SbE D MM 7120826 OO40941 173 MMPHIN Now PHILIPS INTERNATIONAL SbE D HIGH-SPEED SILICON DIODES eS Planar epitaxial diodes intended for general purpose applications. QUICK REFERENCE DATA, Continuous reverse voltage VR max. 78 V Repetitive peak reverse voltage VarM max. 100 V Repetitive peak forward current IRM max. 225 mA Forward voltage Ip=10 ma, Ve < Vv Roverse recovery time when switched from Ip = 10 mA to Ip = 60 mA; Ry = 100 @; measured at Iq = 1 mA ter < 4ns MECHANICAL DATA Dimensions in mm Fig. 1 SOD-27 (D036). | Lu t i IN914: white brown yellow natural 1NS16: white brown blue natural (cathode) Diodes may be either type-branded or colour-coded. © Products approved to CECC 0001-21. April 1992 929 Pntod From CAPS Pat Version 1.2P This Materia Copyichod By Pips Sercneducors,SbE D MM 7110826 OO4O54e OOT MMPHIN 1NO14 ANS16. T-03~09 ~~ PHILIPS INTERNATIONAL SbE ) CEtennsaeeen=eeeEETE RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Continuous reverse voltage Va max. 78-V Repetitive peak reverse voltage VanM max. 100 V Average rectified forward current {averaged over any 20 ms period) Tamb = 25°C Ie(AV) max, 75: mA Tamb = 150 °C Ie(av) max. 10 mA Forward current (d.c.) Ip max, 75 mA Repetitive peak forward current IRM max. 225 mA Non-tepetitive peak forward current (t= 1s) Irgm max, 500 mA Total power dissipation Prot max. 250 mW Storage temperature Tag -88 10+ 200 9¢ Operating ambient temperature Tamb ~85 t+ 175 9¢ CHARACTERISTICS ‘Tj = 25 OC unless otherwise specified Forward voltages Ip= 10 ma Ve < Vv Reverse avalanche breakdown voltage t= 100 uA Voorn > 100 v Reverse currents Van 20V IR < 25 nA Var 75V IR < 5 uA Vp = 20 V;T; = 150 06 IR < 50 uA Diode capacitance Vp =0:f=1 MHz iNo14 cy < 4 oF 1na16 Ca < 2 pF Forward recovery voltage when switched to I¢ = 50 mA; t, = 20 ns Veo < 25V sp m=) ( Pntod From CAPS Pat Version 1.2P This Materia Copyichod By Pips Sercneducors,SbE D Ml 7220826 OOWOU43 THE MMIPHIN tilgespeedsticon diodes PHILIPS INTERNATIONAL Fig, 2 Test circuit and waveforms forward recovery voltage. Input signal: Rise time of the forward '20 ns; duty factor, d = 0,01. Oscilloscope rise time, ty = 0,35 ns. Circuit capacitance < 1 pF (oscilloscope input capacitance and parasitic capacitance). Rovere reomery tine nod 1no10 Reon rere meet a id || ae f “a F : | Spe Ur L S ae Fig. 3 Test circuit and waveform reverse recovery time. Input signal: Rise time of the reverse pulse, 6 ns; reverse pulse duration, tp = 100 ns;duty factor, d = 0,08. Oscilloscope rise time, t; =0,35 ns. Circuit capacitance <1 pF (oscilloscope input capacitance “+ parasitic capacitance). Roctifying efficiency = 100 MHz; Vi(ema) = 2V a > 45% our. Mi 5k No 20pF Yo Fig. 4 Test ciruit. n= <9 — Vitemsh/2 April 1992 931 Pntod From CAPS Pat Version 1.2P This Materia Copyichod By Pips Sercneducors,