1

Khi nim mch phi tuyn Cc c

tuyn

Phn tch mch bng ton hc

Phn tch mch bng th

Phn tch mch tn hiu nh

Phn tch bng tuyn tnh tng

mnh

Mch phi tuyn l mch c c tuyn v-i la ng cong

in tr phi tuyn l mt yu t c tnh cht phi tuyn tnh, c
biu hin qua mi quan h i s gia dng in tc thi v in
th tc thi ca n.
Diode l mt v d ca linh kin c xem nh l mt in tr phi
tuyn, c hai cc, m dng in ca n ph thuc vo in th i
qua cc cc ca n theo mt hm m.
K hiu Diode

Is=Is.(evD
/vTH-1)

H thc biu din mi quan h gia

in th vD v dng in iD trong
diode:
iD = Is.(evD/vTH-1)
Vi cc loi diode silicon th cc hng
s : Is = 10-12A
vTH = 0.025V

c tuyn iD vD ca
mt diode silicon

Chng ta c h thc:

c tuyn v i ca mt
thit b tun theo lut
bnh phng

K v VT l hng s cho trc.

iDS v vDS l 2 bin s.

VD: Cho K = 4 mA/V2, vT = 1V. Hy tnh gi tr ca iDS khi;

a/vDS = 2V
vDS = 2V vDS > vT
iDS = K(vDS vT)2
= 2 mA
b/vDS = 0.5 V

= 4 * 10-3 (2 1)2
2

D thy vDS < vT iDS = 0.

Cho mch in nh hnh v d

kin km theo. Tnh iD

Gii
TH1: vD
0 iD = 0.
TH2: vD > 0, lc ny ta s p dng nh lut KVL v h thc iD =
KvD2. Ti im nt c in th vD:

Quy ng mu s ta c

RKvD2 + vD E = 0

Th vD vo h thc iD = KvD2, ta c

Ta thy y l mt hm s bc 2, nn th ca n c dng parabol

VD: Cho mch nh sau v cc d

kin
E = 3V, R = 500
Ohm. Tnh vD, iD, vR.
Gii
Chng ta c 2 phng trnh ng thi m
t mch in ny
iD = - (vD E)
(1)
R
iD = Is(evD/vTH 1)

(2)

Chng ta cn v th ca 2 pt trn cng 1 h trc ta v tm giao im

ca chng
PT(1): th E v R vo th tr thnh hm s bc nht. thi ca n
l mt ng thng.
PT(2): thi ca n l mt ng c tuyn m chng ta cp
phn u

Khi iD = 0 vD = E
Da trn cc gi tr trn thi. Ta thy c iD = 5mA, vD = 0.6V
vR = iD * R = 5 * 10-3 * 500 = 2.5 V.

Phng php phn tch mch tn hiu nh c p dng cho

cc mch in cha cc linh kin phi tuyn c vn hnh
trong mt gii hn nh ca gi tr in th hoc cng
dng in. i vi s xo trn nh gia in th v cng
dng in ti mt im nh, th ta c th p dng phng
php phn tch mch tuyn tnh tng mnh cho mch tn
hiu nh. Cc nh lut KVL, KCL, cng nh mi quan h
tuyn tnh gia v-i cng c tha mn

Mch tn hiu nh

iD = Is(e0.7V + 0.0001sin(wt)/vTH 1)
Phng php chung tm in th v cng
dng in trong mch tn hiu nh. Vi: iD = f(vD)
1.Tm 2 gi tr : cng dng in 1 chiu iD v
in th mt chiu vD trn mch nhnh bt ngun
t mch chnh bng cch chnh ngun tn hiu nh
= 0. C th p dng cc p/p: ton hc, th, phn
tch mch tuyn tnh tng mnh.
2. Tm in th ra khuch i v cng dng
in khuch i ca thit b phi tuyn bng cch
tao nn mt mch nhnh khuch i m trn
thit b phi tuyn c
thay
mt
in
trgi
Cc
inth
trbng
tuyn
tnh
c
mang gi tr:
li, ngun 1 chiu c chnh = 0 .
C th p dng cc p/p phn tch
tuyn tnh.

VD: Cho thit b sau

iD = KvD2 nu vD
>
0
=0
nu vD
0
Cho K = 1mA / V2, VD = 1 V, ID = 1mA
Gii
Ta thy th in tr tuyn tnh hnh b thay th
cho thit b phi tuyn khuch i hnh a. Theo cng
thc th ta c

V f(vD) = KvD2 o hm ca f(vD) theo vD = 2KvD

P/p ny c xem nh l s thay th c tuyn v-i ca cc thit b

phi tuyn bng cc on thng, sau chng ta c th tnh ton
trn mi on thng bng cc cng c phn tch tuyn tnh.
Chng ta s p dng p/p phn tch ny vo mt loi diode gi l
diode l tng .

c tuyn i v ca mt loi
diode silicon vi 2 t l khc
nhau

Kiu mng tuyn tnh c th chi thnh 2 trng thi

1.Diode ON (Ngn mch): vD = 0,

2. Diode OFF (Mch h): iD = 0

vi iD > 0

vi vD < 0

VD: Cho mch

E c 2 gi tr : E = 3 V v E = -5 V, R = 500 Ohm
Gii
Khi ngn mch :
iD = E/R
vR = iD * R = E/R * R = E
Khi h mch d thy iD v vD u = 0
Kt hp li v da vo 1 cht trc gic, ta c th thy khi ngn mch
th E = 3V, v in tr v diode khng sn sinh ra nng lng, chiu
dng in phi l chiu nng lng c chuyn i t ngun th.
iD = E/R = 3/500 = 6mA v vR = 3 V
Khi E = -3V vD < 0, diode s tt. iD v vR u = 0
*Nhn xt: phng php phn tch tng mnh l phng php c
chnh xc tng i.