What is the basic working principle of MRAM?

Working Principle of MRAM: MRAM operates on the principle of magnetism for stori
ng bits in memory. MRAM bit cell consists of two ferromagnetic layers, separated
by an insulating tunnel barrier in a sandwich like structure. Read Process: To
read the bit of information stored in this memory cell, the orientation of the m
agnetic moments in the soft layer relative to the pinned layer must be determine
d. Passing a small electric current directly through the memory cell accomplishe
s this: when the moments are parallel, the resistance of the memory cell is smal
ler than when the moments are not parallel. Even though there is an insulating l
ayer between the magnetic layers, the insulating layer is so thin that electrons
can "tunnel" through it from one magnetic layer to the other. The selected cell
?s bit line current and the reference cell?s current are fed into a comparator t
o detect the voltage. Write Process: To write to a particular cell (bit), a curr
ent is passed in orthogonal direction through the two independent wires (one abo
ve and one below) that intersects that particular cell. The resultant vector mag
netic field generated by passing currents in Bit line and Word line causes the s
witching effect of bit cell as it changes the alignment of magnetic moments of t
he two magnetic materials.