200 K_1 mA
88.8

152.8

88.6

152.6

152.4

R (in Ohm)

R (in Ohm)

88.4
88.2
88.0
87.8

152.2

152.0

87.6
151.8

87.4
-600

-400

-200

H (in Oe)

200

400

600

For SHE

-600

-400

-200

H (in Oe)

200

400

600

150 K_1 mA
150 K_-1mA

0.001971
0.001970

0.015770

0.001969

0.015765

0.001968

0.015760

0.001967

0.015755

0.001966

0.015750

0.001964

0.015745

0.001963

0.015740

V (in V)

V (in V)

0.001965

0.001962
0.001961
0.001960

0.015735
0.015730

0.001959

0.015725

0.001958

0.015720

0.001957

0.015715

0.001956

0.015710

0.001955
-600

150 K_2 mA
150 K_-2mA

0.015705

-400

-200

200

400

600

H (in Oe)

-600

-400

-200

H (in Oe)

For SNE
device

200

400

600

Conclusions & Future Work

No clear signals
Fabrication and characterization with
modified design
LSMO/PTFO/LSMO CPP