Biomedical Microsystems

BM 658

FABRICATION PROCESS
Wafer 1:
(a) Starting material, phosphor doped (n) bulk silicon <1 1 1>, 10 thick with = 3-5
-cm.
(b) 1 thick SiO2 by oxidation (4h in steam at 1 atm at ~1100 C).
(c) Backside n+ diffusion (P2O5)
(d) Deposit photoresist.
(e) Pattern photoresist by exposure for p+ diffusion (lithography)
(f) HF + NH4F oxide etch followed by stripping resist
(g) p+ Boron diffusion to realise p-n photodiode & provision for diode contact
(h) LPCVD depositions of Dielectric layers of Si3N4-SiO2-Si3N4, each of thickness
/4=200nm, patterned using liftoff to form a Dielectric mirror at the operating
wavelength.
(i) Deposition & patterning of 200 nm Al by sputtering. (contact for electrostatic
control of cavity spacing) Additional deposition 2 for contact with p+ region
(j) LPCVD deposition & patterning of sacrificial layer of PolySi , 2 thick
(k) LPCVD oxidation(100 Pa, 600 C) & lithography as described earlier for SiO2
layer for upper mirror & suspension beams 1 thick
(l) Additional deposition of 2 thick polySi , patterned to provide strength for
suspension beams, followed by patterned deposition of SiO2
(m) e beam deposition & patterning of Ti to improve the Au adhesion to SiO2
(n) Au deposition by sputtering (30 nm) for upper mirror (reflectivity as well as
electrostatic control of sensitivity).
(o) Anisotropic wet etching of sacrificial PolySi in TMAH solution at ~80C.
(p) Antireflective coating of LPCVD silicon nitride 200 nm thick patterned on the
backside of the wafer.
(q) e beam deposition of Al 200nm (backside) patterned through liftoff for
electrostatic control of cavity spacing.

N.S.Ananathakrishnan

MTech I Biomedical

05330002

Biomedical Microsystems

BM 658

N.S.Ananathakrishnan

MTech I Biomedical

05330002