Bipolar Junction Transistor (bjt) has 3 semiconductor regions that is: (a) Base - lightly doped and thin (b) Emitter - heavily doped (c) Collector - moderately doped. For transistor to operate properly as amplifier: a) The BE junction is forward biased (b) The BC junction is reverse biased.
Bipolar Junction Transistor (bjt) has 3 semiconductor regions that is: (a) Base - lightly doped and thin (b) Emitter - heavily doped (c) Collector - moderately doped. For transistor to operate properly as amplifier: a) The BE junction is forward biased (b) The BC junction is reverse biased.
Bipolar Junction Transistor (bjt) has 3 semiconductor regions that is: (a) Base - lightly doped and thin (b) Emitter - heavily doped (c) Collector - moderately doped. For transistor to operate properly as amplifier: a) The BE junction is forward biased (b) The BC junction is reverse biased.
(a) Base lightly doped & thin (b) Emitter heavily doped (c) Collector moderately doped 2. BJT has 2 pn junction: (a) NPN (b) PNP 3. For transistor to operate properly as amplifier: (a) The BE junction is forward biased (b) The BC junction is reverse biased 4. Characteristic of curve: (a) Saturation From point A to point B, as Vcc increases, Vce increases and Ic increases. (b) Active From point B to point C, the curve is level off and Ic become constant even Vce continue to increases. This is because the BE junction become forward bias and create a depletion region large enough to offset the increase in Vce, thus Ic is constant. (c) Breakdown From point C to infinity, Ic start to increases very rapidly with any increases in Vce. 5. Application: (a) Amplifier (b) Switch