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Chapter 4 Results and Discussions
Chapter 4 Results and Discussions
Chapter 4
This chapter describes the experimental conditions and the characterization results of
the deposited Cu2O thin films. Optical and Electrical characterization have been studied
and discussed for samples prepared for different time duration at constant oxygen
inflow rates. Detailed results have been presented and discussed in the subsequent
sections.
Six different samples of Cu2O and two samples of TiO2 were prepared as the
experimental conditions mentioned in Table 4.1. These samples were studied for,
Spectroscopic Ellipsometry. Apart from this Cu2O and TiO2 were deposited on nSilicon and current-voltage characteristics were measured using SourceMeter 2400.
Table 1 Experimental conditions for Cu2O deposition
Slide Number
1
2
3
4
5
6
Oxygen
inflow
(sccm)
50
50
50
50
50
50
Power (%)
Pressure
Deposition
1%
37.110-1 Pa
1 min
1%
38.1810-1 Pa
3min
1%
1%
1%
1%
Duration
37.110-1 Pa
38.1810-1 Pa
37.1710 Pa
-1
37.1710 Pa
-1
35 | P a g e
1min
3min
5min
5min
Pressure
Deposition
1.4710-3 Pa
3 min
(sccm)
1%
1%
1.4710-3 Pa
Duration
3 min