International [teR| Rectifier PD-9.576B IRFPG40 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ere eee Vpss= 1000V Ros(on) = 3.52 Ip =4.3A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO:247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance betwoen pins to meet the requirements of most safety specifications. Absolute Maximum Ratings TO-247AC 1109 Parameter Units fo @ To=25°C | Continuous Drain Current, Ves @ 10 V [1p @ Te= 100°C | Continuous Drain Current, Vas @ 10V A lon Pulsed Drain Current © Po @ To = 25°C _| Power Dissipation Ww Linear Derating Factor Wee Ves v {Eas mJ la A Ean md dviat Peak Diode Recovery dvidt & Vins, ‘Operating Junction and “$5 t0 +180 Storage Temperature Range _ fH c Soldering Temperature, for 10 seconds 300 (1.6mm from case) [Mounting Torque, 6-32 or M3 sorow 40 Ibfin (1.1 Nem) J Thermal Resistance Parameter Min. Typ. [Units _| Rac dunetion-to-Case saat = = } Case-to-Sink, Flat, Greased Surface _} ecwIRFPG40 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions: } Vienoes | Drain-to-Souroe Breakdown Vollage [1000 — — | V_|Vasc0V, lo= 250A AVsenpse/AT,] Breakdown Voltage Temp. Coefficient | — | 1.3 | — | VAC | Reference to 25°C, lp= 1mA Poosicn Static Drain-to-Source On-Resistance_| — | — | 85 | 2 [Vos=10V, lo=26A © Vest Gate Threshold Voliage 20 | — | 40[v [ Forward Transconductance a | —|[—Ts loss Drain-to-Source Leakage Current == = WA ie Gale-10-Source Forward Leakage = [= oT Gate-1o-Source Reverse Leakage = [= 00 a Total Gate Charge = | = [i20 as Gate-to-Source Charge — = Fie | ne Qe Gate-to-Drain (‘Miler’) Charge — |= [es aon Turn-On Delay Time = [as [= Voo=500V | Tt Rise Time — | 33 3A ton Turn-Off Delay Time — [100 | Rowo.10 t Fall Time a) 200. See Figure 10 @ lo Internal Drain inductance —|s0] — eam een om - nH | from package & Ls Internal Source Inductance —- 1|- and center of Ce die contact i Cas Input Capacitance = [1800 | = Coss ‘Output Capacitance = [70 T= Crs Roverse Transfer Capacitance se | — fe1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units ‘Test Conditions ls Continuous Source Current eee HE MOSFET symbol (Body Diode) a Showing the (ed Jem Pulsed Source Current eee EEE (ECE integral reverse N14) (Body Diode) © | pen junction diode. ~~'s Vso) Diode Forward Voltage [=]= Tis 5°C, I5=4.9A, Ves-OV @ te Reverse Recovery Time — | 470 [710 °C, Ie=4.GA Qn Reverse Recovery Charge — [19] 29 00Aus @ ten Forward Tum-On Time Intrinsic turt-on time is neglegible (turn-on is dominated by Ls+L.o) Notes: © Repetitive rating; pulse wich limited by D Isp<4.3A, didt<100A/us, Voo<600, max. junction temperature (See Figure 11) Tys150°C ® Vop=50V, starting T)=25°C, L=50mH @ Pulse width < 900 ys; duty cycle <2%. Re=250, lns=4.9A (See Figure 12) 1110eR wf g = < € & 38 s 3s 6 6 04 rT 20us PULSE WIDTH To = 2% 10 so 108 Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C a = 3 3 & 2 ws PULSE WIDTH, APES HTB ee eee Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ip, Drain Current (Amps) Rosin» Drain-to-Source On Resistance (Normalized) ant IRFPG40 TH ous PULSE KroTH| Te ~ 150°C a rr ro Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150°C. 2.0 ip> 43h 28) os 0.9 “so =a 20020 40 60 A 100 420 440 160 Ty, Junction Temperature (°C) Fig 4, Normalized On-Resistance Vs. Temperature DATA AaIRFPG40 TOR 20) a Vag = Ov, t= iit paca S = = Cys t Ggg Cas SHORTED “6 Capacitance (pF) 8 Vag, Gate-to-Source Voltage (volts) 1 FOR TEST CORGUTT Lit SEE FIGURE 13 ww 0 Sr a a a ) Vps, Drain-to-Source Voltage (volts) Qgy, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage vot Ha QPERATION Ty Tris sREA TIMITED Z wi 2 8Y_Fos xy E = z g E 8 z 0 5 = 3 Eos & 5 & 3. 3 : 3 6 8 a "eeahe 2 180% a Yos = ov Sinoce use rn C OL oe ee ge ae Vso, Source-to-Drain Voltage (volts) Vos; Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 112TOR IREPG40 Vos —4—WReo— bus. Best best Yoo t 3 Puke With < 18 T Duty actors 0.1% <., * a 5 j Fig 10a. Switching Time Test Circuit oa | vi 5 t —] os § 90% 7 j Fin | 10% Pa “foo ves wi ee To, Case Temperature (°C) Son) ‘ont Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 3 i © E I z SINGLE PULSE ITF rn (rie Pesos TT ot LU pel COUTY FACTOR, Osts/e2 2. BEAK Ts=Pow X Zenje + Te Pr 10 10 108 o.4 7 10 ty, Rectangular Pulse Duration (seconds) Fig 11, Maximum Effective Transient Thermal Impedance, Junction-to-Case 411138IRFPG40 Varyiptoobtsin YS vealed Ins pur fe x + ne 1.38 Vop ae orton 9.38 2 800] las 3 0010 2 600] 4 a : 3 Fig 12a. Unclamped Inductive Test Circuit g 2 ° Vienjoss. 2 5 > 200 Yoo uo 0 = Wess : Starting Ty, Junction Temperature(*C) EEE Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Me, Drain Current Charge ——~ Fig 13a. Basic Gate Charge Waveform ie * ND Conert Samping Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit — See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1511 Appendix C: Part Marking Information — See page 1517 Intemational IQR Rectifier 1114