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  • Present Day Challenges

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    Nikhila Battula
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    The document discusses the present challenges facing nanotechnology and single-electron transistors. It presents scaling trends of silicon MOSFET transistors and limitations to future scaling like subthreshold leakage, gate oxide leakage, and interconnect density issues. It also discusses single-electron transistors as possible future replacements for silicon MOSFETs and presents silicon island based SETs. Electrical characteristics were used to extract the capacitance components of SETs and their dependence on silicon island size. Binary decision diagram operation was demonstrated as a potential application.

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    The document discusses the present challenges facing nanotechnology and single-electron transistors. It presents scaling trends of silicon MOSFET transistors and limitations to future scaling like subthreshold leakage, gate oxide leakage, and interconnect density issues. It also discusses single-electron transistors as possible future replacements for silicon MOSFETs and presents silicon island based SETs. Electrical characteristics were used to extract the capacitance components of SETs and their dependence on silicon island size. Binary decision diagram operation was demonstrated as a potential application.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    12 views1 page

    Present Day Challenges

    Uploaded by

    Nikhila Battula
    The document discusses the present challenges facing nanotechnology and single-electron transistors. It presents scaling trends of silicon MOSFET transistors and limitations to future scaling like subthreshold leakage, gate oxide leakage, and interconnect density issues. It also discusses single-electron transistors as possible future replacements for silicon MOSFETs and presents silicon island based SETs. Electrical characteristics were used to extract the capacitance components of SETs and their dependence on silicon island size. Binary decision diagram operation was demonstrated as a potential application.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
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    Present Day Challenges And Goals Of

    Nanotechnologyand Single-Electron Transistor.


    Author : M . Brahmanandam Bhatlu,
    ¾ B.tech,
    Department of Chemical Engineering,
    Andhra Universitry College of Engineering (A),
    Visakhapatnam.
    e-mail : brahmi_chem@yahoo.com

    Abstract:-

    Scaling trends of Si metal-oxide-semiconductor field-effect


    transistor (MOSFET) along with a description of to-days 0.13-
    micrometer generation transistors are presented. Subthreshold
    leakage, increased gate oxide leakage, increased transistor parameter
    variability and inter connect density and performance are some of the
    limits to future
    scaling which must be kept in mind while evaluating nanotechnology
    options such as
    single-electron transistors(SETs) as possible future replacements for Si
    MOSFETs. SETs
    based on Si islands are presented. The island size dependence of the
    capacitance components of SETs was extracted from electrical
    characteristics. The capacitance
    between the side wall gate and the Si island extracted from the
    coulomb oscillation phase
    shift of the SETs with side wall depletion gates on a silicon-on insulator
    (SOI) nanowire
    was independent of the Si island size, which is consistent with the
    devise structure. As a
    possible application, binary decision diagram operation was
    demonstrated.

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