Effect of Ni Film Morphology on Graphene

Characteristics Grown by Chemical Vapor Deposition

Myung Hee Junga, Yun Sung Woob, Sunae Seob, Byung Hee Honga,c*
a
SKKU Advanced Institute of Nanotechnology(SAINT) and
Center for Human Interface Nano Technology(HINT),
Sungkyunkwan University, Suwon 440-746, Korea
b
Samsung Advanced Institute of Technology Suwon (S.A.I.T), 440-600,Korea
c
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea

SAINT
 What is the Grahpene?
 one-atomic-layer of sp2-bonded carbon atoms
 Fast Electron mobility : ~15000 cm2/Vs (on insulating substrate)
 Outstanding optical Transparency : 97.7%(monolayer)
 Simple patterning process

CNT

Fullerene Graphite

Graphene
 Experimental conditions

Try to get monolayer

by controlling Ni grain size, annealing and cooling velocity.
SEM Images of the Ni thin film surface before graphene growth depending
on deposition temperature .
a)R.T. b) 300℃ c) 600℃
SEM Image after graphene growth
 Conclusion

 Quality of graphene film is likely not to be affected by the grain

size showing a little change of D/G ratio in Raman spectra after
annealing.
 Graphene grown on Ni film sputtered at room temperature,
which will contain much amounts of atomic defects like
dislocations, steps and twins on the surface, obviously showed a
decrease in D peak intensity after annealing.
 The crystallinity of graphene film is dominated by the surface
perfectness of atomic structure rather than the grain size of Ni
film.
Thank you!
EBSD (Electron backscattered diffraction)

•EBSD 는 후방산란전자의 kikuchi pattern 을 이용하여 각각의 결정립의 방위 해석

•결정립의 방위해석 ,misorientation angle 의 측정 , grain size
phase 분포 및 phase 비율등 다양한 정보들은 OIM program 을 사용하여 쉽게 측정

Statistical Advantage
X-ray > EBSD > TEM
 Resolution limit
TEM > EBSD > X-ray