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IRINEO P. QUINTO
ECE / REE
MICROWAVE TUBES
KLYSTRON
AMPLIFIER BUNCHER CAVITY CATCHER CAVITY
AMPLIFIES
MICROWAVE
SIGNAL USING
VELOCITY
MODULATION
FORMS HIGH DRIFT SPACE
VELOCITY
ELECTRONS
TYPICAL
EFFICIENCY: 30-
45%; MAX=70%
0.5 – 6.4 GHz
MICROWAVETUBES
REFLEX KLYSTRON
LOW POWER, LOW
EFFICIENCY OUTPUT
MICROWAVE
OSCILLATOR REPELLER
4-200 GHz
<10% EFFICIENCY
ANODE
TYP Po=100 Mw
T = n + 3/4
T – transit time
n – any integer
MICROWAVE TUBES
A DIODE WHICH USES TYPES OF:
THE INTERACTION OF HOLE & SLOT
MAGNET AND VANE
ELECTRIC FIELDS IN A RISING SUN
COMPLEX CAVITY TO COAXIAL
PROVIDE
OSCILLATIONS
10 MW – UHF; 2MW –
X-BAND; 80 Kw – 95
GHz
EFFICIENCY OF 50-
60%
MICROWAVE TUBES
TRAVELING WAVE TUBE CROSS FIELD AMPLIFIER
(TWT) (CFA)
THE INTERACTION BETWEEN CROSS BETWEEN THE
THE BEAM AND THE RF FIELD
IS CONTINUOUS TWT & MAGNETRON
CAN BE USED AS A LOW- PULSED TYPE 1-18 GHz,
LEVEL, LOW NOISE AMPLIFIER 5MW – UHF, 70%; 1
OR AS A HIGH POWER ONE,
EITHER CW OR PULSED
MW – X BAND, 55%
2 – 16 GHz, 30-45 dB GAIN, BACKWARD WAVE
F=4-10 dB, 10-100 mW OSCILLATOR (BWO)
CW 1-100 GHz, UP TO 10 kW,
25-35% effy SHORTER & THICKER
PULSED 2-40 GHz,1-250 kW TWT
MICROWAVE CW
OSCILLATOR
1-1000 GHz
SEMICONDUCTOR MICROWAVE
DEVICES
TRANSISTOR GUNN DIODE
2-4 GHz, 9W, 12-8 WORKS ON THE
dB PRINCIPLE OF
29.5-32.5 dB at 4-6 TRANSFERRED
GHz, 15 mW ELECTRON EFFECT
FET – G=10dB, 9-15 MADE WITH GaAs
GHz, F=7-14 dB AND InP
PARAMETRIC CW 4-75 GHz (1.5W
AMPLIFIER – 50 mW), 12-2%
(TYP EFFY: 2.5-5%)
USES A DEVICE
WHOSE REACTANCE
SUCH THAT THE
AMPLIFICATION
RESULTS
SEMICONDUCTOR MICROWAVE
DEVICES
IMPACT AVALANCHE & OTHER MICROWAVE
TRANSIT TIME DIODE DIODES
(IMPATT) TUNNEL
MADE OF Si OR GaAs VARACTOR
WORKS LIKE TUNNEL SCHOTTKY BARRIER
DIODE PIN
TRAPPED PLASMA
AVALNCHE TRIGERRED
TRANSIT TIME DIODE
(TRAPATT)
PULSED – 600 W, 1
GHz, 75% (TYP:30%)
WAVEGUIDES
A HOLLOW METALLIC ADVANTAGES
TUBE USED TO EASIER TO
PROPAGATE SIGNALS FABRICATE THAN
TYPICALLY FROM 3- COAXIAL LINE
100 GHz BAND NO FLASHOVER
TRANSMIS MULTIPLE BETTER POWER
SIGNAL OVER THE HANDLING
SAME FREQUENCY BUT CAPABILITY (10X AS
IN DIFFERENT MODES MUCH AS COAXIAL
LINE)
LOWER POER LOSS
HIGHER OPERATING
FREQUENCY
BASIC TYPES OF WAVEGUIDES
RECTANGULAR MODES OF PROPAGATION
TRANSVERSE ELECTRIC
(TEmn) 0R H-MODE
Zo = 120π / 1 – (λ/λo)2
λo = 2 / (m/a)2 + (n/b)2
Vg = C sinθ
TRANSVERSE MAGNETIC
Vp = C/sinθ (TM) 0R E-MODE