KOH Etching

Heated Potassium Hydroxide (KOH) solutions can be used for preferential crystallographic etching of Silicon (Si). The etch rate depends on the doping and crystallographic orientation of the Si and the type (concentration) of KOH used. Normal rates are about 1 micron (um)/minute. Because the Potassium ion (K+) is an extremely fast diffusing metal alkali metal ion; therefore, it is extremely important that you do not contaminate with metal ion sensitive processes or structures (tweezers, etc.) in the lab.

KOH Process:

KOH etching is done in a constant temperature bath using clean quartz glassware. 1. Constant Temperature Bath Fill the bath with water, leaving an inch or so at the top of the large beaker so when the solution beaker is placed in it does not overflow. 2. Use Appropriate Labware Place the large glass beaker with the water onto the surface of the hotplate at the preset temperature. Select a smaller quartz or pyrex beaker in which you will place the KOH solution; place a watch glass on top of the solution beaker to collect condensate and prevent spillage of the KOH solution onto the hot plate surface. 3. Mix the KOH solution and place the beaker into the bath Pour the desired volume of KOH into the smaller beaker; concentrations of KOH are selected by the student. Dilute the KOH crystals using water and mix the desired concentration; normal concentrations used in the lab are 30%. This concentration will etch at approximately 60Angstroms/hr. 4. Etch your substrates or wafers 5. Finish your process and clean up