XIAOSHENG

Silicon Junction FETs

Symbol:

Drain

LH03 Series of Products interconvert:

2SK30A

Gate
Source

Silicon N-Chinnel Junction FET

Package example:

Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC electronic switch.

Absolute Maximum Ratings (Ta=25)

Parameter
Gate to Drain voltage

Symbol

Ratings

Unit

VGDO

-50

Package

VGSO

-50

SC-59

Gate current

IG

10

mA

SOT-23

Allowable power dissipation

PD

250

mW

TO-92S

Junction Temperature

Tj

125

Storage Temperature

Tstg

-55 to +125

Gate to Source voltage

Electrical Characteristics (Ta=25)

Prameter
Symbol

TO-92

Conditions

min

IDSS

VDS = 10V, VGS = 0V

Gate to Source leakage current

IGSS

VGS= -30V, VDS = 0V

Gate to Drain voltage

VGDS

IG = -100AVDS = 0V

-50

Gate to Source cut-off voltage

VGS(OFF)

VDS = 10V, ID = 0.1A

-0.4

Forward transfer admittamce

| Yfs |

VDS= 10VVGS= 0Vf = 1KHZ

1.2

Ciss

Reverse transfer capacitance (Common Source)

Crss

TO-18

Drain to Source cut-off current

Input capacitance (Common Source)

typ

0.3

VDS= 10VVGS= 0Vf = 1MHZ

max

Unit

6.5

mA

-1.0

nA
V

-5.0

mS
8.2

pF

2.6

pF

IDSS Rank Classification

Runk
IDSS(mA)
Marking Symbol

GR

0.3 to 0.75

0.6 to 1.4

1.2 to 3.0

2.6 to 6.5

035D

035E

035F

035G

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