Springer Series in ADVANCED MICROELECTRONICS ‘The Springer Series in Advanced Microelectronics provides systematic information om al thetopice relevant forthe design processing, and manufacturing of microelectronic devices. “The books each prepared by leading researchers or engineers in their fields, cover the ba sicand advanced aspect of topics ich as wafer processing, material, device design device technologies, ctcut design, VST implementation, and subsystem technology, The sees formnsa bridge between physic and engineering and the volumes wll appeal to practicing engineers aswel as research scientists 1 Cllular Neural Networks ‘Chaos, Complexity and VISI Processing By G Manganaro,®. Arena, and L Fortuna 2 Technology of Integrated Circuits yD. Widmann, H.Mader,and H. Friedrich 3. Ferroelectric Memories By LE Scott, D.Widmann H.Mader — H. Friedrich Technology of Integrated Circuits ‘With 300 Figures 6 SpringerContents List of Symbols Key tothe different layers in integrated circuits 1 Introduction 2. Basic principles of integrated circuits technology ..... 3. Film technology Ex 32 33 34 35 36 Film production processes 31 The CVD process «1... 3.12 Thermal oxidation 3.13 Vapour phase deposition 3.44 Sputtering ..........+5 3.3. Spin coating 3.1.6 Film production by ion implantation .. 3.17 Film production using wafer-bonding and back-etching .......0+. fon 3.18 Annealing techniques .... ‘The monocrystalline silicon wafer 3.21 Geometry and crystallography of silicon wafers 322 Doping of silicon wafers . 3.2.3 Monocrystalline silicon growing techniques Epitaxial layers eee 3.3.1. Uses for epitaxial layers : 33.2 Diffusion of doping atoms from the substrate into the epitaxial ayer... ‘Thermal Si0, layers me 3.4.1 Uses of thermal SiO, layers 34.2 The LOCOS technique . ‘ 3.43 Properties of thin thermal SiO, films Deposited SiO, films. es 3.5.1 Creating deposited Si0, films 3.5.2 Applications of deposited Sid, films 353 Spacer technology 35.4 Trench isolation « 3.53 SiO, isolation films for multi-level metallization - Phosphorus glass films . . 36. Producing phosphorus glass films . XII XVIICoens Gomenss xt 362 Flow-glass.. « 436 Radiation damage in X-ray lithography Me 3463 Thermal phosphors glass -- a 41227 | Opportnites ory tography ccna MA 47. Silicon nitride films ..... a 44 Electron lithography ......-+- Bice MS 3.7.1. Producing silicon nitride films : 68 441 Electron resists... 5 372. Nitride lms as an oxidation barrier wsvscsscssses. 68 442 Resolution capably of lcm ography. Ms 3.7.3. Nitride films as a capacitor dielectric ......+++++++. 69 4.4.3. Electron beam pattern generators ...... 148 3.7.4 Using nitride films for passivation 70 444 Electron projection equipment 133, 48 Polysilcon fms 70 445 Alignment techniques in electron lithography 134 38.1 Producing polysilicon fms 1 446 Raiaton damageineletronithography« 134 382 Grain structure of polysilicon fms n 45 Ton lithography. : eae 156 383 Conductivity of polysilicon films ..-... n 451 Tonresiste | 156 384 Usesof polysilicon films. % 452. Ton beam writing : 158 39° Silcde fils... CII 8 5 Ion beam projection ....-. 160 391 Producing silicide Films ...-.....ssseee 79 454 Resolution capability of ion lithography 182 39.2 Polycide films : a 446. Pattern generation without using lithography 166 39.3. Sliation of sourceldraia regions .. 8 310 Refractory metal lms 8 Etching technology 169 3.11 Auminiun fms ae 85 5.1 Wet etching 170 lll Producing aluminium films .....--. a5 Sal Wet chemical etching 170 3112 Crystal structure of aluminium ims 86 512 Chemica mechanic ching m 3.113 Electromigration in aluminium interconnections a7 52. Dry etching nnn 1% B14. Aluminiumesilicon contacts .....--. 88 521 Physical dry etching «0. 0-....--- 174 3.115 Aluminium-aluminium contacts °0 5.22 Chemical dryetching «1. ss... cscssssesoee 176 3:12 Organic films « a 523. Physicachemical dry etching 178 3:21 Spincon glass films a 5.24 Chemical etching reactions 186 juzaPolyimidefilms «... 92 5.25 Etching gases ......--..- 188 5.26 Process optimization 188, Lithogeaphy 95 5.27 Endpoint detection ... an 193 4.1 Linewidth dimension, placement errors and defects 96 5.3 Dryetch processes Bo 196 4.2. Photoithogeaphy 98 531 Dry etching of silicon nitride 17 42.1 Photoresst lms 98 532 Dryetching of polysilicon «.......- 17 422 Formation of photoresist patterns : 102 533. Dry etching of monocrystalline silicon ..- 199 423 Light intensity variation in the photoresist 105 5.34 Dry etching of metal silcides and refractory metals .. 200, 424 Special photoresist techniques : 110 535 Dryetching of silicon dioxide .....--...-seev-se-s 20 4.23. Optical exposure techniques ns 536 Dry etching of aluminium ....-.. 203 42 Resolution capability of optical exposure techniques . 119 537 Dryetching of polymers.....-. 205 427 Alignment accuracy of optical exposure equipment .. 130 4.28 Defects occurring in optical lithography...» 133 Doping technstogy 207 43° XCraylithography 134 ‘Thermal doping sss. 208 434 Weteleng gion ry ogaphy 1s £2 Doping on pasion 209 432 Xrayresists 136 621 Ton implantation machines =... 209 433, Xray sources 7 622 Implanted doping profiles ..-.. a aba Xray masks 2 {63 Activation and diffusion of dopant atoms -. 219 4s 63.1 Activating implanted dopant atoms 219 435 Alignment procedure for X-ray lithography «