Scribd Logo
Upload

Welcome to Scribd!

  • Lieberman, Lichtenberg - Principles of Plasma Discharges PDF

    Uploaded by

    Adriana Milena Lozano Fontalvo
    22 views299 pages

    Original Title

    Lieberman, Lichtenberg - Principles of Plasma Discharges.pdf

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    22 views299 pages

    Lieberman, Lichtenberg - Principles of Plasma Discharges PDF

    Uploaded by

    Adriana Milena Lozano Fontalvo

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 299
    PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING MICHAEL A. LIEBERMAN ALLAN J. LICHTENBERG ®) |A Wiley Interscience Publication JOHN WILEY & SONS, INC. Now York /Chichestor Bris oni © 98 yt Wy S08 Ayn sinc of wt ho Sema set sn ft bay of ons Calg in Pbiton Dae Tce Sy ma rai / certs To CONTENTS accel car PREFACE ‘SYMBOLS AND ABBREVIATIONS PHYSICAL CONSTANTS AND CONVERSION FACTORS PRACTICAL FORMULAE 4. INTRODUCTION LLL Mates Processing / 1 1.2 Plasmas nd Seats) 6 Plasmas / 6 Seats / 1 13 Discharges / 16 RE Diodes / 16 High-Density Sources [19 14, Symbols and Units 23 2. BASIC PLASMA EQUATIONS AND EQUILIBRIUM 2A Inaction 125 22 Field Equations, Curent, and Volage / 26 Mars Equations J 26 23 The Conservation Equations / 31 Bolkzmann’s Equation / 31 Macroscopic Quanuies | 32 Particle Conservation / 33, Momentum Conseration J 34 Energy Conservation 36 Summary / 37 24 Egulibim Properties / 37 Boltzmann's Relation / 39 Debye Length 40 Quisneuraity 42 ATOMIC COLLISIONS 4s 2 Basie Concepts / 48 Eli an Inelastic Collisions / 45 Colson Parameters (46 Dieenial Searing Cross Section / 48 32 Colson Dynamics / 51 Center f-Mas Coonints / 1 Energy Transfer / St Small-Ange Seateing / $5 33. BlateScatering 57 Coulomb Colson / 57 Polrzaton Seaterng / 60 34 Inelastic Collisions / 64 ‘Atomic Energy Levels / 64 "etre Dipole Ration and Metasuble Atoms (68 ection fnization Cros Section ( 71 Eleton Excitation Cos Section / 72 Ton-Atom Charge Tnser / 73 {o-Atom Fonizton {71 45. Averaging Over Distbutions and Surface Etats / 77 “Averaging Over a Maxwellian Distribution J 77 neigy Loss per Bleston-fon Pir Created 81 Surface Efe / 82 PLASMA DYNAMICS. 8, 4.1 Base Motions / 85 Motion in Constant Fils / 8S a 4a 45 46 FX Bris / 88 Eneray Conservation / 89 Nonmapntized Plasma Dynamics / 9 Plasma Oxillations / 91 Dielectric Constant rd Conductivity / 93 Ohmi Heng ( 96 leewomapnaic Waves / 97 Electorate Waves / 98 (uiting Center Motion / 100 Pall Fore / 101 [Adiabatic Constancy ofthe Magnetic Moment / 102 Drift Duet Motion Along Fie Lines (Curvature Daft) / 108 Drift Due 19 Gyraton(Graient Dri) | 104 Position Dit / 108 Dynamics of Magntized Pasa | 107 Dielectric Tensor 108, The Wave Dispersion / 110 ‘Waves in Magnetized Plasmas / 111 Principal Becton Waves / 112 Praga Waves Including lon Dynamies 115 ‘The CMA Diagram J 117 Wve Diagnosis / 120 Imecferometer/ 120 Cevity Perubaion |122 Wave Propagation / 124 DIFFUSION AND TRANSPORT 19 st sa Basi Reaions / 129 Dison and Mobility J 128 Free Diffsion / 130, Abiola Difosion / 131 Dilfsion Solutions / 132 ‘One-Dimensional Te-Dependent Solution / 132 ‘One-Dimensional Steady-State Solution / 134 Low-PressureSolations | 137 ‘Varah Mobility Model /137 Langmuir Solution 139 Diflsion Aerossa Magnetic Feld 140, ‘Ambipola Diffusion / 143 ss Magostic Mulipole Confinement 146 Magnetic lds 146, Plasma Confinement 18 Leak Wath w J 150 6 DCSHEATHS 6 62 63 6s 66 ‘Basie Concepts and Eauaions / 154 The Colson Shea (156 “The Bot Sheath Criterion / 157 Presheath Reqiremens / 158 ‘Sheath Plena at Floating Wall J 160 ‘The High Volage Sheath / 164 Marx Sheath / 164 (Child Law Sheath J 164 (Generalize Crit fr Sheath Fornation | 166, lecronepatve Gases 167 Colisional Sheath / 170 letotatic Probe Diagnostic / 171 Planar Probe With Colsinless Sheath / 174 Non Mawelin Blecuons (175 Clinical Probe With aColisonless Sheath 178 Double Probes and Emisive Probes 181 Probes in Time-Varying Fics / 184 Effect of Colsions and DC Magnetic Fels J 185 Probe Cmsriction and Circuits / 186 7, CHEMICAL REACTIONS AND EQUILIBRIUM a 2 13 1 1s Ineodvction 191 Energy and Enthalpy / 192 ntopy and Gis Free Eneey J 199 Gis Free Energy 203, Chemical guiitium 205 Presue and Temperate Variations / 208 Heseropenous Eqiiriom / 210 “Equiliboum Berween Phases / 210 ulirum ata Surface 213, 154 1 {8 MOLECULAR COLLISIONS a7 8.1 Intodution / 217 82 Molecular Stctire (218 ‘Vitratonal and Rotational Motion / 219 sical Emission / 221 [Negative los / 224 83. Flecten Clisions With Molecules 224 Dissociation | 225 Dissociative loiztion / 227 Dissociative Recombination (227 Example of Hysrogen / 228 Dissociative Eleewon Attachment / 229 Pola Dissociation | 232 Metastable Negative Los / 252 let Impact Detachment / 233, ‘Vibrational and Rotational Exeitations / 233 Elastic Setering / 234 84 Henvy Patil Collisions / 234 Resonant and Nonesonant Charge Transfer 236, Postve-Negative fon Resombination / 238 Associative Detachment / 239 “Transfer of Excitation / 281 Rearrangement of Chemical Boas 243, Ton-Newtal Elsi Satering / 244 Thee Body Processes 245, 8S Reston Rte nd Detaled Balancing / 246 “Temperature Dependence / 247 The Principle of Dele Baancing / 248 [A DataSet for Oxygen / 251 86 Optical Emission and Actinometry / 254 Opsial Emission / 256 OpsialActinometry 1 258 Atom Actnomesry | 259 CHEMICAL KINETICS AND SURFACE PROCESSES 265 9.1 Elementry Reactions / 265 Relaion 1 Equlieiam Constant / 268 9.2 Gas Phase Kinetics / 269 it Onder Consecutive Reactions / 270 Opposing Reactions 273, Blmoleculr Association With Photon mission 278 Thrce-Body Association / 275 ‘Three Body Postve-Nepaive fon Recombination / 277 Three-HodyElecton-Lon Recombination / 278 9.3 Surface Processes / 279, Paste lon Newtraization and Secondary Eleton Emission | 279 [Adsorption and Desorption / 283 Fragmentation / 287 Spuuering / 288 94 Surface Kneis / 288 Diffusion of Neural Species / 290 Rate Constant for Ditton 290 Adsorption and Desorption / 292 Dissociative Adsorption and Assocave Desorption / 293, Physical Adsorption 298, Reaction Wiha Surface / 204 Reactions ona Surface / 298 410. PARTICLE AND ENERGY BALANCE IN DISCHARGES TOA tnroductin / 301 102 lecropoiive Pisa Equilibrium / 308 Basic Propenties/ 308 Uniform Density Discharge Medel / 306 [Nonuniform Discharge Mode / 309 103 Elecroneitve Plasma Equilibrium / 312 Ambipolar Diffasion / 312 Oxygen Discharge / 315 Uniform Density Model / 315 Nonunform Blectronegaive Equicum / 318, ‘Approximate Solaions/ 320, Simulation Rests 323, 11 CAPACITIVE DISCHARGES 11 Homogencous Model / 328 Pama Admitanee / 330, Sheath Admitance / 330 sar Panicle a Energy Balance / 334 Discharge Parameters / 337 Inomogencous Model / 338 Colisioniess Sheath Dynamics / 340 Child Law 7 342 Sheath Capacitance [343 Onmic Heating (48 Stochastic Heating 1345, Seltconssent Model uations / 345 Sealing (3 Collisions Sheaths / 350, ‘Low and Moderate Votes / 352 ‘Ohmic Heating inthe Sheath / 353, Fst Sheath Heaing / 353 Experiments and Simulations 384 perimental Ress / 384 Parite-in.Cel Simulations / 358, Roleat Secondaries | 367 Aplications fr Modeling / 368 “Asymmetric Discharges / 368 ‘Capacine Votuge Divider / 368 Spherical Shell Model / 370 Magnetally Enbanoed Discharges / 373, ‘Theory 374 Experimental Ress / 377 Matching Networks and Power Measurements / 378 Power Measorements 382 INDUCTIVE DISCHARGES 307 12.1 High-Density, Low Pressure Discharges / 388 Inductive Source Configurations / 388 Power Absorption and Operating Regimes / 390 Discharge Opecation nd Coupling (392 ‘Capacitive Couping | 394 Matching Network / 395 Other Operating Regimes / 396 Low-Density Operation | 396 Power Transfer Efciency 397 High Presse Discharges / 398 8 “ 123. Planar Coit Coniston / 399 124 Metical Resonator Discharges / 404 \WAVE-HEATED DISCHARGES a 13.1 Elston Cyclotron Resonance Discharges / 413 (Characteristics and Configurations J 413, lectron Heating J 418 Resonant Wine Absorption | 422 ‘Model and Simulations / 428 Plasma Expansion (429 Measurements / 433 1.2 Helicon Discharges 434 Helicon Modes / 435 ‘Anveana Coupling (438 ison Mode Absorption / 48 183 Surface Wave Discharges / 443 Planar Surface Waves / 483 linda Surace Waves 44S Power Balance / 46 Dc DISCHARGES 450 14.1 Qualitative Charcteritis of Glow Discharges / 480 Positive Columa / 451 Cathode Sheath / $52 [Negative Glow and Farsday Dark Space / 452 Anode Fall / 482 14.2 Analysis ofthe Positive Colma / 434 Calelaon of Te / 484 Calelation of E and ny £458 143 Analysis ofthe Cathode Sheath J 457 ‘Vacuum Breakdown / 487 Cathode Sheath / 461 44 The Negative Glow and Faraday Dark Space 46 U.S. Planar Magneon Discharges / 465 [Limiations of Glow Discharge Sptering Source / 465, Magnewon Configuration / 456 Discharge Mosel (467 16 ETCHING an 15.1 Etch Roqiemens and Processes / 672 Pasa Bich Requlements | 473 Etch Process / 477 152 Etching Kneis / 480 ‘Surfce Kinetics / 81 Discharge Kinetics 485 Chomical Famework / 489 153 Halogen-Atom Etching of Silicon / 490 ‘Pure Chemical F-Atom Exching / 490 Jon Enegy-Driven Atom Etching / 494 (CF, Discharges / 497 (and Hy Feedstock Additions / 501 (Cl-Atom Eiching / $03 154 Other Ech Systems / $04 and CF, Etching of SiO, / 50S SiN Etching / 506 ‘Alumina Etching / 07 Resist Etching / 508 16 DEPOSITION AND IMPLANTATION siz 16.1 Invoduction / S12 162 Plums-Enhanced Chemical Vapor Deposition / $18 Amorphous Sion / 18 Silicon Dioxide / 518 Silicon Nivide / 522 163. Spoter Deposition / 522 Pryseal Sparing / 322 Reactive Sparing 525 164. Plasma-Inmesin on Implantation J $26 Colisionless Sheath Model (528 Colisional Sheath Model / 533, Applications of Pil to Materials Processing / $36 ‘A COLLISION DYNAMICS. sat Coulom Cros Section / 848, wiv conTeNTs: 8 THE COLLISION INTEGRAL AND KINETIC THEORY ser Boltzmann Collision Imepral S47 Maxwelan Disrittion $38 The Krook Collision Opertor / 549 ‘Kinetic Equations for Electrons / $50, Diffusion and Mobility J S81 Druyestyn Distibation / 552 lecton Distribtion nan RE Feld / $53 © STOCHASTIC HEATING IN AN INDUCTIVE DISCHARGE 555 REFERENCES 559 INDEX 565 PREFACE THs book dices he indamenal inp of pally onan, chile dete phoma dacargs and el ao in iS proceang, Psa proerng {i hghtectology dnipine born ot ofthe need to acess 8 parameter space dn mato procening uate by scl chemical met. The eld tedcpinary, combing he areas of pasa psc, suc scene, ease ‘hemi and stoic and molecular physics. The common heme the cretion and theo puma to aves cain of emia acto a tube sara Ot Sesmeats many ested o dacarge at aw resus ne The nt positive p within the shes leas Yo pote pote {4G thas postive within the pms and all sharply to ero eat oth walls. Ths coiling potential "vale" for elestons a a" for ons Dae the FIGURE 1.10, The fomatn of psn shat: (ain fon and elton deste and ‘Poenia (b) dontes cece eld and pocmial wer formation a he sheath, cleric olds within the seats point fom the plasma othe wl, Thus he force ef, acting om econ i dct into the plasms threes electrons sing toward the walls ack into the plasma. Conversely ons fom the plana ct the sheaths are accelerate inc the walls IF the pasa penal (vith respect 10 te wal) x V, then we expect hat V,~ afew Tein ode o confine most ofthe clcrons. The energy af ons bombarding the walls shen €, ~ afew Te, Charge uncovering sweated quaniaivel in Chapter 2, and sheaths ia Chapter 6 Figure 1.11 shows shes formation a obtained from a particle cell (PIC) plas simulason. We use PIC real throughout this book to illstrte various discharge phenomena Inti simulation, te lf wal gree, the cght wl s floating (zero net current) andthe postive ion density is wifor and constant in time. The electrons ae mcd 38.1 sheets having charg-to-mase ratio em that move none dimension along ) unde the action of the ime varying els produced by all the eter sees, the xed ion chuge densi. and te charges onthe Wall Bletrons donot colie with oer econ, ns of neta in thi salto, Four thousand shets were wed with T. = | Vand n= m= 10! mat ime = 0. (2), (), and (2, we ee the vx electron phase space, electon deny, electric fel. and potential afte the sheath as formed at = 0.77 ws. The ine history of Nis shown in (40 shets Rave been fost © for the sheaths. Figures 11a som the absence of electrons ear ech wall ver «teat width 5 = 6 mn, Except fr cations de to he rite A, the eld in the lk plas sear 2xo andthe fei he sheaths are large and poi rom the pasa othe walls. (E, is egative ensiy 1013 0 = on ® FIGURE 11 comin) PIC sinsaiono postive oe sheath fran: (ele ey, rr Se ma 206 09 ° oe : SERS / ERS eae / 20+ 06 5 fies cr FIGURE LM i ino f one oa rat 0) ve ae space, ih ronal eal et FIGURE 1.11 (conned) PIC simaaon of postin fon seth fort: () esi Re « * on « FIGURE Lit, (comma PIC srl of postin io seh aman: (2) poet xw pap ee FIGURE. L11, (omimed) PIC simuision of pose fon shh fom: 6) ston rer Yeu tie rin sos 028s ‘Bie FIGURE 11, (comin) PIC soul of ps he shen oat: (eh hat tea seus ne the lft wal and postive tthe ight walla rept pam electrons) The poems in the cer ofthe discharge is Vp 25 V and fal to 210 atthe left Wall (his ‘all is prounded by definition). The pena atthe ight wali also low, but we sce in) tha oniles i ns. We wil se in Chapter 4th thes are plasma ‘nilaions, We would not ce them ifthe nil sheet postions and velocities were ‘hosen exactly symmetrically about the midplane o if many more sheets were ued inthe simulation If the fons were also male as moving shoes, then on longer ie seal we woul se fon acceleration within the sheath, and consequent drop in ton density ‘ear the walls acho in Fi. 10h We ctr o hs in Chae 6. “he separation of ascharges imo talk plasma and sheath regions i an impor. ‘an paradigm tha applies oll icharges, The blk repon is gussneual, and ‘oth instanttnens and time-averaged els ae Tow. The bulk plasma dynamics are descr by five om last high pressures aby Feil on lost low pes sures. Inthe postive space charge sheaths, high fel exis leading to dyaamics hat sre described by various on space charge sheath as, nding To-vltage sheaths tnd vaio high ote sheath models, sch scolisionless and collisional Child laws and hei modiications The plasma and sheath yams ust be joined at their imetace, As wil be seen in Chapter 6, teu joiing contin iso require hat the mein jon veloety a the pasmuseath edge be equal othe fo-soand (Bohm) elo ug = (ee /M)"” where e and MT are the charge and mas ofthe jon and “Teithe cecwon emgeraure in vl. 13. DISCHARGES Rt Diodes Capacvey driven radio frequency ()dlscharges—so-ale rf dades—are com ‘monly wed for materials processing. An iealioed dacharge i plane pall ge ‘met, sown in Fig 12a, consists of a vacuum chamber consinng two plana lestroes separated by a spacing I and deven by an rf power source. The sab sates ate paced on one elecode fedstock gases a admit o ow trough the Aiscarge, and eluent gases are removed by the vacaum pp. Coanal discharge omer, such as the “hexoe” shown ia Fig 1.12, are also in widespread we ‘Typical parameters are shown in Table Ll. The ypc of ving voltage is Ve = 100-1000 Vand te plate sepazatons/ ~ 2-10. m, When operated at low pressure, with the wafer mounted onthe powered electrode, nd ured o remove ssa me ‘ei, such reactors ae commonly elle reactive ion etchers (RIES) miso, since the echng is a chemical proces enanced by energetic fon Bombarment of the substrate, rather than 2 removal process de fo active ons alone, For anisotropic eching, ically pressures are inthe ange 10-100 iT, power ensies ae 1-1 Wom the ving frequency 13.56 MHz and mate wafer stems are common Typical plas dense ae relatively lo, 10"-10"'em and theelecrontemperatre sf order 3. on aceeraton energies ath vag) ate high, rater than 200 Vand fatonaloaization slow. The degre of dissociation of {the molecules ino eave spies ised measured hu can ange wie for ss than 0.1% to nearly 100% depending on gas composition and plana condtons. For

    You might also like