Nghch Lu Tng p Ci Bin vi Dng Ngun Lin Tc

An Improved Single-Phase Switched Boost Inverter with Continuous Input

Current
*
*

Nguyn Minh Khai

H S phm K thut TP. H Ch Minh

Email: khaibk@ieee.org

Abstract
Because the switched boost inverter has one less LC pair compared to the Z-source inverter (ZSI), it can replace the ZSI
in low power applications. This paper improves the limitations in the switched boost inverter for increasing the boost
factor and making a continuous input current. It has the same components with the conventional switched boost
inverter. This paper shows the operating principles and analysis of the improved switched boost inverter. Also, a
laboratory prototype was constructed based on a DSP TMS320F28335 with 36 V dc input and 110 Vrms/50 Hz AC
output to verify the performance of the inverter.

Keywords
Single-phase inverter, boost inverter, shoot-through, Z-source inverter.

Tm tt
Nghch lu tng p (switched boost inverter) c th thay
th nghch lu ngun-Z (Z-source inverter) trong ng
dng cng sut thp bi v n s dng t hn mt cp LC
so vi nghch lu ngun-Z. Bi bo ny ci tin nhng
vn cn tn ti trong nghch lu tng p truyn thng
nhm tng h s tng p v to dng in ngun lin tc.
N s dng cc thnh phn linh kin ging nh nghch
lu tng p truyn thng. Bi bo tp trung vo phn tch
hot ng nghch lu tng p ci bin. Cc kt qu l
thuyt c kim chng bng thc nghim trn vi iu
khin DSP TMS320F28335 vi in p mt chiu ng
vo 36 V v to ra in p xoay chiu 110 Vrms/50 Hz.

K hiu
K hiu

n v

ngha

Vdc

ngun p vo

VPN

in p trn thanh ci DC

VC

in p trn t

iin

dng in ngun

iPN

dng in chy qua thanh

ci DC

Ch vit tt
PWM

pulse width modulation

DCM

discontinuous conduction mode

DSP

digital signal processing

IGBT

insulated-gate bipolar transistor

1. Phn m u

Cc b nghch lu ngun p (voltage source inverters)

[1]-[2] c s dng rng ri trong iu khin ng c
in xoay chiu, b lu in (UPS), h thng phn phi
in, xe in Tuy nhin b nghch lu truyn thng c
mt vi hn ch nht nh: 1) in p xoay chiu ng ra
khng th ln hn in p ngun mt chiu cung cp, hay
ni cch khc n ch th hin l b nghch lu gim p; 2)
hai kha bn dn trn cng mt nhnh khng c ng
cng lc v khi ngn mch ngun p mt chiu s xy
ra lm h hng thit b, v khong thi gian cht
(deadtime) trong qu trnh chuyn mch ca 2 kha bn
dn ny phi c to ra vi kt qu lm tng mo
dng p ra. i vi nhng ng dng, ni m b nghch
lu phi p ng c yu cu tng p v gim p, th
mt b chuyn i tng p in mt chiu (dc-dc boost
converter) phi c thm vo pha trc b nghch lu.
Kt qu l s c hai giai on chuyn i (dc-dc, dc-ac).
iu ny lm tng kch thc, tng gi thnh. khc
phc nhng hn ch ca nghch lu truyn thng, nghch
lu ngun-Z (Z-source inverter) c ngh trong [3].
Trong nghch lu ngun-Z, in p ng ra c iu
khin tng hay gim ch qua mt ln chuyn i thng
qua t s ngn mch. Vic cho php hot ng ngn
mch (shoot-through) ng ngha vi vic khng c thi
gian cht trong qu trnh chuyn mch, lm cho ci thin
c cht lng in p ng ra. Trong nhng nm gn
y, nghch lu ngun-Z c pht trin v nhn c
nhiu s quan tm nghin cu. Cc nghin cu v nghch
lu ngun-Z bao gm: m hnh ha v iu khin [4], [5],
k thut iu ch rng xung (PWM) [6], ng dng
trong nng lng ti to [7] v pht trin cc cu hnh
ngun-Z di nhiu dng khc nhau [8]-[10].
Tuy nhin, vic s dng hai cun cm v hai t in
trong nghch lu ngun-Z lm tng kch thc v gi
thnh ca b nghch lu. i vi nhng ng dng cng
sut thp ni m kch thc, trng lng v gi thnh l
yu cu hng u th c v nghch lu ngun-Z khng l
la chn ti u. Nghch lu tng p (switched boost

inverter) c ngh trong [11] v [12] da trn cu

hnh Watkins-Johnson ngc c th l la chn thay
th nghch lu ngun-Z trong mt vi ng dng. Nghch
lu tng p ny c c tnh hot ng ging nh nghch
lu ngun-Z do c trng thi hot ng ngn mch.
Nhng n li s dng t hn mt t in, mt cun cm
v nhiu hn mt kha bn dn. Khi so vi nghch lu
ngun-Z, nghch lu tng p pht ra h s tng p thp
hn. Ngoi ra trong nghch lu tng p, dng in ngun
hot ng khng lin tc (DCM) vi bin nhp nh
ln, nh hng n cht lng ca b ngun v i khi
mch lc ngun cn c s dng bo v ngun dn
n tng kch thc cng nh gi thnh.

cm, mt t in, mt kha bn dn v cu nghch lu

mt pha.

Bi bo ny dn ra b nghch lu tng p ci bin vi cc

c tnh: dng in ngun hot ng ch lin tc v
ci thin h s tng p. Phn tch mch v l thuyt hot
ng c trnh by. Cc kt qu l thuyt c kim
chng bng thc nghim trn vi iu khin DSP
TMS320F28335. Lu rng, tt c cc cu hnh nghch
lu c ch ra trong bi bo ny c cu trc mt pha v
chng cng c th c p dng cho cu trc ba pha.

H. 2

2. Nhng cu hnh c bn ca nghch lu

ngun-Z v nghch lu tng p
2.1 Nghch lu ngun-Z c bn (Z-source inverter)
H. 1 ch ra cu hnh mt pha nghch lu ngun-Z c bn
[3] vi mng tr khng hai ca (Z-impedance network)
c chn vo gia cu nghch lu v ngun DC. Mng
ngun-Z ny bao gm hai cun cm, hai t in v mt
diode ng vai tr tng p ng thi gip lc cc sng
hi ca b ngun. N cho php hai kho bn dn trn
cng mt nhnh kch ng ng thi, trng thi ny b
cm trong bin tn thng thng v xy ra hin tng
ngn mch gy ph hng linh kin. Do vy bin tn
ngun-Z hot ng an ton hn. Khong thi gian ngn
mch ny c dng tng in p trn thanh ci DC.
T s gia in p trn thanh ci DC, VPN v in p ng
vo Vdc (tm gi l h s tng p) c xc nh [3]:

Bz

VPN
1
1

,
Vdc 1 2T0 / T 1 2 D

(1)

trong T0 l khong thi gian ngn mch trong sut chu

k ng ngt T v D = T0/T l t s ngn mch trong mi
chu k.

Cu hnh nghch lu mt pha tng p c bn

Ging nh nghch lu ngun-Z, nghch lu tng p cng

c trng thi ngn mch tng in p trn thanh ci
DC. Nghch lu tng p s dng nhiu hn mt kha bn
dn v mt diode nhng t hn mt cun cm v mt t
in so vi cu hnh nghch lu ngun-Z. H s tng p
ca nghch lu tng p c xc nh trong [12]:

Bs

VPN
1 T0 / T
1 D

Vdc 1 2T0 / T 1 2 D

(2)

So snh (2) vi (1), h s tng p ca nghch lu tng p

truyn thng nh hn (1-D) ln so vi h s tng p ca
nghch lu ngun-Z. y c th xem l mt nhc im
ca nghch lu tng p truyn thng khi m h s tng p
trong nghch lu c quan tm. Ngoi ra, nh ch trong
hnh 2, do ngun mt chiu mc ni tip vi diode Da nn
khi diode Da ngt, dng in qua ngun bng 0. iu ny
lm cho dng ngun hot ng khng lin tc v mt b
lc ngun dng i khi phi c mc vo pha trc
ngun mt chiu bo v b ngun.

3. Nghch lu tng p ci bin

khc phc nhng hn ch ca nghch lu tng p
truyn thng, lm cho n c kh nng ng dng thay
th nghch lu ngun-Z, H. 3 ch ra cu hnh ngh ca
nghch lu tng p ci bin. N s dng nhng thnh
phn thit b ging vi nghch lu tng p truyn thng.
Mt mch lc LC c mc sau cu H loi b thnh
phn hi bc cao. Nh ch trong H. 3, ngun mt chiu
lc ny c mc trc tip vi cun cm nn dng ngun
chnh l dng qua cun cm v n c tnh lin tc.
L

V c1

V
c2

S1
Vdc

vPN

S0
H. 1

Cu hnh nghch lu mt pha ngun-Z c bn

2.2 Nghch lu tng p c bn (switched boost

inverter)
H. 2 ch ra cu hnh mt pha nghch lu tng p c bn
trnh by trong [12]. N bao gm hai diode, mt cun

H. 3

S3

Da

C
Db

Vc S2

Lf

io

Cf
S4

Cu hnh nghch lu mt pha tng p ci bin

vo

VPN VC

1
Vdc .
1 2D

(6)

H s tng p ca nghch lu tng p ci bin c xc

nh:

Bi

H. 4

Cc trng thi hot ng ca nghch lu tng p ci

bin: (a) ngn mch (shoot-through) v (b) khng ngn
mch (non-shoot-through).

VPN
1

.
Vdc 1 2 D

(7)

T phng trnh (7) v so snh vi (1) v (2), ta nhn

thy rng h s tng p ca nghch lu tng p ci bin
ln hn h s tng p ca nghch lu tng p truyn
thng v bng vi h s tng p ca nghch lu ngun-Z.

Ging nh b nghch lu ngun-Z, nghch lu tng p ci

bin cng c cc trng thi ngn mch (shoot-through
states) bn cnh hai trng thi tch cc v hai trng thi
vecto khng trong cu hnh mt pha. V th nhng trng
thi hot ng ny c th tng ng thnh hai trng
thi chnh: ngn mch v khng ngn mch. H. 4 ch ra
s mch tng ng ca trng thi ngn mch v
trng thi khng ngn mch.
Trong trng thi ngn mch nh ch trong H. 4(a), b
nghch lu b ngn mch bi kha bn dn trn v di
ca cng mt nhnh. Trong sut qu trnh ny, kha bn
dn S0 c kch ng lm cho cc diode Da v Db khng
dn in. Cun cm lu tr nng lng trong khi t in
x nng lng. Ta thu c cc phng trnh tng ng:

di L
L
V dc V C
dt

C dV C i .
in

dt

(3)

Trong trng thi khng ngn mch nh ch trong H. 4(b),

b nghch lu c hai trng thi tch cc v hai trng thi
khng. Trong sut qu trnh ny, kha bn dn S0 c
kch ngt, cc diode Da v Db dn in. T in c np
nng lng t ngun trong khi cun cm chuyn nng
lng t ngun n ti. Ta c:

di L
L
V dc V C
dt

C dV C i i .
in
PN

dt

(4)

Lp cc phng trnh in p trung bnh qua cc cun

dy, dng trung bnh qua t v cho cc gi tr trung bnh
ny bng khng theo l thuyt cn bng in p ca cun
dy, v l thuyt cn bng dng in ca t, t (3) v (4),
ta c:

VC 1 2 D Vdc

i 1 2 D i .
PN
in
1 D

Gin xung iu ch sng sin cho nghch lu mt pha

tng p ci bin.

H. 5

H. 5 m t gii thut iu ch rng xung (PWM) cho

nghch lu mt pha tng p ci bin. Hai sng iu khin
vcontrol v vcontrol c so snh vi sng mang tn s cao
vtri pht ra tn hiu iu khin cc kha bn dn S1 n
S4. Mt ng thng c gi tr in p khng i c so
snh vi mt sng mang tn s cao khc (ng nt t
vi tn s gp i v bin bng mt na vtri ) pht ra
tn hiu iu khin cho S0 . Tn hiu S0 ny sau c
chn vo S1 n S4 thng qua cng AND logic pht ra
trng thi ngn mch trong cu nghch lu. Gi tr nh
ca in p xoay chiu ng ra c xc nh:

v o MVPN M

1
Vdc .
1 2D

(8)

Trong , M l h s iu ch rng xung. li in

p nghch lu c nh ngha:

(5)

Gi tr nh ca in p t ln thanh ci DC chnh l
in p trn t in xy ra trong trng thi khng ngn
mch H. 4(b), ta c:

Gv

Vdc

M B M

1
.
1 2D

(9)

Theo phng php iu ch rng xung trong H. 5,

khong thi gian ngn mch ch nn c thm vo trong
trng thi khng (zero state) o bo qu trnh ngn
mch khng lm nh hng n cht lng dng sng

ng ra. V th t s ngn mch c gii hn bi D 1

M. t c gi tri in p ng ra ln nht, thng
thng D c chn bng (1 M). Do vy phng trnh
(9) c vit li:

G M B

M
.
2M 1

iu rng xung ln so vi nghch lu tng p truyn

thng pht cng gi tr li. Khi s dng h s iu
rng xung ln ng ngha vi vic cht lng dng sng
ng ra tt hn, mo dng hi tng thp. Bng 1 so
snh nghch lu tng p ci bin vi cc b nghch lu
truyn thng.

(10)

4. Kt qu th nghim
kim chng tnh nng hot ng ca bin tn tng p
ci bin, chng ti xy dng mch th nghim da trn
vi iu khin DSP TMS320F28335 vi cc thng s sau:
Vdc = 36 V, L = 4.7 mH, C = 470 F, Lf = 3 mH, Cf = 20
F, and R = 70 . Tn s ng ngt ca bn dn S1 n S4
l 10 kHz; tn s ng ngt ca bn dn S0 l 20 kHz; v
tn s sng sin ng ra l 50 Hz. Cc linh kin bn dn
IGBT ca S1 n S4 c dng l GW30NC60VD (c
cha diode) trong khi IGBT ca S0 l G23N60_UF
(khng cha diode). Diode Da v Db c dng l
DSEP30-12AR.

H. 6

Quan h gia li nghch lu p v h s iu rng

xung ca nghch lu tng p truyn thng so vi nghch
lu tng p ci bin.

Bng 1: So snh nghch lu tng p ci bin vi cc b

nghch lu truyn thng
Nghich lu
tng p c
bn [12]

Nghich
lu
ngun-Z
[3]

Nghich lu
tng p ci
bin

Kha bn
dn

Diode

T in

Cun cm

VC

1 D
Vdc
1 2D

1 D
Vdc
1 2D

1
Vdc
1 2D

1 D
1 2D

1
1 2D

1
1 2D

M2
2M 1

M
2M 1

M
2M 1

(a)

(b)
H. 7

H. 6 ch ra mi quan h gia li nghch lu p v h

s iu rng xung ca nghch lu tng p truyn thng so
vi nghch lu tng p ci bin. Vi cng mt gi tr iu
rng xung, nghch lu tng p ci bin pht ra li in
p cao hn so vi nghch lu tng p truyn thng. Hay
ni cch khc, nghch lu tng p ci bin s dng h s

Kt qu th nghim nghch lu tng p ci bin vi D =

0.44, M = 0.56 v Vdc = 36 V . T trn xung: (a) p
ng vo (25 V/div.), p trn t (100 V/div.), p ng ra
(250 V/div.) v dng trn ti (5 A/div.) vi thi gian: 4
ms/div; (b) dng ng vo (5 A/div.), p trn diode Db
(250 V/div.), p trn diode Da (250 V/div.) v p ti
thanh ci DC (250 V/div.) vi thi gian: 20 s/div.

H. 7 ch ra kt qu th nghim ca nghch lu tng p ci

bin vi D = 0.44 v M = 0.56. Theo kt qu tnh ton t
cng thc (6) v (8) ta tnh c VPN = Vc = 300 V v tr
hiu dng ca p ra l 118 Vrms. Nh ch trong H. 7 vi
kt qu th nghim, in p trn t v trn thanh ci DC
c tng n 280 V v 284 V t 36 V in p ng
vo. in p xoay chiu o trn ti l 110 Vrms/50 Hz.
Nh ch trong H. 7(b), dng in ng vo l lin tc. Gi
tr o c trong kt qu th nghim thp hn gi tr tnh
ton l do nhng phn t k sinh xut hin trong mch th
nghim, trong khi l thuyt b qua trong qu trnh tnh
ton. Kt qu ny ph hp vi phn tch trn.

5. Kt lun
Bi bo trnh by b nghch lu tng p ci bin vi
cc tnh nng vt tri so vi nghch lu tng p truyn
thng nh: kh nng tng p cao, dng ngun lin tc.
Nghch lu ci bin c cc c tnh hot ng ging vi
nghch lu ngun-Z v kh nng tng p. So vi nghch
lu ngun-Z, nghch lu ci bin s dng thm mt kha
bn dn v mt diode nhng li gim c mt t in v
mt cun cm. Do vy nghch lu tng p ci bin c th
c dng thay th nghch lu ngun-Z trong cc ng
cng sut thp, khi m kch thc v trng lng ca b
nghch lu l yu t tin quyt. Phn tch mch v l
thuyt hot ng c trnh by. Kt qu th nghim
kim chng cc c tnh ca nghch lu tng p ci bin.
B nghch lu ny c th c ng dng trong vic
chuyn i nng lng ti to c in p u vo thp
nh quang in hay pin nhin liu thnh in p xoay
chiu tr s cao.

Ti liu tham kho

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