‘TAG SEMICONDUCTORS LTD Part Number Definition Example T1010MH: T= Glass passivated Triac 10=10A 10 = IGT 25/25/25/25 mA M=600V H=T0-220 Technology Current Range TorCurentRange Voltag Packege scr O1=uptota “Sensitive Gate ScR'S v= 30 a= 1082 E Epitaxial (Fast) O2=upto2A sSzo0pA) Fe 60 B= AD26 F = Fast (gold doped, os=3A Sode_Min Mexia) A= 100 d= T0418 aless pessvated) Osman oo= 20 200 E = 10-2021 L = Light activated O5=5A 20 300 F =10-202-2 M= Mesa 06 = 6A 200 D= 400 G = 10-39 P = Planar 08=6A 200 M= 600 H=10-220 8 = Glass passivated 50 S= 700 J =10-220 isolated X = Top Glass 50 N= 800 K =AD101 Isolated ae ad ena Ne Seu 2a Thread T = Glass passivated eee 5 eee P = 10-881. Metric 1 Me Thresd piac 20 R= 0035 D = Glass passivated ive ScR's Te amected Min Max (ma) habe W= Wale Pack aaa X = Expanded Water 5 10 Y = Unscribed Water - 10 Z = Specials 1025 25 50 ~ 50 30 75 rmiacs mA max in Oued coe 1 2 3 4 a= 3 3 3 3 c= 5 5 6 5 10 10 10 10 25 25 25 25 50 50 50 50 50 50 50 75 Spocial Selections on SCR'S.and TRIACS. Codes 2010 99TAG SEMICONDUCTORS ETD TRIACS TGTIeWA) Maxionar Package TRURMS) VoRM aro ai.04 aig ais 1-03.98 Gipsy! VRaM 's ‘6 as 55 wo 98 8 200. TOS05eH _TO509BH Tosi08H _—_TosIZOH 400 T05050H -‘TOS09DH ——TOSIODH——Tost20# 200 TOSOSMH —TOSOGMH—TOSIOMH ——_TDSt2MH = 800 TOSOSNH —TOSOGNH ——TOSIONH—_—TOBI2NH ro220 & 200 TososaH vosoaBH Toston —_‘yooizeH #00 T08050H —‘TOSOEDH ——~TOS!0DH_——Too!z0H 600 Tos0sMH —TOSOGMH——“TOSIOMH ——_TOOT2MH 800 TOOOSNH —TOSOGNH—TOSIONH = TOBT2NK 200 Tos0seH To809BH ToBIoBH —_‘ToeTZ@H 400 ToR0soH -ToROaDH ——ToRtoDH = ToRT20H 600 TOBOSMH —ToBOEMH—“ToBIOMH ——_TOBT2MH 200 TOBOSNH —«TOROGNH = ToRIONH ——_Toat2NN 200 TiowsH —-TiowzBH ——Tio1aH 400 TiowoH == THoDH_THogOH 600 Tio1ovH = THOT Toran 200 THo1owH = THOTANH_THOKONH 2200 TiaiooH——sviaiaeH——TaWaaH 400 20H az0H—TRTO0H 00 TotomH TMH THaTaM 00 T2wNH —Tw22NM TRON is 200 TisiaBH —Tew9eH 400 mier20H —_Tiota0H 600 TieraMM—_TsTOMM 200 Tier2NH—_THOLONH % 200 Ta5%eH —‘T2610BH 400 Tasi20H —T2s120H 200 Tas2MK—T2510MH 800 T2W2NHT25raNH