1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal

Technologies

N
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND
FDLL914 BLACK BROWN
FDLL914A BLACK GRAY
FDLL914B BROWN BLACK
FDLL916 BLACK RED
FDLL916A BLACK WHITE
FDLL916B BROWN BROWN
LL-34 FDLL4148 BLACK BROWN
THE PLACEMENT OF THE EXPANSION GAP
DO-35 HAS NO RELATIONSHIP TO THE LOCATION
FDLL4448 BROWN BLACK
OF THE CATHODE TERMINAL

High Conductance Fast Diode

Sourced from Process D3.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

W IV Working Inverse Voltage 75 V
IO Average Rectified Current 200 mA
IF DC Forward Current 300 mA
if Recurrent Peak Forward Current 400 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second 1.0 A
Pulse width = 1.0 microsecond 4.0 A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 175 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

1N/FDLL 914/A/B / 4148 / 4448
PD Total Device Dissipation 500 mW
Derate above 25°C 3.33 mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

BV Breakdown Voltage I R = 100 µA 100 V
I R = 5.0 µA 75 V
IR Reverse Current VR = 20 V 25 nA
VR = 20 V, TA = 150°C 50 µA
VR = 75 V 5.0 µA
VF Forward Voltage 1N914B / 4448 I F = 5.0 mA 620 720 mV
1N916B I F = 5.0 mA 630 730 mV
1N914 / 916 / 4148 I F = 10 mA 1.0 V
1N914A / 916A I F = 20 mA 1.0 V
1N916B I F = 30 mA 1.0 V
1N914B / 4448 I F = 100 mA 1.0 V
CO Diode Capacitance
1N916/A/B / 4448 VR = 0, f = 1.0 MHz 2.0 pF
1N914/A/B / 4148 VR = 0, f = 1.0 MHz 4.0 pF
TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V (60 mA), 4.0 nS
I rr = 1.0 mA, RL = 100 Ω

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT REVERSE CURRENT vs REVERSE VOLTAGE

BV - 1.0 to 100 uA IR - 10 to 100 V
IR - REVERSE CURRENT (nA)

160 120
VVRR - REVERSE VOLTAGE (V)

Ta= 25°C Ta= 25°C

100
150
80
140
60

130 40

20
120
0
10 20 30 50 70 100
110 VR - REVERSE VOLTAGE (V)
1 2 3 5 10 20 30 50 100 GENERAL RULE: The Reverse Current of a diode will approximately
IR - REVERSE CURRENT (uA) double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs FORWARD CURRENT

VF - 1 to 100 uA VF - 0.1 to 100 mA
V F - FORWARD VOLTAGE (mV)

550 750
V F - FORWARD VOLTAGE (mV)

Ta= 25°C Ta= 25°C

500 700

450 650

400 600

350 550

300 500

250 450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
IF - FORWARD CURRENT (uA) I F - FORWARD CURRENT (mA)
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode
(continued)

Typical Characteristics (continued)

VF - 0.01 - 20 mA (-40 to +65 Deg C)

FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs
VF - 10 to 800 mA
AMBIENT TEMPERATURE
1.6 Ta= 25°C

F F - FORWARD VOLTAGE (mV)

V F - FORWARD VOLTAGE (V)

900
Typical
1.4 800
Ta= -40°C
700
1.2
600 Ta= +25°C
1
500
Ta= +65°C
0.8 400

300

VV
0.6
10 20 30 50 100 200 300 500 0.01 0.03 0.1 0.3 1 3 10
I F - FORWARD CURRENT (mA) I F - FORWARD CURRENT (mA)

CAPACITANCE vs REVERSE VOLTAGE REVERSE RECOVERY TIME vs

VR = 0.0 to 15 V REVERSE CURRENT
0.9 4
REVERSE RECOVERY (nS)

Ta= 25°C Ta= 25°C

3.5
CAPACITANCE (pF)

0.85 3

2.5

2
0.8
1.5

1
0.75 10 20 30 40 50 60
0 2 4 6 8 10 12 14 REVERSE CURRENT (mA)
REVERSE VOLTAGE (V) IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms

Average Rectified Current (Io) & POWER DERATING CURVE

Forward Current (I F) versus 500
DO-35
PDD - POWER DISSIPATION (mW)

Ambient Temperature (TA)

500 IR 400
-F
OR
WA
400 RD
I - CURRENT (mA)

CU 300
RR SOT-23
EN
300 T ST
EA
D 200
Io - A YS
200 VERA TA
GE R TE
ECTIF -m
IED C A
URR
ENT 100
100 - mA
P

0 0
0 50 100 150 0 50 100 150 200
o o
TA - AMBIENT TEMPERATURE ( C) IO - AVERAGE TEMPERATURE ( C)