BO 136, BO 137, and BO 139 are epitaxial NPN silicon planar transistors in to 126 plastic package (12 a 3 DIN 41869, sheet 4) the transistors are designed for use in driver stages of high performance AF amplifiers.
BO 136, BO 137, and BO 139 are epitaxial NPN silicon planar transistors in to 126 plastic package (12 a 3 DIN 41869, sheet 4) the transistors are designed for use in driver stages of high performance AF amplifiers.
BO 136, BO 137, and BO 139 are epitaxial NPN silicon planar transistors in to 126 plastic package (12 a 3 DIN 41869, sheet 4) the transistors are designed for use in driver stages of high performance AF amplifiers.
2c > mm 8235605 0004332 4 maSIEG,- 733-07
NPN Silicon Transistors BD 135
STEMENS AKTIENGESELLSCHAF ———Bp a9
For AF driver and output stages of medium performance
BD 135, 8D 197, and 8D 199 are epitaxial NPN silicon planar
plastic package (12 A 3 DIN 41869, sheet 4). The collector is electrically connected to
‘the metalic mounting area, Togethor with 8D 136, BD 138, and BD 140 as complementary
pairs the transistors BD 138, BD 197, and BD 139 are designed for use in diver stages.
‘of high performance AF amplifiers.
Ordering code
Ordering code
80 135 (062702-D108 ‘Mica washer | 062902-862.
80 135.6 (082702-0108-V1 Spring washer | 062902-863
BD 135-10 (082702-0108-V2 ASDIN 137
8D 135-16 (082702-0108-V3
BD 135 paired (062702-D108-P sas
BD 137 (962702-D109 iB
80 137-6 (062702-0108-v1
80 137-10 (062702-0108-v2
BD 137 paired 082702-0108-P
80 139 082702-0110
BD 139-6 (082702-0110-V1
8D 139-10 (082702-0110-v2
8D 139 poied (062702-0110-P.
BD 135/80 138 compl. peir.| 082702-D139-S1 Aprox wight089 Dimensions inn
BD 137/8D 138 compl. pair.| 062702-D140-S1
BD 139/8D 140 compl pair.| 082702-0141-S1 Treva fuita with M 3 sco. Seng
Maximum ratings 5p 139
Collctor.emittrvotege
(Pee #1 KO) v
Collector-base voltage v
Colletoremittr votage 45 v
Emitr-baso voltage Vexo 5 v
Collector peak curent ton | 20 zo A
Collector current re ini
Base current mw |oz joz joz ja
Junction tomperature 3 | bts0 |} t80 | Se
Storage temperatur range ee ~85 to 125 “c
Total power dssipatontfas26°O Py | 126126 «128 |W
‘Thermal resistance
Junction to ambient ir Aon, [$110 | st | s10 | Kw
Sunetion 6 ease Boom fe sto Fst0 sto kw
3781755) Rg , -STENENS AKTIENGESELLSCHAF 14333" 0 BD 13
BD 137
BD 139
| aSC D MM 8235605 0004333 b MESIEG} T3397
Statlo charactorstios (Tan = 25°C)
“The transistors AD 135, BD 137, and BD 139 are grouped in accordance with the DG current
‘tin eg, and marked by numerals ofthe German DIN standard.
8 10 6
‘a0 198 ‘80 138 BD 135 8D 135
8D 137 8D 137 - 8D 137
BD 139 80 139 = BD 139
rs ee te hg Vee
(ma) ely IN ols w
5 325) 325) 325 =
150 63 (40t0 100) | 100(63%0 160) _| 160(100t0260) | -
500) 325 325 >25 12
Static characteristics Tan =
Ccollactor-emittr saturation
voltage le = 500 mA;
fp=soma) Veet
Coliotor cutoff current
ea 30¥) exo
Coitector cutoff current
ee =30V:Tony= 128°C) en0
Emitter outoH currant
eqs 8V) exo
Collctoraiterbreskdown
wotage ego = 60 m4) Vemeeo
condition for matching pare
Uig= 150 mA: Voe= 20) “eh
Dynamic characteristics Tans ~ 25°C)
Transition frequency {= 80 mA;
Vee =10V; = 100 Mia) | 380 >60 >50 Mz
1756 G-o1 5
|25 D mm S235L05 0004334 8 MESIEG | T~33-07
SIEMENS AKTIENGESELLSCHAF BD 135
BD 137
BD 139
Total pm. soe etn
FeSO Sean 80137, aD138 me er town, sow
%,
fan
»
s nt
WL
a
oo we as
eet cn
re CT rm
3.
=o ‘
% ls
hs wl
Hs 5
hes
0 ey
ee
300-1757 6-0225C D MM 8235605 0004335 T MESIEG! —72 93-07
25C04335 BD 135,
SIEMENS AKTIENGESELLSCHAF BD 137
BD 139
oeurent inte
TeeE i Bane
SS, worm
1758 6-03 : 2
1
j
i
I25¢ D Mm 8235605 OOO433b 1 MESIEG 733-07
eC 04536 0
6 O82. BD 138
SIENENS AKTIENGESELLSCHAF poles
- i
Supt chrtitn =)
2 sors 2017.
EF 2 —
W
k
14
rh
asl
seases
«al
|
aw
|
0 T ee
‘tga chracteritn = ‘eet rune =F)
i yoaneae sennen te now
4 nor, sors, sots8 wt 80138, 0137, 20138
a rT) a
—k
1759 goog